JPS62232958A - Semiconductor image pick-up element - Google Patents
Semiconductor image pick-up elementInfo
- Publication number
- JPS62232958A JPS62232958A JP61075432A JP7543286A JPS62232958A JP S62232958 A JPS62232958 A JP S62232958A JP 61075432 A JP61075432 A JP 61075432A JP 7543286 A JP7543286 A JP 7543286A JP S62232958 A JPS62232958 A JP S62232958A
- Authority
- JP
- Japan
- Prior art keywords
- light
- photodiode array
- semiconductor substrate
- electrode
- photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 239000000969 carrier Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000011347 resin Substances 0.000 abstract description 3
- 229920005989 resin Polymers 0.000 abstract description 3
- 229910052804 chromium Inorganic materials 0.000 abstract description 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 2
- 229910052759 nickel Inorganic materials 0.000 abstract description 2
- 229910052763 palladium Inorganic materials 0.000 abstract description 2
- 229910052697 platinum Inorganic materials 0.000 abstract description 2
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- 229910052721 tungsten Inorganic materials 0.000 abstract description 2
- 229910052720 vanadium Inorganic materials 0.000 abstract description 2
- 238000012216 screening Methods 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 19
- 238000010586 diagram Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は光学像を電気信号に変換する半導体撮像素子
に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor image sensor that converts an optical image into an electrical signal.
ＣＣＤなどのような半導体撮像素子では、画質向上のた
めの画素数増大やチップの小形化のために高密度化が必
須である。一方、感度の向上のためにはフォトダイオー
ドの受光面の拡大が必要である。これらの条件を満足さ
せるに従来は第５図に示すようｌこ例えばｎ形の８ｉか
らなる半導体基板４１に、例えばＢを拡散して形成した
Ｐ影領域４２（４２ａ、・・・、４２６）と、基板４１
の表面に形成された絶縁膜４３および絶縁膜４３に形成
されたコンタクトホールを介してＰ影領域４２に接する
金属電極４４（４４ａ 、・・・、 ４４ｅ）および絶
縁膜４３のコンタクトホールを介して基板４１に接する
金属電極４５で構成されるフォトダイオードアレーの裏
面４６より光を入射させていた。この第５図に示した例
では、フォトダイオードの受光面積を可能なかぎり大き
くとるために、フォトダイオードからの出力信号の転送
部４７をフォトダイオードと分離して、フォトダイオー
ドと信号転送部４７の間をバンプ電極４８ （４８ａ。In a semiconductor image sensor such as a CCD, it is essential to increase the number of pixels to improve image quality and to increase the density to reduce the size of the chip. On the other hand, in order to improve sensitivity, it is necessary to enlarge the light-receiving surface of the photodiode. In order to satisfy these conditions, conventionally, as shown in FIG. 5, P shadow regions 42 (42a, . . . , 426) are formed by diffusing, for example, B into a semiconductor substrate 41 made of, for example, n-type 8i. and the board 41
Through the insulating film 43 formed on the surface of the insulating film 43 and the metal electrodes 44 (44a, . . . , 44e) in contact with the P shadow region 42 through the contact holes formed in the insulating film 43 and the contact holes in the insulating film 43, Light was incident on the back surface 46 of a photodiode array composed of a metal electrode 45 in contact with a substrate 41. In the example shown in FIG. 5, in order to maximize the light receiving area of the photodiode, the transfer section 47 for the output signal from the photodiode is separated from the photodiode, and the transfer section 47 for the output signal from the photodiode is separated from the photodiode. A bump electrode 48 (48a) is inserted between the bump electrodes 48 (48a).
・・・４８ｆ）で結合しである。４９（４９ａ、・・・
。...48f). 49 (49a,...
.
４９ｆ）は信号転送部４７上に設けられたフォトダイオ
ードからの係号を受けたり、あるいはフォトタイオード
へ電圧を供給するための１！甑である。49f) is 1! for receiving a signal from the photodiode provided on the signal transfer section 47 or for supplying voltage to the photodiode. It is a koshiki.
しかしこの様な従来技術では高密度化と受光面の拡大に
よりフォトダイオードの間隔がせまくなると画素間のク
ロストークが問題になる。第６図は、従来技術の問題点
を説明するための図である。（６）は第５図のフォトダ
イオードアレーの一部ヲ拡大したもので、これに（ａ）
に示すような分布をもった光が入射すると、半導体基板
４１の裏面付近でキャリヤ５０が発生する。このキャリ
ヤ５ｏは半導体基板４１の中で等方的に拡散するために
、光の入射していない領域にある電極４４ｂにもキャリ
ヤの一部が到達する。そのために電極４４ｂからも弱い
信号が出てクロストークが発生する。However, in such conventional technology, crosstalk between pixels becomes a problem when the spacing between photodiodes becomes narrower due to higher density and enlargement of the light-receiving surface. FIG. 6 is a diagram for explaining the problems of the prior art. (6) is an enlarged part of the photodiode array in Figure 5, and (a)
When light having a distribution as shown in FIG. 1 is incident, carriers 50 are generated near the back surface of the semiconductor substrate 41. Since the carriers 5o are isotropically diffused within the semiconductor substrate 41, some of the carriers also reach the electrode 44b in the region where no light is incident. Therefore, a weak signal is also output from the electrode 44b, causing crosstalk.
本発明は上記した点に鑑みなされたもので、裏面入射形
半導体フォトダイオードアレーを用いた撮像素子の画素
間のクロストークをほとんどなくした撮像素子を提供す
ることを目的とする。The present invention has been made in view of the above points, and an object of the present invention is to provide an image sensor using a back-illuminated semiconductor photodiode array in which crosstalk between pixels is almost eliminated.
〔発明の概要〕
本発明は裏面入射形半導体フォトダイオードアレーのフ
ォトダイオードの境界に対応するフォトタイオードアレ
ーの入射面側に遮光膜を形成することを特徴とする。[Summary of the Invention] The present invention is characterized in that a light shielding film is formed on the incident surface side of the photodiode array corresponding to the boundaries of the photodiodes of the back-illuminated semiconductor photodiode array.
本発明によれば、フォトダイオードの間かくを小さくし
てもクロストークを十分に小さくすることができる。従
って本発明によれば、クロストークが十分に小さい高密
度で高感度な撮像素子を実現することができる。According to the present invention, crosstalk can be sufficiently reduced even if the spacing of the photodiodes is reduced. Therefore, according to the present invention, it is possible to realize a high-density, high-sensitivity imaging device with sufficiently low crosstalk.
以下本発明の詳細な説明する。 The present invention will be explained in detail below.
第１図は、一実施例の半導体撮像素子の断面楡造を示す
。例えば“ｎ形の８ｉ等の半導体基板１の表面にＢ等の
不純物を拡散させ、Ｐ形の領域２（２ａ。FIG. 1 shows a cross-sectional structure of a semiconductor image sensor according to an embodiment. For example, an impurity such as B is diffused into the surface of an n-type semiconductor substrate 1 such as 8i, and a p-type region 2 (2a) is diffused.
・・・、２ｅ）を形成する。３は半導体基板１の表面に
形成された絶縁膜、４（４ａ 、・・・、４ｅ）は絶縁
膜３に形成したコンタクトホールを介してＩＪ、ＩＮ領
域２（２ａ、・・・、２ｅ）に接する金属電梧、５は絶
縁膜３に形成したコンタクトホールを介して半導体基板
ｌに接する金属電極である。７ （７ａ。..., 2e) is formed. Reference numeral 3 denotes an insulating film formed on the surface of the semiconductor substrate 1, and 4 (4a, . . . , 4e) connects IJ and IN regions 2 (2a, . . . , 2e) through contact holes formed in the insulating film 3. A metal electrode 5 is in contact with the semiconductor substrate l through a contact hole formed in the insulating film 3. 7 (7a.
・・・、７ｄ）は半導体基板１の裏面６にたとえば蒸着
前により形成された遮光膜である。遮光膜７はＡｔ、Ａ
ｕ、Ｔｉ、Ｍｏ、Ｗ、Ｃｒ、Ｎｉ、Ｖ、Ｐｄ、Ｐｔ。..., 7d) is a light shielding film formed on the back surface 6 of the semiconductor substrate 1, for example, before vapor deposition. The light shielding film 7 is made of At, A
u, Ti, Mo, W, Cr, Ni, V, Pd, Pt.
Ａｇ等の金属又は、樹脂等で入射光を透過させないもの
で、フォトダイオードの境界に対応する位置に設けられ
ている。８は例えばＣＯＤ等の様な信号転送部で、フォ
トダイオードアレーの受光面積をできる限り大きくする
ために半導体基板１とは別にしである。１０（１０ａ、
・・・、１０ｆ）は信号転送部８の表面に設けられた電
極で、フォトダイオードからの信号を受けたりフォトダ
イオードへ電圧を供給するのが目的である。９（９ａ。It is made of metal such as Ag or resin, and does not allow incident light to pass through, and is provided at a position corresponding to the boundary of the photodiode. Reference numeral 8 denotes a signal transfer section such as a COD, which is separate from the semiconductor substrate 1 in order to maximize the light receiving area of the photodiode array. 10 (10a,
..., 10f) is an electrode provided on the surface of the signal transfer section 8, and its purpose is to receive a signal from the photodiode and to supply voltage to the photodiode. 9 (9a.
・・・、９ｆ）はバンプ電極で半導体基板ｌ側の電極４
．５と信号転送部８側の電極１０とを１対１で結合して
いる。..., 9f) is a bump electrode, which is the electrode 4 on the semiconductor substrate l side.
．． 5 and the electrode 10 on the side of the signal transfer section 8 are coupled on a one-to-one basis.
第２図は本発明による遮光膜の効果を説明するための図
である。（ｂ）は第１図に示した本発明による遮光膜を
そなえたフォトダイオードアレーの部分図であり、これ
に（ａ）に示すような分布で光が入射すると、光の入射
する開口部ではキャリヤ１１が発生し、このキャリヤ１
１がＰ影領域２に到達し％電極４より出力信号が出る。FIG. 2 is a diagram for explaining the effect of the light shielding film according to the present invention. (b) is a partial view of the photodiode array shown in FIG. 1 and equipped with a light-shielding film according to the present invention. Carrier 11 is generated, and this carrier 1
1 reaches the P shadow area 2 and an output signal is output from the % electrode 4.
キャリヤ１１は等方的に拡散し、キャリヤが到達する確
率は拡散長の（−２）乗に比例して減少するので、一番
近くの電極４ｂからほとんどの信号が出力される。Since the carriers 11 diffuse isotropically and the probability of carrier arrival decreases in proportion to the (-2) power of the diffusion length, most of the signals are output from the nearest electrode 4b.
隣りの電極４Ｃから出力される信号も零ではないが、本
発明による遮光膜７ｂにより光が入射し、キャリヤ１１
が発生する領域と隣りのＰ影領域２ｅとの距離が長くな
っているので、隣りのＰ影領域２Ｃに到達するキャリヤ
１１の確率はかなり小さくなり、はとんどノイズレベル
と同等になる。Although the signal output from the adjacent electrode 4C is not zero, the light is incident on the light shielding film 7b according to the present invention, and the carrier 11
Since the distance between the region in which P is generated and the neighboring P shadow region 2e is long, the probability of the carrier 11 reaching the neighboring P shadow region 2C is considerably small, and is almost equal to the noise level.
（Ｃ）はこのときの出力信号の分布を示している。この
実施例によれば、半導体フォトダイオードアレーの裏面
側のフォトダイオードの境界に対応する位置に遮光膜を
設けると、隣り合う画素間のクロストークをほとんどな
くすことができるので、小型で高解像な撮像素子が実現
できる。(C) shows the distribution of the output signal at this time. According to this embodiment, by providing a light-shielding film at a position corresponding to the photodiode boundary on the back side of the semiconductor photodiode array, crosstalk between adjacent pixels can be almost eliminated, resulting in a compact and high-resolution device. It is possible to realize an image sensor with a wide range of functions.
本発明は上記実施例に限られるものではない。The present invention is not limited to the above embodiments.
例えば第３図に示すように半導体基板２１からなるフォ
トダイオードアレーの裏面に金属、樹脂寺の遮光膜２２
を接着剤２３で接着してもよい。また第４図に示すよう
に半導体基板３１からなるフォトダイオードアレーの裏
面に接着剤３２で接着されたフィルター３３に遮光膜３
４を設けてもよい。また３３は半導体基板３１の補強板
でもよい。For example, as shown in FIG. 3, a light-shielding film 22 made of metal or resin is coated on the back side of a photodiode array made of a semiconductor substrate 21.
may be bonded with adhesive 23. Further, as shown in FIG. 4, a light shielding film 3 is attached to a filter 33 that is bonded with an adhesive 32 to the back surface of a photodiode array made of a semiconductor substrate 31.
4 may be provided. Further, 33 may be a reinforcing plate for the semiconductor substrate 31.
半導体基板からなるフォトダイオードアレーの材料は５
ｌｌ（かぎらず、Ｇｅ 、 Ｉｎ Ｐ 、 Ｉ ｎ８ｂ
、 Ｃｄ”ｆ’ｅ 、 ＣｄＴｈＨｇ。The material of the photodiode array made of semiconductor substrate is 5.
ll (not limited to Ge, In P, In8b
, Cd”f'e, CdThHg.
ＣｄＳ等の材料でもよい。また半導体基板の導電形はｎ
形番こかぎらず、Ｐ形でもよい。この場合は拡散等に形
成するのは逆の導電形のｎ形の領域である。A material such as CdS may also be used. Also, the conductivity type of the semiconductor substrate is n
The model number is not limited to this, and P type may be used. In this case, what is formed by diffusion or the like is an n-type region of the opposite conductivity type.
第１図は本発明の一実施例を表わす断面図、第２図は本
発明の一実施例の遮光膜の効果を示す図、第３図及び第
４図は本発明の他の実施例を示す断面図、第５図は従来
の撮像素子の断面図、第６図は従来の撮像素子の問題点
を示す図である。
１・・・半導体基板、２・・・拡散によるＰ影領域、３
・・・絶縁膜、４，５・・・電極、６・・・半導体基板
の裏面、７・・・遮光、摸、８・・・信号転送部、９・
・・バンプ電極、１０・・・電極、１１・・・キャリヤ
、２１．３１・・・フォトダイオードアレー、２２，３
４・・・週＋ｇ、２３．３２・・・接着剤、３３・・・
フィルター、４１・・・半導体基板、４２・・・Ｐ影領
域、４３・・・絶域膜、４４．４５・・・電極、４６・
・・半導体基板の裏面、４７・・・信号転送部、４８・
・・ハンプ電極、４９・・・電極、５０・・・キャリヤ
。
代理人 弁理士 則 近 憲 佑
同 竹 花 喜久男
第 １ 図
第２図
第 ｉ！１ 図FIG. 1 is a cross-sectional view showing one embodiment of the present invention, FIG. 2 is a diagram showing the effect of a light-shielding film in one embodiment of the present invention, and FIGS. 3 and 4 are diagrams showing other embodiments of the present invention. FIG. 5 is a cross-sectional view of a conventional image sensor, and FIG. 6 is a diagram showing problems with the conventional image sensor. 1... Semiconductor substrate, 2... P shadow area due to diffusion, 3
... Insulating film, 4, 5... Electrode, 6... Back side of semiconductor substrate, 7... Light shielding, illustration, 8... Signal transfer section, 9.
...Bump electrode, 10... Electrode, 11... Carrier, 21.31... Photodiode array, 22,3
4... Week + g, 23.32... Adhesive, 33...
Filter, 41... Semiconductor substrate, 42... P shadow area, 43... Cutoff film, 44.45... Electrode, 46...
... Back side of semiconductor substrate, 47... Signal transfer section, 48.
... hump electrode, 49 ... electrode, 50 ... carrier. Agent Patent Attorney Noriyuki Chika Yudo Kikuo Takehana Figure 1 Figure 2 Figure i! 1 figure
Claims (1)
撮像素子において入射光により発生したキャリヤの実効
的全数が対応する１個のダイオードのみに収集されるよ
うに、必要部分以外の裏側表面に遮光膜を形成したこと
を特徴とする半導体撮像素子。In an image sensor using a back-illuminated semiconductor photodiode array, a light-shielding film is formed on the back surface except for necessary parts so that the effective total number of carriers generated by incident light is collected only in one corresponding diode. A semiconductor image sensor characterized by the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61075432A JPS62232958A (en) | 1986-04-03 | 1986-04-03 | Semiconductor image pick-up element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61075432A JPS62232958A (en) | 1986-04-03 | 1986-04-03 | Semiconductor image pick-up element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62232958A true JPS62232958A (en) | 1987-10-13 |
Family
ID=13576054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61075432A Pending JPS62232958A (en) | 1986-04-03 | 1986-04-03 | Semiconductor image pick-up element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62232958A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010109744A1 (en) * | 2009-03-26 | 2010-09-30 | パナソニック株式会社 | Solid-state imaging element |
| JP2012186476A (en) * | 2011-03-04 | 2012-09-27 | Societe Francaise De Detecteurs Infrarouges Sofradir | Detection matrix with improved biasing conditions and fabrication method |
-
1986
- 1986-04-03 JP JP61075432A patent/JPS62232958A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010109744A1 (en) * | 2009-03-26 | 2010-09-30 | パナソニック株式会社 | Solid-state imaging element |
| US8395194B2 (en) | 2009-03-26 | 2013-03-12 | Panasonic Corporation | Solid-state imaging device |
| JP2012186476A (en) * | 2011-03-04 | 2012-09-27 | Societe Francaise De Detecteurs Infrarouges Sofradir | Detection matrix with improved biasing conditions and fabrication method |
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