DE3777577D1 - Verfahren zur herstellung von siliziumcarbid-whiskern. - Google Patents

Verfahren zur herstellung von siliziumcarbid-whiskern.

Info

Publication number
DE3777577D1
DE3777577D1 DE8787308276T DE3777577T DE3777577D1 DE 3777577 D1 DE3777577 D1 DE 3777577D1 DE 8787308276 T DE8787308276 T DE 8787308276T DE 3777577 T DE3777577 T DE 3777577T DE 3777577 D1 DE3777577 D1 DE 3777577D1
Authority
DE
Germany
Prior art keywords
silicon carbide
producing silicon
carbide whiskers
whiskers
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787308276T
Other languages
English (en)
Inventor
Kichiro Kaji
Katsunori Shimashaki
Masakazu Yamamoto
Kozo Saiki
Keita Yura
Tetsuo Suzuki
Hidetsugu Habata
Isao Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanebo Ltd
Kobe Steel Ltd
Original Assignee
Kanebo Ltd
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61301970A external-priority patent/JPS63156100A/ja
Priority claimed from JP61305122A external-priority patent/JPS63159298A/ja
Priority claimed from JP61305123A external-priority patent/JPS63159299A/ja
Application filed by Kanebo Ltd, Kobe Steel Ltd filed Critical Kanebo Ltd
Application granted granted Critical
Publication of DE3777577D1 publication Critical patent/DE3777577D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8787308276T 1986-12-17 1987-09-18 Verfahren zur herstellung von siliziumcarbid-whiskern. Expired - Fee Related DE3777577D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61301970A JPS63156100A (ja) 1986-12-17 1986-12-17 炭化ケイ素ウイスカ−の製造方法
JP61305122A JPS63159298A (ja) 1986-12-20 1986-12-20 炭化ケイ素ウイスカーの連続製造装置
JP61305123A JPS63159299A (ja) 1986-12-20 1986-12-20 炭化ケイ素ウイスカ−の製造方法

Publications (1)

Publication Number Publication Date
DE3777577D1 true DE3777577D1 (de) 1992-04-23

Family

ID=27338502

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787308276T Expired - Fee Related DE3777577D1 (de) 1986-12-17 1987-09-18 Verfahren zur herstellung von siliziumcarbid-whiskern.

Country Status (3)

Country Link
US (1) US4873070A (de)
EP (1) EP0272773B1 (de)
DE (1) DE3777577D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02137799A (ja) * 1988-11-18 1990-05-28 Shin Etsu Chem Co Ltd 炭化珪素ウィスカーの製造方法
FR2649421A1 (fr) * 1989-07-06 1991-01-11 Atochem Fibres monocristallines de carbure de silicium et leur procede de fabrication
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
US5599732A (en) * 1995-08-21 1997-02-04 Northwestern University Method for growing III-V semiconductor films using a coated reaction chamber
AU2153800A (en) 1998-11-20 2000-06-13 Clemson University Process for recycling spent pot liner
US6221154B1 (en) * 1999-02-18 2001-04-24 City University Of Hong Kong Method for growing beta-silicon carbide nanorods, and preparation of patterned field-emitters by chemical vapor depositon (CVD)
CN1164488C (zh) * 2001-07-25 2004-09-01 中山大学 一种纳米碳化硅材料的制备方法
KR101897020B1 (ko) * 2011-12-26 2018-09-12 엘지이노텍 주식회사 탄화규소 분말, 이의 제조 방법, 탄화규소 소결체 및 이의 제조 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3622272A (en) * 1968-04-01 1971-11-23 Gen Technologies Corp Method of growing silicon carbide whiskers
US3840647A (en) * 1969-01-24 1974-10-08 Suwa Seikosha Kk Method for producing whiskers
JPS5025907B1 (de) * 1970-10-29 1975-08-27
JPS5213604B2 (de) * 1973-06-20 1977-04-15
JPS529207A (en) * 1975-07-12 1977-01-24 Katsusaburo Ishii Single joint device of a rail
JPS56100125A (en) * 1980-01-14 1981-08-11 Sumitomo Electric Ind Ltd Manufacture of silicon carbide whisker
JPS599520B2 (ja) * 1981-09-14 1984-03-02 東海カ−ボン株式会社 ｓｉｃホイスカ−の製造方法
JPS58120599A (ja) * 1982-01-12 1983-07-18 Onoda Cement Co Ltd β−炭化珪素ウイスカ−の製造方法
JPS60260499A (ja) * 1984-06-07 1985-12-23 Idemitsu Kosan Co Ltd 炭化ケイ素ウイスカ−の製造方法

Also Published As

Publication number Publication date
EP0272773B1 (de) 1992-03-18
US4873070A (en) 1989-10-10
EP0272773A3 (en) 1989-04-26
EP0272773A2 (de) 1988-06-29

Similar Documents

Publication Publication Date Title
DE3764880D1 (de) Verfahren zur herstellung von siloxanharzen.
DE3767431D1 (de) Verfahren zur herstellung von halbleiterbauelementen.
DE3782724D1 (de) Verfahren zur herstellung von vliesstoffen.
DE3762745D1 (de) Verfahren zur herstellung von 2-chlor-5-chlormethylthiazol.
DE3777116D1 (de) Verfahren zur herstellung von aluminiumnitrid.
DE3763558D1 (de) Verfahren zur herstellung von 2-chlor-5-chlormethylpyridin.
DE3784151D1 (de) Verfahren zur herstellung von alkylhalosilanen.
DE3773889D1 (de) Verfahren zur herstellung von merkaptomethylphenolen.
DE3764421D1 (de) Verfahren zur herstellung von tertiaeren olefinen.
DE3780704D1 (de) Verfahren zur herstellung von n-acyltetrahydroisochinoline.
DE3772270D1 (de) Verfahren zur herstellung von keramikwerkstoffen auf der basis von nitrid.
DE3765959D1 (de) Verfahren zur herstellung von alpha-sialon-pulver.
DE3777577D1 (de) Verfahren zur herstellung von siliziumcarbid-whiskern.
DE3778591D1 (de) Verfahren zur herstellung von polycarbonaten.
DE3769076D1 (de) Verfahren zur herstellung von fluorbenzaldehyden.
DE3766910D1 (de) Verfahren zur herstellung von dihydrocyclocitral.
DE3761539D1 (de) Verfahren zur herstellung von verbundteilen.
DE3762730D1 (de) Verfahren zur herstellung von kohlenstoffarmen silicium.
DE3776980D1 (de) Verfahren zur herstellung von feinstrukturen.
DE3777475D1 (de) Verfahren zur herstellung von polyphenylen-ether-polyester-copolymeren.
DE3769263D1 (de) Verfahren zur herstellung von bromfluoroethylhypofluorit.
ATA304487A (de) Verfahren zur herstellung von 9alpha-hydroxy-4-androsten-3,17-dion
DE3776494D1 (de) Verfahren zur herstellung von 4,4'-dihydroxybiphenyl.
DE3767948D1 (de) Verfahren zur herstellung von tertiaeren alkylphosphanen.
DE3770059D1 (de) Verfahren zur herstellung von 4,4'-bis-phenol.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee