JPH0351678B2 - - Google Patents

Info

Publication number
JPH0351678B2
JPH0351678B2 JP61301970A JP30197086A JPH0351678B2 JP H0351678 B2 JPH0351678 B2 JP H0351678B2 JP 61301970 A JP61301970 A JP 61301970A JP 30197086 A JP30197086 A JP 30197086A JP H0351678 B2 JPH0351678 B2 JP H0351678B2
Authority
JP
Japan
Prior art keywords
silicon carbide
carbide whiskers
reaction
carbon black
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61301970A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63156100A (ja
Inventor
Tetsuo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanebo Ltd
Kobe Steel Ltd
Original Assignee
Kanebo Ltd
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanebo Ltd, Kobe Steel Ltd filed Critical Kanebo Ltd
Priority to JP61301970A priority Critical patent/JPS63156100A/ja
Priority to US07/096,743 priority patent/US4873070A/en
Priority to EP87308276A priority patent/EP0272773B1/en
Priority to DE8787308276T priority patent/DE3777577D1/de
Publication of JPS63156100A publication Critical patent/JPS63156100A/ja
Publication of JPH0351678B2 publication Critical patent/JPH0351678B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Catalysts (AREA)
JP61301970A 1986-12-17 1986-12-17 炭化ケイ素ウイスカ−の製造方法 Granted JPS63156100A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP61301970A JPS63156100A (ja) 1986-12-17 1986-12-17 炭化ケイ素ウイスカ−の製造方法
US07/096,743 US4873070A (en) 1986-12-17 1987-09-15 Process for producing silicon carbide whiskers
EP87308276A EP0272773B1 (en) 1986-12-17 1987-09-18 Process for production silicon carbide whiskers
DE8787308276T DE3777577D1 (de) 1986-12-17 1987-09-18 Verfahren zur herstellung von siliziumcarbid-whiskern.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61301970A JPS63156100A (ja) 1986-12-17 1986-12-17 炭化ケイ素ウイスカ−の製造方法

Publications (2)

Publication Number Publication Date
JPS63156100A JPS63156100A (ja) 1988-06-29
JPH0351678B2 true JPH0351678B2 (enrdf_load_stackoverflow) 1991-08-07

Family

ID=17903321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61301970A Granted JPS63156100A (ja) 1986-12-17 1986-12-17 炭化ケイ素ウイスカ−の製造方法

Country Status (1)

Country Link
JP (1) JPS63156100A (enrdf_load_stackoverflow)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945637B2 (ja) * 1981-09-21 1984-11-07 工業技術院長 炭化珪素ウイスカ−の製造方法
JPS58120599A (ja) * 1982-01-12 1983-07-18 Onoda Cement Co Ltd β−炭化珪素ウイスカ−の製造方法
JPS61127700A (ja) * 1984-11-21 1986-06-14 Tokai Carbon Co Ltd ＳｉＣウイスカ−の製造方法

Also Published As

Publication number Publication date
JPS63156100A (ja) 1988-06-29

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