JPH0330300B2 - - Google Patents
Info
- Publication number
- JPH0330300B2 JPH0330300B2 JP55178073A JP17807380A JPH0330300B2 JP H0330300 B2 JPH0330300 B2 JP H0330300B2 JP 55178073 A JP55178073 A JP 55178073A JP 17807380 A JP17807380 A JP 17807380A JP H0330300 B2 JPH0330300 B2 JP H0330300B2
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- polycrystalline silicon
- film
- substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 23
- 239000010410 layer Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 18
- 239000012212 insulator Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000000992 sputter etching Methods 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 18
- 150000004767 nitrides Chemical class 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 241000293849 Cordylanthus Species 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17807380A JPS57102045A (en) | 1980-12-18 | 1980-12-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17807380A JPS57102045A (en) | 1980-12-18 | 1980-12-18 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57102045A JPS57102045A (en) | 1982-06-24 |
| JPH0330300B2 true JPH0330300B2 (ko) | 1991-04-26 |
Family
ID=16042139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17807380A Granted JPS57102045A (en) | 1980-12-18 | 1980-12-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57102045A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59215741A (ja) * | 1983-05-24 | 1984-12-05 | Mitsubishi Electric Corp | 半導体集積回路装置の製造方法 |
| JPS59225543A (ja) * | 1983-06-06 | 1984-12-18 | Mitsubishi Electric Corp | 素子間分離領域の形成方法 |
| US5229316A (en) * | 1992-04-16 | 1993-07-20 | Micron Technology, Inc. | Semiconductor processing method for forming substrate isolation trenches |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54589A (en) * | 1977-06-03 | 1979-01-05 | Hitachi Ltd | Burying method of insulator |
-
1980
- 1980-12-18 JP JP17807380A patent/JPS57102045A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54589A (en) * | 1977-06-03 | 1979-01-05 | Hitachi Ltd | Burying method of insulator |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57102045A (en) | 1982-06-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3382143B2 (ja) | シリコン基板に分離領域を形成する方法および分離領域の構造 | |
| US4810668A (en) | Semiconductor device element-isolation by oxidation of polysilicon in trench | |
| JPH0748491B2 (ja) | 集積回路半導体デバイスの製造方法 | |
| JPH0427702B2 (ko) | ||
| JPH10116893A (ja) | 半導体装置及び素子分離膜形成方法 | |
| US6194257B1 (en) | Fabrication method of gate electrode having dual gate insulating film | |
| JPH0330300B2 (ko) | ||
| JPH10289946A (ja) | 半導体装置の製造方法 | |
| JP2629141B2 (ja) | 半導体装置の素子の隔離方法 | |
| JP2812013B2 (ja) | 半導体装置の製造方法 | |
| JPH0555361A (ja) | 半導体装置及びその製造方法 | |
| JP2722518B2 (ja) | 半導体装置の製造方法 | |
| KR100241517B1 (ko) | 반도체 장치의 소자분리막 형성방법 | |
| JP3360970B2 (ja) | 半導体装置の製造方法 | |
| JPS5849027B2 (ja) | 半導体集積回路装置の製法 | |
| JP2995948B2 (ja) | 半導体装置の製造方法 | |
| JPS6387741A (ja) | 半導体装置の製造方法 | |
| JP3042804B2 (ja) | 素子分離方法及び半導体装置 | |
| JPS6312381B2 (ko) | ||
| JPH023257A (ja) | フィールドシールド構造を有する半導体装置およびその製造方法 | |
| JPH0442948A (ja) | 半導体装置の製造方法 | |
| KR0167674B1 (ko) | 반도체 소자의 소자분리막 형성방법 | |
| KR0131367B1 (ko) | 반도체 소자의 필드 산화막 형성방법 | |
| JPS60157235A (ja) | 分離絶縁膜の形成方法 | |
| JPS6336565A (ja) | 半導体装置の製造方法 |