JPH0347728B2 - - Google Patents

Info

Publication number
JPH0347728B2
JPH0347728B2 JP56154635A JP15463581A JPH0347728B2 JP H0347728 B2 JPH0347728 B2 JP H0347728B2 JP 56154635 A JP56154635 A JP 56154635A JP 15463581 A JP15463581 A JP 15463581A JP H0347728 B2 JPH0347728 B2 JP H0347728B2
Authority
JP
Japan
Prior art keywords
gas
vapor phase
starting material
material gas
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56154635A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5856324A (ja
Inventor
Kenya Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15463581A priority Critical patent/JPS5856324A/ja
Publication of JPS5856324A publication Critical patent/JPS5856324A/ja
Publication of JPH0347728B2 publication Critical patent/JPH0347728B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
JP15463581A 1981-09-29 1981-09-29 気相成長方法 Granted JPS5856324A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15463581A JPS5856324A (ja) 1981-09-29 1981-09-29 気相成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15463581A JPS5856324A (ja) 1981-09-29 1981-09-29 気相成長方法

Publications (2)

Publication Number Publication Date
JPS5856324A JPS5856324A (ja) 1983-04-04
JPH0347728B2 true JPH0347728B2 (enrdf_load_stackoverflow) 1991-07-22

Family

ID=15588505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15463581A Granted JPS5856324A (ja) 1981-09-29 1981-09-29 気相成長方法

Country Status (1)

Country Link
JP (1) JPS5856324A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7968362B2 (en) 2001-03-27 2011-06-28 Ricoh Company, Ltd. Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
JP4749792B2 (ja) * 2005-08-03 2011-08-17 国立大学法人東京農工大学 アルミニウム系ｉｉｉ族窒化物結晶の製造方法および結晶積層基板

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPL PHYS LETT *
JAPAN J APPL PHYS *

Also Published As

Publication number Publication date
JPS5856324A (ja) 1983-04-04

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