JPH03285336A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH03285336A
JPH03285336A JP2085795A JP8579590A JPH03285336A JP H03285336 A JPH03285336 A JP H03285336A JP 2085795 A JP2085795 A JP 2085795A JP 8579590 A JP8579590 A JP 8579590A JP H03285336 A JPH03285336 A JP H03285336A
Authority
JP
Japan
Prior art keywords
wire
bonding
gold wire
gold
capillary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2085795A
Other languages
English (en)
Inventor
Masao Segawa
雅雄 瀬川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2085795A priority Critical patent/JPH03285336A/ja
Publication of JPH03285336A publication Critical patent/JPH03285336A/ja
Pending legal-status Critical Current

Links

Classifications

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、電極パッドを有りる崖導体素子を回路基板に
固定する半導体装置に関する。
（従来の技術） 絶縁基板上にマウントされた半導体素子をワイヤーボン
ディング法により実装した従来の半導体装置の一例を第
４図に示す。
第４図（ａ）は、半導体索子３がマウントされた絶縁基
板１を示す。絶縁基板１は高純度アルミナを絶縁素材と
し、金ペーストによる配線導体を形成しである。９は配
置ａ々休のうちワイヤーボンディング用のボンディング
ランドを示づ。また２は半導体素子３を基板１に接着づ
る接着剤であり、ここでは熱硬化性Ａｏペースト等のＩ
Ｐ電電接着金用いている。このような絶縁１．１板１に
は、予め印刷等の手段によって塗布した金ペーストを＾
温焼成して厚さ１０〜２０μｍ程度の配線導体（ボンデ
ィングランド）９を形成する。その後、絶縁基板１に接
着剤２を塗布し、半導体索子３を仮接着し、ｇ１温焼成
して半導体素子３を基板１に固定（ダイボンディング）
する。このようにして、第４図（ａ）に示すような半導
体素子３がマウントされた半導体装置が形成される。
次に、第４図（ｂ）に承りように、キャピラリ５を半尋
体素ｆ３のアルミ電極パッド４の上に移動し、キャピラ
リ５を通した直径２０〜５０μｍの金線６の先端に放電
用電極７を用いて放電を行い、金線６の先端を溶融して
己径数十μｍの金ボ−ル８を形成する。尚、この時点で
熱圧着のために、絶縁基板１を１００〜１５０℃に加熱
している。次に、第４図（Ｃ）に示すように、キャピラ
リ５に超音波振動を与え、金ボール８を半導体素子３の
アルミ電極パッド４に前記キャピラリ５の先端で加圧し
接合する（第１ボンデイング）。このような熱圧着法（
Ｔ、Ｓ法）により金線６の半導体素子３側の接合を行っ
た後、第４図１）に示すように、金線６を通したキャピ
ラリ５を絶縁１板１上のボンディングランド９上へ移動
する。
そして、第４図（ｅ）に示すように、金線６をＴ。
Ｓ法によりボンディングランド９に接合（第２ボンデイ
ング）する。この後、第４図（ｆ）に示すように、キャ
ピラリ５を、ボンディングランド９より引き離すことで
、ボンディングを完了する。
第４図に示した装置は、第５図に拡大して示１ようにア
ルミ電極パッド４と金ボール８の接合部よりボンディン
グランド９と金線６の接合部の方が低い位置になるため
、金ボール８側にループ１０を形成し、金ボール８のネ
ック部に応力がかからないようにしている。このため、
ループ１０によって半導体装置の高さを大きくしてしま
う。
一方、近年、半導体装２ｊの低コスト化のために配ｌ１
１ｗ４体を銅等の卑金属にする試みがなされている。こ
れに対応して、（８５０℃〉空気中焼成型抵抗体を用い
、配線導体に低ｆＡ（６００℃）窒素焼成型銅導体を用
いたハイブリッドＩＣ（ＨＩＣ）基板が開発されている
。さらに、このような低温焼成ｙの配＃！ａ導体（Ｉ！
４ＮＷＡ）に対しても、上記高密度実装を達成するため
、第４図に示したようなワイヤーボンディングをする要
求がある。ところが、上記銅厚膜では、銅表面の数千人
の銅酸化膜やガラス層が形成されており、金線との金−
銅接合は十分なものといえない。特に、６００℃程麿の
低温焼成型ｔ！４導体では、焼結が不十分であり、厚膜
内部に多数の空隙（ボイド）が存７ｆする。従って、第
２ボンデイングで金線をキャピラリで銅厚膜に加圧する
際にキャピラリが銅厚膜に沈み込み（見掛は上、高度が
低下する）、十分な接合が得られないとともに、キャピ
ラリ内部に金線が潜り込み、次の金ボールを形成できな
いといった不都合が発生した。
一方、この金線の接合強度を測定する方法に、金線リー
ド部中央を引っ張り、金線が破！ｌｉするときの引張り
強度を、金線の接合強度とする方法がある。このような
測定方法において、金線の破断する部分は、第２ボンデ
イングの接合部が大半である。このことは、この第２ボ
ンデイングの接合部の強度不足が金線の破断の原因とな
っていることを示している。これは、上述の理由よるも
のであり、銅厚膜へのボンディングの茶杓より強めにす
る必要がある。しかしながら、金線は、細いために、過
度の加圧や超音波出力を印加すると反対に切断し易くな
る。
第６図はこのような金線の引張り強度と超音波出力の関
係を測定したグラフである。縦軸は引張り強度（単位Ｑ
−ｆ）を示し、横軸は超音波出力を示す。尚、第２ボン
デイングにおいて与える石型は８０ｇ・ｆである。
上記グラフは、熱圧肴時に加える超音波の出力レベルと
して、第２ボンデイングにおける金線（３０μｍ）の変
形を押さえた１、ＯＷ付近が最も強度が高いことを示し
ているが、１．ＯＷ付近でも最低で５ｇ・ｆ程度のもの
もある。このため、銅Ｆ７１１ｕを用いた場合の金線の
引っ張り強度は実用上不十分であった。
（発明が解決しようとづる課題） 前記した従来の半導体装おでは、電極パッドと金ボール
の接合部の金線がループ状になり、半導体装置の厚みが
大きくなる。また、絶縁基板等のベース部材の金Ｊｉｉ
Ｆ７膜ボンディングランドに銅等の卑金属を用いた場合
には接続の強度が不十分であるという問題がイｉっだ。
そこで本発明は、上記の問題点を除去し、薄形実装が可
能であると共にベース部材の金属Ｐ７膜接続に銅等の卑
金属を用いても十分な強度が得られる半導体装５を提供
づることを目的とする。
［発明の構成］ （′ａ題を解決づるための手段） 本発明は、予め配線導体が形成された絶縁基板と、この
絶縁基板に電極パッド形成面とは反対側の面を接着固定
した半導体素子と、一端がボール状に形成されて前記電
極パッドに接続し、他端が前記に接続した金線とを具備
したことを特徴とする。
（作用） この様な構成によれば、配線導体側に金ボールが接続さ
れ、金ボールと導体層との面接続となり、接続強度が十
分に得られる。また、超音波やボンディング荷重を加え
る時にも金ボールの変形作用でその振動を吸収でき接続
強度が劣化しない。
（実施例） 以下、本発明の実施例を図面を参照して説明する。
第１図は本発明に係る半導体装置の一実施例を製造工程
順に示した工程図である。
先ず、第１図（ａ）に示１ようなボンディング前の半導
体装置を作成づる。このような半導体装置は、表面平滑
性のよい９６％アルミブを用いて形成したベース部材（
絶縁基板）１１を用意し、該絶縁基板１１に、例えばス
クリーン印刷法により、市販の低温焼成型銅ペーストを
印刷する。次に、銅ペーストを印刷した絶＃１基板１１
を乾燥し、６００℃の窒素を用いた焼成炉に通し、絶縁
基板１１に印刷された銅ペーストを焼成して銅厚膜配線
導体１９を形成する。このような焼成の後、従来と同様
に、絶Ｒ基板１１には、例えば熱硬化性ＡＱペースト等
の導電接着剤１２を介して半導体素子３をダイボンディ
ングする。このようにして、第４図ａに示すようなワイ
ヤボンディング前の半導体装ｔが形成される。
次に、第１図（ｂ）に示すように、絶縁基板１１を１０
０〜１５０℃に加熱し、キトピラリ１５を通した直径２
０〜５０μｍの金線１６の先端に対して放電用電極１７
を用いて放電し、金線１６の先端を溶融して直径８０μ
ｍの企ボール１８を形成づる。次に、第１図（Ｃ）に示
づように、Ｔ、Ｓ法により、金ボール１８を絶縁基板１
１上の銅厚膜配線導体１９上に前記ギヤピラリ１５の先
端で加圧し接合づる（第１ボンデイング）。次に、第１
図（ｄ）に示すように、金線１６を通したキャピラリ１
５を半導体素子１３上のアルミ電極パッド１４上へ移動
して、金線１６を銅厚膜配線導体１９からアルミ電極バ
ッド１４へ延設づる。そして、第１図（ｅ）の如く、金
線１６をＴ、Ｓ法によりアルミ電極パッド１４に接合（
第２ボンデイング）する。そして第１図（ｆ）に示づよ
うに、キャピラリ１５側の金線１６を、アルミ電極パッ
ド１５側の金線６の接合部１６ｊより引き１１１１１−
＝ｊことで、ボンディングが完了する。
第２図は第１図（ｆ）の金線１６を示す側面図である。
この図に示１ように、金ボール１８の接合部は、アルミ
？Ｉｉ極パッド１４よりも低い位賀になり、金ボール１
８から延びる金線１６に対して自然にループを形成づる
。このため、そのループによって半導体装置の高さが大
きくされることがない。
また、銅厚膜配線導体１９と金ボール１８との接合は、
接合面積を十分に広く取ることができ、線と面の接合よ
り接合強度が大きくなる。また、ボンディング時、ボン
ディング荷重や超音波出力を人キ＜シても、それによる
キャピラリ１５等の振動を金ボールが変形りることで吸
収でさ、ボンディング時の振動により接合強度が劣化し
てしまうことＦ：）ない。この場合の超ｎ波出力の強度
は第３図に示づ引張り強ｒ１１試験のグラフにおいて最
も引張り強度がｎくなる２、５Ｗと八めることがｒき、
第６図の１．０ＷＪ、り大きくすることができる。この
２．５Ｗの条例での接続強度は、最低で６１０Ｑ−ｆ程
度あり、十分に実用レベルとなる。
一方、アルミ電極バッド１４は、金線１６による線と面
の接合となるが、この接合は金−アルミ接合となるので
、十分な強度と電気的接続がｖノられる。
尚、本発明は銅す膜のみならず他の金属材料による膜導
体にも適応できる。
［発明の効果］ 以上述べた様に本発明によれば、薄形実装が可能となり
、配置９Ｑ体に銅等の卑金属を用いても、−１分な金線
の接合強度が得られる。
【図面の簡単な説明】
第１図は本発明に係る半導体装置の一実施例を示す工程
図、第２図は金線のボンディング状態を示す側面図、第
３図は上記金線の引張り強度と超音波出力の関係を示す
グラフ、第４図は従来の半導体装買の製造工程を説明す
る工程図、第５図は従来の金線のボンディング状態を示
す側面図、第６図は上記金線の引張り強度と超音波出力
の関係を示すグラフである。 １１・・・絶縁基板、１３・・・単導体素子、１４・・
・アルミ電極パッド、１５・・・キャピラリ、１６・・
・金線、１８・・・金ボール、１９・・・銅厚膜配線導
体。 、Ｏ 第２ 第３図 第４図 第５図 第６図

Claims (1)

  1. 【特許請求の範囲】 　予め配線導体が形成された絶縁基板と、 この絶縁基板に電極パッド形成面とは反対側の面を接着
    固定した半導体素子と、 一端がボール状に形成されて前記電極パッドに接続し、
    他端が前記配線導体に接続した金線とを具備したことを
    特徴とする半導体装置。
JP2085795A 1990-03-31 1990-03-31 半導体装置 Pending JPH03285336A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2085795A JPH03285336A (ja) 1990-03-31 1990-03-31 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2085795A JPH03285336A (ja) 1990-03-31 1990-03-31 半導体装置

Publications (1)

Publication Number Publication Date
JPH03285336A true JPH03285336A (ja) 1991-12-16

Family

ID=13868823

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2085795A Pending JPH03285336A (ja) 1990-03-31 1990-03-31 半導体装置

Country Status (1)

Country Link
JP (1) JPH03285336A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614113A (en) * 1995-05-05 1997-03-25 Texas Instruments Incorporated Method and apparatus for performing microelectronic bonding using a laser
CN103151280A (zh) * 2013-03-04 2013-06-12 哈尔滨工业大学（威海） 一种金丝与铜箔的连接方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614113A (en) * 1995-05-05 1997-03-25 Texas Instruments Incorporated Method and apparatus for performing microelectronic bonding using a laser
CN103151280A (zh) * 2013-03-04 2013-06-12 哈尔滨工业大学（威海） 一种金丝与铜箔的连接方法

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