JPS5742175A - Infrared ray detector - Google Patents

Infrared ray detector

Info

Publication number
JPS5742175A
JPS5742175A JP55117920A JP11792080A JPS5742175A JP S5742175 A JPS5742175 A JP S5742175A JP 55117920 A JP55117920 A JP 55117920A JP 11792080 A JP11792080 A JP 11792080A JP S5742175 A JPS5742175 A JP S5742175A
Authority
JP
Japan
Prior art keywords
infrared ray
assembly
bumps
regions
ray detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55117920A
Other languages
Japanese (ja)
Inventor
Shigeki Hamashima
Hiroshi Takigawa
Mitsuo Yoshikawa
Michiharu Ito
Tomoshi Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55117920A priority Critical patent/JPS5742175A/en
Publication of JPS5742175A publication Critical patent/JPS5742175A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain an highly sensitive device by having incoming infrared ray reaching a photoelectric convertion region of a detection element through a concave section provided on the back thereof in an infrared ray detector in which the infrared ray detecting element is integrated with a circuit element for processing the output signal thereof. CONSTITUTION:An SiO2 film 3 covers the surface of an integrated circuit element 2 made up of an Si substrate 20 having a plurality of active regions 21-24 and after windows are etched on the regions 21-24, columnar bumps 4a-4d comprising a low melting point such as In are mounted on the regions 21-24. Then, a plurality of mesa tops 11-14 provided on the rear surface of an assembly of infrared ray detecting element are fastened on the top of the bumps so that the assembly 1 is mechanically and chemically combined with the elements 2 through the bumps 4a-4d. Concave sections 31-34 are engraved on the back of the assembly corresponding to reverse conducting type layers 11a-14a provided in the mesa tops 11-14 of the assembly 1. Infrared rays is made incident to the concave sections while the majority of the infrared rays is contributed to the signals.
JP55117920A 1980-08-26 1980-08-26 Infrared ray detector Pending JPS5742175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55117920A JPS5742175A (en) 1980-08-26 1980-08-26 Infrared ray detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55117920A JPS5742175A (en) 1980-08-26 1980-08-26 Infrared ray detector

Publications (1)

Publication Number Publication Date
JPS5742175A true JPS5742175A (en) 1982-03-09

Family

ID=14723443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55117920A Pending JPS5742175A (en) 1980-08-26 1980-08-26 Infrared ray detector

Country Status (1)

Country Link
JP (1) JPS5742175A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4752816A (en) * 1983-04-05 1988-06-21 Plessey Overseas Limited Electronic component
JPH07193268A (en) * 1991-10-30 1995-07-28 At & T Corp Quantum well light receiving device
US6537855B2 (en) * 1999-04-28 2003-03-25 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
WO2004086504A1 (en) 2003-03-27 2004-10-07 Hamamatsu Photonics K.K. Photodiode array and production method thereof, and radiation detector
EP1608021A1 (en) * 2003-03-27 2005-12-21 Hamamatsu Photonics K.K. Photodiode array and production method thereof, and radiation detector

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4752816A (en) * 1983-04-05 1988-06-21 Plessey Overseas Limited Electronic component
JPH07193268A (en) * 1991-10-30 1995-07-28 At & T Corp Quantum well light receiving device
US6537855B2 (en) * 1999-04-28 2003-03-25 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
WO2004086504A1 (en) 2003-03-27 2004-10-07 Hamamatsu Photonics K.K. Photodiode array and production method thereof, and radiation detector
EP1608021A1 (en) * 2003-03-27 2005-12-21 Hamamatsu Photonics K.K. Photodiode array and production method thereof, and radiation detector
EP1608020A1 (en) * 2003-03-27 2005-12-21 Hamamatsu Photonics K.K. Photodiode array and production method thereof, and radiation detector
EP1608020A4 (en) * 2003-03-27 2007-04-18 Hamamatsu Photonics Kk Photodiode array and production method thereof, and radiation detector
EP1608021A4 (en) * 2003-03-27 2007-05-02 Hamamatsu Photonics Kk Photodiode array and production method thereof, and radiation detector
US7408238B2 (en) 2003-03-27 2008-08-05 Hamamatsu Photonics K.K. Photodiode array and production method thereof, and radiation detector
US7888766B2 (en) 2003-03-27 2011-02-15 Hamamatsu Photonics K.K. Photodiode array and radiation detector having depressions of predetermined depth formed in regions corresponding to the regions where the photodiodes are formed in the semiconductor substrate

Similar Documents

Publication Publication Date Title
US20040079865A1 (en) Back side incident type image pickup sensor
JPS5742175A (en) Infrared ray detector
US4626675A (en) Demultiplexing photodiode sensitive to plural wavelength bands
JPS57167002A (en) Focus detecting element
JPH0265181A (en) Infrared detector
JPS6413767A (en) Semiconductor device
US5438200A (en) Composite photodetector substrate and method of forming the same
JPS62104163A (en) Photoelectric converter
JP2002324910A (en) Optical semiconductor device
JPH065832A (en) Apparatus and method for position detection
JPS5645086A (en) Photosensor
JPS62272564A (en) Infrared ray detector
JPS59148372A (en) Photosensitive device
JP2676814B2 (en) Multi-type light receiving element
JPH10125888A (en) Semiconductor energy detector
JPS63161680A (en) Semiconductor photodetector
JPS5399889A (en) Composite photo detector
JPS5836078A (en) Solid-state image pickup device
JPS57128082A (en) Light-receiving element
JPS53126885A (en) Semiconductor photo detector
JPH03232279A (en) Photosensor
JPS62232958A (en) Semiconductor image pick-up element
GB2136202A (en) Photodiode
JPS566125A (en) Photoelectric transducer
JPH0473313B2 (en)