JPH0351089B2 - - Google Patents

Info

Publication number
JPH0351089B2
JPH0351089B2 JP58020960A JP2096083A JPH0351089B2 JP H0351089 B2 JPH0351089 B2 JP H0351089B2 JP 58020960 A JP58020960 A JP 58020960A JP 2096083 A JP2096083 A JP 2096083A JP H0351089 B2 JPH0351089 B2 JP H0351089B2
Authority
JP
Japan
Prior art keywords
silicon
gas
type
semiconductor
indium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58020960A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59147427A (ja
Inventor
Kazunobu Tanaka
Akihisa Matsuda
Masamichi Kohitsu
Takao Kaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58020960A priority Critical patent/JPS59147427A/ja
Publication of JPS59147427A publication Critical patent/JPS59147427A/ja
Publication of JPH0351089B2 publication Critical patent/JPH0351089B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP58020960A 1983-02-10 1983-02-10 シリコン半導体の製法 Granted JPS59147427A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58020960A JPS59147427A (ja) 1983-02-10 1983-02-10 シリコン半導体の製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58020960A JPS59147427A (ja) 1983-02-10 1983-02-10 シリコン半導体の製法

Publications (2)

Publication Number Publication Date
JPS59147427A JPS59147427A (ja) 1984-08-23
JPH0351089B2 true JPH0351089B2 (enrdf_load_stackoverflow) 1991-08-05

Family

ID=12041739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58020960A Granted JPS59147427A (ja) 1983-02-10 1983-02-10 シリコン半導体の製法

Country Status (1)

Country Link
JP (1) JPS59147427A (enrdf_load_stackoverflow)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56107551A (en) * 1980-01-30 1981-08-26 Fuji Photo Film Co Ltd Amorphous semiconductor having chemical modification
JPS57115558A (en) * 1981-01-09 1982-07-19 Canon Inc Photoconductive material

Also Published As

Publication number Publication date
JPS59147427A (ja) 1984-08-23

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