AU3815200A - Method for correcting image faults - Google Patents
Method for correcting image faultsInfo
- Publication number
- AU3815200A AU3815200A AU38152/00A AU3815200A AU3815200A AU 3815200 A AU3815200 A AU 3815200A AU 38152/00 A AU38152/00 A AU 38152/00A AU 3815200 A AU3815200 A AU 3815200A AU 3815200 A AU3815200 A AU 3815200A
- Authority
- AU
- Australia
- Prior art keywords
- correcting image
- image faults
- faults
- correcting
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
- H01J37/3026—Patterning strategy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31769—Proximity effect correction
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19915068 | 1999-04-01 | ||
DE19915068 | 1999-04-01 | ||
PCT/EP2000/002731 WO2000060415A1 (en) | 1999-04-01 | 2000-03-28 | Method for correcting image faults |
Publications (1)
Publication Number | Publication Date |
---|---|
AU3815200A true AU3815200A (en) | 2000-10-23 |
Family
ID=7903379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU38152/00A Abandoned AU3815200A (en) | 1999-04-01 | 2000-03-28 | Method for correcting image faults |
Country Status (2)
Country | Link |
---|---|
AU (1) | AU3815200A (en) |
WO (1) | WO2000060415A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10121178B4 (en) * | 2001-04-30 | 2005-12-01 | Infineon Technologies Ag | Experimental procedure for the verification of aberrations in photomasks |
DE102005009536A1 (en) | 2005-02-25 | 2006-08-31 | Carl Zeiss Sms Gmbh | Process to inspect masks for weak spots uses aerial image simulation to produce a list of critical points or hotspots, which is analyzed using Aerial Imaging Measurement system to compare real with simulated images |
DE102007000981B4 (en) | 2007-02-22 | 2020-07-30 | Vistec Semiconductor Systems Gmbh | Device and method for measuring structures on a mask and for calculating the structures resulting from the structures in a photoresist |
DE102007047924B4 (en) | 2007-02-23 | 2013-03-21 | Vistec Semiconductor Systems Jena Gmbh | Method for the automatic detection of incorrect measurements by means of quality factors |
DE102017203879B4 (en) | 2017-03-09 | 2023-06-07 | Carl Zeiss Smt Gmbh | Method for analyzing a defect site of a photolithographic mask |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59150422A (en) * | 1983-01-31 | 1984-08-28 | Fujitsu Ltd | Exposure process |
JPS63129621A (en) * | 1986-11-20 | 1988-06-02 | Fujitsu Ltd | X-ray lithography method |
JP2540168B2 (en) * | 1987-09-25 | 1996-10-02 | 三菱電機株式会社 | Beam deflection position correction device |
JP2906658B2 (en) * | 1990-11-30 | 1999-06-21 | 松下電器産業株式会社 | Pattern formation method |
IL97022A0 (en) * | 1991-01-24 | 1992-03-29 | Ibm Israel | Partitioning method for e-beam lithography |
US5656399A (en) * | 1996-01-22 | 1997-08-12 | Lucent Technologies Inc. | Process for making an x-ray mask |
US5847959A (en) * | 1997-01-28 | 1998-12-08 | Etec Systems, Inc. | Method and apparatus for run-time correction of proximity effects in pattern generation |
-
2000
- 2000-03-28 WO PCT/EP2000/002731 patent/WO2000060415A1/en active Application Filing
- 2000-03-28 AU AU38152/00A patent/AU3815200A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2000060415A1 (en) | 2000-10-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |