JPH0330311B2 - - Google Patents
Info
- Publication number
- JPH0330311B2 JPH0330311B2 JP13345182A JP13345182A JPH0330311B2 JP H0330311 B2 JPH0330311 B2 JP H0330311B2 JP 13345182 A JP13345182 A JP 13345182A JP 13345182 A JP13345182 A JP 13345182A JP H0330311 B2 JPH0330311 B2 JP H0330311B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thickness
- carrier concentration
- concentration
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 25
- 229910005540 GaP Inorganic materials 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 11
- 230000000694 effects Effects 0.000 description 10
- 230000009102 absorption Effects 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000009103 reabsorption Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57133451A JPS5923578A (ja) | 1982-07-29 | 1982-07-29 | 発光半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57133451A JPS5923578A (ja) | 1982-07-29 | 1982-07-29 | 発光半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5923578A JPS5923578A (ja) | 1984-02-07 |
| JPH0330311B2 true JPH0330311B2 ( ) | 1991-04-26 |
Family
ID=15105080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57133451A Granted JPS5923578A (ja) | 1982-07-29 | 1982-07-29 | 発光半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5923578A ( ) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01245569A (ja) * | 1988-03-28 | 1989-09-29 | Toshiba Corp | ＧａＰ緑色発光素子とその製造方法 |
| JP5862472B2 (ja) * | 2012-06-15 | 2016-02-16 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4931290A ( ) * | 1972-07-21 | 1974-03-20 | ||
| JPS52147088A (en) * | 1976-06-01 | 1977-12-07 | Mitsubishi Electric Corp | Light emitting device |
-
1982
- 1982-07-29 JP JP57133451A patent/JPS5923578A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4931290A ( ) * | 1972-07-21 | 1974-03-20 | ||
| JPS52147088A (en) * | 1976-06-01 | 1977-12-07 | Mitsubishi Electric Corp | Light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5923578A (ja) | 1984-02-07 |
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