JPH0346980B2 - - Google Patents

Info

Publication number
JPH0346980B2
JPH0346980B2 JP60232252A JP23225285A JPH0346980B2 JP H0346980 B2 JPH0346980 B2 JP H0346980B2 JP 60232252 A JP60232252 A JP 60232252A JP 23225285 A JP23225285 A JP 23225285A JP H0346980 B2 JPH0346980 B2 JP H0346980B2
Authority
JP
Japan
Prior art keywords
semiconductor substrate
gate
well region
insulating film
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60232252A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6292360A (ja
Inventor
Hisayo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP60232252A priority Critical patent/JPS6292360A/ja
Publication of JPS6292360A publication Critical patent/JPS6292360A/ja
Publication of JPH0346980B2 publication Critical patent/JPH0346980B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP60232252A 1985-10-17 1985-10-17 相補型半導体装置 Granted JPS6292360A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60232252A JPS6292360A (ja) 1985-10-17 1985-10-17 相補型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60232252A JPS6292360A (ja) 1985-10-17 1985-10-17 相補型半導体装置

Publications (2)

Publication Number Publication Date
JPS6292360A JPS6292360A (ja) 1987-04-27
JPH0346980B2 true JPH0346980B2 (pm) 1991-07-17

Family

ID=16936357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60232252A Granted JPS6292360A (ja) 1985-10-17 1985-10-17 相補型半導体装置

Country Status (1)

Country Link
JP (1) JPS6292360A (pm)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140009269A (ko) * 2011-01-14 2014-01-22 도레이 카부시키가이샤 성형 재료, 프리프레그, 섬유 강화 복합 재료 및 섬유 강화 복합 재료 적층체 및 섬유 강화 성형 기재의 제조 방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69515271T2 (de) * 1994-12-09 2000-08-10 At & T Corp., New York Doppel-Gateherstellung
JP3440698B2 (ja) * 1996-06-24 2003-08-25 ソニー株式会社 半導体装置の製造方法
US5846871A (en) * 1997-08-26 1998-12-08 Lucent Technologies Inc. Integrated circuit fabrication
EP0936667A1 (en) * 1998-01-20 1999-08-18 Lucent Technologies Inc. Lattice matched barrier for dual doped polysilicon gates

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140009269A (ko) * 2011-01-14 2014-01-22 도레이 카부시키가이샤 성형 재료, 프리프레그, 섬유 강화 복합 재료 및 섬유 강화 복합 재료 적층체 및 섬유 강화 성형 기재의 제조 방법

Also Published As

Publication number Publication date
JPS6292360A (ja) 1987-04-27

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Legal Events

Date Code Title Description
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