JPS61123288A - Solid-state pick up device - Google Patents
Solid-state pick up deviceInfo
- Publication number
- JPS61123288A JPS61123288A JP59244804A JP24480484A JPS61123288A JP S61123288 A JPS61123288 A JP S61123288A JP 59244804 A JP59244804 A JP 59244804A JP 24480484 A JP24480484 A JP 24480484A JP S61123288 A JPS61123288 A JP S61123288A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- chip
- state image
- image pick
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は固体撮像デバイスに関し、特にその感光面上
の構造を改良したものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a solid-state imaging device, and particularly to an improved structure on a photosensitive surface thereof.
従来、フォトダイオードアレイと電荷結合素子(COD
)を単一の半導体基板上に形成した固体撮像素子チップ
は、セラミック基板上に接着固定されている。このセラ
ミック基板は、パッケージ構造であシ、前記電荷結合素
子等の電極引出し用のパッドを有する。ここで、パッケ
ージ構造のセラミック基板の周辺には、透明なガラス基
板の縁部が配設され、前記固体撮像素子チップを密封す
る構造となりている。Traditionally, photodiode arrays and charge-coupled devices (CODs)
) formed on a single semiconductor substrate is adhesively fixed on a ceramic substrate. This ceramic substrate has a package structure and has pads for leading out electrodes of the charge coupled device and the like. Here, an edge of a transparent glass substrate is disposed around the ceramic substrate of the package structure, and the structure is such that the solid-state image sensor chip is hermetically sealed.
しかしながら、従来の固体撮像デバイスによると、前記
固体撮像素子チップと前記透明なガラス基板との間には
、適当を間隔があシ、これに起因する次のような問題が
あった。即ち、前記間隔のために光路長が長くなシ、ガ
ラス基板によって入射光が反射したり、チップ表面で反
射した光がガラス基板裏面で反射して戻ってくるためフ
レアが発生しやすい。また、固体撮像デバイスの外形寸
法も大きくなシ超小形の撮像デバイスを実現するのに不
向きである。However, in the conventional solid-state imaging device, there is a certain distance between the solid-state imaging element chip and the transparent glass substrate, which causes the following problems. That is, since the optical path length is long due to the above-mentioned spacing, flare is likely to occur because incident light is reflected by the glass substrate, and light reflected from the chip surface is reflected back from the back surface of the glass substrate. Furthermore, the external dimensions of the solid-state imaging device are large, making it unsuitable for realizing an ultra-small imaging device.
この発明は上記の事情に対処すべくなされたもので、フ
レアなどの光反射による障害を無くし得、また、超小形
のデバイスとするのに有効な固体撮像デバイスを提供す
ることを目的とする。The present invention has been made to address the above-mentioned circumstances, and an object of the present invention is to provide a solid-state imaging device that can eliminate obstacles caused by light reflection such as flare and is effective in making an ultra-small device.
この発明では、第1図に示すように、固体撮像素子チッ
プ11の感光面上に直接透明体18゜19を積層させる
とともに、該チップを密封する構造とすることで上記目
的を達成するものである。In the present invention, as shown in FIG. 1, the above object is achieved by laminating transparent bodies 18 and 19 directly on the photosensitive surface of the solid-state image sensor chip 11, and by sealing the chip. be.
以下、この発明の一実施例を図面を参照して説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第1図は、この発明の一実施例による固体撮像デバイス
の断面図である。11は、固体撮像素子チップであり、
例えば7オトダイオードアレイと電荷結合素子(COD
)によるレジスタを半導体基板に形成して構成されてい
る。この固体撮像素子チップ11は、平面的には、第2
図に示すように感光面領域11kを有し、周囲には、外
部接続のための電極となるポンディングパッド13が多
数配列されている。FIG. 1 is a sectional view of a solid-state imaging device according to an embodiment of the present invention. 11 is a solid-state image sensor chip;
For example, a 7-otodiode array and a charge-coupled device (COD)
) is formed on a semiconductor substrate. This solid-state image sensor chip 11 is, in plan view, a second
As shown in the figure, it has a photosensitive surface area 11k, around which a large number of bonding pads 13 serving as electrodes for external connection are arranged.
上記固体撮像素子チップ11は、パッケージ構造のセラ
ミック基板14の内部底面Z4Aに、接着剤15によっ
て接着固定される。セラミック基板14は、その周縁部
に、前記ポンディングパッド13に対応したポンディン
グパッド16を有する。そして、セラミック基板14@
のポンディングパッド16と、固体撮像素子チップ11
側の対応するポンディングパッド13は、アルミまたは
金等のボンディングワイヤ11により接続される。The solid-state image sensor chip 11 is adhesively fixed to the inner bottom surface Z4A of the ceramic substrate 14 having a package structure using an adhesive 15. The ceramic substrate 14 has a bonding pad 16 corresponding to the bonding pad 13 on its periphery. And ceramic substrate 14@
bonding pad 16 and solid-state image sensor chip 11
The corresponding bonding pads 13 on the sides are connected by bonding wires 11, such as aluminum or gold.
次に、この発明では、上記固体撮像素子チップ11の感
光面側に、透明な接着剤z8を介して透明なガラス基板
19が直接接着固定に、1積層され透明体とされる。こ
れによって、固体′d&像素子チップ11は、その表面
が外気に触れるのをしゃ断される。この状態において更
K。Next, in the present invention, a transparent glass substrate 19 is directly adhesively and fixedly laminated on the photosensitive surface side of the solid-state image sensor chip 11 via a transparent adhesive z8 to form a transparent body. As a result, the surface of the solid-state image element chip 11 is cut off from being exposed to the outside air. In this state, K.
固体撮像素子チップ11.ガラス基板19の周囲とセラ
ミック基板110間には、ボンディングワイヤ11の保
護、固体撮像索子チップ11の気密封止及び固定強化の
ために、樹脂20が充填される。Solid-state image sensor chip 11. A resin 20 is filled between the periphery of the glass substrate 19 and the ceramic substrate 110 in order to protect the bonding wires 11 and to hermetically seal and strengthen the fixation of the solid-state imaging probe chip 11.
尚、上記の説明では、透明体の代表例としてガラス基板
19を示したが、このガラス基板は邑フィルタ作用を有
するガラス基板であってもよい。また、通常固体撮像デ
バイスでは、光学系に赤外光カットフィルタを別に設け
ているが、前記透明体でこの作用を持たせても良く、こ
の場合は超小形のカメラを実現するのに一層有利である
。さらKまた、透明体は、光学的ローパスフィルタ作用
を有する水晶板であっても良い。In the above description, the glass substrate 19 was shown as a representative example of the transparent body, but this glass substrate may be a glass substrate having a filter effect. Furthermore, in solid-state imaging devices, an infrared light cut filter is usually provided separately in the optical system, but the transparent body may also have this effect, and in this case, it is more advantageous to realize an ultra-compact camera. It is. Furthermore, the transparent body may be a crystal plate having an optical low-pass filter effect.
以上説明したように、この発明によれば、固体撮像素子
チップの表面が直接外気に触れることがなく、外気の水
分等によって浸されるのを防止できる。これによル特性
の変化のない超小形のデバイスを提供できる。従来は、
固体撮像素子チップとガラス基板が離れておプ、パッケ
ージ全体の外縁でシーリングされていたため、形状が大
きくなり、その上、チップ表面とガラス基板裏面とで多
重反射が生じフレア発生の要因が大きかったが、このよ
うな問題が解消され、超小形、高性能のデバイスを実現
できる。さらにまた、とくKこの構成によると、透明基
板は、フレア発生等の心配がないことから、チップ表面
の保護の他に、色フィルタ特性、光学四−パスフィルタ
特性などを持たせることができ、従来別途設けられてい
た光学部品を一体構成できる。よりて余分なスペースが
不要となシ、カメラ全体を超小形化するのに有効である
。As described above, according to the present invention, the surface of the solid-state image sensor chip does not come into direct contact with the outside air, and can be prevented from being soaked with moisture or the like from the outside air. As a result, it is possible to provide an ultra-small device with no change in characteristics. conventionally,
The solid-state image sensor chip and the glass substrate were placed apart and sealed at the outer edge of the entire package, resulting in a large package size.In addition, multiple reflections occurred between the chip surface and the back surface of the glass substrate, which was a major cause of flare. However, these problems can be resolved and ultra-compact, high-performance devices can be realized. Furthermore, with this configuration, the transparent substrate does not have to worry about flare generation, so in addition to protecting the chip surface, it can also have color filter characteristics, optical four-pass filter characteristics, etc. Optical components that were conventionally provided separately can be integrated. This eliminates the need for extra space and is effective in making the entire camera ultra-small.
第1図はこの発明の一実施例を示す断面図、第2図は第
1図の固体撮像素子チップの平面図である。
11・・・固体撮像素子チップ、18・・・接着剤、1
9・・・ガラス基板、20・・・樹脂。
出願人代理人 弁理士 鈴 江 武 彦第1図
第2図FIG. 1 is a cross-sectional view showing one embodiment of the present invention, and FIG. 2 is a plan view of the solid-state image sensor chip shown in FIG. 11... Solid-state image sensor chip, 18... Adhesive, 1
9...Glass substrate, 20...Resin. Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 2
Claims (4)
感光面の保護機能を有した透明体を直接積層してなり、
該固体撮像素子チップの周囲が樹脂層で被覆されたこと
を特徴とする固体撮像デバイス。(1) A transparent body having at least the function of protecting the photosensitive surface is directly laminated on the photosensitive surface side of the solid-state image sensor chip,
A solid-state imaging device characterized in that the periphery of the solid-state imaging element chip is covered with a resin layer.
着剤と、この接着剤により接着されたガラス基板である
ことを特徴とする特許請求の範囲第1項記載の固体撮像
デバイス。(2) The solid-state imaging device according to claim 1, wherein the transparent body is a transparent adhesive applied to the photosensitive surface and a glass substrate bonded with the adhesive.
ィルタ特性を有することを特徴とする特許請求の範囲第
2項記載の固体撮像デバイス。(3) The solid-state imaging device according to claim 2, wherein the glass substrate has a color filter characteristic that cuts light of a specific color.
フィルタ作用を有する水晶板からなることを特徴とする
特許請求の範囲第1項記載の固体撮像デバイス。(4) The solid-state imaging device according to claim 1, wherein the transparent body is made of a transparent adhesive and a crystal plate having an optical low-pass filter effect.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59244804A JPS61123288A (en) | 1984-11-20 | 1984-11-20 | Solid-state pick up device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59244804A JPS61123288A (en) | 1984-11-20 | 1984-11-20 | Solid-state pick up device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61123288A true JPS61123288A (en) | 1986-06-11 |
Family
ID=17124186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59244804A Pending JPS61123288A (en) | 1984-11-20 | 1984-11-20 | Solid-state pick up device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61123288A (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6365783A (en) * | 1986-09-05 | 1988-03-24 | Olympus Optical Co Ltd | Solid-state image pickup device |
JPH02285672A (en) * | 1989-04-26 | 1990-11-22 | Toppan Printing Co Ltd | Solid-state image sensing device and its manufacture |
JPH05236361A (en) * | 1991-10-30 | 1993-09-10 | Philips Gloeilampenfab:Nv | Picture detector |
JPH08256296A (en) * | 1996-03-11 | 1996-10-01 | Sony Corp | Video camera |
JP2005086100A (en) * | 2003-09-10 | 2005-03-31 | Fuji Photo Film Co Ltd | Solid state imaging apparatus |
JP2007505517A (en) * | 2003-09-08 | 2007-03-08 | コニンクリユケ フィリップス エレクトロニクス エヌ.ブイ. | Body and electronic device |
US7417221B2 (en) * | 2005-09-08 | 2008-08-26 | Gentex Corporation | Automotive vehicle image sensor |
US7598611B2 (en) | 2007-08-15 | 2009-10-06 | Panasonic Corporation | Semiconductor device with side terminals |
US20100193240A1 (en) * | 2009-02-04 | 2010-08-05 | Yoshiki Takayama | Device |
US7928547B2 (en) | 2008-01-23 | 2011-04-19 | Panasonic Corporation | Optical semiconductor device |
US7973323B2 (en) | 2007-12-07 | 2011-07-05 | Panasonic Corporation | Semiconductor device and manufacturing method thereof, and camera module including the same |
CN103119510A (en) * | 2010-04-01 | 2013-05-22 | 康蒂特米克微电子有限公司 | Device comprising an optical module and support plate |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55159678A (en) * | 1979-05-31 | 1980-12-11 | Toshiba Corp | Solidstate image sensor |
JPS5814679A (en) * | 1981-07-20 | 1983-01-27 | Hitachi Ltd | Solid state image pickup device |
-
1984
- 1984-11-20 JP JP59244804A patent/JPS61123288A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55159678A (en) * | 1979-05-31 | 1980-12-11 | Toshiba Corp | Solidstate image sensor |
JPS5814679A (en) * | 1981-07-20 | 1983-01-27 | Hitachi Ltd | Solid state image pickup device |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6365783A (en) * | 1986-09-05 | 1988-03-24 | Olympus Optical Co Ltd | Solid-state image pickup device |
JPH02285672A (en) * | 1989-04-26 | 1990-11-22 | Toppan Printing Co Ltd | Solid-state image sensing device and its manufacture |
JPH05236361A (en) * | 1991-10-30 | 1993-09-10 | Philips Gloeilampenfab:Nv | Picture detector |
JPH08256296A (en) * | 1996-03-11 | 1996-10-01 | Sony Corp | Video camera |
JP2007505517A (en) * | 2003-09-08 | 2007-03-08 | コニンクリユケ フィリップス エレクトロニクス エヌ.ブイ. | Body and electronic device |
JP2005086100A (en) * | 2003-09-10 | 2005-03-31 | Fuji Photo Film Co Ltd | Solid state imaging apparatus |
US7417221B2 (en) * | 2005-09-08 | 2008-08-26 | Gentex Corporation | Automotive vehicle image sensor |
US7598611B2 (en) | 2007-08-15 | 2009-10-06 | Panasonic Corporation | Semiconductor device with side terminals |
US8227814B2 (en) | 2007-12-07 | 2012-07-24 | Panasonic Corporation | Semiconductor device and manufacturing method thereof, and camera module including the same |
US7973323B2 (en) | 2007-12-07 | 2011-07-05 | Panasonic Corporation | Semiconductor device and manufacturing method thereof, and camera module including the same |
US7928547B2 (en) | 2008-01-23 | 2011-04-19 | Panasonic Corporation | Optical semiconductor device |
US8110755B2 (en) | 2009-02-04 | 2012-02-07 | Panasonic Corporation | Package for an optical device |
US20100193240A1 (en) * | 2009-02-04 | 2010-08-05 | Yoshiki Takayama | Device |
CN103119510A (en) * | 2010-04-01 | 2013-05-22 | 康蒂特米克微电子有限公司 | Device comprising an optical module and support plate |
JP2013524702A (en) * | 2010-04-01 | 2013-06-17 | コンティ テミック マイクロエレクトロニック ゲゼルシャフト ミット ベシュレンクテル ハフツング | Device with optical module and support plate |
US9025061B2 (en) | 2010-04-01 | 2015-05-05 | Conti Temic Microelectronic Gmbh | Device having an optical module and a supporting plate |
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