AU3815200A - Method for correcting image faults - Google Patents

Method for correcting image faults

Info

Publication number
AU3815200A
AU3815200A AU38152/00A AU3815200A AU3815200A AU 3815200 A AU3815200 A AU 3815200A AU 38152/00 A AU38152/00 A AU 38152/00A AU 3815200 A AU3815200 A AU 3815200A AU 3815200 A AU3815200 A AU 3815200A
Authority
AU
Australia
Prior art keywords
correcting image
image faults
faults
correcting
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU38152/00A
Inventor
Christian K. Kalus
Wolfram Ziegler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SIGMA-C GmbH
Original Assignee
SIGMA C GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SIGMA C GmbH filed Critical SIGMA C GmbH
Publication of AU3815200A publication Critical patent/AU3815200A/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AU38152/00A 1999-04-01 2000-03-28 Method for correcting image faults Abandoned AU3815200A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19915068 1999-04-01
DE19915068 1999-04-01
PCT/EP2000/002731 WO2000060415A1 (en) 1999-04-01 2000-03-28 Method for correcting image faults

Publications (1)

Publication Number Publication Date
AU3815200A true AU3815200A (en) 2000-10-23

Family

ID=7903379

Family Applications (1)

Application Number Title Priority Date Filing Date
AU38152/00A Abandoned AU3815200A (en) 1999-04-01 2000-03-28 Method for correcting image faults

Country Status (2)

Country Link
AU (1) AU3815200A (en)
WO (1) WO2000060415A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10121178B4 (en) * 2001-04-30 2005-12-01 Infineon Technologies Ag Experimental procedure for the verification of aberrations in photomasks
DE102005009536A1 (en) 2005-02-25 2006-08-31 Carl Zeiss Sms Gmbh Process to inspect masks for weak spots uses aerial image simulation to produce a list of critical points or hotspots, which is analyzed using Aerial Imaging Measurement system to compare real with simulated images
DE102007000981B4 (en) 2007-02-22 2020-07-30 Vistec Semiconductor Systems Gmbh Device and method for measuring structures on a mask and for calculating the structures resulting from the structures in a photoresist
DE102007047924B4 (en) 2007-02-23 2013-03-21 Vistec Semiconductor Systems Jena Gmbh Method for the automatic detection of incorrect measurements by means of quality factors
DE102017203879B4 (en) 2017-03-09 2023-06-07 Carl Zeiss Smt Gmbh Method for analyzing a defect site of a photolithographic mask

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59150422A (en) * 1983-01-31 1984-08-28 Fujitsu Ltd Exposure process
JPS63129621A (en) * 1986-11-20 1988-06-02 Fujitsu Ltd X-ray lithography method
JP2540168B2 (en) * 1987-09-25 1996-10-02 三菱電機株式会社 Beam deflection position correction device
JP2906658B2 (en) * 1990-11-30 1999-06-21 松下電器産業株式会社 Pattern formation method
IL97022A0 (en) * 1991-01-24 1992-03-29 Ibm Israel Partitioning method for e-beam lithography
US5656399A (en) * 1996-01-22 1997-08-12 Lucent Technologies Inc. Process for making an x-ray mask
US5847959A (en) * 1997-01-28 1998-12-08 Etec Systems, Inc. Method and apparatus for run-time correction of proximity effects in pattern generation

Also Published As

Publication number Publication date
WO2000060415A1 (en) 2000-10-12

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase