JP2001345438A - Solid-state image sensing device and its preparation method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To manufacture a miniaturized and highly reliable solid-state image sensing device of a low price by enabling, for example, a fixing member, which sets an arbitrary space distance between a transparent board inner surface and a photosensitive surface of a solid-state image sensing element, to be adopted by improving freedom on design by enabling a lead to be connected to a solid-state image sensing element alone. SOLUTION: A solid-state image sensing device 10 is provided with a solid-state image sensing element 11 whereto a lead 12 is connected, an optical glass 13 facing a photosensitive surface 11a of the solid-state image sensing element 11; and a storage container 14 which is interposed between the solid-state image sensing element 11 and the optical glass 13, and sets the size of a space 18 arbitrarily. The lead 12 is formed to curve in a direction agent from a circumferential edge of the solid-state image sensing element 11 as a bending part which bends in non-contact with a position corresponding to an outer circumferential corner part of the solid-state image sensing element 11, and can be led out from a rear side of the photo sensitive surface 11a to an outside when it is supplied by a TAB film and connected to the solid-state image sensing element 11.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a solid-state imaging device and a method for manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, there has been known a solid-state image pickup apparatus in which a lead wire is connected to an electrode on a light receiving surface of a solid-state image pickup device, an electric signal obtained by photoelectrically converting received light is taken out, and an image of a subject is taken. The solid-state imaging device is assembled and manufactured so that a transparent plate is disposed so as to face the light-receiving surface of the solid-state imaging device and protected.

As this type of solid-state imaging device, there is one having a structure as shown in FIGS. 23 and 24. The solid-state imaging device 100 includes a solid-state imaging device (CCD) 101.
Of the lead wire 102 (so-called internal lead terminal) is connected to an electrode pad 101b which is drawn out from the light receiving surface 101a of the lead wire 102 and disposed on the outer periphery thereof.
Of the solid-state image sensor 10
The solid-state imaging device 101 is placed in a thin metal container 104 together with an optical glass (transparent plate) 103 that protects the light receiving surface 101a. Encapsulating material 10 including the whole
5 is assembled and manufactured by filling and sealing.

The lead wire 102 is electrically and mechanically connected to the plurality of electrode pads 101b of the solid-state image pickup device 101 by a bonding method such as ultrasonic thermocompression bonding while the tip portions are pressed against each other via the bumps 106. And this lead wire 10
The front end portion 2 is bent at a substantially right angle in the vicinity of the outer peripheral corner portion so as to extend from the peripheral edge to the side surface of the solid-state imaging device 101 (so that the rear end portion extends to the back side of the light receiving surface 101a). .

[0005] The optical glass 103 is a solid-state image sensor 101.
The size of the lead wire is approximately the same as
02, which is placed on the front end (upper surface) of the light-receiving surface 2
01a is positioned so as to cover it at the center. The optical glass 103 is fixedly bonded to the solid-state imaging device 101 together with the tip of the lead wire 102 by an adhesive 107 applied to the periphery of the light receiving surface 101a so as to surround the light receiving surface 101a. A sealed space 108 having a space distance of about 0.1 mm is formed therebetween, and the effect of an on-chip lens (not shown) for condensing light on the light receiving surface 101a of the solid-state imaging device 101 is brought out.

As described above, the solid-state imaging device 100 adopts a structure in which the solid-state imaging element 101 and the optical glass 103 are laminated via the tip of the lead wire 102, and these are housed and sealed in the housing 104. Have been made. In this solid-state imaging device 100, the lead wire 102 connected to the electrode pad 101 b is bent near the periphery of the solid-state imaging device 101 and along the vicinity of the side surface, thereby being drawn out from the back side of the light receiving surface 101 a to reduce the radial direction. It has a structure and is used for a video camera of a camera head separated type separated from a control unit such as an endoscope.

The lead wire 102 is generally connected to the solid-state imaging device 101 by either a lead frame method or a film carrier method. In addition,
In the figure, an insulating plate 109 is fixed (adhesive or bonded) to the lead wire 102.

Here, the solid-state imaging device 101 is manufactured from a silicon substrate, but the silicon substrate itself has a potential, and if it contacts the lead wire 102, it will short-circuit and malfunction. In particular, the light receiving surface 101 of the solid-state imaging device 101
Since the outer peripheral corner from the peripheral edge on the side a to the side surface is a portion that is easily contacted with the lead wire 102, the following contrivance has been made in connecting the lead wire 102 to the solid-state imaging device 101.

First, when the lead wire 102 is supplied by a lead frame method, the lead wire 102 is made of, for example, an iron-nickel alloy and is rigid because it has a thickness of about 150 μm. Therefore, the lead wire 102
Is bent after being bonded to the bump 106, the electrode pad 101b or the bump 106
The joint between the lead wire 102 and the lead wire 102 is broken, and the lead wire 102 comes into contact with the outer peripheral corner of the solid-state imaging device 101 as shown in FIG.

[0010] From this, by preparing a lead wire 102 whose distal end is bent at a substantially right angle, it is guided along the side surface of the solid-state imaging device 101 as shown in FIG. After being positioned and brought into a state in which the tip portion is pressed against the bump 106 as shown in FIG. 26 (b), it can be electrically and mechanically connected by ultrasonic thermocompression bonding or the like. By this step, the bending step after the connection of the lead wire 102 can be omitted, the quality of the connection state can be ensured, and a short circuit with the outer peripheral corner of the solid-state imaging device 101 can be prevented.

On the other hand, when the lead wire 102 is supplied by a film carrier method, the lead wire 102 is made of a copper foil formed on an insulating film (insulating plate) 109. For this reason, it is not necessary to bend the front end portion in advance as in the case of the lead frame method, but it is sufficient to bend after connecting to the solid-state imaging device 101.

More specifically, FIGS.
As shown in (d), the lead wire 102 is connected to the bump 106 formed on the electrode pad 101b of the solid-state imaging device 101 as a film carrier (in a linear state) (a). After the adhesive 107 is applied together with the periphery of the light receiving surface 101a (FIG. 28B), as shown in FIG. 28, the optical glass 103 is mounted on the adhesive 107 so as to sandwich the leading end of the lead wire 102 in a solid state. The adhesive 107 can be spread and tightly fixed between the image sensor 101 and the optical glass 103 without any gap (c).
Thereafter, the lead wire 102 fixed to the peripheral edge of the optical glass 103 is bent at a substantially right angle along the vicinity of the side surface of the solid-state imaging device 101 (d) to manufacture.

When the lead wires 102 are supplied by a film carrier method, the solid-state imaging device 1 described above is used.
Instead of placing the optical glass 103 directly on the tip of the lead wire 102 as in the case of 00, the optical glass 103 is optically placed via an insulating film (insulating plate) that holds the tip of the lead wire 102 connected to the solid-state imaging device 101. The glass 103 may be fixed.

More specifically, as shown in FIGS. 29 and 30, a frame having an opening so that the light receiving surface 101a of the solid-state imaging device 101 is exposed and having an outer periphery formed to have substantially the same size as the outer shape of the solid-state imaging device 101. A film carrier in which the tip of the lead wire 102 is held on an insulative insulating film (insulating plate) 119 is prepared, and after the tip of the lead wire 102 is connected to the electrode pad 101b of the solid-state imaging device 101, the lead wire is connected. Insulating film 119 holding 102
The optical glass 103 is placed on the
The solid-state imaging device 200 may be configured to be joined to the solid-state imaging device.

In the solid-state imaging device 200, by interposing the insulating film (insulating plate) 119 between the optical glass 103 and the lead wire 102, the light receiving surface 101a of the solid-state imaging device 101 and the inner surface of the optical glass 103 are provided. Can be set to about 0.2 mm, which is wider than about 0.1 mm in the case of the solid-state imaging device 100 described above, and the position where the lead wire 102 is fixed to the outside of the periphery of the optical glass 103. And the lead wire 102 can be bent along the vicinity of the side surface of the solid-state imaging device 101.

The solid-state imaging device 200 also includes a lead wire 102 formed on the insulating film 119 at the tip thereof.
An electrode pad (not shown) is formed, and the solid-state imaging device 101 is formed.
Ball bump 106 formed on the electrode pad 101b of FIG.
Is connected to the insulating film 119.
After being adhesively bonded to the optical glass 103 with a general adhesive 117, the solid-state imaging device 101 and the lead wires 102
Are connected, for example, a diameter of 1-1 in an epoxy resin.
By using a so-called anisotropic conductive material (conductive adhesive) 120 in which gold particles of 0 μm are dispersed, conduction is reliably obtained by the gold particles and the space 118 is sealed in a closed state.

[0017]

However, in such a conventional solid-state imaging device, the solid-state imaging device 10
1 has a small spatial distance of about 0.1 mm between the light receiving surface 101a and the inner surface of the optical glass 103, and the insulating film 11
Even though the 9 is interposed, it is only about 0.2 mm, which is effective for equipment that requires thinning. Has become.

In such a configuration, if an opaque defect such as a foreign matter or a scratch that does not transmit imaging light is present on the optical glass 103 or the like close to the light receiving surface 101a, the light receiving surface 101a
The shorter the interval from to the defect, the more prominently displayed in the captured image due to the characteristics of the solid-state imaging device 101, resulting in an image defect. Specifically, for example, in the case of a solid-state imaging device having about 1/4 inch and about 400,000 pixels, fine dust and scratches of about 2 μm become image defects at the above-mentioned spatial distance. Therefore, quality control of optical defects in the manufacturing process and the assembling process of the optical glass 103 must be strictly performed, and the demand for high quality lowers the yield and increases the cost. there were.

To avoid this, the spatial distances 108, 1
Although it is conceivable that the defect 18 does not affect the captured image by expanding 18 as much as possible, for example, when the above-mentioned spatial distance 108 is increased to 1 mm and the lens aperture is set to F16, the size of the optical defect is Can be set so as to allow a thickness of about 10 μm. In the solid-state imaging devices 100 and 200, the adhesives 107, 117 and 120 having fluidity are applied to the periphery of the light receiving surface 101 a of the solid-state imaging device 101. Since the optical glass 103 is fixed by being applied in a narrow width (for example, about 0.3 mm), there is a limit even if the adhesives 107, 117, and 120 are applied at a high level. By fixing the tip of the lead wire 102 bent by 120,
Since short circuit is prevented by contacting the outer peripheral corner of the solid-state imaging device 101, as long as this structure is adopted,
It is necessary to regulate the fixing position (bending position) of the lead wire 102 with the adhesives 107 and 117.

In order to solve such a problem, the inventor of the present invention interposes between the solid-state image pickup device and the optical glass (transparent plate) an attachment member which allows the interval between these to be set arbitrarily. However, it has been a problem to secure the positioning accuracy of the mounting member so that the mounting member can be connected to the solid-state imaging device separately from the lead wire. Further, it is considered that the lead wire itself can be connected to the solid-state imaging device separately from other members, so that the degree of freedom in design can be improved and the cost can be reduced.

Accordingly, the present invention has been made to solve such a problem, and it is possible to improve the degree of freedom in design by enabling a lead wire to be independently connected to a solid-state image pickup device. A mounting member for setting an arbitrary spatial distance between the inner surface of the transparent plate and the light-receiving surface of the solid-state imaging device, thereby making it possible to manufacture a small, highly reliable, low-cost solid-state imaging device. .

[0022]

According to the present invention, there is provided a solid-state imaging device comprising: a lead wire for extracting a photoelectrically converted electric signal by connecting to an electrode extending from a light receiving surface of the solid-state imaging device; In a solid-state imaging device having a structure that is bent along the side surface vicinity and pulled out from the back side of the light receiving surface,

In order to solve the above-mentioned problem, the lead wire has a bent portion which is bent at a position corresponding to a corner from the light receiving surface side to the side surface of the solid-state imaging device,
The bent portion is formed in a curved shape that is curved in a direction away from the light receiving surface side of the solid-state imaging device, so as to extend the lead wire in a direction along the vicinity of the side surface. For example, after the solid-state imaging device is held by the first holding means, the lead wire connected to the electrode of the solid-state imaging device is bent along the vicinity of a side surface of the solid-state imaging device, and then the lead wire Is held by the second holding means, and thereafter, the first and second
It is preferable to adopt a bending step and a bending step of forming a bent portion and a bent portion of the lead wire by relatively moving the holding means in directions approaching each other. In addition, this method uses the bending stress of the lead wire generated in the bending step when the connection strength between the electrode of the solid-state imaging device and the distal end of the lead wire does not satisfy a specified strength. Since the setting at which the joint is broken can be arbitrarily set in the shape of the lead wire or the bending condition in the bending step, there is an advantage that the bending operation itself also serves as the quality evaluation of the joint.

Alternatively, an insulator is arranged at a peripheral portion of the solid-state imaging device on the light-receiving surface side, and the lead is bent at a position corresponding to a corner from the light-receiving surface side to the side surface of the solid-state imaging device. A configuration in which the insulator is interposed between a bent portion of a line and the peripheral portion of the solid-state imaging device,

Alternatively, the lead wire is formed with a bent portion having a weaker strength than other portions at a position corresponding to a corner from the light receiving surface side to the side surface of the solid-state imaging device. It is also preferable that the solid-state imaging device bends in a non-contact manner in the vicinity of the corner portion by, for example, making the width narrower than the bent portion to form a weaker strength.

By employing any of these configurations, a bent portion provided on a lead wire at a position corresponding to a corner (hereinafter also referred to as an outer peripheral corner) extending from the light receiving surface side to the side surface of the solid-state imaging device. However, for example, the solid-state imaging device and the lead wire can be easily formed into a curved shape by easy processing, or by the interposition of an insulator arranged at the peripheral edge thereof, or By bending preferentially with weaker strength than other than the curved part, the lead wire can be extended in the direction along the side of the solid-state imaging device without extremely approaching the outer peripheral corner, and the electrode Without causing short-circuits due to contact
The leading end can be connected to the electrode of the solid-state imaging device with the lead wire alone. Therefore, it is possible to improve the degree of freedom in designing the lead wire. For this reason, when a mounting member described below that sets an arbitrary spatial distance between the inner surface of the optical glass and the light receiving surface of the solid-state imaging device is used. The mounting member can be designed freely, and a small, highly reliable and inexpensive solid-state imaging device can be provided.

Here, in the connecting step, the lead wire in which a bump (Bump) for connecting to the electrode of the solid-state imaging device is formed in advance at the tip may be prepared. The solid-state imaging device may be prepared in which a bump (Bump) for connecting to the distal end of the lead wire is formed on the electrode in advance, and the bump may be formed on one or both of these. Further, the electrodes of the solid-state imaging device may be directly connected to the tips of the lead wires without interposing an electrode connection bump. Preferably, the lead wire is made of copper or aluminum. in this case,
At least the step of forming the bump can be omitted, and the number of working steps can be reduced. In this connection step, the electrodes of the solid-state imaging device and the tips of the lead wires may be connected individually or collectively. In the case of individual connection, the electrodes of the solid-state imaging device and the end portions of the lead wires can be joined in a separate connection operation, while in the case of simultaneous connection, the solid-state imaging with a short work tact The electrode of the element and the tip of the lead wire can be joined.

In the connecting step and the bending step, the lead wire is TAB (Tape Automated).
It is simple and preferable to supply the film formed on the bonding film. As the TAB film, the holding portion for holding the space between the lead wires is smaller than the side surface of the solid-state imaging device when the lead wire is bent. It is preferable to set so that it is located on the back side and exposed to the outside, and this lead wire is bent again along the outer surface parallel to the solid-state imaging device of the mounting member located outside, and assembled into a thin structure. Can also.

In the solid-state imaging device according to the present invention, the transparent plate is separated from the light-receiving surface between the solid-state imaging device and the transparent plate facing the light-receiving surface so as to solve the above problems. It is preferable to interpose a mounting member to be attached to the solid-state imaging device by positioning the mounting member to a position where the mounting member and the transparent plate are to be positioned. A second positioning step of positioning the positional relationship between the solid-state imaging device to which the lead wire is connected and the mounting member, and a first bonding step of bonding and fixing the mounting member and the transparent plate to the positioned positional relationship;
The first and second bonding steps of the second bonding step of bonding and fixing the solid-state imaging device and the mounting member to the positioned positional relationship are performed simultaneously, or in the order of the first and second bonding steps, or The second and first bonding steps may be performed in this order. In this case, the solid-state imaging device and the transparent plate can be joined together with the mounting member interposed therebetween, and the distance between the light receiving surface of the solid-state imaging device and the inner surface of the transparent plate is increased by the thickness of the mounting member. Can be set widely. Therefore, the allowable range of the size of the optical defect that does not affect the captured image can be increased, and quality control can be eased and the yield can be improved, so that an inexpensive solid-state imaging device can be provided.

Further, the mounting member is configured to directly contact and position the opposing surfaces of the solid-state imaging device and the transparent plate,
Further, in the second positioning step, after holding the solid-state imaging device and facing the mounting member at a preset position, the holding of the solid-state imaging device is released, and the solid-state imaging device is placed on the facing surface of the solid-state imaging device. By directly contacting the mounting member, when the transparent plate is joined to the mounting member, the transparent plate and the solid-state imaging device are positioned so that the distance between the transparent plate and the solid-state imaging device is a distance corresponding to the thickness of the mounting member. Accordingly, the relative positional relationship between the solid-state imaging device and the transparent plate can be easily determined based on the thickness of the mounting member, and the interval between them can be set to the production accuracy of the mounting member.

The mounting member is preferably made of a conductive material such as a metal or an organic material which can be molded or cut so that it can be manufactured inexpensively even in mass production or small production. When using conductive materials,
In order to avoid conduction with a solid-state imaging device or the like, it is appropriate that at least a joint surface with the solid-state imaging device has an insulating property, or it is appropriately made of an insulating material as it is. In this case, so that it can be grounded,
When it is made of a conductive material, it is convenient to expose a part thereof instead of imparting insulation to the whole, and when it is made of an insulating material, it is convenient to form metal plating on the outer surface exposed to the outside.

It is preferable that the mounting member be manufactured by selecting a material having a thermal expansion coefficient close to that of the transparent plate because it is possible to prevent the sealing function from being impaired due to a temperature change. It is preferable to use an optical glass or an optical filter as the transparent plate.

Further, it is preferable that the mounting member is formed in a frame shape in which the connection state of the leading end of the lead wire joined to the electrode of the solid-state imaging device can be visually (confirmed) positioned inside. The solid-state imaging device is configured such that a lead wire is bent along the vicinity of the side surface of the solid-state imaging device and can be drawn out from the back side of the light-receiving surface, and can be sealed in a state where the solid-state imaging device is sealed. It is preferable to form a frame that covers the side surface of the solid-state imaging device, and to form a portion that directly contacts the solid-state imaging device and a space through which the lead wire passes without contact.

[0034]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. 1 to 7 are views showing a first embodiment of a solid-state imaging device and a method of manufacturing the same according to the present invention.

First, the configuration of the solid-state imaging device will be described.

In FIG. 1 to FIG.
Is a solid-state imaging device 11 having a light receiving surface 11a formed at the center and electrode pads 11b drawn out from the light receiving surface 11a on both sides, and a lead wire connected to the electrode pad 11b at the tip. 12, an optical glass 13 positioned and fixed to the solid-state imaging device 11 in a state facing the light receiving surface 11a and functioning as a protective cover;
1a is formed in a frame shape so as to accommodate the solid-state imaging device 11 in a state desired to the outside, and is interposed between the solid-state imaging device 11 and the optical glass 13, so that both of these opposing surfaces are provided. A storage container (attachment member) 14 to be joined;
And a lead wire 12 connected to an electrode pad 11b of an electric signal obtained by photoelectrically converting incident light through an optical glass 13 by a solid-state imaging device 11 on a light receiving surface 11a.
And sends it to, for example, a device that captures and records a subject video.

The solid-state image pickup device 10 includes a solid-state image pickup device 1
1, a lead wire 12 and an optical glass 13 are assembled in substantially the same manner as the above-described solid-state imaging devices 100 and 200 of the related art.

The lead wire 12 is manufactured and supplied by a film carrier method in which a thick film made of a conductive material is formed on an insulating film 19, and its tip is formed on a plurality of electrode pads 11 b of the solid-state imaging device 11. Bump 16
After being electrically and mechanically connected to the solid-state imaging device 11, the solid-state imaging device 11 is bent almost at a right angle in the vicinity of the outer peripheral corner from the periphery to the side surface without being reinforced by an adhesive or the like. The rear end extends to the back side of the light receiving surface 11a. In the present embodiment, as will be described later, since the tip of the lead wire 12 is directly connected to the bump 16 of the solid-state imaging device 11 without an adhesive or the like, the anisotropic conductive material in which the gold particles are dispersed is used. Electrical without using
Can be connected mechanically.

The optical glass 13 is formed to have a size substantially equal to the outer shape of the solid-state imaging device 11 and forms a condensing on-chip lens (not shown) facing the light receiving surface 11a of the solid-state imaging device 11. And the light receiving surface 11a
Is positioned so as to cover at the center via the space 18. In the present embodiment, the space 18 on the front surface of the light receiving surface 11a of the solid-state imaging device 11 is hermetically closed (sealed) by the optical glass 13. However, the present invention is not limited to this.
It goes without saying that a transparent plate of a single component such as an infrared cut filter or a crystal filter may be used, or a composite component such as an infrared cut filter and a crystal filter may be used.

On the other hand, the storage container 14 is
Is formed in a frame shape having an inner surface opposed at a fixed interval from a periphery adjacent to the light receiving surface 11a to a rear side of the side surface, and a flange formed inward so as to face the periphery of the light receiving surface 11a. The space 14 formed between the solid-state imaging device 11 and the optical glass 13 with the portion 14a interposed between the solid-state imaging device 11 and the optical glass 13 can be arbitrarily set to, for example, about 0.2 mm to several mm.

The accommodation container 14 is formed in accordance with the thickness of the thick film formed on the insulating film 19 so that the lead wire 12 can extend in a non-contact manner without being deformed or short-circuited. For example, the inner surface is formed so as to define a gap (path) of about 0.2 mm.
The optical glass 13 is coated with an adhesive 15 between the opposing surfaces and adhesively bonded to the optical glass 13, while the solid-state imaging device 11 is secured so as to secure a space defining a routing path of the bent lead wire 12. With the position (positional relationship) positioned,
The space is filled with a sealing material 17 such as an epoxy resin to be joined and sealed.

Therefore, the container 14 houses the solid-state image sensor 11 and is fixed to both the solid-state image sensor 11 and the optical glass 13 to position the optical glass 13 with respect to the solid-state image sensor 11. Thus, the interval of the space 18 from the light receiving surface 11a to the inner surface of the optical glass 13 can be set arbitrarily. Note that, in this case, the housing container 14 defines a space for filling the sealing material 17 on the entire periphery of the solid-state imaging device 11, and a method of assembling the same will be described later.

Here, for the container 14, in the case of small-scale production without producing a mold, a material which is easy to machine such as cutting is selected, while a material which can be formed and processed is selected in mass production. Also, it is preferable to select and set the material according to the use environment and use.

Specifically, when a conductive material such as a metal is selected for the container 14, it is preferable that at least the inner surface be insulated so that a short circuit with the lead wire 12 does not occur. For example, when the container 14 is formed of aluminum, insulation is ensured by performing a so-called alumite treatment. Further, the container 14 may be made of an insulating material such as an inorganic material such as ceramic or an organic material such as epoxy resin without being limited to the conductive material. When selecting the material of the storage container 14, if the material is used in an environment where the temperature changes drastically, in order to prevent a problem in the airtight quality due to the temperature cycle,
It is preferable to select a material having a coefficient of thermal expansion close to that of the optical glass 13 or the solid-state imaging device 11 so as not to deteriorate the bonding state.

Further, even if the material of the container 14 is selected, it is preferable that the external color be black so that the diffusely reflected light is hardly reflected so as not to enter the light receiving surface 11a of the solid-state imaging device 11. When it is made of an insulated conductive material, a part of it is exposed, or when it is made of an insulating material, plating is applied to the outer surface,
It is convenient to form a conductive portion at a portion exposed to the outside so that the ground can be taken. When the container 14 is made of metal or plated on its outer surface, the moisture resistance can be improved.

The brim 14 a of the housing 14 is slightly narrower than the outer shape of the solid-state image sensor 11.
The electrode pad 1 formed on the side of the light receiving surface 11a is formed so as to have an opening larger than the area of the light receiving surface 11a.
The connection state between the lead 1b and the tip of the lead wire 12 is set so as to be visually confirmed.

Next, a method for manufacturing the solid-state imaging device 10 will be described with reference to FIG.
This will be described with reference to FIGS.

First, as shown in FIG.
The so-called TAB (the solid-state imaging device 11 having the lead 1a and the electrode pad 11b (not shown) and the thick film constituting the lead wire 12 formed on the insulating film 19 and the bump 16 formed at the tip of the lead wire 12 is formed. Tape Autom
ated Bonding) A film is prepared and the solid-state imaging device 11 is prepared.
The bump 16 of the lead wire 12 is positioned so as to face the electrode pad 11b on the light receiving surface 11a side by transferring the insulating film 19 (preparation step). At this time, when the bumps 16 are formed at the tips of the lead wires 12, the gold bumps 16 grown by electrolytic plating are used.
Transfer bump method for transferring the lead wire 12 to the lead wire 12 or the lead wire 1
A mesa bump method may be used in which the tip of 2 is formed into a projection by etching. In this embodiment, the case where the bump is formed on the lead wire 12 side and the connection of the lead wire where the bump is not formed will be described.
b may be formed beforehand. In this case,
The ball bumps may be formed using a wire bonding method.

Next, as shown in FIG. 4B, the bump 16 at the tip of the lead wire 12 is brought close to the electrode pad 11b of the solid-state imaging device 11, and a plurality of lead wires 1 are kept in this state.
2 are connected by a so-called single point method in which an individually heated bonding tool 301 is pressed and ultrasonically bonded (connection step), and then the insulating film 19 holding the lead wire 12 is attached to a reel-shaped TAB film body (FIG. (Not shown)) into a shape as shown in FIG. The bonding tool 301 described above is similar to that shown in FIG.
May be connected using a heated bonding tool 301 ′ of a collective connection method capable of connecting a plurality of lead wires 12 at a time. When the number of electrodes to be joined is large, this method can shorten the work tact time and is more effective. Further, as a structure for connecting the tip of the lead wire to the electrode pad of the solid-state imaging device, the electrode pad 11 of the solid-state imaging device 11 is not interposed as shown in FIG.
4B, a bonding tool 301 having a heated front end portion of the lead wire 12 ″ is pressed and ultrasonically bonded, or a plurality of lead wires are collectively connected as described above, as shown in FIG. The connection structure without the bumps can be made by separating and insulating the lead wire and the outer peripheral corner of the solid-state imaging device in a lead wire bending step described later. In the case of the connection method that does not require the bump, the trouble of forming the bump can be omitted, and the manufacturing process can be simplified.
The lead wires 12 and 12 'of the B film are provided with a gold plating of nickel base on a copper base material. In particular, the bonding quality of the lead wire 12 "described with reference to FIG. Desirable for securing. Alternatively, a TAB film may be used in which the base material of the lead wire 12 "is aluminum and a gold plating is applied on a nickel base. The material of the lead wire is aluminum, which has a Brinell hardness of about 15 and is softer than copper. The formation of gold and aluminum compounds in the part is facilitated, and the bonding quality is further stabilized.

Next, the cut T shown in FIG.
The AB film is further cut so as to cut out a range indicated by a broken line to obtain a shape as shown in FIG. 5 (d2). Thereafter, as shown in FIG. 5 (d3), the light receiving surface 11a is turned downward, and both sides of the solid-state imaging device 11 without the lead wire 12 are sandwiched by the element holder 302 (shown by oblique lines in the drawing). After the fixing, the forming jig 303 is brought into contact with the cut insulating film 19 to raise it, thereby pushing up the held lead wire 12 and bending it at a substantially right angle as shown by the broken line. At this time, FIG.
As shown in (2), the bent lead wire 12 comes into contact with or close to the outer peripheral corner from the periphery to the side surface of the solid-state imaging device 11 (before the bending step).

Next, as shown in FIG. 5 (d5), each of the lead wires 12 bent on both sides of the solid-state imaging device 11 is sandwiched between the insulating films 19 on the solid-state imaging device 11 side from both sides. To film holder 304
Then, by vertically moving one or both of the element holder 302 and the film holder 304 by a predetermined amount in the vertical direction and relatively moving the element holder 302 and the film holder 304, the outer peripheral corner from the periphery to the side surface of the light receiving surface 11a of the solid-state imaging device 11 Is formed into an R-shaped portion (bent portion) that curves in a direction away from the connection position with the bump 16, and then extends in a direction along the vicinity of the side surface of the solid-state imaging device 11. (After the bending process). In this state, even if the lead wire 12 is bent so as to extend to the back side of the light receiving surface 11a, there is no danger that the lead wire 12 comes into contact with the outer peripheral corner of the solid-state image sensor 11 and is reliably fixed from the solid-state image sensor 11. An insulating state separated at intervals can be provided. This separation interval may be set arbitrarily according to the environment and the like. For example,
In the case of the present embodiment, the thickness may be about 10 to 30 μm. The bending process of the lead wire 12 is performed by connecting the lead wire 12 to the electrode pad 11 b of the solid-state imaging device 11.
Is generated. This stress depends on the setting of the separation distance between the solid-state imaging device 11 and the lead wire 12 and the lead wire 12.
The size of the tip (periphery of the outer peripheral corner) can be adjusted. For example, the lead wire 12 has a thickness of 35 μm and a width of 45 μm.
If the separation distance between the solid-state imaging device 11 and the lead wire 12 is set to 20 μm at about μm, a peeling stress of about 15 g is generated at the joint. In other words, the bending stress can be set freely by making the sizes of the solid-state imaging device 11 and the tip of the lead wire 12 variable. Therefore, if any failure occurs in the process and the bonding strength is less than the specified value, the bonding portion can be broken in this bending process, and the quality of the product can be secured (guaranteed). .

Next, as shown in FIG. 6E, a suction collet 305 is inserted between the lead wires 12 to suction-fix the back side of the light receiving surface 11a of the solid-state imaging device 11, and
The optical glass 13 is positioned on the outer surface side of the brim portion 14a (first positioning step). For example, the adhesive 15 is coated and cured by a dispensing method, a transfer method, or the like, for example, with an ultraviolet-curing and heat-curing adhesive 15 to be joined in advance. The stored container 14 (first bonding step) is placed and fixed on a light-transmitting receiving base 306 in a state where the optical glass 13 is in contact therewith.

Next, the position adjustment in the X / Y direction and the rotation θ direction is performed at a position where the solid-state imaging element 11 adsorbed by the adsorption collet 305 is approached from the opposite side (open end side) of the accommodating container 14 from the flange 14 a. After performing the above, the adsorption collet 3
05 is lowered to position the solid-state imaging device 11 in the middle of the container 14 (second positioning step).

Then, while maintaining this state, FIG.
As shown in (f), the cradle 306 and the optical glass 1
Injecting the sealing material 17 from the dispenser 307 into a gap formed between the solid-state imaging device 11 and the storage container 14 while irradiating ultraviolet rays toward the storage container 14 and the solid-state imaging device 11 through the 3 Then, the solid-state imaging device 11 and the housing 14 are joined to hermetically seal the space 18, and thereafter, the entire sealing member 17 between the solid-state imaging device 11 and the housing 14 is thermally cured by an oven or the like. Complete joining (2nd
Joining process).

At this time, as shown in FIG.
Are simultaneously injected from two dispensers 307 that fit in the gap between the side surface of the solid-state imaging device 11 and the inner surface of the storage container 14, and are wrapped around the entire periphery by being simultaneously injected. In the present embodiment, an opaque storage container 14 is used. For this reason, the bumps connected to the electrode pads 11b of the solid-state imaging device 11 are hardened by the irradiation of ultraviolet rays when exposed to the periphery of the light-receiving surface 11 of the solid-state imaging device 11 from the flange portion 14a of the storage container 14 and exposed. The lead wire 12 can be held and fixed in a state of including the leading end portion of the lead wire 12 up to the front of the lead wire 16.

In this case, the solid-state imaging device 11 and the container 1
A path defined by a gap between the solid-state imaging device 11 and the lead wire 12 includes a suction collet 30 for suction-fixing the solid-state imaging device 11.
The thickness is determined by the thickness of the solid-state imaging device 11 and the thickness of the collar 14a of the housing 14 with reference to the upper surface of the receiving table 306 on which the optical glass 13 to which the front end 5 and the housing 14 are joined is installed and fixed. For this reason, the mechanical accuracy and the processing accuracy may be set so that an unnecessary load is not applied to the lead wire 12 during the sealing operation and short-circuits the contact with the solid-state imaging device 11. Space 18 from light receiving surface 11a of element 11 to inner surface of optical glass 13
In consideration of these, the interval between the flanges 1 of the housing container 14 is determined.
An arbitrary distance can be set by adjusting the thickness of 4a. Since the positioning and sealing operation is performed with reference to the tip of the suction collet 305 and the upper surface of the receiving base 306 as described above, the optical axis accuracy of the solid-state imaging device 10 is not only the mechanical accuracy but also the solid-state imaging device. Since the optical axis accuracy is determined by the processing accuracy in the thickness direction of the solid-state imaging device 11, the optical axis accuracy of about ± 20 μm can be obtained.
By connecting a detector that detects the position of 1a in a non-contact manner and performing position adjustment, it is possible to make the optical axis accuracy within ± 5 μm.

As described above, in the present embodiment, the optical glass 13 is fixedly joined to the solid-state imaging device 11 by interposing the collar portion 14a of the storage container 14.
By arbitrarily setting the thickness of the light receiving surface 11a
The space between the space 18 defined on the front surface and the optical glass 13 can be set wide, and the space 18 can be formed in which the allowable range of the size of the optical defect that does not affect the captured image can be increased. . Therefore, quality control of the optical glass 13 can be eased, defects due to optical defects can be reduced, the yield can be improved, and the solid-state imaging device 10 can be provided at low cost.

Since the accommodating container 14 may be formed in a frame shape in which the brim portion 14a is interposed between the solid-state image sensor 11 and the optical glass 13, the solid-state image sensor can visually recognize the tip of the lead wire 12 to be connected. 11 can be used as a container, and its production can be performed by an inexpensive method using cutting or molding according to the convenience of small-scale production or mass production. May be appropriately selected and designed according to the required function.

On the other hand, since the lead wire 12 adopts an assembly structure using the housing container 14, it is sufficient that the lead wire 12 is not deformed by being pushed by the housing container 14, and the connection with the solid-state imaging device 11 is made by a film carrier system. By doing so, the lead wire 12 can be connected to the solid-state imaging device 11 without using a hard lead frame, and the bending operation can be easily performed at an arbitrary position such as a position corresponding to the outer corner of the solid-state imaging device 11. In addition, the bent portion can be easily formed into a curved shape that does not come close to the outer peripheral corner portion, and the reliability can be improved.

Next, FIGS. 8 to 14 are views showing a second embodiment of the solid-state imaging device and the method of manufacturing the same according to the present invention. In addition, since the present embodiment is configured substantially in the same manner as the above-described embodiment, the same components are denoted by the same reference numerals, and the characteristic portions will be described.

First, the configuration of the solid-state imaging device will be described.

8 to 10, the solid-state imaging device 20
Is manufactured by assembling the solid-state imaging device 11, the lead wire 12, and the optical glass 13 using the housing container 24. The housing container 24 has the light receiving surface 11a similarly to the above-described embodiment. The solid-state imaging device 11
Is formed in a frame shape so as to house the solid-state image sensor 11 and the optical glass 13, so that the solid-state image sensor 11 is joined to the optical glass 13 by the adhesive 15. Are joined by a sealing material 17.

As shown in FIG. 11, the accommodation container 24 is provided at a constant interval around the side edge of the light receiving surface 11a to which the lead wire 12 of the solid-state imaging device 11 is connected, similarly to the above-described embodiment. Collar 2 formed inward so as to face each other
On the other hand, a brim portion 24b formed so as to directly contact the side edge of the light receiving surface 11a to which the lead wire 12 is not connected is provided.

The container 24 is provided with
The position of the space 18 between the light receiving surface 11a and the inner surface of the optical glass 13 can be arbitrarily set by positioning the a and 24b between the solid-state imaging device 11 and the optical glass 13 and the collar portion. 24b is in direct contact with the periphery of the solid-state imaging device 11, while the brim portion 24a maintains the space between the periphery of the solid-state imaging device 11 and extends the lead wire 12 without deformation or short circuit. For example, it is formed so as to define a gap (escape portion as a path) of about 0.2 mm according to the thickness of the thick film formed on the insulating film 19, for example.

It is not necessary to form the brim portion 24b over the entire length of the side of the light receiving surface 11a, as long as the brim portion 24a can be kept floating from the periphery of the solid-state imaging device 11 during the assembly operation. For example, as shown in FIG. 11, a part may be cut out to secure the bonding strength.

Next, a method of manufacturing the solid-state imaging device 20 will be described with reference to FIG.
This will be described with reference to FIGS.

First, the solid-state imaging device 11 to which the bent lead wires 12 are connected is manufactured by the preparation step, the connection step, and the bending step described in the above embodiment (see FIGS. 4 and 5). Thereafter, as shown in FIG. 12E, a suction collet 305 is inserted between the lead wires 12 to suction-fix the back side of the light receiving surface 11a of the solid-state imaging device 11, and the outer surfaces of the flange portions 24a and 24b. The container 24 is placed and fixed on the receiving table 306 in a state where the sides are in contact with each other.
Is adjusted in the X / Y direction and the θ direction at a position close to the opposite sides of the accommodating portions 24a and 24b of the accommodating container 24, and then the suction collet 305 is lowered so that the solid-state imaging device 11 After temporarily stopping at a position close to the brim portion 24b, the suction collet 305 is turned off (released), and the periphery of the light receiving surface 11a is
The solid-state imaging device 11 is positioned in a state of being in direct contact with the inner surface of the collar portion 24b of No. 4 (second positioning step).

Next, while maintaining this state, FIG.
As shown in (f), while irradiating ultraviolet rays toward the storage container 14 and the solid-state imaging device 11 through the receiving table 306, the dispenser is disposed in a gap formed between the solid-state imaging device 11 and the storage container 14. Inject sealing material 17 from 307,
The solid-state imaging device 11 and the container 14 are joined, and thereafter,
The entirety of the sealing material 17 between the solid-state imaging device 11 and the storage container 14 is thermally cured in an oven or the like to complete the joining (second joining step).

At this time, the sealing material 17 is injected from the dispenser 307 into the gap between the side surface of the solid-state imaging device 11 and the inner surface of the storage container 14 and goes around the entire circumference, similarly to the above-described embodiment. When the solid-state imaging device 11 is hardened by irradiation of ultraviolet rays when it is exposed from the device, and the solid-state imaging device 11 encloses the lead wire 12, the solid-state imaging device 11 is joined and fixed in the housing container 24.
In the present embodiment, the solid-state imaging device 11 is placed on the inner surface of the brim portion 24b of the storage container 24 by its own weight and directly contacts without any external force. As shown in FIG. Rim of light receiving surface 11a and container 2
4, the solid-state imaging element 11 is minutely lifted by, for example, about 20 μm due to the force of the sealing material 17 flowing therein, and the solid-state imaging device 11 can be firmly joined by entering the sealing material 17. When the container 24 is made of metal, the withstand voltage can be improved, and an insulating film such as an oxide film formed on the surface of the container 24 can be omitted to enable use as it is. Here, although the sealing material 17 flows between the inside of the brim portion 24b of the storage container 24 and the solid-state imaging device 11 slightly floats, the sealing material 17 is pressed down so that the solid-state imaging device 11 does not float. It is needless to say that may be injected.

The solid-state image sensor 11 and the optical glass 13 are joined to the inner and outer surfaces of the flanges 24a and 24b of the container 24 so that the relative positional relationship is determined. Of the space 18 from the light receiving surface 11a to the inner surface of the optical glass 13
The distance can be set to an arbitrary distance by adjusting the thickness of the collar portion 24b of the solid-state imaging device 11.
The precision of the optical axis a can be set by the processing precision.

Further, the second positioning step and the second
In the joining step, the optical axis of the light receiving surface 11a of the solid-state imaging device 11 is set by direct contact with the inner surface of the brim portion 24b of the storage container 24, so that the solid-state imaging device 11 is held and the sealing material 17 is injected. Can be separately performed, and the adjustment time can be shortened and the assembly tact can be shortened as compared with the above-described embodiment.

In the manufacturing process of the solid-state imaging device 20, after the solid-state imaging device 11 is joined to the storage container 24, the solid-state imaging device 11 is detached from the pedestal 306, and as shown in FIG. The adhesive 15 is applied to the outer surfaces of the portions 24a and 24b to position and fix and bond the optical glass 13 (first positioning step, first bonding step). In this manufacturing step, the order of the first and second positioning steps and the first and second bonding steps is reversed with respect to the above-described embodiment, but it goes without saying that the steps may be similarly performed.
Further, it may be performed at the same time, and cured and joined at the same time.

As described above, in this embodiment, in addition to the functions and effects of the above-described embodiment, the housing 24 is positioned by directly contacting the periphery of the light receiving surface 11 a of the solid-state imaging device 11 and the inner surface of the optical glass 13. So you can
The distance between the solid-state imaging device 11 and the optical glass 13 can be set arbitrarily, and can be set with high precision by the processing accuracy. Also, the optical axis accuracy of the light receiving surface 11a of the solid-state imaging device 11 can be improved. Also, the processing accuracy of the container 24 can be set with high accuracy.

Further, the solid-state image sensor 11 is only mounted on the collar 24b of the container 24 by its own weight, so that the periphery of the light receiving surface 11a of the solid-state image sensor 11 and the inner surface of the collar 24b of the container 24 are formed. A small insulating / sealing film can be formed by injecting the sealing material 17 into the gap. Therefore, the solid-state imaging device 11 and the container 24 can be firmly joined to improve the sealing quality, and the dielectric strength can be ensured, and the limitation on the material of the container 24 can be eliminated. Reduction and improvement in reliability can be achieved.

As another aspect of the present embodiment, similarly to the above-described embodiment, a square corner is left in the container 24, but as shown in FIG. R processing may be performed to reduce the diagonal distance to achieve further miniaturization. On the other hand, when assembling and manufacturing a solid-state imaging device that does not care about the size of the external shape, a male screw that can be screwed to a female screw of the external device may be formed on the outer surface of the storage container.

Next, FIG. 15 is a view showing a third embodiment of the solid-state imaging device and the method of manufacturing the same according to the present invention. In addition, since the present embodiment is configured substantially in the same manner as the above-described embodiment, the same components are denoted by the same reference numerals, and the characteristic portions will be described.

In FIG. 15, the insulator 31 is, for example,
The solid-state imaging device 11 is made of an insulating material such as a microlens (not shown) that faces the light-receiving surface 11a, and is disposed on the edge side of the bump 16 at the outer corner of the solid-state imaging device 11. For example, the solid-state imaging device 11 and the container 1
In the case where the gap formed between the first and second layers 4 and 24 is as described in the above embodiment, the thickness (height) is 10 μm or more.
What is necessary is just to form.

Even when the lead wire 12 is connected to the solid-state image sensing device 11 via the bump 16 and then bent and formed as it is, the insulator 31 is connected to the bent portion of the lead wire 12 and the solid-state image sensing device 11. The lead wire 12 is connected to the solid-state imaging device 1 without contacting or short-circuiting with the outer peripheral corner of the solid-state imaging device 11.
It can be led to a state extending near the side surface of one.

For this reason, the bending step in the assembling / manufacturing method described in the above embodiment can be a general operation without bending the bent portion of the lead wire 12.

As described above, in this embodiment, in addition to the operation and effect of the above-described embodiment, it is possible to simplify the assembling and manufacturing process, and it is not necessary to form a bent portion in the lead wire 12. Therefore, restrictions such as hardness (strength) of the lead wire 12 can be relaxed.

Next, FIGS. 16 to 18 are views showing a fourth embodiment of the solid-state imaging device and the method of manufacturing the same according to the present invention. In addition, since the present embodiment is configured substantially in the same manner as the above-described embodiment, the same components are denoted by the same reference numerals, and the characteristic portions will be described.

In FIG. 16 and FIG.
2 is formed by forming a thick film of a conductive material on a TAB film insulating film 19 so as to be supplied by a film carrier method in the connection step in the same manner as in the above-described embodiment. A portion corresponding to the outer peripheral corner of the image pickup device 11 is formed to have a narrow width and the bent portion 42a is formed into a constricted shape so that the bent portion 42a has a lower strength than other portions and is bent preferentially.

For this reason, in the bending step, the lead wire 4
2 is formed by bending the bent portion 42
As a is preferentially bent, the lead wire 12 is guided to a state extending near the side surface of the solid-state imaging device 11 without contacting and short-circuiting with the outer peripheral corner of the solid-state imaging device 11 as shown in FIG. In the second bonding step, the sealing material 17 is included.

Thus, the bending step in the assembling / manufacturing method described in the above embodiment can be a general operation without bending the bent portion of the lead wire 12. Further, by forming the bent portion 42a, the bending stress generated when the lead wire 42 is bent can be relaxed, and the lead wire 42 can be easily formed into a designed shape. Can be reduced.

The lead wire 42 is connected to the bump 16 when, for example, the gap formed between the solid-state imaging device 11 and the housings 14 and 24 is as described in the above embodiment. When the tip is about 100 μm wide, the edge of the outer peripheral corner of the solid-state imaging device 11 is about 7 μm from the edge.
A bent portion 42a having a width of about 40 μm extending about 50 μm from a position separated by 5 μm is formed, and the bent portion 42a is formed.
The rear end side may be reinforced by setting the width to be equal to or larger than the width of the front end side.

As described above, in this embodiment, in addition to the functions and effects of the above-described embodiment, it is possible to simplify the assembling and manufacturing process, and it is not necessary to form a bent portion in the lead wire 12. Therefore, restrictions such as hardness (strength) of the lead wire 12 can be relaxed.

As another mode of the present embodiment, as shown in FIG.
It is needless to say that the present invention may be applied to a mesa bump type lead wire integrally formed.

Next, FIG. 20 is a diagram showing a fifth embodiment of the solid-state imaging device and the method of manufacturing the same according to the present invention. In this embodiment, the characteristic portions will be described by taking the case of using the first embodiment as an example.

In FIG. 20, when the lead wire 12 connected to the solid-state imaging device 11 is bent and pulled out to the back side of the light receiving surface 11a, the solid-state imaging device 10
The insulating film 19 holding the second 2 is assembled and manufactured using a TAB film set so as to be exposed to the outside from the container 14 (for example, about 0.3 mm in the dimensions of the above-described embodiment). After assembling through the process, the solid-state imaging device 11 is attached to one end side of the narrowly formed circuit board 51 so that the light receiving surface 11a is at a right angle, and the lead wire 12 bent to an electrode pad (not shown) is attached. Are electrically connected by soldering or the like.

Therefore, in this solid-state imaging device 10,
The lead wire 12 exposed to the outside from the housing container 14 can be easily bent and bent, and can be connected to the circuit board 51 without being disturbed by the insulating film 19. If there is a distance from the tip of the lead wire 12 connected to the solid-state imaging device 11 to the insulating film 19 as in the present embodiment, the lead wire 1 is set according to the distance.
It is preferable that the lead wire 12 itself is formed thicker and wider to reinforce the lead wire 12 so that the position of the distal end of the lead wire 2 does not vary during the connection work or the like.

As described above, in the present embodiment, the solid-state imaging device 10 which is manufactured at a low cost and with high reliability and small in size by the above-described embodiment can be easily replaced with a small camera head such as an endoscope. Can be attached to

As another aspect of the present embodiment, as shown in FIG. 21, the lead wires 12 of the solid-state imaging device 10 manufactured similarly are easily bent again so as to be separated from each other, and the solid-state imaging device 11 After being expanded so as to be parallel to the back surface of the light receiving surface 11a (re-bending step), the circuit board 52
The solid-state imaging device 11 is installed on one side in a horizontal position, and the rear ends of the lead wires 12 are electrically connected by soldering or the like. At this time, the insulating film 19 is interposed between the lower end portion of the container 14 and the lead wire 12 to ensure insulation.

Further, as shown in FIG.
Similarly, one side of the light receiving surface 11a of the solid-state imaging device 11 of the lead wire 12 exposed from the other side is easily bent and expanded again so as to be parallel to the back surface of the solid-state imaging device 11, while the other side is opened. The side lead wire 12 is easily bent again from one end side of the circuit board 53 to the back side (re-bending step), and then the solid-state imaging device 11 is positioned horizontally at one end of the circuit board 53. The rear ends of the lead wires 12 are electrically connected to both sides of the circuit board 53 by soldering or the like.

As described above, the solid-state imaging device 10 can be commonly used even when the mounting form to the circuit board is different, so that mass production can be achieved and the cost can be further reduced. The solid-state imaging device according to the present invention is applicable not only to a CCD but also to a photoelectric conversion device such as a CMOS.

[0095]

As described above, the present invention provides a solid-state imaging device by forming a bent portion or the like easily processed into a curved shape on a lead wire connecting a tip portion to an electrode of a solid-state imaging device. The lead wire can be extended along the vicinity of the side surface of the solid-state imaging device without fear of touching the outer peripheral corner of the device, and the lead wire can be used alone without causing a short circuit except at the electrodes. Can be connected to Therefore, it is possible to freely design the connection of the lead wires without reinforcement such as joining and fixing to other members. As a result, it is possible to provide a small, highly reliable and inexpensive solid-state imaging device.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a first embodiment of a solid-state imaging device and a method for manufacturing the same according to the present invention, and is a top view illustrating the configuration thereof.

FIG. 2 is a vertical sectional view taken along the line AA in FIG.

FIG. 3 is a vertical sectional view taken along line BB in FIG.

FIG. 4 is a process drawing illustrating a manufacturing method thereof.

FIG. 5 is a process drawing following FIG. 4;

FIG. 6 is a process drawing following FIG. 5;

FIG. 7 is a plan view illustrating one bonding step.

FIG. 8 is a diagram illustrating a solid-state imaging device according to a second embodiment of the present invention and a method for manufacturing the same, and is a top view illustrating the configuration thereof.

9 is a vertical sectional view taken along the line AA in FIG.

FIG. 10 is a vertical sectional view taken along line BB in FIG. 8;

FIG. 11 is a transparent top view of the solid-state imaging device for explaining the bonding state.

FIG. 12 is a process diagram illustrating a manufacturing method thereof.

FIG. 13 is a partially enlarged longitudinal sectional view illustrating one joining step.

FIG. 14 is a cross-sectional view showing another embodiment.

FIG. 15 is a view showing a third embodiment of the solid-state imaging device and the method for manufacturing the same according to the present invention, and is a longitudinal sectional view illustrating the configuration of a main part thereof.

FIG. 16 is a diagram showing a fourth embodiment of the solid-state imaging device and the method for manufacturing the same according to the present invention, and is a longitudinal sectional view illustrating the configuration of the main part thereof.

FIG. 17 is a partially enlarged plan view illustrating the configuration.

FIG. 18 is a partially enlarged side view illustrating the configuration.

FIGS. 19A and 19B are diagrams showing other aspects, in which FIG. 19A is a plan view and FIG. 19B is a side view.

FIG. 20 is a view showing a solid-state imaging device according to a fifth embodiment of the present invention and a method for manufacturing the same, and is a longitudinal sectional view illustrating the configuration thereof.

FIG. 21 is a longitudinal sectional view showing another mode.

FIG. 22 is a longitudinal sectional view showing another embodiment.

FIG. 23 is a view showing a conventional technique, and is a top view for explaining the configuration thereof.

24 is a vertical sectional view taken along line AA in FIG. 23.

FIG. 25 is a partially enlarged longitudinal sectional view illustrating the problem.

FIG. 26 is a process chart illustrating a part of the manufacturing method.

FIG. 27 is a process diagram illustrating another manufacturing method.

FIG. 28 is a top view illustrating the bonding step.

FIG. 29 is a diagram showing another related art, and is a top view for explaining the configuration thereof.

30 is a vertical sectional view taken along line AA in FIG. 29.

[Explanation of symbols]

 10, 20 Solid-state imaging device 11a Light receiving surface 11b Electrode pad 12, 42 Lead wire 13 Optical glass 14, 24 Housing 14a, 24a, 24b Collar 15 Adhesive 16, 46 Bump 17 Sealant 18 Space 19 Insulation film 31 Insulation Body 42a Bend 51-53 Circuit board

Claims (16)

[Claims] 1. A lead wire for extracting an electric signal photoelectrically converted by being connected to an electrode drawn from a light receiving surface of a solid-state imaging device is bent along the vicinity of a side surface of the solid-state imaging device so as to be bent. A solid-state imaging device having a structure to be drawn out from a back side, wherein the lead wire has a bent portion bent at a position corresponding to a corner from the light-receiving surface side to the side surface of the solid-state imaging device. A solid-state imaging device characterized by the above-mentioned. 2. The solid-state imaging device according to claim 1, wherein the bent portion has a curved shape that is curved in a direction away from the light receiving surface side of the solid-state imaging device. 3. The connection between the electrode of the solid-state imaging device and the end of the lead wire for extracting the electric signal, wherein the connection structure has no connection bump. The solid-state imaging device according to claim 1. 4. A lead wire for extracting an electric signal that has been photoelectrically converted by being connected to an electrode drawn from a light receiving surface of the solid-state imaging device is bent along the vicinity of a side surface of the solid-state imaging device, and a back side of the light-receiving surface. A solid-state imaging device having a structure that extends from the light-receiving surface of the solid-state image sensor to a corner portion extending from the light-receiving surface side to the side surface of the solid-state image sensor. A solid-state imaging device, wherein the insulator is interposed between a bent portion of the lead wire bent at a position where the lead wire is bent and the peripheral portion of the solid-state imaging device. 5. A lead wire for extracting an electric signal that has been photoelectrically converted by being connected to an electrode drawn from a light receiving surface of the solid-state imaging device is bent along the vicinity of a side surface of the solid-state imaging device, and a back side of the light-receiving surface. A solid-state imaging device having a structure extending from the light-receiving surface side to the side surface of the solid-state imaging device at a position corresponding to a corner from the light-receiving surface side to the side surface. The solid-state imaging device is characterized in that the bent portion is bent near the corner of the solid-state imaging device so as to be in non-contact. 6. The solid-state imaging device according to claim 5, wherein the bent portion of the lead wire is formed to be narrower than the bent portion to reduce the strength. 7. The solid-state imaging device according to claim 1, wherein said lead wire is made of copper or aluminum. 8. The method for manufacturing a solid-state imaging device according to claim 1, wherein a connecting step of connecting a tip end of the lead wire to an electrode of the solid-state imaging device; A bending step of bending the connected lead wire along the vicinity of the side surface of the solid-state imaging device, and a direction in which the bent portion bent at a position corresponding to the outer peripheral corner of the solid-state imaging device is separated from the light receiving surface. A bending step of bending, wherein in the bending step and the bending step, the solid-state imaging device is held by a first holding unit, and then the lead wire is bent along a vicinity of a side surface of the solid-state imaging device. And then
The rear end side of the lead wire is held by a second holding means, and thereafter, the first and second holding means are relatively moved in a direction approaching each other, so that the bent portion and the curved portion of the lead wire are moved. A method for manufacturing a solid-state imaging device, comprising forming a portion. 9. The method of manufacturing a solid-state imaging device according to claim 8, wherein the bending of the lead wire is insufficient when the electrode of the solid-state imaging device and the lead wire tip are insufficiently joined. The bending stress generated in the process is larger than the connection strength between the electrode of the solid-state imaging device and the tip of the lead wire, and the lead wire designed to break the joint at the tip of the lead wire is used. A method for manufacturing a solid-state imaging device, comprising: 10. The method for manufacturing a solid-state imaging device according to claim 1, wherein a connecting step of connecting a tip end of the lead wire to the electrode of the solid-state imaging device. And a bending step of bending the lead wire connected to the electrode along the vicinity of a side surface of the solid-state imaging device. In the connecting step, a bump (bump) for connecting to the electrode of the solid-state imaging device is provided. Bump), and preparing the lead wire formed in advance at the tip portion. 11. The method for manufacturing a solid-state imaging device according to claim 1, wherein a connecting step of connecting a tip of the lead wire to the electrode of the solid-state imaging device. And a bending step of bending the lead wire connected to the electrode along the vicinity of a side surface of the solid-state imaging device. In the connecting step, a bump (bump) for connecting to the tip of the lead wire is provided. Bump) is prepared on the electrode in advance, and the solid-state imaging device is prepared. 12. The fabrication of the solid-state imaging device according to claim 8, wherein in the connecting step, the electrode of the solid-state imaging device and the tip of the lead wire are individually connected. Method. 13. The solid-state imaging device according to claim 8, wherein in the connecting step, the electrodes of the solid-state imaging device and the tips of the lead wires are connected together. Method. 14. In the connecting step, TAB (Tape Aut)
12. The method for manufacturing a solid-state imaging device according to claim 8, wherein the lead wire formed on an omated bonding film is used. 15. In the connecting step, a position of the insulating film of the TAB film holding the lead wire is exposed outside the side surface of the solid-state imaging device when bent in the bending step. The TA set
The method for manufacturing a solid-state imaging device according to claim 14, wherein a B film is used. 16. A re-bending step for re-bending the lead wire bent along the vicinity of the side surface of the solid-state imaging device in the bending step so as to be parallel to the light receiving surface of the solid-state imaging device. The method for manufacturing a solid-state imaging device according to claim 15, wherein: