JPS59148372A - Photosensitive device - Google Patents
Photosensitive deviceInfo
- Publication number
- JPS59148372A JPS59148372A JP58022534A JP2253483A JPS59148372A JP S59148372 A JPS59148372 A JP S59148372A JP 58022534 A JP58022534 A JP 58022534A JP 2253483 A JP2253483 A JP 2253483A JP S59148372 A JPS59148372 A JP S59148372A
- Authority
- JP
- Japan
- Prior art keywords
- light
- optical filter
- substrate
- filter
- photosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 230000003287 optical effect Effects 0.000 claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 abstract description 7
- 230000006866 deterioration Effects 0.000 abstract description 6
- 239000000853 adhesive Substances 0.000 abstract description 5
- 230000001070 adhesive effect Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- 238000000149 argon plasma sintering Methods 0.000 abstract description 3
- 108010010803 Gelatin Proteins 0.000 description 2
- 229920000159 gelatin Polymers 0.000 description 2
- 239000008273 gelatin Substances 0.000 description 2
- 235000019322 gelatine Nutrition 0.000 description 2
- 235000011852 gelatine desserts Nutrition 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 241001085205 Prenanthella exigua Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】 （イ〉 産業上の利用分野 本発明は光学フィルタを備えた感光装置に関する。[Detailed description of the invention] (B) Industrial application fields The present invention relates to a photosensitive device equipped with an optical filter.
（ロ） 従 来 技 術
７モＪＬ−ファスシリコンの如きアモルファス半導体等
の薄膜状光半導体層を光活性層とする感光装置が実用化
されるに至って来た。斯る感光装置は薄膜状光半導体層
を廟するが故に、該半導体層を支持する支持基板は不可
欠な存在である。本願出願人は上記不可欠な支持基板と
して透光性の材料を使用することにより、該支持基板を
受光面とする感光装置を実用化し、更には上記支持基板
の光入射面、即ち上記光半導体層が配置せしめられてい
る主面とは逆の主面に光学フィルタを被着せしめた感光
装置をも試作した。(b) Prior Art 7 Photosensitive devices in which a photoactive layer is a thin film-like photosemiconductor layer made of an amorphous semiconductor such as JL-fasic silicon have come into practical use. Since such a photosensitive device includes a thin optical semiconductor layer, a support substrate that supports the semiconductor layer is essential. By using a light-transmitting material as the above-mentioned indispensable supporting substrate, the applicant has commercialized a photosensitive device in which the supporting substrate serves as a light-receiving surface. We also prototyped a photosensitive device in which an optical filter was attached to the main surface opposite to the main surface on which the photosensitive material was placed.
第１図は斯る感光装置を示し、＜１ンは例えばガラス・
耐熱プラスチック等から成る透光性の支持基板、（２）
は該支持基板（１）の一方の主面に設けられた感光領域
で、該感光領域（２）は支持基板（１）側から第１電極
層（３）、薄膜状半導体層（４）及び第２電極層〈５）
が順次積層きれた構造を持つ。上記第１１’１ｔｓｉＮ
ａ（３〉ハａ化スス（Ｓ ｎｏ ２） ・酸化イン’、
； ’＞ムスス（Ｉｎ２０３ ５ｎ０２）等の透光性材
料がら成り、上記半導体層（４）は面方向にＰ型層、工
型層、Ｎ型層を重畳せしめたＰＩＮ接合を有する膜厚サ
ブミクロン乃至ミクロンオーダのアモルファスシリコン
から形成され、更に上記第２電極層（５〉は該アモルフ
ァスシリコンとオーミ／り接触するアルミニウム等の金
属から成っている。FIG. 1 shows such a photosensitive device, where <1 is made of glass, for example.
Translucent support substrate made of heat-resistant plastic, etc. (2)
is a photosensitive area provided on one main surface of the supporting substrate (1), and the photosensitive area (2) includes a first electrode layer (3), a thin film semiconductor layer (4), and a thin film semiconductor layer (4) from the supporting substrate (1) side. Second electrode layer <5)
It has a structure in which layers are sequentially stacked. The above 11'1tsiN
a (3> Soot halide (S no 2) ・In oxide',
The semiconductor layer (4) is made of a light-transmitting material such as mussus (In203 5n02), and has a submicron film thickness with a PIN junction in which a P-type layer, an engineering layer, and an N-type layer are superimposed in the plane direction. The second electrode layer (5>) is made of a metal such as aluminum that is in ohmic contact with the amorphous silicon.
従って、上記支持基板＜１）並びに第１電極層（３）を
透過して光が光半導体層（４）に照射せしめられると、
上記両′１１ｔ極（３）（５）間に光起電力が生起上し
められる。Therefore, when light is transmitted through the support substrate <1) and the first electrode layer (3) and is irradiated onto the optical semiconductor layer (4),
A photovoltaic force is generated between the two '11t poles (3) and (5).
（６〉は−上記支持基板（１）の他方の下面に透光性の
接着剤り７）を介して被着せしめられた例えば特定の波
長帯域のみの光を透過せしめる帯域透過型の光学フィル
タテ、より具体的にはゼラチン等ノ有機物質を赤、緑若
しくは青等に着色せしめた有色フィルタである。斯る有
色の光学フィルタ（６）としては例えばイーストマン・
コダック社のＷｒａｔｔｅｎ ｇｅｌａｔｉｎ ｆｉｌ
ｔｅｒが市販されており、赤色フィルタとしてはそのＮ
ｏ、２５、緑色フィルタと。(6> is - for example, a band-passing optical filter plate that transmits light only in a specific wavelength band, which is attached to the other lower surface of the support substrate (1) via a transparent adhesive 7). More specifically, it is a colored filter in which an organic substance such as gelatin is colored red, green, or blue. As such a colored optical filter (6), for example, Eastman
Kodak's Wratten gelatin fil
ter is commercially available, and its N
o, 25, with a green filter.
してはＮ ｏ、 ５８、また青色フィルタとしてはＮｏ
、４７Ｂの各品番のものが使用される。As for the blue filter, it is No. 58, and as a blue filter it is No. 58.
, 47B are used.
この様に支持基板り１）の光入射面に光学フィルタ（６
）を配置することによって斯るフィルタ特性に応じた特
定波長の光が感光領域（２）に照射せしめられる。In this way, the optical filter (6) is placed on the light incident surface of the support substrate 1).
), the photosensitive area (2) is irradiated with light of a specific wavelength according to the filter characteristics.
尚、第１図に於いて、（８）（８）は光照射により発生
した光起電力を外部に導出する一対のリード体で、上記
第１電極層（３）並びに第２電極層（５）と電気的且つ
機械的に結合きれている。更に、（９）は上記リード体
（８）（８）並びに感光領域（２）をモールドするエポ
キシ系の着色モールド体である。In FIG. 1, (8) and (8) are a pair of lead bodies that lead the photovoltaic force generated by light irradiation to the outside, and are connected to the first electrode layer (3) and the second electrode layer (5). ) and are electrically and mechanically disconnected. Further, (9) is an epoxy-based colored mold body for molding the lead bodies (8), (8) and the photosensitive area (2).
然し乍ら、斯る構造の感光装置は構成に欠くことのでき
ない支持基板（１）によって光学フィルタ（６）の支持
をも兼用せしめることができる反面、光学フィルタ（６
）が光入射面に露出するために傷付き易く、この傷に、
より光学フィルタ（６）透過後の入射光が散乱する危惧
を有していた。特に第２図の如く光学フィルタ（６）と
して上記光、緑及び臂各色フィルタ（６Ｒ）（６Ｇ＞＜
６８）を並置すると共に、各色フィルタ（６Ｒ）（６Ｇ
＞（６Ｂ）に対向して３個の感光領域（２Ｒ） （２Ｇ
＞ （２Ｂ ＞を配置した所謂フル力う−センザに於
いて、入射光の散乱が発生すると、該散乱により隣接せ
る感光領域＜２Ｒ）（２Ｇ＞、（２Ｒ）（２Ｂ）、（２
Ｇ）（２Ｂ）に到達してはならない光が到達する結果、
クロストークを生ぜしめ色識別感度の低下をもたらした
り、中間色等では誤識別する事故を招く。However, in a photosensitive device having such a structure, the support substrate (1), which is essential to the structure, can also serve as support for the optical filter (6);
) is exposed on the light incident surface and is easily scratched, and this scratch causes
There was a fear that the incident light after passing through the optical filter (6) would be scattered. In particular, as shown in FIG. 2, as an optical filter (6), each color filter (6R) (6G><
68), and each color filter (6R) (6G
> Three photosensitive areas (2R) (2G) facing (6B)
> (2B) When scattering of incident light occurs in a so-called full power sensor in which a sensor is arranged, adjacent photosensitive areas <2R) (2G>, (2R) (2B), (2
G) As a result of light reaching (2B) that should not reach,
This may cause crosstalk, resulting in a decrease in color discrimination sensitivity, or may lead to accidents such as erroneous discrimination in intermediate colors.
また、上記傷が深くなると、光学フィルタ（６）により
規制された波長帯域以外の光くホワイト光）が透過し、
Ｓ／Ｎ比を劣化せしめる原因となる。In addition, when the scratches become deep, bright white light outside the wavelength band regulated by the optical filter (6) will pass through.
This causes deterioration of the S/N ratio.
更に、光学フィルタ（６）として安価な有機物質のフィ
ルタを使用すると、該有機フィルタは高価なガラスフィ
ルタ等に較べ表面硬度が低いために、上記光散乱及びＳ
／Ｎ比の劣化の原因となる傷が付く確率が高いのみなら
ず、信頼性の点についても問題を含んでいる。即ち、有
機フィルタは耐湿性に欠は湿気により波打ったり一方向
に反ったり、遂には剥離したりすることがあると共に、
光学的な特性をも変動する欠点を有している。Furthermore, when an inexpensive organic filter is used as the optical filter (6), the organic filter has a lower surface hardness than an expensive glass filter, so the light scattering and S
Not only is there a high probability of scratches causing deterioration of the /N ratio, but there is also a problem in terms of reliability. That is, organic filters lack moisture resistance and may become wavy or warp in one direction due to moisture, and may even peel off.
It also has the disadvantage of varying optical properties.
（ハ）発明の目的
本発明は斯る点に鑑みて為されたものであって、その目
的は、主にクロストーク若しくは感度の低下をもたらす
入射光の散乱及び又はＳ／Ｎ比の劣化を抑圧することに
ある。更に本発明の他の目的は、光学フィルタとして安
価な有機物質から成るフィルタを、信頼性に関する問題
点をも同時に解消せしめた状態で使用可能ならしめるこ
とにある。(c) Purpose of the Invention The present invention has been made in view of the above, and its purpose is mainly to reduce the scattering of incident light that causes crosstalk or a decrease in sensitivity, and/or to reduce the deterioration of the S/N ratio. It consists in suppressing. Still another object of the present invention is to make it possible to use a filter made of an inexpensive organic material as an optical filter while simultaneously solving reliability problems.
（ニ）発明の構成
本発明は、薄膜状光半導体層を含む感光領域を一方の主
面に支持する透光性の支持基板と、該支持基板の他方の
主面に設けられ上記感光領域と対向する光学フィルタと
、該光学フィルタの光入射面を覆い受光面を形成する透
光性の受光基板と、を備えた構成にある。(d) Structure of the Invention The present invention comprises a light-transmitting support substrate that supports a photosensitive region including a thin-film photosemiconductor layer on one main surface, and a light-transmitting support substrate that supports the photosensitive region on the other main surface of the support substrate. It has a configuration including opposing optical filters and a light-transmitting light-receiving substrate that covers the light-incidence surface of the optical filter and forms a light-receiving surface.
（ホ） 実 施 例
第３図は本発明の一実施例を示し第１図の従来例と同し
ものについては同番号がイ」シてあり、（１）は透光性
の支持基板、（２）は感光領域、（３）は第１電極層、
（４〉はアモルファス半導体等の薄膜状光半導体層、（
５〉は第２電極層、（６）は例えば赤、緑若しくは青等
に着色せしめられた有機物質から成る帯域透過型の光学
フィルタ、（７）は透光性の接着剤、（８）（８）はリ
ード体、（９）はモールド体で、異なるところは新たに
上記光学フィルタ（６）の露出セる光入射面を覆い受光
面を形成する透光性の受光基板（１０）を設けたところ
にある。即ち、上記受光基板（１０）はガラス、プラス
チック等の透光性材料から成り、上記光学フィルタ（６
）の光入射面に対し透光性の接着剤（１１）を介して被
着せしめられ、光学フィルタ（６）の露出せる光入射面
を外気から遮断する如く被覆する。(E) Embodiment FIG. 3 shows an embodiment of the present invention. Components that are the same as the conventional example in FIG. (2) is a photosensitive area, (3) is a first electrode layer,
(4> is a thin film optical semiconductor layer such as an amorphous semiconductor, (
5> is a second electrode layer, (6) is a band-passing optical filter made of an organic substance colored, for example, red, green, or blue, (7) is a transparent adhesive, and (8) ( 8) is a lead body, (9) is a molded body, and the difference is that a transparent light-receiving substrate (10) is newly provided to cover the exposed light incident surface of the optical filter (6) and form a light-receiving surface. It's somewhere. That is, the light receiving substrate (10) is made of a transparent material such as glass or plastic, and the optical filter (6) is made of a transparent material such as glass or plastic.
) is applied to the light incident surface of the optical filter (6) via a translucent adhesive (11) to cover the exposed light incident surface of the optical filter (6) so as to shield it from the outside air.
第４図は本発明の他の実施例を示し、光学フィルタ（６
〉を、受光基板（１０〉にエツチング処理若しくは切削
、プレス等の機械的処理により形成された凹部（１２）
に埋設せしめたところに特徴点が存在する。斯る構造に
よると、光学フィルタ（６〉の位置決めが上記凹部（１
２）によって為されると共に、凹部（１２）の周囲が直
接支持基板（１）と当接する結果、該支持基板（１）と
受光基板（１０）との機械的接着強度が上昇する。FIG. 4 shows another embodiment of the present invention, in which an optical filter (6
) into a recess (12) formed on the light-receiving substrate (10) by etching or mechanical processing such as cutting or pressing.
Feature points exist where they are buried. According to such a structure, the positioning of the optical filter (6) is performed by the recess (1).
2), and as a result of the periphery of the recess (12) directly contacting the supporting substrate (1), the mechanical adhesion strength between the supporting substrate (1) and the light-receiving substrate (10) increases.
第５図並びに第６図は本発明の更に他の実施例を各々示
し、支持基板（１）と受光基板（１０）との大きさが相
違しているところに特徴点が存在する。FIGS. 5 and 6 show still other embodiments of the present invention, and the feature lies in the fact that the supporting substrate (1) and the light receiving substrate (10) are different in size.
即ち、第５図の実施例にあっては受光基板（ｌＯ）の方
が大きく、逆に第７図の実施例にあっては支持基板（１
）の方が大きい構成にあり、その各々大きな基板（１０
）、（１）は小さな基板＜１）、（１０）の両側面から
突出する突出部（１０ａ）、（１ａ）を備えている。That is, in the embodiment shown in FIG. 5, the light receiving substrate (lO) is larger, and conversely, in the embodiment shown in FIG.
) are in a larger configuration, each of which has a larger substrate (10
), (1) are provided with protrusions (10a), (1a) protruding from both sides of the small substrate <1), (10).
この様な突出部（１０ａＬ （ｌａ）の存在により、モ
ールド体（９）と、感光領域（２）、支持基Ｆｉ（１）
及び受光基板（１０）を主体とする被モールド体との接
触面積の増大が図れ、強固なモールド構造が得られる。Due to the presence of such a protrusion (10aL (la)), the mold body (9), the photosensitive area (2), and the support base Fi (1)
Moreover, the contact area with the molded body mainly consisting of the light-receiving substrate (10) can be increased, and a strong mold structure can be obtained.
斯る突出長ｄの具体例としては、基板サイズにより大き
く変動するが０．１１１１１１〜１０ａ程度が適当であ
り、例えば第５図の構造に於いて、支持基板（１）とし
て６ ＋ｔｗｎ ｘ ６ ｍｍの正方形状のガラス基板
を用いた場合、Ｂ ｍｍ ｘ Ｂ ａの正方形状ガラス
基板から成る受光基板（１０）が使用に供せられ、従っ
てこの実施例に於ける突出長ｄは１ａｌ＋である。As a specific example of such protrusion length d, it varies greatly depending on the substrate size, but approximately 0.111111 to 10a is appropriate.For example, in the structure shown in FIG. When a square glass substrate of B mm x Ba is used, a light receiving substrate (10) made of a square glass substrate of B mm x Ba is used, and therefore the protrusion length d in this example is 1al+.
尚、上記内基板（１）（１０）の肉厚はともに０．４ｍ
であった。The thickness of the inner substrates (1) and (10) are both 0.4 m.
Met.
第７図は本発明を赤、緑及び青色の各色フィルタ（６Ｒ
）（６Ｇ）（６Ｂ＞を備えたフルカラーセンサに適用し
た実施例である。この構造は具体的には第４図と第５図
との混合タイプであり、支持基板（１）より受光基板（
１０）が大きく強固なモールド構造を提供すると共に、
内基板（１）（１０）の接着強度を増強ゼしめるのみな
らず、凹部（１２）により各色フィルタ（６Ｒ）（６Ｇ
＞（６Ｂ）の確実な位置決めを施すことができる。この
フルカラーセンサに於いて第２電極層（５）は各色を担
当する３つの感光領域（２Ｒ）（２Ｇ）（２Ｂ＞に共通
に連なり、共通電極を構成している。FIG. 7 shows the present invention using red, green and blue color filters (6R
) (6G) (6B>) This is an example applied to a full color sensor equipped with
10) provides a large and strong mold structure, and
Not only does it strengthen the adhesive strength of the inner substrates (1) and (10), but the concave portions (12) allow the use of each color filter (6R) (6G).
> (6B) reliable positioning can be performed. In this full-color sensor, the second electrode layer (5) is commonly connected to three photosensitive regions (2R) (2G) (2B>) responsible for each color, and constitutes a common electrode.
くべ）発明の効果
本発明は以との説明から明らかな如く、光学フィルタの
光入射面を透光性の受光基板で覆ったので、該光学フィ
ルタを支持基板と相俟って露出せしめることなく外気か
ら遮断せしめることができ、フィルタが傷付くことを防
止し得、仮に受光基板が傷付いたとしてもそれが光学フ
ィルタのフィルタの悪影響を供えるものではなく、無視
し得る程度の光散乱が発生するたけであり、従って光学
フィルタを透過する光は散逸せず、Ｓ／Ｎ比の劣化を抑
圧せしめることができる。しかも、光学フィルタを外気
から遮断せしめることができるので、機械的強度及び耐
湿性に欠ける安価な有機物質から成るフィルタを使用す
るにも拘らず高信頼性を実現することができる。更に本
発明を複数の感光領域を並置せしめた感光装置に適用し
た場合、クロストークを防止することができ、斯るクロ
ストークを王国とする誤識別を回避せしめることができ
る。As is clear from the description below, the present invention covers the light incident surface of the optical filter with a light-transmitting light-receiving substrate, so that the optical filter is not exposed together with the supporting substrate. It can be shielded from the outside air, preventing the filter from being damaged, and even if the light-receiving board is damaged, it will not have a negative effect on the optical filter, and only a negligible amount of light scattering will occur. Therefore, the light transmitted through the optical filter is not dissipated, and deterioration of the S/N ratio can be suppressed. Furthermore, since the optical filter can be shielded from the outside air, high reliability can be achieved despite the use of a filter made of an inexpensive organic material that lacks mechanical strength and moisture resistance. Furthermore, when the present invention is applied to a photosensitive device in which a plurality of photosensitive areas are arranged side by side, crosstalk can be prevented, and erroneous identification caused by such crosstalk can be avoided.
第１図は従′来例の断面図、第２図は他の従来例の断面
図、第３図は本発明の一実施例の断面図、第４図乃至第
７図は各々本発明の他の実施例断面図、を夫々示してい
る。
（１）・・・支持基板、（２）・・・感光領域、（４）
・・薄膜状光半導体層、
（６）・・・光学フィルタ、（１０）・・受光基板、（
１２〉・・・凹部。
第１図 。
第８図
を図
・旦
５図
６ ｔ。Fig. 1 is a sectional view of a conventional example, Fig. 2 is a sectional view of another conventional example, Fig. 3 is a sectional view of an embodiment of the present invention, and Figs. 4 to 7 are each a sectional view of an embodiment of the present invention. 3A and 3B show cross-sectional views of other embodiments, respectively. (1)...Supporting substrate, (2)...Photosensitive area, (4)
...Thin-film optical semiconductor layer, (6)...Optical filter, (10)...Light receiving substrate, (
12〉・・・Concavity. Figure 1. Figure 8 Figure 5 Figure 6 t.
Claims (1)
に支持する透光性の支持基板、該支持基板の他方の主面
に設けられ上記感光領域と対向する光学フィルタ、該光
学フィルタの光入射面を覆い受光面を形成する透光性の
受光基板、を備えたことを特徴とする感光装置。 （２）上記光学フィルタは有機物質から成ることを特徴
とする特許請求の範囲第１項記載の感光装置。 〈３）上記薄膜状光半導体層はアモルファス半導体を主
体とすることを特徴とする特許請求の範囲第１項若しく
は第２項記載の感光装置。 （４）、ｈ記光学フィルタは受光基板の凹部に埋設せし
められていることを特徴とする特許請求の範囲第１項乃
至第３順回れか記載の感光装置。 （５）上記支持基板と受光基板との大きさは相違するこ
とを特徴とする特許請求の範囲第１項乃至第４順回れか
記載の感光装置。[Scope of Claims] (1) A light-transmitting support substrate supporting a photosensitive region including an R film-like photosemiconductor layer on the main surface of the substrate, the photosensitive region provided on the other main surface of the supporting substrate; 1. A photosensitive device comprising: an optical filter facing the optical filter; and a light-transmitting light-receiving substrate that covers the light-incidence surface of the optical filter and forms a light-receiving surface. (2) The photosensitive device according to claim 1, wherein the optical filter is made of an organic material. (3) The photosensitive device according to claim 1 or 2, wherein the thin film photosemiconductor layer is mainly made of an amorphous semiconductor. (4) The photosensitive device according to any one of claims 1 to 3, wherein the optical filter (h) is embedded in a recessed portion of a light-receiving substrate. (5) The photosensitive device according to any one of claims 1 to 4, wherein the supporting substrate and the light receiving substrate are different in size.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58022534A JPH065760B2 (en) | 1983-02-14 | 1983-02-14 | Sensitive device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58022534A JPH065760B2 (en) | 1983-02-14 | 1983-02-14 | Sensitive device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59148372A true JPS59148372A (en) | 1984-08-25 |
| JPH065760B2 JPH065760B2 (en) | 1994-01-19 |
Family
ID=12085462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58022534A Expired - Lifetime JPH065760B2 (en) | 1983-02-14 | 1983-02-14 | Sensitive device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH065760B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4755666A (en) * | 1986-06-16 | 1988-07-05 | Sanyo Electric Co., Ltd. | Photosensor frame |
| JPH0351855U (en) * | 1989-09-26 | 1991-05-20 | ||
| JPH0385664U (en) * | 1989-12-22 | 1991-08-29 | ||
| US5912504A (en) * | 1986-07-16 | 1999-06-15 | Canon Kabushiki Kaisha | Semiconductor photo-sensor and method for manufacturing the same |
| JP2009200477A (en) * | 2008-01-22 | 2009-09-03 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method of manufacturing semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS538961U (en) * | 1976-07-07 | 1978-01-25 | ||
| JPS5822158U (en) * | 1981-08-06 | 1983-02-10 | ヤマハ株式会社 | badminton racket frame |
-
1983
- 1983-02-14 JP JP58022534A patent/JPH065760B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS538961U (en) * | 1976-07-07 | 1978-01-25 | ||
| JPS5822158U (en) * | 1981-08-06 | 1983-02-10 | ヤマハ株式会社 | badminton racket frame |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4755666A (en) * | 1986-06-16 | 1988-07-05 | Sanyo Electric Co., Ltd. | Photosensor frame |
| US5912504A (en) * | 1986-07-16 | 1999-06-15 | Canon Kabushiki Kaisha | Semiconductor photo-sensor and method for manufacturing the same |
| JPH0351855U (en) * | 1989-09-26 | 1991-05-20 | ||
| JPH0385664U (en) * | 1989-12-22 | 1991-08-29 | ||
| JP2009200477A (en) * | 2008-01-22 | 2009-09-03 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method of manufacturing semiconductor device |
| US8610152B2 (en) | 2008-01-22 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH065760B2 (en) | 1994-01-19 |
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