JPH0329189B2 - - Google Patents
Info
- Publication number
- JPH0329189B2 JPH0329189B2 JP58117607A JP11760783A JPH0329189B2 JP H0329189 B2 JPH0329189 B2 JP H0329189B2 JP 58117607 A JP58117607 A JP 58117607A JP 11760783 A JP11760783 A JP 11760783A JP H0329189 B2 JPH0329189 B2 JP H0329189B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate
- metal silicide
- mosi
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021332 silicide Inorganic materials 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 1
- 229910016006 MoSi Inorganic materials 0.000 description 17
- 229910004298 SiO 2 Inorganic materials 0.000 description 17
- 230000015556 catabolic process Effects 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 9
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11760783A JPS609160A (ja) | 1983-06-28 | 1983-06-28 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11760783A JPS609160A (ja) | 1983-06-28 | 1983-06-28 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS609160A JPS609160A (ja) | 1985-01-18 |
| JPH0329189B2 true JPH0329189B2 (US08066781-20111129-C00013.png) | 1991-04-23 |
Family
ID=14715952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11760783A Granted JPS609160A (ja) | 1983-06-28 | 1983-06-28 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS609160A (US08066781-20111129-C00013.png) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62188159U (US08066781-20111129-C00013.png) * | 1986-05-21 | 1987-11-30 | ||
| JPS6347950A (ja) * | 1986-08-18 | 1988-02-29 | Mitsubishi Electric Corp | 半導体装置 |
| JPH0665785B2 (ja) * | 1990-03-13 | 1994-08-24 | 株式会社岸製作所 | 帯状シートの熱溶着装置 |
| JPH06334118A (ja) * | 1993-05-19 | 1994-12-02 | Nec Corp | 半導体装置及びその製造方法 |
| US6936527B1 (en) | 2000-12-19 | 2005-08-30 | Xilinx, Inc. | Low voltage non-volatile memory cell |
| US6496416B1 (en) | 2000-12-19 | 2002-12-17 | Xilinx, Inc. | Low voltage non-volatile memory cell |
| US6930920B1 (en) | 2002-10-29 | 2005-08-16 | Xilinx, Inc. | Low voltage non-volatile memory cell |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5354978A (en) * | 1976-10-29 | 1978-05-18 | Toshiba Corp | Insulated gate type field effect element |
| JPS5413283A (en) * | 1977-06-30 | 1979-01-31 | Ibm | Method of forming metal silicide layer on substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS48105467U (US08066781-20111129-C00013.png) * | 1972-03-15 | 1973-12-07 |
-
1983
- 1983-06-28 JP JP11760783A patent/JPS609160A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5354978A (en) * | 1976-10-29 | 1978-05-18 | Toshiba Corp | Insulated gate type field effect element |
| JPS5413283A (en) * | 1977-06-30 | 1979-01-31 | Ibm | Method of forming metal silicide layer on substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS609160A (ja) | 1985-01-18 |
