JPH0353391B2 - - Google Patents

Info

Publication number
JPH0353391B2
JPH0353391B2 JP59067516A JP6751684A JPH0353391B2 JP H0353391 B2 JPH0353391 B2 JP H0353391B2 JP 59067516 A JP59067516 A JP 59067516A JP 6751684 A JP6751684 A JP 6751684A JP H0353391 B2 JPH0353391 B2 JP H0353391B2
Authority
JP
Japan
Prior art keywords
transmission window
reaction vessel
substrate
shutter
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59067516A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60212223A (ja
Inventor
Shinji Sugioka
Shinji Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Priority to JP6751684A priority Critical patent/JPS60212223A/ja
Publication of JPS60212223A publication Critical patent/JPS60212223A/ja
Publication of JPH0353391B2 publication Critical patent/JPH0353391B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
JP6751684A 1984-04-06 1984-04-06 光化学反応装置 Granted JPS60212223A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6751684A JPS60212223A (ja) 1984-04-06 1984-04-06 光化学反応装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6751684A JPS60212223A (ja) 1984-04-06 1984-04-06 光化学反応装置

Publications (2)

Publication Number Publication Date
JPS60212223A JPS60212223A (ja) 1985-10-24
JPH0353391B2 true JPH0353391B2 (enrdf_load_stackoverflow) 1991-08-14

Family

ID=13347224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6751684A Granted JPS60212223A (ja) 1984-04-06 1984-04-06 光化学反応装置

Country Status (1)

Country Link
JP (1) JPS60212223A (enrdf_load_stackoverflow)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5644763A (en) * 1979-09-20 1981-04-24 Toshiba Corp Cvd device under reduced pressure
JPS56120064A (en) * 1980-02-26 1981-09-21 Hitachi Ltd Method for operation of scanning electron microscope and the likes

Also Published As

Publication number Publication date
JPS60212223A (ja) 1985-10-24

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