JPS62272564A - Infrared ray detector - Google Patents
Infrared ray detectorInfo
- Publication number
- JPS62272564A JPS62272564A JP61116414A JP11641486A JPS62272564A JP S62272564 A JPS62272564 A JP S62272564A JP 61116414 A JP61116414 A JP 61116414A JP 11641486 A JP11641486 A JP 11641486A JP S62272564 A JPS62272564 A JP S62272564A
- Authority
- JP
- Japan
- Prior art keywords
- photodetector
- infrared ray
- receiving element
- infrared
- electric signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 abstract 1
- 238000001514 detection method Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 238000003331 infrared imaging Methods 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
- H01L27/14881—Infrared CCD or CID imagers of the hybrid type
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔概要〕
ハイブリッド型の赤外線検知装置、特に、赤外線撮像装
置の改良である。[Detailed Description of the Invention] 3. Detailed Description of the Invention [Summary] This is an improvement of a hybrid type infrared detection device, particularly an infrared imaging device.
赤外線受光素子部と電気信号処理部とを相互に。mutually connect the infrared light receiving element section and the electrical signal processing section.
対向する位置に極めて接近して上下に重ね合わせるよう
に設け、赤外線受光素子部と直接対接する領域を除き、
電気信号処理部の裏面に赤外線不透過膜を設けて、この
赤外線不透過膜をもって、背景光を遮断しＳ／Ｎ比を向
上する機能を有するコールドシールドを構成したハイブ
リッド型の赤外線検知装置、特に、赤外線撮像装置であ
る。They are placed very close to each other and overlapped one above the other, excluding the area that directly contacts the infrared receiving element.
A hybrid infrared detection device, in particular, in which an infrared opaque film is provided on the back side of the electrical signal processing section, and this infrared opaque film constitutes a cold shield that has the function of blocking background light and improving the S/N ratio. , an infrared imaging device.
本発明は、ハイブリッド型の赤外線検知装置。 The present invention is a hybrid type infrared detection device.
特に、赤外線撮像装置の改良に関する。ざらに詳細には
、コールドシールドの効果を良好にしてＳ／Ｎ比を向上
し、別付きの部品をなくして製造工程を短縮し体積を小
さくする等の目的を実現するためになす赤外線受光素子
部と電気信号処理部とコールドシールドとの構造的改良
に関する。In particular, it relates to improvements in infrared imaging devices. In more detail, it is an infrared receiving element that is made to achieve the following objectives: improve the cold shield effect, improve the S/N ratio, eliminate separate parts, shorten the manufacturing process, and reduce the volume. This invention relates to structural improvements to the electrical signal processing section, the electrical signal processing section, and the cold shield.
従来技術に係るハイブリッド型の赤外線撮ｌｉ＆′装置
の１例の構造を第４図に示す０図において、１は、光電
変換を行なう赤外線受光素子を有する赤外線受光素子部
であり、チップステージ４上に乗せられる。２はマルチ
プレクサ等よりなる電気信号処理回路を有する電気信号
処理部であり、これも、チップステージ４上に乗せられ
る。３はコールドシールドであり背景光を遮断して信号
光のみを赤外線受光素子部ｌに導きＳ／Ｎ比を向上する
機爺を有する。５は強制冷却部であり、液体窒素等を使
用して強制冷却される。FIG. 4 shows the structure of an example of a hybrid type infrared imaging device according to the prior art. In FIG. be put on. Reference numeral 2 denotes an electric signal processing section having an electric signal processing circuit including a multiplexer, etc., and this is also mounted on the chip stage 4. 3 is a cold shield which has the function of blocking background light and guiding only the signal light to the infrared light receiving element part 1 to improve the S/N ratio. Reference numeral 5 denotes a forced cooling section, which performs forced cooling using liquid nitrogen or the like.
上記せるように、従来技術に係るハイブリッド型の赤外
線撮像装置は、赤外線受光素子部と電気信号処理部とが
チップステージ上に並置され、別付きのコールドシール
ドがこれを覆って設けられているので、下記の欠点を免
れなかった。As mentioned above, in the hybrid type infrared imaging device according to the conventional technology, the infrared light receiving element section and the electrical signal processing section are arranged side by side on the chip stage, and a separate cold shield is provided to cover this. , it was not free from the following drawbacks.
イ、コールドシールドが別付きであるから、部品点数が
多く工程が煩雑である。B. Since the cold shield is attached separately, the number of parts is large and the process is complicated.
口、コールドシールドが別付きであるから、ハイブリッ
ド型の赤外線検知装置、特に、赤外線撮像装置の体積が
大きくなる。Since the mouth and cold shield are provided separately, the volume of the hybrid infrared detection device, especially the infrared imaging device, becomes large.
本発明の目的は、これらの欠点を解消することにあり、
コールドシールド効果が良好で、 Ｓ／Ｎ比が大きく、
別付き部品がなく一体構造であり、製造工程も短く、体
積も小さい赤外線検知装置を提供することにある。The purpose of the present invention is to eliminate these drawbacks,
Good cold shield effect, large S/N ratio,
It is an object of the present invention to provide an infrared detection device that has an integral structure without separate parts, has a short manufacturing process, and has a small volume.
上記の目的を達成するために本発明が採った手段は、光
電変換を行なう赤外線受光素子１２を有する板状赤外線
受光素子部ｌと、前記の赤外線受光素子１２と接続され
前記の板状赤外線受光素子部ｌ上に設けられる接続導体
柱６と、前記の板状赤外線受光素子部１に対向して設け
られ前記の赤外線受光素子１２と直接対接する領域を除
きその裏面には赤外線不透過膜７が形成されてなり前記
の接続導体柱６と接続する電気信号処理回路２２を有す
る赤外線透過性板状体よりなる電気信号処理部２とをも
って赤外線検知装置を構成したことにある。The means taken by the present invention to achieve the above object include a plate-like infrared light receiving element part l having an infrared light receiving element 12 that performs photoelectric conversion, and a plate-like infrared light receiving element part l connected to the infrared light receiving element 12 and having an infrared light receiving element 12 that performs photoelectric conversion. An infrared opaque film 7 is provided on the back surface of the connecting conductor column 6 provided on the element portion l, except for the area provided opposite to the plate-shaped infrared receiving element portion 1 and in direct contact with the infrared receiving element 12. An infrared detecting device is constituted by an electric signal processing section 2 made of an infrared transparent plate-like body having an electric signal processing circuit 22 formed thereon and connected to the above-mentioned connecting conductor column 6.
本発明は、マルチプレクサ等よりなる電気信号処理回路
を有する電気信号処理部が一般に単結晶シリコンを使用
して製造され、この単結晶シリコンは赤外線を透過する
から、これを基板とし。In the present invention, an electric signal processing section having an electric signal processing circuit such as a multiplexer is generally manufactured using single crystal silicon, and since this single crystal silicon transmits infrared rays, this is used as a substrate.
これの裏面に多結晶シリコン膜、金属膜等赤外線を透過
しない材料の膜を形成すればコールドシールドを製造し
うるという着想を具体化して実現したものであり、本発
明に係るコールドシールドは赤外線受光素子部に直接対
接する領域を除いて電気信号処理部の裏面に形成された
ポリシリコン。This was realized by embodying the idea that a cold shield could be manufactured by forming a film of a material that does not transmit infrared rays, such as a polycrystalline silicon film or a metal film, on the back surface of this. Polysilicon formed on the back surface of the electrical signal processing section except for the area directly in contact with the element section.
金属等のｆ＃ｉ膜である。このコールドシールドと赤外
線受光素子部との距離は２０ル膳程度で極めて接近して
いるので、背景光遮断効果が顕著であり、Ｓ／Ｎ比の向
上に極めて有効であり、そのため、このコールドシール
ドは各画素毎に設けることができ、また、このコールド
シールドは゛電気信号処理部の一部分であるから、コー
ルドシールドのために別付き部材を必要としない。This is an f#i film made of metal or the like. Since the distance between this cold shield and the infrared light receiving element is very close, about 20 mm, the background light blocking effect is remarkable and it is extremely effective in improving the S/N ratio. can be provided for each pixel, and since this cold shield is a part of the electrical signal processing section, no separate member is required for the cold shield.
以下、図面を参照しつ一２本発明の一実施例に係る赤外
線検知装置についてさらに説明する。Hereinafter, an infrared detection device according to an embodiment of the present invention will be further described with reference to the drawings.
第２図参照
インジュウムアンチモン、水銀カドミュウムテルル等の
基板１１’（厚さ約ｌ■）に赤外線受光素子１２を形成
し、さらに、基板１１の表面を無反射コート膜１３をも
ってカバーして赤外線受光素子部１を形成する。Referring to FIG. 2, an infrared receiving element 12 is formed on a substrate 11' (thickness approximately l) made of indium antimony, mercury cadmium tellurium, etc., and the surface of the substrate 11 is further covered with a non-reflection coating film 13. An infrared light receiving element section 1 is formed.
赤外線受光素子１２の電極と接続される接続導体柱６の
下半部Ｂ１を、赤外線受光素子１２の周囲に図示するよ
うに形成する。この工程は通常のリソグラフィー法とエ
ツチング法との組み合せまたはリフトオフ法をもってな
しうる。なお、接続導体柱６の下半部６１の高さは約１
０１が適当である。The lower half B1 of the connecting conductor column 6 to be connected to the electrode of the infrared light receiving element 12 is formed around the infrared light receiving element 12 as shown in the figure. This step can be accomplished by a combination of conventional lithography and etching methods or by a lift-off method. Note that the height of the lower half 61 of the connecting conductor column 6 is approximately 1
01 is appropriate.
第３図参照 次に、電気信号処理部２を製造する。See Figure 3 Next, the electrical signal processing section 2 is manufactured.
シリコン基板２１（厚さ約４００ｇ層）にマルチプレク
サ等の電気信号処理回路２２を形成する。この電気信号
処理回路２２の入力端子２３は、図示するようにその裏
面に形成される。この入力端子２３と接続して、接続導
体柱６の上半部Ｂ２を、図示するように形成する。この
工程は通常のリソグラフィー法とエツチング法との組み
合せ等をもってなしうる。なお、この接続導体柱６の上
半部８２の高さも約１０Ｂｍが適当である。An electrical signal processing circuit 22 such as a multiplexer is formed on a silicon substrate 21 (layer approximately 400 g thick). The input terminal 23 of this electrical signal processing circuit 22 is formed on the back surface thereof as shown. Connected to this input terminal 23, the upper half B2 of the connection conductor column 6 is formed as shown. This step can be accomplished by a combination of ordinary lithography and etching methods. Note that the height of the upper half 82 of this connection conductor column 6 is also suitably about 10 Bm.
シリコン基板２１の裏面に、赤外線受光素子部と直接対
接することとなる領域以外に、多結晶シリコンの薄膜（
厚さ約５牌謹）またはアルミニウム等赤外線不透過性金
属の薄膜７を形成する。この工程も通常のリソグラフィ
ー法とエツチング法との組み合わせまたはリフトオフ法
を使用して形成しうる。この多結晶シリコンの薄膜７ま
たは赤外線不透過性金属の薄膜７がコールドシールドと
して機部する。A thin film of polycrystalline silicon (
A thin film 7 having a thickness of approximately 5 tiles or made of an infrared opaque metal such as aluminum is formed. This step can also be formed using a combination of conventional lithography and etching methods or a lift-off method. This polycrystalline silicon thin film 7 or infrared opaque metal thin film 7 serves as a cold shield.
一第１図参照
上記のようにして製造した赤外線受光素子部１と電気信
号処理部２とを、図示するように、対接して接続導体柱
６の上半部８２と下半部Ｂ１とを圧着し、一体化する。1. Refer to FIG. 1. As shown in the figure, the infrared light receiving element section 1 and the electrical signal processing section 2 manufactured as described above are brought into contact with each other, and the upper half part 82 and the lower half part B1 of the connecting conductor column 6 are connected. Crimp and integrate.
以上の構造の赤外線検知装置にあっては、赤外線受光素
子部と電気信号処理部とは一体化されており、しかも、
コールドシールドと赤外線受光素子部とは極めて近接し
ているので、部品点数が少なく、体積が小さく、しかも
コールドシールドの効果が良好である。In the infrared detection device having the above structure, the infrared light receiving element section and the electric signal processing section are integrated, and furthermore,
Since the cold shield and the infrared light receiving element are very close to each other, the number of parts is small, the volume is small, and the effect of the cold shield is good.
以上説明せるとおり、本発明に係る赤外線検知装置は、
光電変換を行なう赤外線受光素子を有する板状赤外線受
光素子部と、赤外線受光素子と接続され板状赤外線受光
素子部上に設けられる接続導体柱と、板状赤外線受光素
子部に対向して設けられ赤外線受光素子と直接対接する
領域を除きその裏面には赤外線不透過膜が形成されてな
り接続導体柱と接続する電気信号処理回路を有する赤外
線透過性板状体よりなる電気信号処理部とをもって構成
されているので、コールドシールドと赤外線受光素子部
との距離は極めて接近しており、背景光遮断効果が顕著
であり、コールドシールド効果が良好で、Ｓ／Ｎ比が大
きく、別付き部品がなく一体構造であり製造工程も短く
体積も小さく、さらに、コールドシールドと赤外線受光
素子部との距離は極めて接近しているので、コールドシ
ールドを各画素毎に設けることもできる。As explained above, the infrared detection device according to the present invention is
A plate-like infrared light-receiving element section having an infrared light-receiving element that performs photoelectric conversion, a connecting conductor column connected to the infrared light-receiving element and provided on the plate-like infrared light-receiving element section, and a connecting conductor column provided opposite to the plate-like infrared light-receiving element section. An electrical signal processing section is formed of an infrared transmissive plate-like body having an infrared opaque film formed on its back surface except for the area in direct contact with the infrared receiving element, and an electrical signal processing circuit connected to the connecting conductor column. Since the distance between the cold shield and the infrared receiving element is extremely close, the background light blocking effect is remarkable, the cold shield effect is good, the S/N ratio is large, and there are no separate parts. Since it is an integral structure, the manufacturing process is short and the volume is small, and furthermore, the distance between the cold shield and the infrared light receiving element section is extremely close, so a cold shield can be provided for each pixel.
第１図は、本発明の一実施例に係る赤外線検知装置の断
面図である。
第２．３図は、本発明の一実施例に係る赤外線検知装置
の製造工程を説明する工程図である。
０１４図は、従来技術に係る赤外線検知装置の断面図で
ある。
ｌ−会・赤外線受光素子部。
１１−−−インジュウムアンチモン、水銀カドミュウム
テルル等の基板、
１２・・・赤外線受光素子、
１３・・・無反射コート膜、゛
２・・・電気信号処理部、
２１Φ・・シリコン基板。
２２・・・電気信号処理回路、
２３・・・入力端子、
３・・・コールドシールド、
４・・・チップステージ、
５・・・強制冷却部。
６・・・接続導体柱、
８１−・Φ接続導体柱の下半部、
６２φ拳・接続導体柱の上半部。
７・・・赤外線不透過膜。
第４図
工程画
第２図
工程図
第３１！１
本発明
第１図FIG. 1 is a sectional view of an infrared detection device according to an embodiment of the present invention. FIG. 2.3 is a process diagram illustrating the manufacturing process of an infrared detection device according to an embodiment of the present invention. FIG. 014 is a sectional view of an infrared detection device according to the prior art. l-kai・Infrared receiving element part. 11---Substrate of indium antimony, mercury cadmium tellurium, etc., 12... Infrared light receiving element, 13... Anti-reflection coating film, ゛2... Electric signal processing section, 21Φ... Silicon substrate. 22... Electric signal processing circuit, 23... Input terminal, 3... Cold shield, 4... Chip stage, 5... Forced cooling section. 6...Connection conductor column, 81-. Lower half of Φ connection conductor column, 62-φ fist, upper half of connection conductor column. 7...Infrared opaque film. Fig. 4 Process drawing Fig. 2 Process drawing No. 31!1 Present invention Fig. 1
Claims (1)
赤外線受光素子部（１）と、 前記赤外線受光素子（１２）と接続され前記板状赤外線
受光素子部（１）上に設けられる接続導体柱（６）と、 前記板状赤外線受光素子部（１）に対向して設けられ、
前記赤外線受光素子（１２）と直接対接する領域を除き
その裏面には赤外線不透過膜（７）が形成されてなり、
前記接続導体柱（６）と接続される電気信号処理回路（
２２）を有する赤外線透過性板状体よりなる電気信号処
理部（２）とを備えてなる赤外線検知装置。[Scope of Claims] A plate-shaped infrared receiving element section (1) having an infrared receiving element (12) that performs photoelectric conversion, and a plate-shaped infrared receiving element section (1) connected to the infrared receiving element (12). a connecting conductor column (6) provided in the plate-shaped infrared receiving element part (1);
An infrared opaque film (7) is formed on the back surface of the infrared receiving element (12) except for the area directly in contact with the infrared receiving element (12),
an electric signal processing circuit (
22); and an electric signal processing section (2) made of an infrared transparent plate-like body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61116414A JPS62272564A (en) | 1986-05-20 | 1986-05-20 | Infrared ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61116414A JPS62272564A (en) | 1986-05-20 | 1986-05-20 | Infrared ray detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62272564A true JPS62272564A (en) | 1987-11-26 |
Family
ID=14686473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61116414A Pending JPS62272564A (en) | 1986-05-20 | 1986-05-20 | Infrared ray detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62272564A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0344955A (en) * | 1989-06-30 | 1991-02-26 | Hughes Aircraft Co | High indium or alloy bump array for ir detector hybrid and microelectronics |
| US7768048B2 (en) | 2003-09-09 | 2010-08-03 | Asahi Kasei Emd Corporation | Infrared sensor IC, and infrared sensor and manufacturing method thereof |
-
1986
- 1986-05-20 JP JP61116414A patent/JPS62272564A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0344955A (en) * | 1989-06-30 | 1991-02-26 | Hughes Aircraft Co | High indium or alloy bump array for ir detector hybrid and microelectronics |
| JPH0770683B2 (en) * | 1989-06-30 | 1995-07-31 | ヒューズ・エアクラフト・カンパニー | Method of forming infrared detector |
| US7768048B2 (en) | 2003-09-09 | 2010-08-03 | Asahi Kasei Emd Corporation | Infrared sensor IC, and infrared sensor and manufacturing method thereof |
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