JPH0355401B2 - - Google Patents
Info
- Publication number
- JPH0355401B2 JPH0355401B2 JP55138453A JP13845380A JPH0355401B2 JP H0355401 B2 JPH0355401 B2 JP H0355401B2 JP 55138453 A JP55138453 A JP 55138453A JP 13845380 A JP13845380 A JP 13845380A JP H0355401 B2 JPH0355401 B2 JP H0355401B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- gas
- hydrogen
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 100
- 150000004767 nitrides Chemical class 0.000 claims description 34
- 239000001257 hydrogen Substances 0.000 claims description 32
- 229910052739 hydrogen Inorganic materials 0.000 claims description 32
- 238000004140 cleaning Methods 0.000 claims description 30
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 29
- 239000007789 gas Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 230000006698 induction Effects 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 2
- 150000002829 nitrogen Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 description 77
- 230000000694 effects Effects 0.000 description 30
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- 230000004913 activation Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910021529 ammonia Inorganic materials 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000005121 nitriding Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003472 neutralizing effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- FFBGYFUYJVKRNV-UHFFFAOYSA-N boranylidynephosphane Chemical compound P#B FFBGYFUYJVKRNV-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- SYHGEUNFJIGTRX-UHFFFAOYSA-N methylenedioxypyrovalerone Chemical compound C=1C=C2OCOC2=CC=1C(=O)C(CCC)N1CCCC1 SYHGEUNFJIGTRX-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- MNTPMEHIQKUBIC-UHFFFAOYSA-N silicon;hydrofluoride Chemical compound F.[Si] MNTPMEHIQKUBIC-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13845380A JPS5767009A (en) | 1980-10-02 | 1980-10-02 | Formation of film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13845380A JPS5767009A (en) | 1980-10-02 | 1980-10-02 | Formation of film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5767009A JPS5767009A (en) | 1982-04-23 |
| JPH0355401B2 true JPH0355401B2 (zh) | 1991-08-23 |
Family
ID=15222359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13845380A Granted JPS5767009A (en) | 1980-10-02 | 1980-10-02 | Formation of film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5767009A (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5934639A (ja) * | 1982-08-21 | 1984-02-25 | Mitsubishi Electric Corp | 窒化シリコン膜形成装置 |
| JPS5986228A (ja) * | 1982-11-10 | 1984-05-18 | Toshiba Corp | 窒化膜生成方法 |
| JPS59169143A (ja) * | 1983-03-16 | 1984-09-25 | Toshiba Corp | 窒化膜生成装置 |
| WO1987000346A1 (en) * | 1985-07-02 | 1987-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming a thin film |
| US8110489B2 (en) * | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
| JP4001498B2 (ja) * | 2002-03-29 | 2007-10-31 | 東京エレクトロン株式会社 | 絶縁膜の形成方法及び絶縁膜の形成システム |
| JP4361078B2 (ja) * | 2006-11-20 | 2009-11-11 | 東京エレクトロン株式会社 | 絶縁膜の形成方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5358490A (en) * | 1976-11-05 | 1978-05-26 | Mitsubishi Electric Corp | Forming method for film |
| JPS5423379A (en) * | 1977-07-22 | 1979-02-21 | Fujitsu Ltd | Formation of insulating film on semiconductor surface |
| JPS55120143A (en) * | 1979-03-09 | 1980-09-16 | Fujitsu Ltd | Method of forming semiconductor surface insulating film |
-
1980
- 1980-10-02 JP JP13845380A patent/JPS5767009A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5358490A (en) * | 1976-11-05 | 1978-05-26 | Mitsubishi Electric Corp | Forming method for film |
| JPS5423379A (en) * | 1977-07-22 | 1979-02-21 | Fujitsu Ltd | Formation of insulating film on semiconductor surface |
| JPS55120143A (en) * | 1979-03-09 | 1980-09-16 | Fujitsu Ltd | Method of forming semiconductor surface insulating film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5767009A (en) | 1982-04-23 |
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