JPH035080Y2 - - Google Patents
Info
- Publication number
- JPH035080Y2 JPH035080Y2 JP1982185079U JP18507982U JPH035080Y2 JP H035080 Y2 JPH035080 Y2 JP H035080Y2 JP 1982185079 U JP1982185079 U JP 1982185079U JP 18507982 U JP18507982 U JP 18507982U JP H035080 Y2 JPH035080 Y2 JP H035080Y2
- Authority
- JP
- Japan
- Prior art keywords
- charged beam
- charged
- detection element
- hole
- scattered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Electron Sources, Ion Sources (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18507982U JPS5988857U (ja) | 1982-12-07 | 1982-12-07 | 荷電ビ−ム測定装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18507982U JPS5988857U (ja) | 1982-12-07 | 1982-12-07 | 荷電ビ−ム測定装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5988857U JPS5988857U (ja) | 1984-06-15 |
| JPH035080Y2 true JPH035080Y2 (cs) | 1991-02-08 |
Family
ID=30400124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18507982U Granted JPS5988857U (ja) | 1982-12-07 | 1982-12-07 | 荷電ビ−ム測定装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5988857U (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL2008174C2 (en) * | 2012-01-24 | 2013-08-21 | Mapper Lithography Ip Bv | Device for spot size measurement at wafer level using a knife edge and a method for manufacturing such a device. |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5780730A (en) * | 1980-11-07 | 1982-05-20 | Hitachi Ltd | Semiconductor observing device |
-
1982
- 1982-12-07 JP JP18507982U patent/JPS5988857U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5988857U (ja) | 1984-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2842879B2 (ja) | 表面分析方法および装置 | |
| US4843246A (en) | Apparatus for detecting the position of incidence of a beam of charge carriers on a target | |
| JPS6127899B2 (cs) | ||
| US5594246A (en) | Method and apparatus for x-ray analyses | |
| US4677296A (en) | Apparatus and method for measuring lengths in a scanning particle microscope | |
| US4385238A (en) | Reregistration system for a charged particle beam exposure system | |
| JPH035080Y2 (cs) | ||
| JPH05182625A (ja) | 対物レンズ | |
| JPS6341401B2 (cs) | ||
| JPH0754687B2 (ja) | パターン検査方法およびその装置 | |
| US4983864A (en) | Electronic beam drawing apparatus | |
| JPS6372116A (ja) | X線露光装置 | |
| JP2701764B2 (ja) | 荷電粒子ビームの寸法測定装置および測定方法 | |
| JPS584314B2 (ja) | 電子線測定装置 | |
| JPH0580158A (ja) | 荷電粒子線測定装置 | |
| JPS5878356A (ja) | 走査形電子顕微鏡 | |
| JPS5999215A (ja) | 物体の表面高さ測定装置 | |
| JPH04163931A (ja) | マスクパターンの測定方法 | |
| JPS6316687B2 (cs) | ||
| JP2500423Y2 (ja) | 電子顕微鏡 | |
| JPH07111946B2 (ja) | X線露光マスクのパターン検査方法 | |
| JPH1125899A (ja) | 二次電子検出装置及びマーク検出装置 | |
| JPH02266208A (ja) | 膜厚測定方法 | |
| JPH01110206A (ja) | 微細形状計測方法 | |
| JPS58168906A (ja) | 物体の表面高さ測定装置 |