JPH0329193B2 - - Google Patents

Info

Publication number
JPH0329193B2
JPH0329193B2 JP59182081A JP18208184A JPH0329193B2 JP H0329193 B2 JPH0329193 B2 JP H0329193B2 JP 59182081 A JP59182081 A JP 59182081A JP 18208184 A JP18208184 A JP 18208184A JP H0329193 B2 JPH0329193 B2 JP H0329193B2
Authority
JP
Japan
Prior art keywords
photodiode
semiconductor device
region
optical semiconductor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59182081A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6158280A (ja
Inventor
Toshibumi Yoshikawa
Hiroshi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59182081A priority Critical patent/JPS6158280A/ja
Publication of JPS6158280A publication Critical patent/JPS6158280A/ja
Publication of JPH0329193B2 publication Critical patent/JPH0329193B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H10F30/245—Bipolar phototransistors

Landscapes

  • Light Receiving Elements (AREA)
JP59182081A 1984-08-29 1984-08-29 光半導体装置 Granted JPS6158280A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59182081A JPS6158280A (ja) 1984-08-29 1984-08-29 光半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59182081A JPS6158280A (ja) 1984-08-29 1984-08-29 光半導体装置

Publications (2)

Publication Number Publication Date
JPS6158280A JPS6158280A (ja) 1986-03-25
JPH0329193B2 true JPH0329193B2 (enrdf_load_stackoverflow) 1991-04-23

Family

ID=16112018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59182081A Granted JPS6158280A (ja) 1984-08-29 1984-08-29 光半導体装置

Country Status (1)

Country Link
JP (1) JPS6158280A (enrdf_load_stackoverflow)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51138185A (en) * 1975-05-26 1976-11-29 Oki Electric Ind Co Ltd Semi-conductor device
JPS55150280A (en) * 1979-05-11 1980-11-22 Sharp Corp Device for correcting light semiconductor device

Also Published As

Publication number Publication date
JPS6158280A (ja) 1986-03-25

Similar Documents

Publication Publication Date Title
US4318115A (en) Dual junction photoelectric semiconductor device
US5040039A (en) Semiconductor photodetector device
JPS6161457A (ja) 光センサおよびその製造方法
US20040061152A1 (en) Semiconductor photosensor device
JP5670360B2 (ja) 半導体受光素子及びオプトエレクトロニクス装置
KR940011915B1 (ko) 칼라필터장치
US4626675A (en) Demultiplexing photodiode sensitive to plural wavelength bands
US4972252A (en) Photosensor with a capacitor connected in parallel so as to increase the dynamic range and to improve the holding characteristics of the photosensor
JPS60241277A (ja) 半導体装置
JPS5952973B2 (ja) 半導体による光検知回路の温度補償回路
JPS6116580A (ja) 光検知半導体装置
JPH0329193B2 (enrdf_load_stackoverflow)
US6989522B2 (en) Light-receiving module and light-receiving device having malfunction preventing structure
JPH1050967A (ja) 受光演算素子
JP3497977B2 (ja) 受光素子およびこれを用いた光結合装置
JPS6222273B2 (enrdf_load_stackoverflow)
JP3531283B2 (ja) 日射センサ
JPS626170B2 (enrdf_load_stackoverflow)
CA1295402C (en) Photosensor
JPS5742175A (en) Infrared ray detector
JPH0621815B2 (ja) 半導体光検出装置
JPS6244706B2 (enrdf_load_stackoverflow)
JP3831639B2 (ja) 受光素子及び受光モジュール
JPH09210793A (ja) カラーイメージセンサ
JPH0567800A (ja) 光半導体装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term