JP2001351997A - Structure mounted with light-receiving sensor and method using the same - Google Patents
Structure mounted with light-receiving sensor and method using the sameInfo
- Publication number
- JP2001351997A JP2001351997A JP2000173845A JP2000173845A JP2001351997A JP 2001351997 A JP2001351997 A JP 2001351997A JP 2000173845 A JP2000173845 A JP 2000173845A JP 2000173845 A JP2000173845 A JP 2000173845A JP 2001351997 A JP2001351997 A JP 2001351997A
- Authority
- JP
- Japan
- Prior art keywords
- receiving sensor
- light
- light receiving
- semiconductor wafer
- mounting structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 230000001681 protective effect Effects 0.000 claims description 17
- 230000003287 optical effect Effects 0.000 claims description 6
- 239000003566 sealing material Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000007789 sealing Methods 0.000 abstract description 9
- 230000009467 reduction Effects 0.000 abstract description 4
- 239000000565 sealant Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 102100029774 Eukaryotic translation initiation factor 1b Human genes 0.000 description 1
- 101001012792 Homo sapiens Eukaryotic translation initiation factor 1b Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体受光センサ
ーの実装構造体およびその使用方法に関する。詳しく
は、本発明は、半導体受光素子を応用した受光センサ
ー、特にビデオカメラ、ディジタルカメラなどの映像機
器(以下、機器という)に広く利用されるCCDやC−
MOSなどの半導体受光センサーの実装構造体およびそ
の使用方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light receiving sensor mounting structure and a method of using the same. More specifically, the present invention relates to a light receiving sensor to which a semiconductor light receiving element is applied, in particular, a CCD or a C-type CCD widely used in video equipment such as video cameras and digital cameras (hereinafter referred to as equipment).
The present invention relates to a mounting structure of a semiconductor light receiving sensor such as a MOS and a method of using the same.
【0002】[0002]
【従来の技術】従来、半導体受光センサーの実装には、
セラミック、樹脂などで形成された封止容器内部に収
納、封止する方法が広く用いられてきた。図6にその一
例を示す。2. Description of the Related Art Conventionally, a semiconductor light receiving sensor is mounted on a semiconductor device.
2. Description of the Related Art A method of housing and sealing in a sealed container formed of ceramic, resin, or the like has been widely used. FIG. 6 shows an example.
【0003】受光センサー4aなどを搭載した半導体ウ
エハー1は、所定のチップ状に切断され、予め金属製リ
ード8bと一体に成形された封止容器8aに接着固定す
る。半導体の配線回路4cと、金属製リード8bとを金
属製ワイヤー9で接続したのち、おもにガラス板からな
る光透過性保護部材6を封止容器に接着し、受光センサ
ーを気密封止する。[0003] The semiconductor wafer 1 on which the light receiving sensor 4a and the like are mounted is cut into a predetermined chip shape, and is adhered and fixed to a sealing container 8a formed integrally with a metal lead 8b in advance. After connecting the semiconductor wiring circuit 4c and the metal lead 8b with the metal wire 9, the light transmitting protection member 6 mainly made of a glass plate is adhered to the sealing container, and the light receiving sensor is hermetically sealed.
【0004】しかしながら上述の従来の実装方式では次
のような問題点がある。However, the above-described conventional mounting method has the following problems.
【0005】1.半導体チップの周辺に封止容器、保護
部材などを配置する必要があり、これらは受光センサー
を応用する機器の小型化を制約する。[0005] 1. It is necessary to arrange a sealing container, a protective member, and the like around the semiconductor chip, and these restrict the miniaturization of a device to which the light receiving sensor is applied.
【0006】2.半導体ウエハーを予め所定のチップ状
に切断し、封止容器に接着、ワイヤー接続の工程を経る
ため、取り扱い中に受光センサーにゴミが付着しやす
い。個々の受光センサーは数マイクロメートル程度の大
きさであるため、わずかなゴミも画像不良を引き起こ
し、これが歩留りの低下と製造コストの上昇に結びつ
く。[0006] 2. Since the semiconductor wafer is cut into predetermined chips in advance, adhered to a sealing container, and passed through a wire connection process, dust easily adheres to the light receiving sensor during handling. Since each light receiving sensor is several micrometers in size, even a small amount of dust causes an image defect, which leads to a reduction in yield and an increase in manufacturing cost.
【0007】3.保護部材や封止容器の外形と受光セン
サーとの相対位置精度としては、各部材の成形精度と接
着などによる組立精度との組み合せから、一般的には±
0.1〜0.01ミリメートル程度になる。これに対し
て、受光センサーと光学系の相対位置精度としては±
0.01〜0.001ミリメートル程度を要求される場
合が多い。[0007] 3. The relative position accuracy between the outer shape of the protective member or the sealed container and the light-receiving sensor is generally determined by a combination of the molding accuracy of each member and the assembly accuracy by bonding or the like.
It is about 0.1 to 0.01 mm. On the other hand, the relative position accuracy between the light receiving sensor and the optical system is ±
In many cases, about 0.01 to 0.001 mm is required.
【0008】受光センサーは保護部材の中に収納、封止
されているため、直接これに触れることはできない。従
って、一般的に光学系の部材と封止容器などとの間に調
整機構を設け、受光センサーの出力を参照しながら位置
合わせを行う。Since the light receiving sensor is housed and sealed in the protective member, it cannot be touched directly. Therefore, generally, an adjustment mechanism is provided between a member of the optical system and a sealing container or the like, and alignment is performed with reference to the output of the light receiving sensor.
【0009】図4のaに光学系と調整機構の例を示す。
光学系の代表であるレンズ101と、受光センサーの相
対位置を調整するために封止容器を支える保持部材10
4と、ネジを介してこれに係合するレンズ保持用鏡筒1
02との距離をネジ止めなどの手段により微調整する。
また、鏡筒102と光透過性保護部材6の間にパッキン
103を設けて、保護部材の表面に異物が付着するのを
防止することも必要である。FIG. 4A shows an example of an optical system and an adjusting mechanism.
A holding member 10 for supporting a sealed container for adjusting a relative position between a lens 101 which is a representative of an optical system and a light receiving sensor.
4 and a lens barrel 1 for engaging with the lens via a screw
02 is finely adjusted by means such as screwing.
It is also necessary to provide a packing 103 between the lens barrel 102 and the light-transmitting protective member 6 to prevent foreign matter from adhering to the surface of the protective member.
【0010】このような機構と工程も機器の小型化と低
コスト化を著しく妨げる要因となる。[0010] Such a mechanism and process are also factors that significantly impede downsizing and cost reduction of equipment.
【0011】[0011]
【発明が解決しようとする課題】本発明の課題は、前記
したような問題点のない受光センサーの実装構造体およ
びその使用方法を提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide a light-receiving sensor mounting structure and a method of using the same that do not have the above-mentioned problems.
【0012】[0012]
【課題を解決するための手段】本発明は、かかる不具合
を解消する目的でなされたものであり、半導体ウエハー
の切断前に配線工程および保護部材の接着工程などを行
うウエハーレベルCSP(チップ サイズ パッケー
ジ)を実現することとしている。SUMMARY OF THE INVENTION The present invention has been made for the purpose of overcoming the above-mentioned problems, and has a wafer level CSP (chip size package) for performing a wiring step and a bonding step of a protection member before cutting a semiconductor wafer. ).
【0013】従って本発明により、半導体ウエハーと、
前記半導体ウエハーの第一の面上に形成された受光セン
サーと、前記半導体ウエハーを貫通して前記受光センサ
ー自体または前記受光センサーに接続する配線から前記
第一の面に対向する前記半導体ウエハーの裏面に達する
貫通電極と、前記受光センサーから間隔配置された光透
過性保護部材とおよび、前記受光センサー以外の領域で
前記保護部材と前記第一の面とを接着固定する封止材と
からなることを特徴とする受光センサーの実装構造体が
提供される。Therefore, according to the present invention, a semiconductor wafer
A light receiving sensor formed on a first surface of the semiconductor wafer, and a back surface of the semiconductor wafer facing the first surface from a wiring connected to the light receiving sensor itself or the light receiving sensor penetrating the semiconductor wafer. And a light-transmitting protective member spaced from the light-receiving sensor, and a sealing material that adheres and fixes the protective member and the first surface in a region other than the light-receiving sensor. A mounting structure for a light receiving sensor is provided.
【0014】さらに本発明により、前記した受光センサ
ーの実装構造体の使用方法が提供される。Further, according to the present invention, there is provided a method of using the above-mentioned light receiving sensor mounting structure.
【0015】[0015]
【発明の実施の形態】図1のaには本発明の第一実施例
の断面図を示し、また、図1のbにはその平面図を示
す。FIG. 1A is a sectional view of a first embodiment of the present invention, and FIG. 1B is a plan view thereof.
【0016】ここで1は切断済みのチップ状半導体ウエ
ハー(チップ)、5bは貫通電極、4aは受光センサ
ー、4bは受光センサー上に設けられたマイクロレンズ
である。マイクロレンズにより受光センサーの集光効率
が向上する。Here, 1 is a cut chip-shaped semiconductor wafer (chip), 5b is a through electrode, 4a is a light receiving sensor, and 4b is a microlens provided on the light receiving sensor. The light collection efficiency of the light receiving sensor is improved by the micro lens.
【0017】板ガラスなどの光透過性保護部材6は、受
光センサー、及びマイクロレンズには触れないように、
封止剤7を介してチップ上に接着固定する。また封止剤
7は、受光センサーの周囲を切れ目なく囲い、かつ、受
光センサーを覆わず、そして保護部材がセンサー及びマ
イクロレンズに接しないように、塗布後、硬化してい
る。この封止剤は前述のように光透過性保護部材を固定
して、受光センサーやマイクロレンズを機械的に保護す
ると共に、雰囲気から遮断する機能も持つ。The light-transmissive protective member 6 such as a sheet glass is provided so as not to touch the light receiving sensor and the microlens.
The adhesive is fixed on the chip via the sealant 7. Further, the sealing agent 7 is hardened after application so as to surround the light receiving sensor without any discontinuity, not to cover the light receiving sensor, and so that the protective member does not contact the sensor and the microlens. As described above, the sealing agent fixes the light-transmitting protective member, mechanically protects the light-receiving sensor and the microlens, and has a function of shielding the microsensor from the atmosphere.
【0018】図2に上記実施例の加工工程を示す。FIG. 2 shows the processing steps of the above embodiment.
【0019】a(断面図)及びb(平面図):半導体ウ
エハー1に、受光センサー4a、受光センサーの駆動回
路や出力の処理回路(不図示)、配線回路4cなどを、
通常の半導体形成手段により形成する。A (cross-sectional view) and b (plan view): On the semiconductor wafer 1, a light receiving sensor 4a, a driving circuit and an output processing circuit (not shown) for the light receiving sensor, a wiring circuit 4c, etc.
It is formed by ordinary semiconductor forming means.
【0020】c(断面図):配線回路部に非貫通の深孔
5aを異方性エッチングなどにより穿ち、深孔内面に絶
縁層と、配線回路部に接続する導電層を堆積する。C (sectional view): A non-penetrating deep hole 5a is formed in the wiring circuit portion by anisotropic etching or the like, and an insulating layer and a conductive layer connected to the wiring circuit portion are deposited on the inner surface of the deep hole.
【0021】d(断面図)及びe(平面図):個々の受
光センサーの周囲を切れ目なく囲み、かつ、これを覆わ
ないように封止剤7をスクリーン印刷、ディスペンスな
どの手段により半導体ウエハーの第一の面2に塗布す
る。D (cross-sectional view) and e (plan view): A sealant 7 is formed around the individual light-receiving sensors by means of screen printing, dispensing, or the like so as to continuously surround the light receiving sensor and not to cover the same. Apply to first face 2.
【0022】f(断面図):半導体ウエハーとほぼ同じ
平面寸法を有する光透過性保護部材6を圧着し、熱、紫
外線などを作用させて封止剤7を硬化させる。F (cross-sectional view): A light-transmitting protective member 6 having substantially the same plane dimensions as the semiconductor wafer is pressed, and the sealant 7 is cured by the action of heat, ultraviolet rays, or the like.
【0023】g(断面図):半導体ウエハーの裏面3側
からc(断面図)で形成した導電層が露出するまでエッ
チングを行う。G (Cross section): Etching is performed from the back surface 3 side of the semiconductor wafer until the conductive layer formed in c (Cross section) is exposed.
【0024】h(断面図):鎖線12で示す所定のチッ
プ寸法にダイシングする。H (sectional view): Dicing is performed to a predetermined chip size indicated by a chain line 12.
【0025】このようにして得られたCSP(チップ
サイズ パッケージ)は、図3に示すように通常のプリ
ント配線基板105に、異方性導電接着剤(ACP)1
06などを用いて搭載することができる。The CSP (chip) thus obtained
As shown in FIG. 3, an anisotropic conductive adhesive (ACP) 1 is attached to a normal printed wiring board 105 as shown in FIG.
06 or the like.
【0026】以上の説明の中で、封止剤7は、半導体ウ
エハーの第一の面2ではなく、保護部材6側に塗布して
もよい。また、光透過性保護部材6は、各種の光学フィ
ルター機能、或いは結像などレンズ機能を持つものでも
よい。In the above description, the sealant 7 may be applied to the protection member 6 instead of the first surface 2 of the semiconductor wafer. The light-transmitting protective member 6 may have various optical filter functions or a lens function such as image formation.
【0027】このような実装形態では、従来の形態に比
べて著しく寸法が小さくなるばかりでなく、光透過性保
護部材6の外形と受光センサーの相対位置精度も向上す
る。In such a mounting form, not only the size is significantly reduced as compared with the conventional form, but also the outer shape of the light transmitting protection member 6 and the relative positional accuracy of the light receiving sensor are improved.
【0028】従って図4bに示すように、鏡筒102に
直接接着固定することも可能であり、この場合は機器の
小型化、低価格化に大きく貢献する。Therefore, as shown in FIG. 4B, it is also possible to directly bond and fix the lens barrel 102. In this case, it greatly contributes to miniaturization and cost reduction of the equipment.
【0029】図5に第二実施例を示す。光透過性保護部
材6と受光センサー4aをより高い精度で位置決めする
ために、その保護部材に凸部6aを設け、この凸部のみ
が封止剤7を介して半導体ウエハーの第一の面2ないし
配線回路4cと接触する。これにより厚さ方向の位置決
め精度をより高く保つことができる。FIG. 5 shows a second embodiment. In order to position the light transmitting protective member 6 and the light receiving sensor 4a with higher accuracy, a convex portion 6a is provided on the protective member, and only this convex portion is connected to the first surface 2 of the semiconductor wafer via the sealant 7. Or contact with the wiring circuit 4c. Thereby, the positioning accuracy in the thickness direction can be kept higher.
【0030】[0030]
【発明の効果】以上説明したように、本発明によれば受
光センサーの実装構造体を小型化し、また、その構造体
を多くの部材を介さずに構成することができるため、映
像機器などの飛躍的な小型化が実現する。As described above, according to the present invention, the mounting structure of the light receiving sensor can be reduced in size, and the structure can be configured without interposing many members. Dramatic miniaturization is realized.
【0031】また、半導体ウエハーの切断精度が外形精
度になるため、極めて精度の高い位置決めが実現でき、
機器の小型化と同時に組立調整コストの削減も達成する
ことができる。Further, since the cutting accuracy of the semiconductor wafer becomes the outer shape accuracy, extremely accurate positioning can be realized.
At the same time as the equipment is downsized, the cost for assembling and adjusting can be reduced.
【図1】本発明の第一実施例を示す断面図。FIG. 1 is a sectional view showing a first embodiment of the present invention.
【図2】本発明の製造工程を示す図。FIG. 2 is a view showing a manufacturing process of the present invention.
【図3】本発明の製造工程を示す図。FIG. 3 is a view showing a manufacturing process of the present invention.
【図4】受光センサーの機器組込形態を示す断面図。a
はネジを介して組み込む例であり、bは接着固定により
組み込む例である。FIG. 4 is a cross-sectional view illustrating a form in which a light receiving sensor is incorporated into a device. a
Is an example of assembling with screws, and b is an example of assembling with adhesive.
【図5】本発明の第二実施例を示す断面図。FIG. 5 is a sectional view showing a second embodiment of the present invention.
【図6】従来の受光センサーの実装形態を示す断面図。FIG. 6 is a cross-sectional view showing a mounting form of a conventional light receiving sensor.
1 半導体ウエハー 2 半導体ウエハーの第一の面 3 半導体ウエハーの裏面 4a 受光センサー 5b 貫通電極 6 光透過性保護部材 7 封止剤 DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 2 First surface of semiconductor wafer 3 Back surface of semiconductor wafer 4a Light receiving sensor 5b Through electrode 6 Light transmitting protective member 7 Sealant
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H04N 5/335 H01L 31/02 D Fターム(参考) 4M118 AA10 AB01 BA10 FA06 GC11 GC20 GD03 GD04 GD07 HA01 HA12 HA24 HA33 5C024 CY47 CY48 EX21 EX42 EX43 EX51 GY01 GY31 5F088 BA15 BA18 BA20 BB03 GA03 JA01 JA03 JA05 JA09 JA12 JA13 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification FI FI Theme coat ゛ (Reference) H04N 5/335 H01L 31/02 DF Term (Reference) 4M118 AA10 AB01 BA10 FA06 GC11 GC20 GD03 GD04 GD07 HA01 HA12 HA24 HA33 5C024 CY47 CY48 EX21 EX42 EX43 EX51 GY01 GY31 5F088 BA15 BA18 BA20 BB03 GA03 JA01 JA03 JA05 JA09 JA12 JA13
Claims (6)
サーと、 前記半導体ウエハーを貫通して前記受光センサー自体ま
たは前記受光センサーに接続する配線から前記第一の面
に対向する前記半導体ウエハーの裏面に達する貫通電極
と、 前記受光センサーから間隔配置された光透過性保護部材
とおよび、 前記受光センサー以外の領域で前記保護部材と前記第一
の面とを接着固定する封止材とからなることを特徴とす
る受光センサーの実装構造体。A first semiconductor wafer; a light receiving sensor formed on a first surface of the semiconductor wafer; and a first wire penetrating through the semiconductor wafer and connecting to the light receiving sensor itself or the light receiving sensor. A through-electrode reaching the back surface of the semiconductor wafer facing the surface; a light-transmitting protective member spaced from the light receiving sensor; and bonding the protective member and the first surface in a region other than the light receiving sensor. A mounting structure for a light receiving sensor, comprising a sealing material to be fixed.
ンズが形成されていることを特徴とする請求項1に記載
の受光センサーの実装構造体。2. The mounting structure according to claim 1, wherein a micro lens is formed on a surface of the light receiving sensor.
および光学ローパスフィルターのうち少なくとも一方の
機能を持つことを特徴とする請求項1に記載の受光セン
サーの実装構造体。3. The mounting structure according to claim 1, wherein the protection member has at least one function of an infrared cut filter and an optical low-pass filter.
の面が平面であることを特徴とする請求項1に記載の受
光センサーの実装構造体。4. The mounting structure for a light-receiving sensor according to claim 1, wherein the surface of the protection member facing the surface of the sealing material is a flat surface.
の面がその縁部全体にわたって凸部を有することを特徴
とする請求項1に記載の受光センサーの実装構造体。5. The mounting structure for a light-receiving sensor according to claim 1, wherein the surface of the protection member facing the surface of the sealing material has a projection over the entire edge thereof.
た受光センサーの実装構造体を直接的に鏡筒に接合する
ことを特徴とする受光センサーの実装構造体の使用方
法。6. A method for using a light receiving sensor mounting structure, wherein the light receiving sensor mounting structure according to claim 1 is directly joined to a lens barrel.
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