JPH0340453A - 高周波高出力トランジスターパッケージ - Google Patents
高周波高出力トランジスターパッケージInfo
- Publication number
- JPH0340453A JPH0340453A JP458190A JP458190A JPH0340453A JP H0340453 A JPH0340453 A JP H0340453A JP 458190 A JP458190 A JP 458190A JP 458190 A JP458190 A JP 458190A JP H0340453 A JPH0340453 A JP H0340453A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- copper
- semiconductor element
- package
- tungsten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000010949 copper Substances 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 13
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 239000010937 tungsten Substances 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 238000005219 brazing Methods 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000011162 core material Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 8
- 239000007769 metal material Substances 0.000 description 7
- 229910052573 porcelain Inorganic materials 0.000 description 6
- 229910052790 beryllium Inorganic materials 0.000 description 5
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 229910000833 kovar Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 241000366880 Quadrans Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241000973887 Takayama Species 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005802 health problem Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000004018 waxing Methods 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP458190A JPH0340453A (ja) | 1990-01-16 | 1990-01-16 | 高周波高出力トランジスターパッケージ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP458190A JPH0340453A (ja) | 1990-01-16 | 1990-01-16 | 高周波高出力トランジスターパッケージ |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57157684A Division JPS5946050A (ja) | 1982-09-09 | 1982-09-09 | 半導体用セラミツクパツケ−ジ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0340453A true JPH0340453A (ja) | 1991-02-21 |
| JPH0465544B2 JPH0465544B2 (enrdf_load_stackoverflow) | 1992-10-20 |
Family
ID=11588006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP458190A Granted JPH0340453A (ja) | 1990-01-16 | 1990-01-16 | 高周波高出力トランジスターパッケージ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0340453A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0773739A (ja) * | 1993-09-03 | 1995-03-17 | Nippon Kokuen Kogyo Kk | フレキシブル回路基板及びその製造方法 |
| US9192762B2 (en) | 2011-09-20 | 2015-11-24 | Braun Gmbh | Therapeutic micro-current delivery devices and methods thereof |
| CN106876357A (zh) * | 2017-01-24 | 2017-06-20 | 东莞市阿甘半导体有限公司 | 用于芯片封装的电极以及使用该电极的芯片封装结构 |
-
1990
- 1990-01-16 JP JP458190A patent/JPH0340453A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0773739A (ja) * | 1993-09-03 | 1995-03-17 | Nippon Kokuen Kogyo Kk | フレキシブル回路基板及びその製造方法 |
| US9192762B2 (en) | 2011-09-20 | 2015-11-24 | Braun Gmbh | Therapeutic micro-current delivery devices and methods thereof |
| CN106876357A (zh) * | 2017-01-24 | 2017-06-20 | 东莞市阿甘半导体有限公司 | 用于芯片封装的电极以及使用该电极的芯片封装结构 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0465544B2 (enrdf_load_stackoverflow) | 1992-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5972737A (en) | Heat-dissipating package for microcircuit devices and process for manufacture | |
| US5050040A (en) | Composite material, a heat-dissipating member using the material in a circuit system, the circuit system | |
| US4827082A (en) | Ceramic package | |
| JPH0261539B2 (enrdf_load_stackoverflow) | ||
| JPS6327860B2 (enrdf_load_stackoverflow) | ||
| JPH04152642A (ja) | 接着用ペースト | |
| JPH0340453A (ja) | 高周波高出力トランジスターパッケージ | |
| WO2020217851A1 (ja) | 電子部品モジュール、及び、窒化珪素回路基板 | |
| JPH0613494A (ja) | 半導体装置用基板 | |
| JP2012064616A (ja) | 高放熱型電子部品収納用パッケージ | |
| JPH0348448A (ja) | Ｃｃｄパッケージ | |
| JP2517024B2 (ja) | セラミックパッケ―ジとその製造方法 | |
| JP2000183253A (ja) | 半導体素子収納用パッケージ | |
| JP4454164B2 (ja) | 半導体素子収納用パッケージ | |
| JPH0997865A (ja) | 放熱部品 | |
| JPH0340455A (ja) | セラミックチップキャリヤー | |
| JPH0340454A (ja) | ピン、グリッドアレイパッケージ | |
| JPH0786444A (ja) | 半導体用複合放熱基板の製造方法 | |
| JP2001284509A (ja) | Ａｌ−ＳｉＣ複合体 | |
| JPH05211248A (ja) | 半導体搭載用複合放熱基板及びその製造方法 | |
| JP2525232B2 (ja) | セラミックパッケ―ジおよびその製造方法 | |
| JP3850312B2 (ja) | 半導体素子収納用パッケージおよび半導体装置 | |
| JPH0255271A (ja) | 窒化アルミニウム基板と金属板との接合構造 | |
| JPH02146748A (ja) | 半導体容器 | |
| JP2000349098A (ja) | セラミック基板と半導体素子の接合体及びその製造方法 |