JP2009252807A - Imaging device - Google Patents

Imaging device Download PDF

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JP2009252807A
JP2009252807A JP2008095604A JP2008095604A JP2009252807A JP 2009252807 A JP2009252807 A JP 2009252807A JP 2008095604 A JP2008095604 A JP 2008095604A JP 2008095604 A JP2008095604 A JP 2008095604A JP 2009252807 A JP2009252807 A JP 2009252807A
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imaging device
transparent resin
imaging
external connection
resin
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Japanese (ja)
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Masahito Mori
将人 森
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Panasonic Corp
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Panasonic Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

<P>PROBLEM TO BE SOLVED: To provide a more compact imaging device capable of preventing mixture of foreign matter. <P>SOLUTION: The imaging device comprises an imaging element 3 having a light-receiving element 1 and an electrode pad 2 on one principal plane, a transparent resin part 4 covering the element 1 and the pad 2, and an external connection 5a formed through the transparent resin part 4 to connect with the electrode pad 2 of the imaging element 3. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は撮像素子をパッケージングした撮像装置に関する。   The present invention relates to an imaging apparatus in which an imaging element is packaged.

近年、携帯情報端末やノート型のパーソナルコンピュータなどのモバイル機器、住宅等のセキュリティーセンサー、車の側面や背面のモニター用センサーなどに、小型カメラの需要が高まっている。小型カメラとしては、固体撮像素子と信号処理回路等の周辺回路とをワンチップに集積したＬＳＩであるワンチップカメラが普及している。   In recent years, there has been an increasing demand for small cameras for mobile devices such as personal digital assistants and notebook personal computers, security sensors for houses, etc., sensors for monitors on the side and rear of a car, and the like. As a small camera, a one-chip camera, which is an LSI in which a solid-state imaging device and a peripheral circuit such as a signal processing circuit are integrated on one chip, is widely used.

図５はワンチップカメラを用いた撮像装置（カメラパッケージ）を示す。受光素子１０１およびパッド電極１０２が形成された半導体ＩＣ１０３は、凹状のパッケージ（樹脂材からなる収納容器）１０４内に固着材１０５により固着され、パッケージ１０４に一体化されたリード１０６に対してワイヤ１０７により電気的に接続され、パッケージ１０４の上端部に樹脂封止材１０８で固着されたガラス等の透明シール板１０９により保護されている（たとえば特許文献１）。
特表２００２−５１２４３６号公報 FIG. 5 shows an imaging apparatus (camera package) using a one-chip camera. The semiconductor IC 103 on which the light receiving element 101 and the pad electrode 102 are formed is fixed by a fixing material 105 in a concave package (storage container made of a resin material) 104, and a wire 107 is connected to a lead 106 integrated with the package 104. And is protected by a transparent sealing plate 109 made of glass or the like fixed to the upper end portion of the package 104 with a resin sealing material 108 (for example, Patent Document 1).
Japanese translation of PCT publication No. 2002-512436

しかしながら、上記した従来の撮像装置は、半導体ＩＣ１０３、リード１０６付きのパッケージ１０４、透明シール板１０９という個別の部品により組み立てているため、またリード１０６を所定形状に加工しているため、小型化は限界となっている。組み立ての際に異物が混入することもある。   However, the above-described conventional imaging apparatus is assembled by individual components such as the semiconductor IC 103, the package 104 with the leads 106, and the transparent seal plate 109, and the leads 106 are processed into a predetermined shape. It is the limit. Foreign matter may be mixed during assembly.

本発明は、上記問題に鑑み、より小型でかつ異物混入を防止できる撮像装置を提供することを目的とする。   In view of the above problems, an object of the present invention is to provide an imaging apparatus that is smaller and can prevent foreign matter from being mixed.

上記課題を解決するために、本発明の撮像装置は、受光部と電極部とを一主面に有する撮像素子と、前記受光部と電極部とを覆った透明樹脂部と、前記撮像素子の電極部に接続して前記透明樹脂部に貫通形成された外部接続部とを有した構成としたことを特徴とする。   In order to solve the above problems, an imaging apparatus according to the present invention includes an imaging element having a light receiving part and an electrode part on one main surface, a transparent resin part covering the light receiving part and the electrode part, and an imaging element. An external connection portion that is connected to the electrode portion and formed through the transparent resin portion is provided.

外部接続部はさらに透明樹脂部の外面に沿って撮像素子の他の一主面側まで形成されていることを特徴とする。外部接続配部は金属析出によって形成することができる。
配線基板上に金属線を介して電気的に接続して搭載することができる。また配線基板上に接合材を介して電気的に接続して搭載することができる。撮像素子の他の一主面に非透明性の樹脂層が配置されていることが好ましい。 The external connection part is further formed to the other main surface side of the image sensor along the outer surface of the transparent resin part. The external connection distribution part can be formed by metal deposition.
It can be mounted on the wiring board by being electrically connected via a metal wire. Further, it can be mounted on the wiring board by being electrically connected via a bonding material. It is preferable that a non-transparent resin layer is disposed on the other main surface of the image sensor.

本発明の撮像装置は、撮像素子とその受光素子を保護する透明樹脂部と外部接続部とを隙間なく一体化しているので、別個のカバーガラスやリードを用いていた従来品と比べて、薄型化、小型化することができる。また受光素子を直接に透明樹脂部で覆うことから、それ以降の撮像装置の組立て工程、カメラモジュール組立工程において異物の混入を防止することができ、検査を含めた異物対策が低減可能となる。   In the imaging device of the present invention, the transparent resin part that protects the imaging element, the light receiving element, and the external connection part are integrated with no gap, so that it is thinner than the conventional product that uses a separate cover glass or lead. And miniaturization. In addition, since the light receiving element is directly covered with the transparent resin portion, it is possible to prevent foreign matters from being mixed in the subsequent assembly process of the imaging apparatus and the camera module assembly process, and measures against foreign matters including inspection can be reduced.

以下、本発明の実施の形態について、図面を参照しながら説明する。
図１は本発明の一実施形態の撮像装置の断面図である。撮像装置１０は、受光素子１と電極パッド２とを一主面（以下、この一主面を表面、もう一主面を裏面という）に有する撮像素子３と、撮像素子３の表面を覆った透明樹脂部４と、電極パッド２から透明樹脂部４の外部に引き出された外部接続配線５とを有している。透明樹脂部４は撮像素子３の受光素子１を保護するとともに、外郭の一部を構成しており、パッケージの機能を担っている。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a cross-sectional view of an imaging apparatus according to an embodiment of the present invention. The imaging device 10 covers the imaging element 3 having the light receiving element 1 and the electrode pad 2 on one main surface (hereinafter, this one main surface is referred to as a front surface and the other main surface as a back surface), and the surface of the imaging element 3. It has a transparent resin part 4 and an external connection wiring 5 drawn out from the electrode pad 2 to the outside of the transparent resin part 4. The transparent resin part 4 protects the light receiving element 1 of the image pickup element 3 and constitutes a part of the outer shell, and functions as a package.

撮像素子３は、ここでは、受光型半導体イメージセンサと呼ばれる半導体ＩＣである。外部接続配線５は、電極パッド２に接続して透明樹脂部４に貫通形成された外部接続部５ａと、外部接続部５ａの端部から透明樹脂部４の外面に沿って撮像素子３の裏面側まで延びた外部接続部５ｂとにより構成されていて、撮像素子３と透明樹脂部４の端部を包み込む立体配線の形状を呈している。   Here, the imaging element 3 is a semiconductor IC called a light receiving type semiconductor image sensor. The external connection wiring 5 is connected to the electrode pad 2 and penetrated through the transparent resin portion 4, and the back surface of the imaging device 3 along the outer surface of the transparent resin portion 4 from the end of the external connection portion 5 a. The external connection part 5b extended to the side has the shape of the three-dimensional wiring which wraps the edge part of the image pick-up element 3 and the transparent resin part 4. FIG.

この撮像装置１０は、撮像素子３の裏面側に配置された配線基板１１上に搭載されてカメラモジュールを構成している。撮像装置１０の外部接続部５ｂと配線基板１１の電極部１２とは接合材１３を介して接続されている。配線基板１１としては、ガラスエポキシ材などの樹脂材料で形成されている樹脂基板や、ポリイミドやポリエチレンテレフタレートなど屈曲性に優れるフレキシブル基板が用いられる。   The imaging device 10 is mounted on a wiring board 11 disposed on the back side of the imaging device 3 to constitute a camera module. The external connection part 5 b of the imaging device 10 and the electrode part 12 of the wiring board 11 are connected via a bonding material 13. As the wiring substrate 11, a resin substrate formed of a resin material such as a glass epoxy material, or a flexible substrate having excellent flexibility such as polyimide or polyethylene terephthalate is used.

上記撮像装置１０の製造方法について、図２を参照しながら説明する。
図２（ａ）に示すように、シリコンウェハプロセスにより、受光素子１と電極パッド２とを有する撮像素子３がマトリックス状に並んだウェハ２０１を作製する。そしてウェハ２０１をエクスパンド可能な支持材２０２に貼り付ける。 A method for manufacturing the imaging device 10 will be described with reference to FIG.
As shown in FIG. 2A, a wafer 201 in which imaging elements 3 having light receiving elements 1 and electrode pads 2 are arranged in a matrix is manufactured by a silicon wafer process. Then, the wafer 201 is attached to a support material 202 that can be expanded.

図２（ｂ）に示すように、金型２０３を用いてウェハ２０１上に透明樹脂４を流し込んで一体成型する。透明樹脂４は、メタクリル樹脂、ポリメチルメタルリレート樹脂、フルオレン系樹脂、シクロオレフィン樹脂、エポキシ樹脂、シリコーン系樹脂、ポリカーボネート樹脂、AC樹脂、ポリエチレン樹脂、ポリスチレン樹脂、フッ素化ポリアクリレート樹脂、ポリエチレンテレフタレート樹脂、MS樹脂、ポリ塩化ビニリデン樹脂のいずれか、もしくは複合して用いられる。   As shown in FIG. 2B, the transparent resin 4 is poured onto the wafer 201 using a mold 203 and integrally molded. Transparent resin 4 is methacrylic resin, polymethyl metal relate resin, fluorene resin, cycloolefin resin, epoxy resin, silicone resin, polycarbonate resin, AC resin, polyethylene resin, polystyrene resin, fluorinated polyacrylate resin, polyethylene terephthalate resin. MS resin, polyvinylidene chloride resin, or a composite.

図２（ｃ）に示すように、硬化後の透明樹脂４に対して、各撮像素子３の電極パッド２が露出するように例えばレーザー２０４を用いて穴２０５を形成する穴あけ加工を施す。また穴２０５の近傍であって撮像装置１０どうしを分割するための切断線上に穴２０６を形成する穴あけ加工を施す。   As shown in FIG. 2C, the transparent resin 4 after curing is subjected to a drilling process for forming a hole 205 using, for example, a laser 204 so that the electrode pad 2 of each imaging element 3 is exposed. Further, a drilling process for forming a hole 206 is performed in the vicinity of the hole 205 and on a cutting line for dividing the imaging devices 10.

図２（ｄ）に示すように、切断線に沿って成型品を切断する。切断後の成型品は切断面に穴２０６に基づく断面半円の溝を有することとなる。図２（ｅ）に示すように、支持材２０２をエクスパンドして、個々の成型品を互いの間に等間隔の隙間が出来るように完全に分離させる。   As shown in FIG. 2D, the molded product is cut along the cutting line. The molded product after the cutting has a semicircular groove based on the hole 206 on the cut surface. As shown in FIG. 2 (e), the support member 202 is expanded to completely separate the individual molded products so that gaps at equal intervals are formed between them.

図２（ｆ）に示すように、個々の成型品に金属析出により外部接続配線５（５ａ，５ｂ）を形成して、撮像装置１０を得る。ここで、金属析出は、メッキ技術や蒸着技術などを用いて所定の個所に金属を析出させる方法を意味する。   As shown in FIG. 2F, the external connection wiring 5 (5a, 5b) is formed on each molded product by metal deposition, and the imaging device 10 is obtained. Here, metal deposition means a method of depositing metal at a predetermined location using a plating technique or a vapor deposition technique.

最後に、先の図１に示したように、撮像装置１０を接合材１３を介して配線基板１１上に搭載してカメラモジュールとする。接合材１３は、たとえばはんだなどの金属ろう材を図示したようにボール形状として用いるほか、導電性粒子を熱可塑性、熱硬化性の樹脂に含有させた電気的接続材料、いわゆる導電性ペーストや導電性シートなどを用いることができる。   Finally, as shown in FIG. 1, the imaging device 10 is mounted on the wiring board 11 via the bonding material 13 to form a camera module. As the bonding material 13, for example, a metal brazing material such as solder is used as a ball shape as shown in the figure, and an electrical connection material in which conductive particles are contained in a thermoplastic or thermosetting resin, a so-called conductive paste or conductive material. An adhesive sheet can be used.

以上のように、撮像素子３とその受光素子１を保護する透明樹脂部４と外部接続配線５とを隙間なく一体化したことにより、別個のカバーガラスやリードを用いていた従来品と比べて、撮像装置１０を薄型化、小型化することができる。また受光素子１を直接に透明樹脂部４で覆うことから、それ以降の撮像装置の組立て工程、カメラモジュール組立工程において異物の混入を防止することができ、検査を含めた異物対策が低減可能となる。これらのことにより、部材数の削減、組立て工程数の削減が可能となり、それによるコストダウンを実現できる。   As described above, the transparent resin portion 4 and the external connection wiring 5 that protect the imaging element 3, the light receiving element 1 and the external connection wiring 5 are integrated with no gap, so that it is compared with a conventional product using a separate cover glass or lead. The imaging device 10 can be reduced in thickness and size. In addition, since the light receiving element 1 is directly covered with the transparent resin portion 4, it is possible to prevent foreign matters from being mixed in the subsequent assembly process of the imaging device and the camera module assembly process, and to reduce countermeasures against foreign matters including inspection. Become. As a result, it is possible to reduce the number of members and the number of assembly processes, thereby realizing cost reduction.

図３に示すように、撮像装置１０の撮像素子３の裏面と配線基板１１との間に非透明性の樹脂層６を形成することが好ましい。この樹脂層６によって、配線基板１１上のパターンが反射等を介して映し出されるのを防止できるだけでなく、接合材１３を補強して撮像装置１０を配線基板１１に確実に固定することができ、また撮像装置１０で発生する熱を配線基板１１に伝達して撮像装置１０を効率的に冷却することができるため、信頼性を向上できる。なお樹脂層６の非透明性樹脂は遮光できるものであればよく、カーボンブラック含有樹脂などを使用可能である。   As shown in FIG. 3, it is preferable to form a non-transparent resin layer 6 between the back surface of the imaging element 3 of the imaging device 10 and the wiring board 11. This resin layer 6 can not only prevent the pattern on the wiring board 11 from being reflected through reflection or the like, but also can reinforce the bonding material 13 and securely fix the imaging device 10 to the wiring board 11. Further, since heat generated in the imaging device 10 can be transmitted to the wiring board 11 and the imaging device 10 can be efficiently cooled, reliability can be improved. In addition, the non-transparent resin of the resin layer 6 should just be light-shielding, and carbon black containing resin etc. can be used.

図４に示すように、電極パッド２から透明樹脂部４の外面までの外部接続部５ａ（いわゆるビア）のみを金属析出により、あるいは導電ペーストの埋め込みにより形成し、外部接続部５ａと配線基板１１上の電極部１２とを金属線７を介して接続しても構わない。このようにすると、図１に示したような立体配線に比べて製造工程を簡素化できる。   As shown in FIG. 4, only the external connection portion 5a (so-called via) from the electrode pad 2 to the outer surface of the transparent resin portion 4 is formed by metal deposition or by embedding a conductive paste, and the external connection portion 5a and the wiring board 11 are formed. The upper electrode portion 12 may be connected via the metal wire 7. In this way, the manufacturing process can be simplified as compared to the three-dimensional wiring as shown in FIG.

本発明の撮像装置は、薄型化、小型化を実現できるもので、かかる撮像装置を搭載する携帯電話、携帯情報端末、ノート型のパーソナルコンピュータなどのモバイル機器、住宅などのセキュリティーセンサー、車の側面や背面のモニター用センサーの小型化にも寄与する。   The image pickup apparatus of the present invention can be reduced in thickness and size. A mobile phone equipped with such an image pickup apparatus, a mobile information terminal, a mobile device such as a notebook personal computer, a security sensor for a house, a vehicle side surface, and the like. This also contributes to the downsizing of the monitor sensor on the back.

本発明の一実施形態の撮像装置の断面図Sectional drawing of the imaging device of one Embodiment of this invention 図１の撮像装置の製造方法を説明する工程断面図Process sectional drawing explaining the manufacturing method of the imaging device of FIG. 本発明の他の実施形態の撮像装置の断面図Sectional drawing of the imaging device of other embodiment of this invention 本発明のさらに他の実施形態の撮像装置の断面図Sectional drawing of the imaging device of further another embodiment of this invention. 従来の撮像装置の断面図Sectional view of a conventional imaging device

符号の説明Explanation of symbols

１ 受光素子
２ 電極パッド
３ 撮像素子
４ 透明樹脂部
５ 外部接続配線
5a,5b 外部接続部
６ 非透明性の樹脂層
10 撮像装置
11 配線基板
12 電極部
13 接合材 DESCRIPTION OF SYMBOLS 1 Light receiving element 2 Electrode pad 3 Image pick-up element 4 Transparent resin part 5 External connection wiring
5a, 5b External connection 6 Non-transparent resin layer
10 Imaging device
11 Wiring board
12 Electrode section
13 Bonding material

Claims (6)

受光部と電極部とを一主面に有する撮像素子と、前記受光部と電極部とを覆った透明樹脂部と、前記撮像素子の電極部に接続して前記透明樹脂部に貫通形成された外部接続部とを有している撮像装置。   An imaging element having a light receiving part and an electrode part on one main surface, a transparent resin part covering the light receiving part and the electrode part, and connected to the electrode part of the imaging element and formed through the transparent resin part An imaging device having an external connection unit. 外部接続部はさらに透明樹脂部の外面に沿って撮像素子の他の一主面側まで形成されている請求項１に記載の撮像装置。   The imaging apparatus according to claim 1, wherein the external connection portion is further formed along the outer surface of the transparent resin portion to the other main surface side of the imaging element. 外部接続配部は金属析出によって形成されている請求項１または請求項２のいずれかに記載の撮像装置。   The imaging apparatus according to claim 1, wherein the external connection distribution portion is formed by metal deposition. 配線基板上に金属線を介して電気的に接続して搭載された請求項１に記載の撮像装置。   The imaging device according to claim 1, wherein the imaging device is mounted on a wiring board by being electrically connected via a metal wire. 配線基板上に接合材を介して電気的に接続して搭載された請求項２に記載の撮像装置。   The imaging device according to claim 2, wherein the imaging device is mounted on the wiring board by being electrically connected via a bonding material. 撮像素子の他の一主面に非透明性の樹脂層が配置されている請求項１に記載の撮像装置。   The imaging device according to claim 1, wherein a non-transparent resin layer is disposed on another main surface of the imaging element.
JP2008095604A 2008-04-02 2008-04-02 Imaging device Pending JP2009252807A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012114370A (en) * 2010-11-26 2012-06-14 Fujikura Ltd Semiconductor package

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012114370A (en) * 2010-11-26 2012-06-14 Fujikura Ltd Semiconductor package

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