JP2005086100A - Solid state imaging apparatus - Google Patents

Solid state imaging apparatus Download PDF

Info

Publication number
JP2005086100A
JP2005086100A JP2003318645A JP2003318645A JP2005086100A JP 2005086100 A JP2005086100 A JP 2005086100A JP 2003318645 A JP2003318645 A JP 2003318645A JP 2003318645 A JP2003318645 A JP 2003318645A JP 2005086100 A JP2005086100 A JP 2005086100A
Authority
JP
Japan
Prior art keywords
holding member
metal film
state imaging
solid
bare chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003318645A
Other languages
Japanese (ja)
Inventor
Mamoru Miyashita
守 宮下
Hiroshi Tamayama
宏 玉山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP2003318645A priority Critical patent/JP2005086100A/en
Publication of JP2005086100A publication Critical patent/JP2005086100A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To perform an electromagnetic shield without enlarging an outline size of the solid state imaging apparatus. <P>SOLUTION: The solid state imaging apparatus 2 includes a bare chip 10 in which a light-receiving portion 11 is formed, a holding member 20 to hold the bare chip 10, a cover glass 30 fitted to the holding member 20 so that it may be confronted with a surface on which the light-receiving portion 11 of the bare chip 10 is formed, and a printed-circuit board 40 to mount the holding member 20. On the holding member 20, a metal film 21 grounded on its surface is formed. Furthermore, when a surface on which the light-receiving portion of the bare chip is not formed is exposed from an opening formed on the printed-circuit board, a metal layer grounded so that the opening and a surface of the printed-circuit board may be covered is provided. In addition, a translucent metal film with conductivity and translucency is formed on a surface of the cover glass, and the translucent metal film may be electrically connected to the metal film of the holding member. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、ＣＣＤ等のベアチップがセラミック等のパッケージに搭載された固体撮像装置に関するものである。   The present invention relates to a solid-state imaging device in which a bare chip such as a CCD is mounted on a package such as a ceramic.

ＣＣＤやＣＭＯＳセンサ等の固体撮像素子を使用したデジタルカメラやビデオカメラが普及している。また、パーソナルコンピュータや携帯電話、電子手帳等の電子機器に、この固体撮像素子とメモリとを組み込み、撮影機能を付加することも行なわれている。   Digital cameras and video cameras that use solid-state image sensors such as CCDs and CMOS sensors are in widespread use. In addition, a solid-state imaging device and a memory are incorporated in an electronic device such as a personal computer, a mobile phone, or an electronic notebook, and a photographing function is added.

このような固体撮像素子は、半導体ウェハプロセスによって製造された後、ダイシングによって方形のベアチップの状態とされる。このベアチップ状の固体撮像素子は、シリコンからなる半導体基板上に形成された複数の受光素子からなる受光部と、複数の電極（ボンディングパッド）とを備える。この受光部は保護されていない状態であるので、受光部に塵芥や汚れが付着すると故障の原因となる。このため、従来の固体撮像装置は、例えばセラミックで形成されたパッケージにベアチップ状の固体撮像素子が搭載され、固体撮像素子のボンディングパッドとパッケージが備える外部端子（リード）との間がボンディングワイヤーによって結線されてなる。また、このパッケージは受光部と対向する面が開口されており、この開口を覆うようにパッケージにカバーガラスが取り付けられている。   Such a solid-state image sensor is manufactured by a semiconductor wafer process and then is made into a square bare chip state by dicing. This bare chip-shaped solid-state imaging device includes a light receiving portion formed of a plurality of light receiving elements formed on a semiconductor substrate made of silicon, and a plurality of electrodes (bonding pads). Since this light receiving part is not protected, if dust or dirt adheres to the light receiving part, it may cause a failure. For this reason, in the conventional solid-state imaging device, for example, a bare chip-shaped solid-state imaging device is mounted on a package formed of ceramic, and a bonding wire between the bonding pad of the solid-state imaging device and an external terminal (lead) included in the package It is connected. In addition, the surface of the package facing the light receiving portion is opened, and a cover glass is attached to the package so as to cover the opening.

しかし、このようなセラミック製のパッケージでは、導電性がないため電磁シールドの効果はなく、固体撮像素子が放射するパッケージ内部からの電磁放射ノイズや、パッケージ外部からの電磁放射ノイズを遮蔽（電磁シールド）することができない。このため、固体撮像素子の電磁放射ノイズが他の素子に影響を与えたり、他の素子の電磁放射ノイズによって固体撮像素子が影響を受けたりすることがある。そこで、この電磁放射ノイズを遮蔽するために、固体撮像素子を搭載したセラミック製のパッケージ全体を箱形状の金属製フレームに収納した固体撮像装置が提案されている（例えば、特許文献１参照）。   However, such a ceramic package has no electrical conductivity, so there is no electromagnetic shielding effect. It shields electromagnetic radiation noise from the inside of the package radiated by the solid-state image sensor and electromagnetic radiation noise from the outside of the package (electromagnetic shielding). )Can not do it. For this reason, the electromagnetic radiation noise of the solid-state image sensor may affect other elements, or the solid-state image sensor may be affected by the electromagnetic radiation noise of other elements. Therefore, in order to shield the electromagnetic radiation noise, a solid-state imaging device in which the entire ceramic package on which the solid-state imaging device is mounted is housed in a box-shaped metal frame has been proposed (for example, see Patent Document 1).

特開平５−５６９１６号公報JP-A-5-56916

しかしながら、電磁シールドのために金属製フレームを使用した上記固体撮像装置では、固体撮像装置全体の外形サイズが大きくなってしまい、携帯電話等の小型電子機器に組み込むには不利な大きさとなる。また、本固体撮像装置の生産コストの増加を招くこととなる。   However, in the solid-state imaging device using a metal frame for electromagnetic shielding, the overall size of the solid-state imaging device becomes large, which is disadvantageous for incorporation into a small electronic device such as a mobile phone. In addition, the production cost of the solid-state imaging device is increased.

本発明は、上記問題点を解決するためのもので、装置の外形サイズを大きくせずに電磁シールドを行うことが可能な固体撮像装置を提供することを目的とする。   An object of the present invention is to provide a solid-state imaging device capable of performing electromagnetic shielding without increasing the external size of the device.

上記目的を達成するために、本発明に固体撮像装置は、受光部が形成されたベアチップと、このベアチップを保持する保持部材と、前記ベアチップの受光部が形成された面に対向するように前記保持部材に取り付けられた透光性部材と、前記保持部材を実装する実装基板とを備えた固体撮像装置において、前記保持部材は、その表面に接地された金属膜が形成されていることを特徴とするものである。   In order to achieve the above object, the solid-state imaging device according to the present invention includes a bare chip in which a light receiving portion is formed, a holding member that holds the bare chip, and a surface on which the light receiving portion of the bare chip is formed. In a solid-state imaging device including a translucent member attached to a holding member and a mounting substrate on which the holding member is mounted, the holding member has a grounded metal film formed on a surface thereof. It is what.

なお、前記実装基板は、前記ベアチップの受光部が形成されていない面を露出する開口を備え、この開口及び実装基板の表面を覆う接地された金属層が設けられていることが好ましい。   The mounting board preferably includes an opening exposing a surface of the bare chip where the light receiving portion is not formed, and a grounded metal layer is provided to cover the opening and the surface of the mounting board.

また、前記透光性部材は、その表面に導電性及び透光性を有する透光性金属膜が形成され、この透光性金属膜は、保持部材表面の前記金属膜に電気的に接続されていることが好ましい。   The translucent member has a translucent metal film having conductivity and translucency formed on the surface thereof, and the translucent metal film is electrically connected to the metal film on the surface of the holding member. It is preferable.

また、前記透明金属膜と保持部材表面の前記金属膜とは、導電性の接着剤によって接続されていることが好ましい。   The transparent metal film and the metal film on the surface of the holding member are preferably connected by a conductive adhesive.

本発明の固体撮像装置は、受光部が形成されたベアチップと、このベアチップを保持する保持部材と、前記ベアチップの受光部が形成された面に対向するように前記保持部材に取り付けられた透光性部材と、前記保持部材を実装する実装基板とを備えた固体撮像装置において、前記保持部材は、その表面に接地された金属膜が形成されているので、装置の外形サイズを大きくせずにベアチップを電磁シールドすることができる。また、この金属膜は容易に形成できるので、本固体撮像装置の生産性が向上する。   The solid-state imaging device according to the present invention includes a bare chip in which a light receiving portion is formed, a holding member that holds the bare chip, and a light transmitting member that is attached to the holding member so as to face the surface on which the light receiving portion of the bare chip is formed. In the solid-state imaging device including a conductive member and a mounting substrate on which the holding member is mounted, the holding member has a grounded metal film formed on the surface thereof, so that the external size of the device is not increased. The bare chip can be electromagnetically shielded. In addition, since the metal film can be easily formed, the productivity of the solid-state imaging device is improved.

また、前記実装基板が前記ベアチップの受光部が形成されていない面を露出する開口を備えるとき、この開口及び実装基板の表面を覆うように接地された金属層が設けられていると、ベアチップの裏面側が効果的に電磁シールドされる。   In addition, when the mounting substrate has an opening exposing a surface of the bare chip where the light receiving portion is not formed, a grounded metal layer is provided so as to cover the opening and the surface of the mounting substrate. The back side is effectively electromagnetically shielded.

また、前記透光性部材の表面に導電性及び透光性を有する透光性金属膜が形成され、この透光性金属膜が保持部材表面の前記金属膜に電気的に接続されていると、ベアチップの受光面側が効果的に電磁シールドされる。   Further, a translucent metal film having conductivity and translucency is formed on the surface of the translucent member, and the translucent metal film is electrically connected to the metal film on the surface of the holding member. The light receiving surface side of the bare chip is effectively electromagnetically shielded.

図１〜図４に示すように、本発明を実施した固体撮像装置２は、ベアチップ１０と、ベアチップ１０を搭載（マウント）して保持する保持部材（パッケージ）２０と、保持部材２０の開口部２０ａを被覆するカバーガラス３０と、保持部材２０を実装する実装基板４０とを備える。   As shown in FIGS. 1 to 4, the solid-state imaging device 2 embodying the present invention includes a bare chip 10, a holding member (package) 20 that mounts and holds the bare chip 10, and an opening of the holding member 20. A cover glass 30 covering 20a and a mounting substrate 40 on which the holding member 20 is mounted are provided.

ベアチップ１０は、シリコン半導体からなるＣＣＤ等の固体撮像素子である。ベアチップ１０には、照射された光を電気信号に変換する受光素子１１ａが複数個配列された受光部１１が形成されており、外部と信号の入出力を行うための複数の電極（ボンディングパッド）１２がベアチップ１０表面の縁辺付近に形成されている。   The bare chip 10 is a solid-state imaging device such as a CCD made of a silicon semiconductor. The bare chip 10 is formed with a light receiving portion 11 in which a plurality of light receiving elements 11a for converting irradiated light into electric signals are arranged, and a plurality of electrodes (bonding pads) for inputting / outputting signals to / from the outside. 12 is formed near the edge of the bare chip 10 surface.

保持部材２０は、開口部２０ａを有する箱形状であって、図４に示すように内周側面２０ｂ、内底面２０ｃ、外周側面２０ｄ、外底面２０ｅ、及び上端面２０ｆを備える。保持部材２０は、例えばセラミックで形成されており、その外周側面２０ｄ全体、外底面２０ｅの外周側面２０ｄに連なる一部分、及び上端面２０ｆの外周側面１０ｄに連なる一部分は、銅などからなる導電性を有する金属膜２１によって覆われている。この金属膜２１は、金属めっき処理などによって容易に形成されるものである。   The holding member 20 has a box shape having an opening 20a, and includes an inner peripheral side surface 20b, an inner bottom surface 20c, an outer peripheral side surface 20d, an outer bottom surface 20e, and an upper end surface 20f as shown in FIG. The holding member 20 is made of, for example, ceramic, and the entire outer peripheral side surface 20d, a portion connected to the outer peripheral side surface 20d of the outer bottom surface 20e, and a portion connected to the outer peripheral side surface 10d of the upper end surface 20f have conductivity made of copper or the like. The metal film 21 is covered. The metal film 21 is easily formed by a metal plating process or the like.

また、保持部材２０には、内底面２０ｃから外底面２０ｅに貫通するように複数のスルーホール２０ｇが形成されており、各スルーホール２０ｇには銅合金などからなる導電性を有する外部端子（リード）２２が貫入されている。このリード２２の一端は保持部材２０の内底面２０ｃから露出しており、他端は保持部材２０の外底面２０ｅから突出して外底面２０ｅに沿って内側に折り曲げられ、リード２２はＬ字形となっている。   The holding member 20 is formed with a plurality of through holes 20g penetrating from the inner bottom surface 20c to the outer bottom surface 20e, and each through hole 20g has a conductive external terminal (lead) made of a copper alloy or the like. ) 22 is inserted. One end of the lead 22 is exposed from the inner bottom surface 20c of the holding member 20, and the other end protrudes from the outer bottom surface 20e of the holding member 20 and is bent inward along the outer bottom surface 20e. The lead 22 is L-shaped. ing.

ベアチップ１０は、その裏面（受光部１１が形成されていない面）が保持部材２０の内底面２０ｃに固着（保持）され、各ボンディングパッド１２とリード２２は、金などの金属細線からなるボンディングワイヤー１３によって結線されている。さらに、保持部材２０の外底面２０ｅの一部分を覆う金属膜２１の表面には半田層２３ｂが形成されており、保持部材１０の外底面１０ｅに沿って折り曲げられたリード２２の表面には半田層２３ａが形成されている。   The back surface of the bare chip 10 (the surface on which the light receiving portion 11 is not formed) is fixed (held) to the inner bottom surface 20c of the holding member 20, and the bonding pads 12 and the leads 22 are bonding wires made of fine metal wires such as gold. 13 is connected. Further, a solder layer 23b is formed on the surface of the metal film 21 covering a part of the outer bottom surface 20e of the holding member 20, and a solder layer is formed on the surface of the lead 22 bent along the outer bottom surface 10e of the holding member 10. 23a is formed.

カバーガラス３０は、ガラス材などの透光性部材であり、ベアチップ１０の受光面（受光部１１が形成された面）に対向して、開口部２０ａを覆うようにその周縁部が保持部材２０の上端面２０ｆに固着されている。カバーガラス３０はベアチップ１０を塵芥などから保護するとともに、固体撮像装置２の上方から照射された光を透過させる。   The cover glass 30 is a translucent member such as a glass material, and the peripheral portion of the cover glass 30 faces the light receiving surface (the surface on which the light receiving unit 11 is formed) of the bare chip 10 so as to cover the opening 20a. Is fixed to the upper end surface 20f. The cover glass 30 protects the bare chip 10 from dust and the like, and transmits light irradiated from above the solid-state imaging device 2.

実装基板４０は、保持部材２０を表面実装により固設し、保持部材２０にマウントされたベアチップ１０を電気的に接続する。実装基板４０の表面には、フットパターン４１ａ及びシールドパターン４１ｂからなる導電部が形成されており、他の部分は絶縁されている。フットパターン４１ａは、半田層２３ａを介してリード２２に接続され、シールドパターン４１ｂは、半田層２３ｂを介して金属膜２１に接続される。なお、フットパターン４１ａは、図示しない信号処理部に電気的に接続されており、この信号処理部は、ベアチップ１０の受光部１１から送られた画像情報信号としての電気信号の処理を行う。また、詳しく図示しないが、シールドパターン４１ｂは接地されてグランド電位となっており、金属膜２１を同電位（グランド電位）にする。   The mounting substrate 40 has the holding member 20 fixed by surface mounting and electrically connects the bare chip 10 mounted on the holding member 20. On the surface of the mounting substrate 40, a conductive portion composed of a foot pattern 41a and a shield pattern 41b is formed, and the other portions are insulated. The foot pattern 41a is connected to the lead 22 via the solder layer 23a, and the shield pattern 41b is connected to the metal film 21 via the solder layer 23b. The foot pattern 41a is electrically connected to a signal processing unit (not shown), and this signal processing unit processes an electrical signal as an image information signal sent from the light receiving unit 11 of the bare chip 10. Although not shown in detail, the shield pattern 41b is grounded and has a ground potential, and the metal film 21 is set to the same potential (ground potential).

以上のように構成された固体撮像装置２では、実装基板４０に実装された保持部材２０の露出面（外周側面２０ｄ及びそれに連なる上端面２０ｆの一部分）がグランド電位の金属膜２１で覆われているため、保持部材２０に電磁シールド効果が付与される。これにより、ベアチップ１０の側方を取り囲むように電磁シールドされる。   In the solid-state imaging device 2 configured as described above, the exposed surface of the holding member 20 mounted on the mounting substrate 40 (the outer peripheral side surface 20d and a part of the upper end surface 20f connected thereto) is covered with the metal film 21 with the ground potential. Therefore, an electromagnetic shielding effect is imparted to the holding member 20. Thereby, electromagnetic shielding is performed so as to surround the side of the bare chip 10.

図５は、本発明の第１の変形例である固体撮像装置３を示す。固体撮像装置３のカバーガラス３０の下面（ベアチップ１０の受光面に対向する面）には、導電性及び透光性を有する透光性金属膜３１が形成されている。この透光性金属膜３１は、例えばハーフミラーの材料として用いられているＴｉ，Ｃｕ，ステンレス，Ａｌ等を蒸着することよって形成される。なお、透光性金属膜３１の膜厚は、光の透過率が最適となるように所定の厚さとされている。   FIG. 5 shows a solid-state imaging device 3 which is a first modification of the present invention. A translucent metal film 31 having conductivity and translucency is formed on the lower surface of the cover glass 30 of the solid-state imaging device 3 (the surface facing the light receiving surface of the bare chip 10). The translucent metal film 31 is formed by evaporating Ti, Cu, stainless steel, Al, or the like used as a half mirror material, for example. The film thickness of the translucent metal film 31 is set to a predetermined thickness so that the light transmittance is optimized.

保持部材５０は、上記保持部材２０と同様な開口部５０ａを有する箱形状であって、内周側面５０ｂ、内底面５０ｃ、外周側面２０ｄ、外底面５０ｅ、及び上端面５０ｆを備え、さらに上端面５０ｆには溝状の凹部５０ｈが形成されている。保持部材５０は、同様に例えばセラミックで形成されており、その外周側面５０ｄ全体、外底面５０ｅの外周側面５０ｄに連なる一部分、及び上端面５０ｆの外周側面５０ｄに連なる一部分は、銅などからなる導電性を有する金属膜５１によって覆われている。   The holding member 50 has a box shape having an opening 50a similar to the holding member 20, and includes an inner peripheral side surface 50b, an inner bottom surface 50c, an outer peripheral side surface 20d, an outer bottom surface 50e, and an upper end surface 50f, and further has an upper end surface. A groove-like recess 50h is formed in 50f. Similarly, the holding member 50 is made of, for example, ceramic, and the entire outer peripheral side surface 50d, a portion connected to the outer peripheral side surface 50d of the outer bottom surface 50e, and a portion connected to the outer peripheral side surface 50d of the upper end surface 50f are conductive made of copper or the like. It is covered with the metal film 51 which has property.

凹部５０ｈは、カバーガラス３０の外周を取り囲むように形成され、凹部５０ｈには導電性の接着材５４が充填されている。この凹部５０ｈによって、接着材５４は、上記の金属膜５１と透光性金属膜３１とを隙間なく完全に接続するとともに、それらを電気的に接続し、透光性金属膜３１をグランド電位とする。なお、この接着材５４の代わりに導電性ゴムを凹部５０ｈに嵌め込むようにしてもよい。   The recess 50 h is formed so as to surround the outer periphery of the cover glass 30, and the recess 50 h is filled with a conductive adhesive 54. Due to the recess 50h, the adhesive 54 completely connects the metal film 51 and the translucent metal film 31 with no gap, and electrically connects them so that the translucent metal film 31 is connected to the ground potential. To do. In place of the adhesive 54, conductive rubber may be fitted into the recess 50h.

固体撮像装置３のその他の部分については上記固体撮像装置２と同様であるので同一符号を付し、その説明を省略する。この固体撮像装置３では、カバーガラス３０にも電磁シールド効果が付与されるので、ベアチップ１０の受光面側が効果的に電磁シールドされる。   The other parts of the solid-state image pickup device 3 are the same as those of the solid-state image pickup device 2 and are therefore denoted by the same reference numerals and description thereof is omitted. In this solid-state imaging device 3, since the electromagnetic shielding effect is imparted also to the cover glass 30, the light receiving surface side of the bare chip 10 is effectively electromagnetically shielded.

次に、図６は、本発明の第２の変形例である固体撮像装置４を示す。保持部材６０は、中空部６０ａを有する中空の部材であって、内周側面６０ｂ、底面６０ｃ、外周側面６０ｄ、及び上面６０ｅを備える。保持部材６０は、同様に例えばセラミックで形成されており、その外周側面６０ｄ全体、底面６０ｃの外周側面６０ｄに連なる一部分、上端面６０ｅの外周側面６０ｄに連なる一部分は、銅などからなる導電性を有する金属膜６１によって覆われている。なお、中空部６０ａは、その開口の大きさがベアチップ１０全体の面積より小さく、受光部１１の面積より大きくなるように形成されている。   Next, FIG. 6 shows a solid-state imaging device 4 which is a second modification of the present invention. The holding member 60 is a hollow member having a hollow portion 60a, and includes an inner peripheral side surface 60b, a bottom surface 60c, an outer peripheral side surface 60d, and an upper surface 60e. Similarly, the holding member 60 is made of, for example, ceramic, and the entire outer peripheral side surface 60d, a portion connected to the outer peripheral side surface 60d of the bottom surface 60c, and a portion connected to the outer peripheral side surface 60d of the upper end surface 60e have conductivity made of copper or the like. The metal film 61 is covered. The hollow portion 60a is formed so that the size of the opening is smaller than the entire area of the bare chip 10 and larger than the area of the light receiving portion 11.

また、保持部材６０の底面６０ｃには、銅合金などからなる導電性を有する外部端子（リード）６２が設けられている。このリード６２の中空部６０ａ側の一端の表面には半田層６３ｃが形成されており、他端の表面には半田層６３ａが形成されている。さらに、保持部材６０の底面６０ｃの一部分を覆う金属膜６１の表面には半田層６３ｂが形成されている。   In addition, a conductive external terminal (lead) 62 made of a copper alloy or the like is provided on the bottom surface 60 c of the holding member 60. A solder layer 63c is formed on the surface of one end of the lead 62 on the hollow portion 60a side, and a solder layer 63a is formed on the surface of the other end. Further, a solder layer 63 b is formed on the surface of the metal film 61 that covers a part of the bottom surface 60 c of the holding member 60.

ベアチップ１０の表面には、前述のボンディングパッド１２に代わって粒状の突起電極（バンプ）１４が形成されている。このバンプ１４が半田層６３ｃを介してリード６２に接続されることにより、ベアチップ１０は保持部材６０に固着（保持）される。また、カバーガラス７０は、ガラス材などの透光性部材によって形成されており、中空部６０ａの開口を覆うようにその周縁部が保持部材６０の上面６０ｅに固着されている。   On the surface of the bare chip 10, granular protruding electrodes (bumps) 14 are formed instead of the bonding pads 12 described above. The bare chip 10 is fixed (held) to the holding member 60 by connecting the bumps 14 to the leads 62 via the solder layer 63c. The cover glass 70 is formed of a light-transmitting member such as a glass material, and the peripheral edge thereof is fixed to the upper surface 60e of the holding member 60 so as to cover the opening of the hollow portion 60a.

実装基板８０は、ベアチップ１０全体の面積より大きく開口された中空部８０ａが形成されている。実装基板８０の表面には、フットパターン８１ａ及びシールドパターン８１ｂからなる導電部が形成されており、他の部分は絶縁されている。フットパターン８１ａは、半田層６３ａを介してリード６２に接続され、シールドパターン８１ｂは、半田層６３ｂを介して金属膜６１に接続される。保持部材６０は、ベアチップ１０が中空部８０ａに収納されるように実装基板８０に実装され、ベアチップ１０は実装基板８０の裏面側に露出する。なお、金属膜６１は、接地されたシールドパターン８１ｂによってグランド電位とされる。   The mounting substrate 80 is formed with a hollow portion 80a that is opened larger than the entire area of the bare chip 10. On the surface of the mounting substrate 80, a conductive portion composed of a foot pattern 81a and a shield pattern 81b is formed, and the other portions are insulated. The foot pattern 81a is connected to the lead 62 through the solder layer 63a, and the shield pattern 81b is connected to the metal film 61 through the solder layer 63b. The holding member 60 is mounted on the mounting substrate 80 so that the bare chip 10 is accommodated in the hollow portion 80 a, and the bare chip 10 is exposed on the back surface side of the mounting substrate 80. The metal film 61 is set to the ground potential by the grounded shield pattern 81b.

そして、実装基板８０の裏面（実装面と反対の面）及びこの裏面側の中空部８０ａ開口を覆うように、フレキシブルプリント配線板（ＦＰＣ）８２が貼付されている。このＦＰＣ８２の裏面には、金属層８２ａが形成され、金属層８２ａは接地されてグランド電位となっている。   And the flexible printed wiring board (FPC) 82 is affixed so that the back surface (surface opposite to a mounting surface) of the mounting substrate 80 and the hollow part 80a opening of this back surface side may be covered. A metal layer 82a is formed on the back surface of the FPC 82, and the metal layer 82a is grounded and has a ground potential.

以上のように構成された固体撮像装置４は、上記固体撮像装置２と比べて薄く、コンパクトになるという利点がある。この固体撮像装置４では、基板７０に実装された保持部材６０の露出面（外周側面６０ｄ及びそれに連なる上端面６０ｅの一部分）に電磁シールド効果が付与され、ベアチップ１０の側方向が電磁シールドされるとともに、基板７０の裏面側全体に電磁シールド効果が付与されるので、ベアチップ１０の裏面側が効果的に電磁シールドされる。   The solid-state imaging device 4 configured as described above has an advantage that it is thinner and more compact than the solid-state imaging device 2. In the solid-state imaging device 4, an electromagnetic shielding effect is imparted to the exposed surface of the holding member 60 mounted on the substrate 70 (the outer peripheral side surface 60 d and a part of the upper end surface 60 e connected thereto), and the lateral direction of the bare chip 10 is electromagnetically shielded. At the same time, since the electromagnetic shielding effect is imparted to the entire back surface side of the substrate 70, the back surface side of the bare chip 10 is effectively electromagnetically shielded.

図７は、本発明の第３の変形例である固体撮像装置５を示す。固体撮像装置５のカバーガラス（透光性部材）７０の下面（ベアチップ１０の受光面に対向する面）には、導電性及び透光性を有する透光性金属膜７１が形成されている。この透光性金属膜７１は、例えばハーフミラーの材料として用いられているＴｉ，Ｃｕ，ステンレス，Ａｌ等を蒸着することよって形成される。なお、透光性金属膜７１の膜厚は、光の透過率が最適となるように所定の厚さとされている。   FIG. 7 shows a solid-state imaging device 5 which is a third modification of the present invention. On the lower surface of the cover glass (translucent member) 70 of the solid-state imaging device 5 (the surface facing the light receiving surface of the bare chip 10), a translucent metal film 71 having conductivity and translucency is formed. The translucent metal film 71 is formed by evaporating Ti, Cu, stainless steel, Al or the like used as a half mirror material. The film thickness of the translucent metal film 71 is set to a predetermined thickness so that the light transmittance is optimized.

保持部材９０は、上記保持部材６０と同様な中空部９０ａを有する中空の部材であって、内周側面９０ｂ、底面９０ｃ、外周側面９０ｄ、及び上面９０ｅを備え、さらに上面９０ｅには溝状の凹部９０ｆが形成されている。保持部材９０は、同様に例えばセラミックで形成されており、その外周側面９０ｄ全体、底面９０ｃの外周側面９０ｄに連なる一部分、上端面９０ｅの外周側面６０ｄに連なる一部分は、銅などからなる導電性を有する金属膜９１によって覆われている。   The holding member 90 is a hollow member having a hollow portion 90a similar to the holding member 60, and includes an inner peripheral side surface 90b, a bottom surface 90c, an outer peripheral side surface 90d, and an upper surface 90e, and the upper surface 90e has a groove shape. A recess 90f is formed. Similarly, the holding member 90 is made of, for example, ceramic. The entire outer peripheral side surface 90d, a part connected to the outer peripheral side surface 90d of the bottom surface 90c, and a part connected to the outer peripheral side surface 60d of the upper end surface 90e have conductivity made of copper or the like. The metal film 91 is covered.

凹部９０ｆは、カバーガラス７０の外周を取り囲むように形成され、凹部９０ｆには導電性の接着材９４が充填されている。この凹部９０ｆによって、接着材９４は、上記の金属膜９１と透光性金属膜７１とを隙間なく完全に密着させて接着するとともに、それらを電気的に接続し、透光性金属膜９１をグランド電位とする。なお、この接着材９４の代わりに導電性ゴムを凹部９０ｆに嵌め込むようにしてもよい。     The recess 90f is formed so as to surround the outer periphery of the cover glass 70, and the recess 90f is filled with a conductive adhesive 94. Due to the recesses 90f, the adhesive 94 adheres the metal film 91 and the translucent metal film 71 in close contact with each other without gaps, and electrically connects them so that the translucent metal film 91 is attached. Set to ground potential. In place of the adhesive 94, conductive rubber may be fitted into the recess 90f.

固体撮像装置５のその他の部分については上記固体撮像装置４と同様であるので同一符号を付し、その説明を省略する。この固体撮像装置５では、カバーガラス７０にも電磁シールド効果が付与されるので、ベアチップ１０の受光面側が効果的に電磁シールドされる。   The other parts of the solid-state image pickup device 5 are the same as those of the solid-state image pickup device 4 and are therefore denoted by the same reference numerals, and the description thereof is omitted. In this solid-state imaging device 5, since the electromagnetic shielding effect is imparted also to the cover glass 70, the light receiving surface side of the bare chip 10 is effectively electromagnetically shielded.

なお、上記実施形態では、保持部材を箱形状や中空形状としたが、これに限られるものではなく、本発明の要旨を変更しない範囲で変形することができる。   In the above embodiment, the holding member has a box shape or a hollow shape. However, the holding member is not limited to this and can be modified without changing the gist of the present invention.

また、上記実施形態では、保持部材の表面のうち少なくとも外周側面を覆うように金属膜を形成したが、これに限られるものではなく、例えば保持部材の内周側面を覆うように金属膜を形成してもよい。   Moreover, in the said embodiment, although the metal film was formed so that at least outer peripheral side surface might be covered among the surfaces of a holding member, it is not restricted to this, For example, a metal film is formed so that the inner peripheral side surface of a holding member may be covered May be.

また、上記実施形態では、保持部材をセラミックで形成したが、これに限られるものではなく、プラスチック等の樹脂で形成するようにしてもよい。   Moreover, in the said embodiment, although the holding member was formed with the ceramic, it is not restricted to this, You may make it form with resin, such as a plastics.

また、上記実施形態では、透光性を有する透光性金属膜をカバーガラスの下面に形成するようにしたが、これに限られるものではなく、透光性金属膜をカバーガラスの上面に形成するようにしてもよい。   Moreover, in the said embodiment, although the translucent metal film which has translucency was formed in the lower surface of a cover glass, it is not restricted to this, A translucent metal film is formed in the upper surface of a cover glass You may make it do.

固体撮像装置の概観斜視図である。It is a general-view perspective view of a solid-state imaging device. 固体撮像装置の分解斜視図である。It is a disassembled perspective view of a solid-state imaging device. 図１中のＡ−Ａ線に沿う固体撮像装置の断面図である。It is sectional drawing of the solid-state imaging device which follows the AA line in FIG. 図２中のＢ−Ｂ線に沿う固体撮像装置の断面図である。It is sectional drawing of the solid-state imaging device along the BB line in FIG. 固体撮像装置の第１の変形例を示す断面図である。It is sectional drawing which shows the 1st modification of a solid-state imaging device. 固体撮像装置の第２の変形例を示す断面図である。It is sectional drawing which shows the 2nd modification of a solid-state imaging device. 固体撮像装置の第３の変形例を示す断面図である。It is sectional drawing which shows the 3rd modification of a solid-state imaging device.

符号の説明Explanation of symbols

２，３，４，５ 固体撮像装置
１０ ベアチップ
１１ 受光部
２０，５０，６０，９０ 保持部材
２１，５１，６１，９１ 金属膜
３０，７０ カバーガラス
３１，７１ 透光性金属膜
４０，８０ 実装基板
５４，９４ 接着剤
８２ フレキシブルプリント配線板
８２ａ 金属層 2, 3, 4, 5 Solid-state imaging device 10 Bare chip 11 Light receiving unit 20, 50, 60, 90 Holding member 21, 51, 61, 91 Metal film 30, 70 Cover glass 31, 71 Translucent metal film 40, 80 Mounting Substrate 54, 94 Adhesive 82 Flexible printed wiring board 82a Metal layer

Claims (4)

受光部が形成されたベアチップと、このベアチップを保持する保持部材と、前記ベアチップの受光部が形成された面に対向するように前記保持部材に取り付けられた透光性部材と、前記保持部材を実装する実装基板とを備えた固体撮像装置において、
前記保持部材は、その表面に接地された金属膜が形成されていることを特徴とする固体撮像装置。 A bare chip in which a light receiving portion is formed, a holding member for holding the bare chip, a translucent member attached to the holding member so as to face a surface on which the light receiving portion of the bare chip is formed, and the holding member. In a solid-state imaging device including a mounting substrate to be mounted,
A solid-state imaging device, wherein the holding member has a metal film grounded on a surface thereof. 前記実装基板は、前記ベアチップの受光部が形成されていない面を露出する開口を備え、この開口及び実装基板の表面を覆うように接地された金属層が設けられていることを特徴とする請求項１記載の固体撮像装置。   The mounting board includes an opening exposing a surface of the bare chip where a light receiving portion is not formed, and a grounded metal layer is provided so as to cover the opening and the surface of the mounting board. Item 2. The solid-state imaging device according to Item 1. 前記透光性部材は、その表面に導電性及び透光性を有する透光性金属膜が形成され、この透光性金属膜は、保持部材表面の前記金属膜に電気的に接続されていることを特徴とする請求項１又は２いずれかに記載の固体撮像装置。   The translucent member has a translucent metal film having conductivity and translucency formed on the surface thereof, and the translucent metal film is electrically connected to the metal film on the surface of the holding member. The solid-state imaging device according to claim 1, wherein the solid-state imaging device is provided. 前記透明金属膜と保持部材表面の前記金属膜とは、導電性の接着剤によって接続されていることを特徴とする請求項３記載の固体撮像装置。   The solid-state imaging device according to claim 3, wherein the transparent metal film and the metal film on the surface of the holding member are connected by a conductive adhesive.
JP2003318645A 2003-09-10 2003-09-10 Solid state imaging apparatus Pending JP2005086100A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003318645A JP2005086100A (en) 2003-09-10 2003-09-10 Solid state imaging apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003318645A JP2005086100A (en) 2003-09-10 2003-09-10 Solid state imaging apparatus

Publications (1)

Publication Number Publication Date
JP2005086100A true JP2005086100A (en) 2005-03-31

Family

ID=34417871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003318645A Pending JP2005086100A (en) 2003-09-10 2003-09-10 Solid state imaging apparatus

Country Status (1)

Country Link
JP (1) JP2005086100A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028216A (en) * 2006-07-24 2008-02-07 Matsushita Electric Ind Co Ltd Photoelectric conversion device
JP2008172191A (en) * 2007-01-08 2008-07-24 Visera Technologies Co Ltd Electronic assembly for image sensor device, and method of fabricating the same
WO2008090653A1 (en) * 2007-01-24 2008-07-31 Konica Minolta Opto, Inc. Imaging apparatus, method for assembling imaging apparatus and portable terminal
KR100982270B1 (en) * 2008-08-08 2010-09-15 삼성전기주식회사 Camera module of method for manufacuturing the same
JP2011035458A (en) * 2009-07-29 2011-02-17 Fujifilm Corp Camera module
CN102868848A (en) * 2011-07-08 2013-01-09 株式会社理光 Image pickup component fixing structure and fixing method, image pickup and electric apparatus
JP2013235933A (en) * 2012-05-08 2013-11-21 Nikon Corp Imaging element and manufacturing method of the same
KR101361446B1 (en) * 2006-08-25 2014-02-10 엘지이노텍 주식회사 Camera module for protecting ESD
WO2017081840A1 (en) * 2015-11-12 2017-05-18 ソニー株式会社 Solid-state imaging device and solid-state imaging apparatus
JP2018055324A (en) * 2016-09-28 2018-04-05 株式会社Ｎｓｃ cover glass
JP2018112807A (en) * 2017-01-10 2018-07-19 株式会社Ｎｓｃ Cover glass and touch panel device
US10497731B2 (en) 2017-02-14 2019-12-03 Canon Kabushiki Kaisha Photoelectric conversion device
JPWO2021070442A1 (en) * 2019-10-11 2021-04-15

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61123288A (en) * 1984-11-20 1986-06-11 Toshiba Corp Solid-state pick up device
JPH02229453A (en) * 1988-11-25 1990-09-12 Fuji Photo Film Co Ltd Semiconductor device and manufacture thereof
JPH08234073A (en) * 1995-02-28 1996-09-13 Canon Inc Optical device
JPH1198394A (en) * 1997-09-23 1999-04-09 Semiconductor Energy Lab Co Ltd Electro-optical device and system using the device
JP2001345438A (en) * 2000-03-30 2001-12-14 Matsushita Electric Ind Co Ltd Solid-state image sensing device and its preparation method
JP2003100920A (en) * 2001-09-25 2003-04-04 Kyocera Corp Container for optical semiconductor element

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61123288A (en) * 1984-11-20 1986-06-11 Toshiba Corp Solid-state pick up device
JPH02229453A (en) * 1988-11-25 1990-09-12 Fuji Photo Film Co Ltd Semiconductor device and manufacture thereof
JPH08234073A (en) * 1995-02-28 1996-09-13 Canon Inc Optical device
JPH1198394A (en) * 1997-09-23 1999-04-09 Semiconductor Energy Lab Co Ltd Electro-optical device and system using the device
JP2001345438A (en) * 2000-03-30 2001-12-14 Matsushita Electric Ind Co Ltd Solid-state image sensing device and its preparation method
JP2003100920A (en) * 2001-09-25 2003-04-04 Kyocera Corp Container for optical semiconductor element

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028216A (en) * 2006-07-24 2008-02-07 Matsushita Electric Ind Co Ltd Photoelectric conversion device
KR101361446B1 (en) * 2006-08-25 2014-02-10 엘지이노텍 주식회사 Camera module for protecting ESD
JP2008172191A (en) * 2007-01-08 2008-07-24 Visera Technologies Co Ltd Electronic assembly for image sensor device, and method of fabricating the same
WO2008090653A1 (en) * 2007-01-24 2008-07-31 Konica Minolta Opto, Inc. Imaging apparatus, method for assembling imaging apparatus and portable terminal
KR100982270B1 (en) * 2008-08-08 2010-09-15 삼성전기주식회사 Camera module of method for manufacuturing the same
JP2011035458A (en) * 2009-07-29 2011-02-17 Fujifilm Corp Camera module
CN102868848B (en) * 2011-07-08 2015-03-25 株式会社理光 Image pickup component fixing structure and fixing method, image pickup and electric apparatus
CN102868848A (en) * 2011-07-08 2013-01-09 株式会社理光 Image pickup component fixing structure and fixing method, image pickup and electric apparatus
JP2013235933A (en) * 2012-05-08 2013-11-21 Nikon Corp Imaging element and manufacturing method of the same
WO2017081840A1 (en) * 2015-11-12 2017-05-18 ソニー株式会社 Solid-state imaging device and solid-state imaging apparatus
US10506186B2 (en) 2015-11-12 2019-12-10 Sony Corporation Solid-state imaging device and solid-state imaging apparatus
JP2018055324A (en) * 2016-09-28 2018-04-05 株式会社Ｎｓｃ cover glass
JP2018112807A (en) * 2017-01-10 2018-07-19 株式会社Ｎｓｃ Cover glass and touch panel device
US10497731B2 (en) 2017-02-14 2019-12-03 Canon Kabushiki Kaisha Photoelectric conversion device
JPWO2021070442A1 (en) * 2019-10-11 2021-04-15
WO2021070442A1 (en) * 2019-10-11 2021-04-15 日本電気硝子株式会社 Package and method for producing same, and cover glass and method for producing same

Similar Documents

Publication Publication Date Title
JP4852675B2 (en) Electronic assembly for image sensor device and method of manufacturing the same
US7659937B2 (en) Camera module equipped with an optical filter having an edge not in contact with a fixing portion
US7019374B2 (en) Small-sized image pick up module
TWI411295B (en) Electronic assembly for an image sensing device, wafer level lens set
US7391002B2 (en) Solid state imaging device having electromagnetic wave absorber attached to a mounting board
EP1603166A1 (en) Image pickup device and camera module
JP4170950B2 (en) Optical device and manufacturing method thereof
JP2005086100A (en) Solid state imaging apparatus
JPWO2006075381A1 (en) Camera module and semiconductor device
JP3758311B2 (en) Imaging device
JP4745016B2 (en) The camera module
KR100730062B1 (en) Camera module having improved noise characteristics
JP4182253B2 (en) The camera module
EP1694061A2 (en) Television receiving tuner with reduced size and thickness
JP2008017505A (en) Camera module and optical filter
JP2007194441A (en) Semiconductor device for image sensor and its manufacturing method
JP2004134875A (en) Optical module and manufacturing method thereof, circuit board, and electronic apparatus
EP0475370B1 (en) Compact imaging apparatus for electronic endoscope with improved optical characteristics
JP3369865B2 (en) Solid-state imaging device
JP2003324660A (en) Solid-state pickup device
KR100766353B1 (en) Camera module
EP4235769A1 (en) Imaging device, electronic apparatus, and method for manufacturing imaging device
JP2004172436A (en) Imaging device package, camera module, and camera
JP2004134876A (en) Optical module and manufacturing method thereof, circuit board, and electronic apparatus
JP2009252807A (en) Imaging device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060509

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20061220

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080917

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080925

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081111

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090128

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090527