JPH0340512B2 - - Google Patents
Info
- Publication number
- JPH0340512B2 JPH0340512B2 JP60060987A JP6098785A JPH0340512B2 JP H0340512 B2 JPH0340512 B2 JP H0340512B2 JP 60060987 A JP60060987 A JP 60060987A JP 6098785 A JP6098785 A JP 6098785A JP H0340512 B2 JPH0340512 B2 JP H0340512B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- semiconductor substrate
- nitride film
- layer
- nitride layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60060987A JPS61220456A (ja) | 1985-03-27 | 1985-03-27 | 半導体基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60060987A JPS61220456A (ja) | 1985-03-27 | 1985-03-27 | 半導体基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61220456A JPS61220456A (ja) | 1986-09-30 |
| JPH0340512B2 true JPH0340512B2 (cs) | 1991-06-19 |
Family
ID=13158291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60060987A Granted JPS61220456A (ja) | 1985-03-27 | 1985-03-27 | 半導体基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61220456A (cs) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2703231B2 (ja) * | 1987-09-02 | 1998-01-26 | 株式会社東芝 | シリコン半導体基板の製造方法 |
| EP0545327A1 (en) * | 1991-12-02 | 1993-06-09 | Matsushita Electric Industrial Co., Ltd. | Thin-film transistor array for use in a liquid crystal display |
| DE4423067C2 (de) * | 1994-07-01 | 1996-05-09 | Daimler Benz Ag | Verfahren zum Herstellen eines isolierten Halbleitersubstrats |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53128285A (en) * | 1977-04-14 | 1978-11-09 | Nec Corp | Semiconductor device and production of the same |
-
1985
- 1985-03-27 JP JP60060987A patent/JPS61220456A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61220456A (ja) | 1986-09-30 |
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