JPH0353279B2 - - Google Patents

Info

Publication number
JPH0353279B2
JPH0353279B2 JP60136578A JP13657885A JPH0353279B2 JP H0353279 B2 JPH0353279 B2 JP H0353279B2 JP 60136578 A JP60136578 A JP 60136578A JP 13657885 A JP13657885 A JP 13657885A JP H0353279 B2 JPH0353279 B2 JP H0353279B2
Authority
JP
Japan
Prior art keywords
silicon carbide
carbide whiskers
reaction
raw material
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60136578A
Other languages
English (en)
Japanese (ja)
Other versions
JPS623098A (ja
Inventor
Yoshiro Kaji
Masakazu Yamamoto
Katsunori Shimazaki
Keita Yura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanebo Ltd
Kobe Steel Ltd
Original Assignee
Kanebo Ltd
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanebo Ltd, Kobe Steel Ltd filed Critical Kanebo Ltd
Priority to JP60136578A priority Critical patent/JPS623098A/ja
Publication of JPS623098A publication Critical patent/JPS623098A/ja
Publication of JPH0353279B2 publication Critical patent/JPH0353279B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Catalysts (AREA)
JP60136578A 1985-06-21 1985-06-21 炭化ケイ素ウイスカ−の製造方法 Granted JPS623098A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60136578A JPS623098A (ja) 1985-06-21 1985-06-21 炭化ケイ素ウイスカ−の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60136578A JPS623098A (ja) 1985-06-21 1985-06-21 炭化ケイ素ウイスカ−の製造方法

Publications (2)

Publication Number Publication Date
JPS623098A JPS623098A (ja) 1987-01-09
JPH0353279B2 true JPH0353279B2 (enrdf_load_stackoverflow) 1991-08-14

Family

ID=15178550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60136578A Granted JPS623098A (ja) 1985-06-21 1985-06-21 炭化ケイ素ウイスカ−の製造方法

Country Status (1)

Country Link
JP (1) JPS623098A (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2611694B1 (fr) * 1987-02-23 1989-05-19 Pechiney Electrometallurgie Procede de preparation de trichites en carbure de silicium
US4911781A (en) * 1987-05-05 1990-03-27 The Standard Oil Company VLS Fiber growth process
JPS63195549U (enrdf_load_stackoverflow) * 1987-05-30 1988-12-15
JPH02217400A (ja) * 1989-02-16 1990-08-30 Ofic Co 炭化ケイ素ウイスカーの製造方法
US4971834A (en) * 1989-06-29 1990-11-20 Therm Incorporated Process for preparing precursor for silicon carbide whiskers
US5364660A (en) * 1989-07-21 1994-11-15 Minnesota Mining And Manufacturing Company Continuous atmospheric pressure CVD coating of fibers
US5322711A (en) * 1989-07-21 1994-06-21 Minnesota Mining And Manufacturing Company Continuous method of covering inorganic fibrous material with particulates
US5405654A (en) * 1989-07-21 1995-04-11 Minnesota Mining And Manufacturing Company Self-cleaning chemical vapor deposition apparatus and method
US5055276A (en) * 1989-11-15 1991-10-08 Huckins Harold A Ceramic whisker growing system
US5039501A (en) * 1990-04-12 1991-08-13 General Motors Corporation Method for growing silicon carbide whiskers

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5213169B2 (enrdf_load_stackoverflow) * 1972-06-23 1977-04-12
JPS4932719A (enrdf_load_stackoverflow) * 1972-07-27 1974-03-26
JPS5228758A (en) * 1975-08-29 1977-03-03 Mitsubishi Heavy Ind Ltd Prepairing process of failured and leaked thin tube for heat exchanger s
JPS5820799A (ja) * 1981-07-28 1983-02-07 Tateho Kagaku Kogyo Kk 炭化珪素ウイスカ−の製造法

Also Published As

Publication number Publication date
JPS623098A (ja) 1987-01-09

Similar Documents

Publication Publication Date Title
JPH0353279B2 (enrdf_load_stackoverflow)
JPS6112844B2 (enrdf_load_stackoverflow)
JP3092675B2 (ja) オキシナイトライドガラス及びその製造方法
JPS5913442B2 (ja) 高純度の型窒化珪素の製造法
JPS6111886B2 (enrdf_load_stackoverflow)
US3514256A (en) Fibrous corundum and its preparation
EP0272773B1 (en) Process for production silicon carbide whiskers
JPH0640713A (ja) 石英粉の脱水方法
JPS6122000A (ja) 炭化珪素ウイスカ−の製造法
JPH0575694B2 (enrdf_load_stackoverflow)
JPS62260798A (ja) 炭化ケイ素ウイスカ−の製造方法
JPS60141698A (ja) 炭化珪素ウイスカ−の製造方法
JPS62260797A (ja) 高純度炭化ケイ素ウイスカ−の製造方法
JPH0324440B2 (enrdf_load_stackoverflow)
JPS63103898A (ja) 高純度炭化ケイ素ウイスカ−の製造方法
JPH0633237B2 (ja) 高純度炭化ケイ素ウイスカ−の製造方法
JPH10203818A (ja) 低酸素ケイ素造粒物及びその製造方法並びに窒化ケイ素の製造方法
JPS6272600A (ja) 炭化珪素ウイスカ−の製法
JPH0353280B2 (enrdf_load_stackoverflow)
JPH0351679B2 (enrdf_load_stackoverflow)
JPH03353B2 (enrdf_load_stackoverflow)
JPS62113799A (ja) 炭化ケイ素ウイスカ−の製造方法
JPS58176109A (ja) α型窒化けい素の製造方法
JPS63156100A (ja) 炭化ケイ素ウイスカ−の製造方法
JPS6126600A (ja) β型炭化ケイ素ウイスカ−の製造方法