JPH0352210B2 - - Google Patents

Info

Publication number
JPH0352210B2
JPH0352210B2 JP58014086A JP1408683A JPH0352210B2 JP H0352210 B2 JPH0352210 B2 JP H0352210B2 JP 58014086 A JP58014086 A JP 58014086A JP 1408683 A JP1408683 A JP 1408683A JP H0352210 B2 JPH0352210 B2 JP H0352210B2
Authority
JP
Japan
Prior art keywords
electron beam
processed
pattern
mask blank
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58014086A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59150422A (ja
Inventor
Kenji Sugishima
Kenji Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58014086A priority Critical patent/JPS59150422A/ja
Priority to EP84300569A priority patent/EP0115952B1/en
Priority to DE8484300569T priority patent/DE3462955D1/de
Publication of JPS59150422A publication Critical patent/JPS59150422A/ja
Priority to US06/883,425 priority patent/US4678919A/en
Publication of JPH0352210B2 publication Critical patent/JPH0352210B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
JP58014086A 1983-01-31 1983-01-31 露光処理方法 Granted JPS59150422A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58014086A JPS59150422A (ja) 1983-01-31 1983-01-31 露光処理方法
EP84300569A EP0115952B1 (en) 1983-01-31 1984-01-30 Electron beam exposure method and apparatus
DE8484300569T DE3462955D1 (en) 1983-01-31 1984-01-30 Electron beam exposure method and apparatus
US06/883,425 US4678919A (en) 1983-01-31 1986-07-14 Electron beam exposure method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58014086A JPS59150422A (ja) 1983-01-31 1983-01-31 露光処理方法

Publications (2)

Publication Number Publication Date
JPS59150422A JPS59150422A (ja) 1984-08-28
JPH0352210B2 true JPH0352210B2 (enExample) 1991-08-09

Family

ID=11851290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58014086A Granted JPS59150422A (ja) 1983-01-31 1983-01-31 露光処理方法

Country Status (4)

Country Link
US (1) US4678919A (enExample)
EP (1) EP0115952B1 (enExample)
JP (1) JPS59150422A (enExample)
DE (1) DE3462955D1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61177718A (ja) * 1985-02-04 1986-08-09 Hitachi Ltd 電子線描画装置
US4846552A (en) * 1986-04-16 1989-07-11 The United States Of America As Represented By The Secretary Of The Air Force Method of fabricating high efficiency binary planar optical elements
JP2540168B2 (ja) * 1987-09-25 1996-10-02 三菱電機株式会社 ビ―ム偏向位置補正装置
JPH0779075B2 (ja) * 1990-02-21 1995-08-23 株式会社東芝 電子ビーム露光装置
US5329130A (en) * 1991-08-06 1994-07-12 Fujitsu Limited Charged particle beam exposure method and apparatus
US5646403A (en) * 1994-10-28 1997-07-08 Nikon Corporation Scanning electron microscope
US5773836A (en) * 1996-10-28 1998-06-30 International Business Machines Corporation Method for correcting placement errors in a lithography system
KR100334636B1 (ko) * 1998-07-16 2002-04-27 히로시 오우라 노출된 시료의 표면 상에 부분적인 불균일이 있는 경우에도 고도로 정밀한 노출을 할 수 있는 대전 입자빔 노출 장치 및 노출 방법
JP2000091225A (ja) 1998-07-16 2000-03-31 Advantest Corp 荷電粒子ビ―ム露光装置及び露光方法
WO2000060415A1 (de) * 1999-04-01 2000-10-12 Sigma-C Gmbh Verfahren zur korrektur von abbildungsfehlern
JP2004361507A (ja) * 2003-06-02 2004-12-24 Renesas Technology Corp フォトマスクの製造方法およびフォトマスク描画システム
JP5087258B2 (ja) * 2005-11-04 2012-12-05 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法、荷電粒子ビーム描画装置、位置ずれ量計測方法及び位置計測装置
JP4891804B2 (ja) * 2007-02-21 2012-03-07 日本電子株式会社 パターン描画方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5398781A (en) * 1976-11-25 1978-08-29 Jeol Ltd Electron ray exposure unit
US4137459A (en) * 1978-02-13 1979-01-30 International Business Machines Corporation Method and apparatus for applying focus correction in E-beam system
JPS55102228A (en) * 1979-01-29 1980-08-05 Nippon Telegr & Teleph Corp <Ntt> Electron beam exposure device
NL7904580A (nl) * 1979-06-12 1980-12-16 Philips Nv Inrichting voor het schrijven van patronen in een laag op een substraat met een bundel elektrisch geladen deeltjes.
JPS5536990A (en) * 1979-07-16 1980-03-14 Toshiba Corp Apparatus for applying electron beam
JPS5621321A (en) * 1979-07-27 1981-02-27 Fujitsu Ltd Automatically setting method of focus and exposure coefficient of electron beam exposure apparatus
JPS5693318A (en) * 1979-12-10 1981-07-28 Fujitsu Ltd Electron beam exposure device
JPS56124234A (en) * 1980-03-05 1981-09-29 Hitachi Ltd Correcting method for electron beam deflection
JPS5787131A (en) * 1980-11-20 1982-05-31 Jeol Ltd Exposing method of electron beam

Also Published As

Publication number Publication date
US4678919A (en) 1987-07-07
JPS59150422A (ja) 1984-08-28
EP0115952A1 (en) 1984-08-15
EP0115952B1 (en) 1987-04-01
DE3462955D1 (en) 1987-05-07

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