JPH033928B2 - - Google Patents
Info
- Publication number
- JPH033928B2 JPH033928B2 JP22408984A JP22408984A JPH033928B2 JP H033928 B2 JPH033928 B2 JP H033928B2 JP 22408984 A JP22408984 A JP 22408984A JP 22408984 A JP22408984 A JP 22408984A JP H033928 B2 JPH033928 B2 JP H033928B2
- Authority
- JP
- Japan
- Prior art keywords
- ions
- ohmic contact
- film
- type gaas
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000002500 ions Chemical class 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 33
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 25
- 238000005468 ion implantation Methods 0.000 claims description 19
- 239000010408 film Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 8
- 230000004913 activation Effects 0.000 claims description 6
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000009684 ion beam mixing Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000029052 metamorphosis Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22408984A JPS61102730A (ja) | 1984-10-26 | 1984-10-26 | オ−ミツク接触の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22408984A JPS61102730A (ja) | 1984-10-26 | 1984-10-26 | オ−ミツク接触の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61102730A JPS61102730A (ja) | 1986-05-21 |
| JPH033928B2 true JPH033928B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-01-21 |
Family
ID=16808373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22408984A Granted JPS61102730A (ja) | 1984-10-26 | 1984-10-26 | オ−ミツク接触の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61102730A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10247747A (ja) * | 1997-03-05 | 1998-09-14 | Toshiba Corp | 半導体発光素子およびその製造方法 |
-
1984
- 1984-10-26 JP JP22408984A patent/JPS61102730A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61102730A (ja) | 1986-05-21 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |