JPH08148666A - Solid image pickup device, and its manufacture - Google Patents

Abstract

PURPOSE: To provide a solid image pickup device which can easily attain the downsizing while maintaining image pickup property and reliability. CONSTITUTION: The electrode pad 4 fitted with a bump 10 provided at the margin of the image pickup region 3 of a solid image pickup element chip 1 and the lead 13 of a flexible board 6 are connected with each other, using an anisotropic conductive film 5. A transparent cap 8 is fixed on the flexible board 6, using adhesive resin 7. For the flexible board 6, the section corresponding to the image pickup region 3 is punched, and space 14 is made between the solid image pickup element cap 1 and the cap 8. This space 14 is sealed with an anisotropic conductive film 5 and adhesive resin 7.

Description

Detailed Description of the Invention

[0001]

The present invention relates to, for example, a CCD.
The present invention relates to a solid-state imaging device applicable to an area sensor or the like using a (Charge Coupled Device).

[0002]

2. Description of the Related Art Conventionally, an ultra-small solid-state image pickup device has been used for applications such as an endoscope. 18 to 20 show
1 illustrates a configuration of a conventional solid-state imaging device. As shown in the figure, in the conventional solid-state imaging device, the imaging area 2
Electrode pads 22 and bumps 23 for connection are provided on both sides of the solid-state imaging device chip 21 on which 0 is formed, and TAB (Tape Automated
Bonding) The lead wire 25 of the tape 24 is connected. Then, a transparent cap 26 made of, for example, glass or the like is placed on the solid-state image pickup device chip 21, and an adhesive 27 made of a transparent resin is filled between the solid-state image pickup device chip 21 and the cap 26 to perform packaging. I am trying to do it. In this case, the solid-state imaging device chip 21
Filling the space between the cap 26 and the cap 27 with the adhesive 27 is
This is to prevent the intrusion of water and dust and ensure the reliability of the solid-state image sensor.

[0003]

By the way, as shown in FIG. 20, an on-chip microlens 29 for condensing light is generally provided on the upper surface of a photodiode 28 such as a CCD area sensor in order to improve sensitivity. For example, it is formed using an organic material having a refractive index of 1.5 to 1.6.

However, in the case of the conventional example having such a structure, since the adhesive 27 adheres to the upper surface of the on-chip microlens 29, the resin of the adhesive 27 and the on-chip microlens 29 are formed. The difference in refractive index of organic materials is smaller than that of air, and as a result,
The light condensing rate is lowered and the size can be reduced, but there is a problem that the sensitivity and smear characteristics are deteriorated as compared with a package having a hollow structure using, for example, ceramics.

The present invention has been made in consideration of the above problems of the conventional technique, and provides a solid-state image pickup device and a method of manufacturing the same which can easily achieve miniaturization while maintaining the image pickup characteristics and reliability. The purpose is to provide.

[0006]

A solid-state image pickup device according to the present invention comprises a solid-state image pickup element chip having a connection portion at a peripheral portion of an image pickup area, and a transparent cap for protecting the solid-state image pickup element chip. A lead for connecting to an external terminal is connected to the above-mentioned connecting portion, and a peripheral portion of the above-mentioned imaging region and the above-mentioned cap are formed so that an airtight space is formed near the above-mentioned imaging region. The space between them is sealed.

A solid-state image pickup device according to the present invention has a solid-state image pickup element chip provided with a connecting portion at a peripheral portion of an image pickup area and a transparent cap for protecting the solid-state image pickup element chip, and an external terminal is provided. A lead for connection is connected to the connecting portion, an insulating film is formed on a portion of the lead corresponding to an end edge of the solid-state image pickup device chip, and a gap between the peripheral portion of the image pickup region and the cap is sealed. It is a thing.

Here, the lead can be connected to the connecting portion by the anisotropic conductive film.

It is also possible to connect a lead with a carrier tape to the connecting portion.

Further, the solid-state image pickup device chip and the cap can have substantially the same area.

Furthermore, it is also possible to have an on-chip microlens above the image pickup area.

On the other hand, in the method for manufacturing a solid-state image pickup device according to the present invention, a lead for external terminal connection is connected to a connecting portion provided on the peripheral portion of the image pickup region of the solid-state image pickup element chip, and the lead is provided near the above-mentioned image pickup region. A transparent cap for protecting the solid-state image pickup element chip is arranged so as to form a space, and a step of sealing between the cap and the peripheral portion of the image pickup area is included.

In the case of the solid-state image pickup device according to the present invention, the space between the peripheral edge of the solid-state image pickup element chip and the cap is sealed so that an airtight space is formed near the image pickup region. It is possible to prevent moisture, dust, and the like from entering the space, and prevent dew condensation on the imaging area and deterioration of the imaging characteristics.

Further, in the solid-state image pickup device according to the present invention, since the insulating film is formed on the portion of the lead corresponding to the edge of the solid-state image pickup element chip, the leads and the edge of the solid-state image pickup element chip are electrically short-circuited. Is prevented.

Here, if the leads are connected to the connecting portions by the anisotropic conductive film, these connections and the sealing between the peripheral portion of the image pickup region and the cap are performed at the same time.

If the leads with the carrier tape are connected to the connecting portions, the leads will not come apart or come into contact with each other when connecting to the external terminals.

Further, if the solid-state image pickup element chip and the cap have substantially the same area, a solid-state image pickup device having a size substantially equal to the size of the solid-state image pickup element chip can be easily obtained.

Furthermore, if the present invention is applied to a solid-state image pickup device having an on-chip microlens L above the image pickup area, since the upper surface of the on-chip microlens L directly contacts air, the solid-state image pickup element and the cap are As compared with the conventional example in which an organic material is filled in between, the difference in the refractive index at the lens interface becomes large, and the light collection rate is improved.

On the other hand, in the method of manufacturing the solid-state image pickup device according to the present invention, the lead for external terminal connection is connected to the connecting portion 4 provided at the peripheral portion of the image pickup region of the solid-state image pickup element chip 1 to obtain the image pickup region. By disposing a transparent cap for protecting the solid-state image sensor chip so that a predetermined space is formed in the vicinity of the space, and sealing between the cap and the peripheral edge of the above-mentioned imaging region, a simple process can be performed. Thus, a solid-state image pickup device having an airtight space near the image pickup area of the solid-state image pickup element chip can be obtained.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a solid-state image pickup device and a method of manufacturing the same according to the present invention will be described below with reference to the drawings.

FIG. 1 is an exploded perspective view showing a schematic structure of the solid-state image pickup device of this embodiment. As shown in the figure, the solid-state imaging device of this embodiment has a solid-state imaging element chip (hereinafter simply referred to as “chip”) 1 similar to that of the conventional example. That is, in this chip 1, an image pickup region 3 made of CCD is formed in the central portion of a quadrangular substrate 2, and an electrode pad 4 made of, for example, Al is provided as a connecting portion on the peripheral portion thereof. In this embodiment, a plurality of electrode pads 4 are arranged on both sides of the long side of the image pickup area 3.

Then, as shown in FIG. 1, an anisotropic conductive film 5, a flexible substrate 6 as a carrier tape, an adhesive resin 7 and a cap 8 are sequentially mounted on the chip 1 by a method described later. The solid-state imaging device 1 as shown in FIGS. 2 to 7 is obtained.

Here, FIG. 2 shows the solid-state image pickup device 1 of this embodiment.
3 is a plan view of the solid-state imaging device 1 of the present embodiment in the direction of the arrow Y in FIG. 1, FIG. 4A is a cross-sectional view taken along the line AB of FIG. 2, and FIG. 4B is an enlarged view of a portion E in FIG. 4A. FIG. 4C is an enlarged view of part F in FIG. 4A, and FIG. 5 is a solid-state imaging device 1 of this embodiment.
6 is a sectional view taken along the line C-D of FIG. 2, and FIG. 7 is a view of the solid-state imaging device 1 of the present embodiment as viewed in the X direction in FIG.

As shown in FIG. 4C, an on-chip microlens L made of a transparent organic material (for example, polyimide) is formed on the upper surface of the photodiode 9 in the image pickup area 3 of the chip 1. Further, as shown in FIG. 4B, bumps (for example, Au ball bumps) 10 for connecting to the anisotropic conductive film 5 are formed on each electrode pad 4.

The anisotropic conductive film 5 has almost the same size as the chip 1, and the portion corresponding to the image pickup region 3 is punched out. The anisotropic conductive film 5 includes conductive particles 12 dispersed in an adhesive 11 made of resin,
It has a thickness of several tens of μm. The anisotropic conductive film 5
May be adhered to the flexible substrate 6 in advance.

The flexible substrate 6 is made of a resin (for example, polyimide) having a thickness of several tens of μm and is formed in a long rectangular shape. Then, as shown in FIG.
The portion corresponding to the image pickup area 3 is punched out. Figure 5
Further, as shown in FIG. 6, the flexible substrate 6 is formed such that the length (width) of its short side portion is substantially the same as or slightly shorter than the length of the long side portion of the chip 1. Then, the flexible substrate 6 is stacked so that the long side portion of the chip 1 is orthogonal to the long side portion of the flexible substrate 6.

As shown in FIG. 5, on one surface of the flexible substrate 6, a plurality of leads 13 for connecting external terminals are formed in parallel along the longitudinal direction thereof. This lead 13
Is composed of a copper foil plated with Au, Sn, or the like. Further, the interval between the adjacent leads 13 is formed to be the same as the interval between the electrode pads 4 formed on the chip 1.

A cap 8 is adhered onto the flexible substrate 6 with an adhesive resin 7 such as an epoxy resin. The thickness of the adhesive resin 7 is several μm to several tens of μm,
It is applied on the flexible substrate 6 or the cap 8. The adhesive resin 7 may be either a thermosetting type or an ultraviolet curing type.

The cap 8 is made of a transparent material such as optical glass or plastic and has a size substantially the same as the chip 1.

Next, an example of a method of manufacturing the solid-state image pickup device of this embodiment will be described. First, the anisotropic conductive film 5 is sandwiched between the chip 1 having the above structure and the flexible substrate 6, and thermocompression bonding is performed under the conditions of, for example, 160 °, 40 seconds, and 50 Kgf / cm ² . In this case, the lead 13 of the flexible substrate 6 and the bump 10 of the chip 1 are aligned using the gang bonder or the like used in the inner lead bonding of the TAB, and the anisotropic conductive film 5 is formed using the heat block. Uniformly heats and pressurizes the entire surface. As a result of such thermocompression bonding, for example, as shown in FIG. 4B, the conductive particles 12 in the anisotropic conductive film 5 come into contact with the leads 13 of the flexible substrate 6 and the bumps 13 of the chip 1, and these are electrically connected. To be done.

Thereafter, the cap 8 is placed on the flexible substrate 6 via the adhesive resin 7, and the adhesive resin 7 is cured by thermocompression bonding or irradiation of ultraviolet rays to fix the cap 8 on the flexible substrate 6. When thermocompression bonding is performed, it is necessary to perform the pressure bonding at a temperature (for example, 160 ° C. or lower) at which the color filter (not shown) of the chip 1 does not deteriorate.

In the case of the solid-state image pickup device of this embodiment manufactured by the above-mentioned method, as shown in FIGS. 4A and 6, between the upper surface of the image pickup region 3 of the chip 1 and the cap 8 is several tens to several hundreds tens. A μm gap is formed. Then, as shown in FIGS. 3 and 6, the space 14 formed between the flexible substrate 6 and the chip 1 is sealed with the anisotropic conductive film 5 and the adhesive resin 7 over the entire circumference.

In the solid-state image pickup device of the present embodiment having such a configuration, since the upper surface of the on-chip microlens L on the photodiode 9 of the chip 1 is in direct contact with the air, the difference in refractive index at the interface between the lenses. Can be made large, and as a result, the same sensitivity and smear characteristics as those of the ceramic package having a hollow structure can be obtained.

Further, in the solid-state image pickup device of the present embodiment, the space 14 near the image pickup area 3 of the chip 1 is completely sealed and moisture and dust are prevented from entering the space 14, It is possible to prevent the dew condensation on the imaging region 3 and the deterioration of the imaging characteristics to ensure the reliability.

Further, since the cap 8 can be made substantially the same size as the chip 1, the size of the package can be reduced to about the chip size.

In addition, according to the manufacturing method of the present embodiment, a solid-state image pickup device having the airtight space 14 near the image pickup region 3 of the chip 1 can be obtained by a simple process, so that the image pickup characteristic and reliability can be improved. A high solid-state imaging device can be manufactured at low cost.

As described above, in the solid-state image pickup device of this embodiment, the leads 13 of the flexible substrate 6 and the bumps 10 on the electrode pads 4 of the solid-state image pickup element chip 1 are connected via the anisotropic conductive film 5. . When the thermo-compression bonding of the anisotropic conductive film 5 is performed, the bumps 10 on the electrode pads 4 are electrically connected to the leads 13 of the flexible substrate 6 through the conductive particles 12 as well. If the pressure at this time is high or the flexible substrate 6 is warped, the edge portion (so-called edge portion) of the solid-state imaging element chip 1 and the lead 13 may come into contact with each other directly or through the conductive particles 12.

The edge portion of the solid-state image pickup device chip 1 has a dicing straight, which is a cutting margin during dicing, and this portion is, in most cases, Si itself. Since the Si portion of the solid-state image pickup device chip 1 is normally applied with the substrate potential, if this edge portion comes into contact with the lead 13 connected to the electrode pad 4, an electrical short circuit is generated and it becomes a defective product. Will end up.

8 to 10 show another embodiment of the present invention in which the above points are improved. 8 is a plan view of the solid-state image pickup device of this embodiment, FIG. 9 is a rear view, and FIG. 10 is a cross-sectional view of a main part.

The solid-state image pickup device of this embodiment is the same as the solid-state image pickup device of the embodiment shown in FIGS.
A thin insulating film (for example, a thin film) is formed on the lead 13 of the flexible substrate 6 in a portion corresponding to an edge of the solid-state imaging device chip 1, more specifically, a region including the edge, that is, a region extending from the chip edge to both sides thereof. (Polyimide film, etc.) 31 is formed to prevent contact between the chip insulation and the leads 13 of the flexible substrate 6.

In this case, a thin insulating film is formed on the lead 13 in a portion corresponding to the region including the chip edge of the flexible substrate 6, and the anisotropic conductive film 5 is formed thereon.

As shown in FIGS. 8 and 9, the insulating film 31 of this example is formed in a strip shape over the entire width of the flexible substrate 6 so as to correspond to both edges of the chip 1.

At the time of forming the insulating film 31, a photoresist mask having an opening for forming the insulating film 31 is formed on the surface of the flexible substrate 6 on the lead 13 side, and a liquid insulating substance is poured into the opening. The insulating film 31 can be formed on a desired region by curing (for example, ultraviolet irradiation curing, heat curing, etc.) and then removing the photoresist mask.

Here, the height of the bump 10 is, for example, 30 μm.
m and the thickness of the anisotropic conductive film 5 is 25 μm, the insulating film 31 needs to be at least 10 μm or less. When the insulating film 31 has a thickness of more than 10 μm, the thickness of the insulating film 31 hinders the pressure bonding between the bump 10 and the lead 13.
On the contrary, it causes an open defect. Also, the insulating film 3
In No. 1, heat resistance of at least the pressure bonding temperature is required.
In this way, good connection can be achieved without the leads 13 of the flexible substrate 6 and the edges of the chip coming into contact with each other. Other configurations in FIGS. 8 to 10 are similar to those of the solid-state imaging device in FIGS. 1 to 4 described above, and therefore, the same reference numerals are given and duplicate description is omitted.

According to the solid-state image pickup device of this embodiment, the lead 1 of the portion corresponding to the chip edge of the flexible substrate 6 is used.
Since the insulating film 31 is formed on the insulating layer 3, even if the applied pressure is large or the flexible substrate 6 is warped, the insulating film 31 makes direct contact between the leads 13 of the flexible substrate 6 and the edge of the chip or different. Electrical contact between the conductive film 5 and the anisotropic conductive film 5 is prevented, and the reliability of the solid-state imaging device can be improved.

11 to 13 show still another embodiment of the present invention. In this example, the flexible substrate 6 is divided into two parts, and the respective flexible substrates 6A and 6B are arranged only on both sides of the long side where the electrode pad 4 of the solid-state imaging device chip 1 is present, and other peripheral parts of the chip, That is, in the short side portion, the transparent cap 8 and the chip 1 are mechanically joined by the direct adhesive resin (the adhesive resin formed in the frame shape shown in FIG. 1) 7. Also in this example, the flexible substrate 6A corresponding to the region including the edge of the solid-state image sensor chip 1,
A thin insulating film 31 is formed on the lead 13 of 6B.

Since the other structure is the same as that of FIGS. 1 to 4, the corresponding portions are designated by the same reference numerals and the duplicate description thereof will be omitted.

Also in the solid-state image pickup device of this embodiment,
The space 14 near the imaging region 3 of the chip 1 is completely hermetically sealed, and a hollow structure package is realized. And
Also in this example, since the insulating film 31 is formed on the lead 13 corresponding to the edge of the chip 1, an electrical short between the edge of the chip 1 and the lead 13 of the flexible substrate 6 is prevented, and the reliability is high. A solid-state imaging device is obtained.

Although the insulating film 31 in the above example is formed in a strip shape over the entire width of the flexible substrate 6 so as to cover the entire chip edge, in addition, as shown in FIG. Insulating film 31 only on top
Even if it is formed, it can sufficiently fulfill its role.

The present invention can also be applied to the case where a TAB tape is used as the flexible substrate 6. In this case, a method in which the TAB tape and the bumps of the solid-state imaging element chip are directly thermocompression bonded, a method in which the TAB tape is connected to the solid-state imaging element chip via an anisotropic thin film, and the like can be considered.

The present invention is not limited to the above embodiments, but various modifications can be made.

For example, as shown in FIG. 15, by assembling the solid-state imaging device and then bending and fixing the flexible substrate 6 at a substantially right angle near the end of the chip 1, the size of the solid-state imaging device can be further reduced. become. In this case, the flexible substrate 6 is preferably made of a material that can be easily bent.

When the flexible substrate 6 is folded and then returned to its original position, the ends of the chip 1 and the flexible substrate 6 are fixed with an adhesive as shown in FIG. As shown in FIG. 6, if the leads 13 are connected to each other by using the connecting member 16 made of, for example, copper at the portion to be bent, the flexible substrate 6 can be bent at a substantially right angle. These examples of FIG. 15, FIG. 16 and FIG.
Needless to say, the present invention can also be applied to the case of providing.

Furthermore, according to the embodiment described above, the chip 1
Since the gap between the upper surface of the cap 8 and the cap 8 is very narrow, such as several tens μm ± several μm, and can be designed with high precision, an optical low-pass filter, a microlens, an infrared cut filter, etc. are used instead of the cap 8 for the flexible substrate 6.
It can also be glued on. As a result, it is possible to achieve miniaturization when mounted on, for example, a video camera.

Furthermore, in the above-mentioned embodiment, the flexible substrate 6 is used for connection, but the present invention is not limited to this, and other leads with carrier tape may be used, or the lead wires may be directly connected. It can also be connected to the bumps of the chip 1. However, if the flexible substrate 6 is used, manufacturing and wiring are extremely easy, and contact between the leads 13 is prevented, so that there is an advantage that reliability is improved.

On the other hand, the manufacturing method is not limited to the above-mentioned embodiment, and various changes can be made. For example, the semi-cured anisotropic conductive film 5 is formed on each surface of the flexible substrate 6.
By sticking the adhesive resin 7 and the adhesive resin 7 and punching them all at once, the number of steps can be reduced. Furthermore, if the flexible substrate 6 is placed on the chip 1, and the cap 8 is placed on the chip 1 to perform thermocompression bonding, sealing can be performed in a single pressure bonding step, and the number of man-hours can be significantly reduced. You can It is also possible to use the anisotropic conductive film 5 instead of the adhesive resin 7 for adhesion.

[0057]

As described above, in the solid-state image pickup device according to the present invention, between the peripheral portion of the image pickup region and the cap so that an airtight space is formed near the image pickup region of the solid-state image pickup element. By sealing the above, it is possible to prevent dew condensation on the image pickup area and deterioration of the image pickup characteristic to ensure reliability.

Further, by forming an insulating film on a portion of the lead which is connected to the connection portion at the peripheral portion of the image pickup region and which corresponds to the edge of the solid-state image pickup element chip, the lead and the solid-state image pickup element chip end are formed. An electrical short with the edge is prevented, and further reliability can be ensured.

In this case, if the lead is connected to the connecting portion by the anisotropic conductive film, the connection and the sealing between the peripheral portion of the imaging region and the cap are performed at the same time, which facilitates manufacturing. And reduction of man-hours.

Further, if the leads with the carrier tape are connected to the connecting portions, it is possible to prevent loosening of the leads and contact between the leads when connecting to the external terminals, so that the reliability when mounting on the substrate is improved. It is possible to secure the sex.

Further, if the solid-state image pickup element chip and the cap have substantially the same area, a solid-state image pickup device having a chip size substantially equal to that of the chip can be easily obtained, so that the size of the device can be reduced.

Furthermore, when the present invention is applied to a solid-state image pickup device having an on-chip microlens above the image pickup region, it is possible to collect light more than the conventional example in which an organic material is filled between the solid-state image pickup element and the cap. Since the light efficiency can be improved, it is possible to obtain a small-sized solid-state image pickup device having the same image pickup characteristics as the solid-state image pickup device using the ceramic package.

In addition, according to the method of manufacturing the solid-state image pickup device of the present invention, the lead for external terminal connection is connected to the connection portion provided at the peripheral portion of the image pickup region of the solid-state image pickup element chip, and near the image pickup region. By disposing a transparent cap for protecting the solid-state image sensor chip so that a predetermined space is formed in the space, and sealing between the cap and the peripheral edge of the above-mentioned image sensing area, a solid process is performed in a simple process. A solid-state image pickup device having an airtight space near the image pickup area of the image pickup element chip is obtained, and as a result, a solid-state image pickup device having high image pickup characteristics and reliability can be manufactured at low cost.

[Brief description of drawings]

FIG. 1 is an exploded perspective view showing a schematic configuration of an embodiment of a solid-state imaging device according to the present invention.

FIG. 2 is a plan view showing the whole of the embodiment.

FIG. 3 is a view in the Y direction of FIG. 1 of the embodiment.

4 is a cross-sectional view taken along the line AB of FIG. 4B is an enlarged view of a portion E in FIG. 4A. 4C is an enlarged view of part F in FIG. 4A. FIG.

FIG. 5 is a rear view showing the whole of the embodiment.

FIG. 6 is a sectional view taken along line CD of FIG.

FIG. 7 is a view on arrow in the X direction in FIG. 2 of the embodiment.

FIG. 8 is an overall plan view showing another embodiment of the solid-state imaging device according to the present invention.

FIG. 9 is a rear view of the whole of the embodiment.

FIG. 10 is a cross-sectional view of a main part of the embodiment.

FIG. 11 is an overall plan view showing another embodiment of the solid-state imaging device according to the present invention.

FIG. 12 is an overall back view of the embodiment.

FIG. 13 is a sectional view of an essential part of the embodiment.

FIG. 14 is an overall rear view showing another embodiment of the solid-state imaging device according to the present invention.

FIG. 15 is a sectional view showing the whole of another embodiment of the solid-state imaging device according to the present invention.

FIG. 16 is a cross-sectional view of a main part showing still another embodiment of the solid-state imaging device according to the present invention.

FIG. 17 is a cross-sectional view of main parts showing still another embodiment of the solid-state imaging device according to the present invention.

FIG. 18 is a plan view showing an entire conventional solid-state imaging device.

19 is a cross-sectional view taken along the line ab of FIG.

FIG. 20 is a sectional view showing a main part of a conventional solid-state imaging device.

[Explanation of symbols]

 1 Solid-state imaging device chip 2 Substrate 3 Imaging area 4 Electrode pad (connecting part) 5 Anisotropic conductive film 6, 6A, 6B Flexible substrate (carrier tape) 7 Adhesive resin 8 Cap 9 Photodiode 10 Bump 11 Adhesive 12 Conductive particles 13 lead 14 space L on-chip micro lens 31 insulating film

Claims (7)

[Claims] 1. A solid-state image sensor chip having a connection portion provided at a peripheral portion of an image-capturing area, and a transparent cap for protecting the solid-state image sensor chip, and a lead for connecting to an external terminal. A solid-state image pickup device, characterized in that it is connected to a connection portion and is sealed between a peripheral portion of the image pickup region and the cap so that an airtight space is formed near the image pickup region. 2. A solid-state image sensor chip having a connection portion provided at a peripheral portion of an image-capturing area, and a transparent cap for protecting the solid-state image sensor chip, and a lead for connecting to an external terminal as described above. In addition to connecting to the connection portion, an insulating film is formed on a portion of the lead corresponding to an edge of the solid-state image pickup device chip, and a gap between the peripheral portion of the image pickup region and the cap is sealed. A characteristic solid-state imaging device. 3. The solid-state imaging device according to claim 1, wherein the lead is connected to the connection portion by an anisotropic conductive film. 4. The solid-state image pickup device according to claim 1, wherein a lead with a carrier tape is connected to the connecting portion. 5. The solid-state image pickup device according to claim 1, wherein the solid-state image pickup element chip and the cap have substantially the same area. 6. The solid-state imaging device according to claim 1, further comprising an on-chip microlens above the imaging area. 7. The solid-state image sensor chip protection, wherein a lead for connecting an external terminal is connected to a connecting portion provided at a peripheral portion of an image-pickup region of the solid-state image sensor chip so that a space is formed near the image-pickup region. A method for manufacturing a solid-state image pickup device, comprising: disposing a transparent cap for use in the case, and sealing between the cap and a peripheral portion of the image pickup region.