US6670706B2 - Semiconductor device including a semiconductor pellet having bump electrodes connected to pad electrodes of an interconnect board and method for manufacturing same - Google Patents
Semiconductor device including a semiconductor pellet having bump electrodes connected to pad electrodes of an interconnect board and method for manufacturing same Download PDFInfo
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- US6670706B2 US6670706B2 US09/536,148 US53614800A US6670706B2 US 6670706 B2 US6670706 B2 US 6670706B2 US 53614800 A US53614800 A US 53614800A US 6670706 B2 US6670706 B2 US 6670706B2
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- electrodes
- bump electrodes
- bump
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- pad electrodes
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Definitions
- the present invention relates to a semiconductor device in which an electrical connection is made by bringing a semiconductor pellet having a bump electrode and an interconnect board made by forming a pellet electrode on a resilient insulating substrate into mutual opposition, causing the electrodes to be mutually superposed, and imparting ultrasonic vibration to the electrodes, and to a method for manufacturing such a semiconductor device.
- This reference 1 relates to a supersonic type bonding device for electrically connecting an electrode of a semiconductor pellet mounted on a lead frame with a lead of the lead frame with a fine metal wire.
- the present reference 1 provides a bonding device for transmitting supersonic vibrations to a wire bonding capillary arranged on the lead frame transporting path through a horn, characterized in that said horn is arranged at an angle of approximately 45° with respect to the lead frame feeding direction on said transporting path.
- the horn When the horn is arranged as described above, the horn extends at an angle of approximately 45° with respect to the lead free ends arranged in parallel and perpendicular to the longitudinal direction of the lead frame. At this angle, supersonic vibrations are applied to the lead free ends at the time of wire bonding, and accordingly, it is easy to uniform the wire bonding strength at the lead free ends, whereby the conventional problem is solved.
- This reference 2 relates to the art of bonding.
- an assembly of a semiconductor device as one of wire bonding systems, there is a supersonic-combined thermosonic bonding method.
- the connecting strength in the inner lead in the direction of supersonic wave is generally large, whereas in the inner lead arranged at right angles to the supersonic direction, the connecting strength is weaker than the former.
- all the inner leads are uneven in connecting strength, lacking in stability of connection.
- the reference 2 is intended to uniformize connection strength and improve the yield of wire bonding, by positioning all of the inner lead parts and the island part of a lead frame, on the diagonal lines of a frame, and performing wire bonding with ultrasonic wave. For this reason, the constitution of above reference 2 is as follows:
- Each inner lead part of a lead frame is arranged along a diagonal line X connecting the points of intersection of an outer frame and an inner frame.
- the angle between a line Y passing a tab suspension lead and the diagonal line X is 45°.
- the reference 3 is related to method and apparatus for single point bonding for TAB(Tape Automated Bonding). This method is intended to obtain a stable bonding strength at leads without irregularity even if the widths of the leads are small. For this reason, the constitution is as follows: A rotating mechanism for relatively moving one or both of a bonding tool and leads to incline a vibrating direction of the tool by an ultrasonic wave at a predetermined angle with respect to a longitudinal direction of the leads, is provided. The tool is inclined at a predetermined angle with respect to the vibrating direction to form a device opening, and a carrier tape in which leads are disposed, is conveyed.
- This reference 4 relates to a ball-bonding method.
- the method is intended to obtain a highly reliable connection whereby a semiconductor element and a board are connected and which has a large connective strength, a high allowable current value and a low connective resistance, by connecting the semiconductor element with the board through the solid phase diffusion performed between a bump formed on the semiconductor element and a wiring formed on the board, while mounting facedown the semiconductor element on the board in a short time and with a high mounting density.
- the semiconductor element is bonded to the board through a solid phase diffusion performed between a bump formed on the semiconductor element and a wiring formed on the board.
- FIG. 10 shows an example of a semiconductor device that enables high-density packaging.
- the reference numeral 1 denotes a semiconductor pellet and, as shown in FIG. 11, a large number of bump electrodes 3 are formed in a rectangular frame pattern on a main surface of a semiconductor element (not shown in the drawing) therewithin.
- the method for forming the bump electrodes 3 is selected from such methods as a method of plating with a metal such as gold, a method of melting a grain of a meltable alloy, and a method of melting a metal wire inserted into capillary so as to form a metal ball, which is pressed at the bottom end of the capillary as ultrasonic vibration is applied to make a connection, after which the metal wire is pulled away.
- the reference numeral 4 denotes an interconnection board, formed by a conductive pattern 6 on an insulating substrate 5 , as shown in FIG. 12 .
- This conductive pattern 6 is covered by a photoresist film (not shown in the drawing), and windows are formed in the photoresist film so that part of the conductive pattern (rectangular windows shown in the drawing) are exposed at locations corresponding to the bump electrodes 3 of the semiconductor pellet 1 , thereby forming the electrode pads 7 .
- the semiconductor pellet 1 and interconnection board 4 are disposed in mutual opposition to one another, so that the bump electrodes 3 and the pad electrodes 7 are superposed and electrically connected.
- the interconnection board 4 is placed on a heated table (not shown in the drawing), with the pad electrodes 7 facing upward.
- the semiconductor pellet 1 is vacuum picked, with the bump electrodes facing downward, and moved to the top of the interconnection board 4 .
- the bump electrodes 3 are superposed on the pad electrodes 7 , and the heated top surface of the semiconductor pellet 1 is pressed by the pressing tool, so as to press the electrodes 3 and 7 together, thereby making electrical connections between the semiconductor pellet 1 and the interconnection board 4 .
- the above-noted prior art discloses ceramic and also glass as the material of the interconnection board and, in addition to the construction shown in FIG. 10, disclose the ability to apply the technology to a flat display such as a liquid-crystal display device, or to a thermal head.
- the semiconductor device having the structure shown in FIG. 10, in addition to ceramic or glass, can be applied to a semiconductor device having a resin substrate such as a fiberglass epoxy resin substrate, although the heating temperature and heating time disclosed in the above-noted prior art cannot be used as is.
- a semiconductor device in which ultrasonic vibration is used to make electrical connection between bump electrodes formed on a semiconductor pellet and pad electrodes formed on an insulating substrate.
- This semiconductor device has bump electrodes on the above-noted semiconductor pellet which are arranged in at least two straight lines that mutually intersect at right angles, a neighboring region of pad electrodes formed on a resilient interconnection board and including a part superposed with the bump electrodes extending in a direction that is different from the arrangement direction of the bump electrodes.
- the present invention is also a method for manufacturing a semiconductor device having a semiconductor pellet having bump electrodes on a main surface arranged in at least two straight lines that are mutually perpendicular and a resilient interconnection board on which are formed pad electrodes at locations corresponding to the bump electrodes on an insulating substrate, the bump electrodes and pad electrodes being superposed and parallelness being maintained between the semiconductor pellet and the interconnection board as pressure is applied from above the semiconductor pellet while ultrasonic vibration is applied, thereby making an electrical connection between the semiconductor pellet and the bump electrodes.
- An interconnection board having region of pad electrodes neighboring the superposed part of the bump electrodes extends in a direction that is different from the arrangement direction of the bump electrodes is used, the direction of ultrasonic vibration imparted to the superposed part of the bump electrodes and the pad electrodes via the semiconductor pellet being set so as to follow the direction of extension of the pad electrodes.
- a semiconductor device is a semiconductor device in which bump electrodes on a semiconductor pellet and pad electrodes on an insulating substrate are caused to be superposed, and ultrasonic vibration is applied thereto to make an electrical connection.
- the bump electrodes are arranged in at least two perpendicularly intersecting straight lines of a large number of bump electrodes, and a neighboring region including the part superposed with the bump electrodes is extend in a direction that is different from the arrangement direction of the bump electrodes, an the above-noted neighboring region of the pad electrodes intersects with the bump electrode arrangement direction so as to form therewith an angle in the range 30° to 60°.
- all the pad electrodes on the interconnection board be arranged in a direction that is the same as the extension direction of the neighboring region including the part superposed with the bump electrodes.
- the length of a region that neighbors the part of the pad electrodes and bump electrodes that is superposed can be established as longer than the length of the superposed part.
- the region neighboring with the superposed region of the pad electrodes and the bump electrodes caused to extend to a region of the insulating substrate that does not deform by the application of pressure.
- a interconnection board in which a neighboring region including a superposed part between pad electrodes and bump electrodes is caused to extend in a direction that is different from the arrangement direction of the bump electrodes, the direction of ultrasonic vibration applied to the superposed part of the bump electrodes and pad electrodes via a semiconductor pellet being established along the extension direction of the pad electrodes, and it is possible to established the vibration direction of the ultrasonic vibration to an intermediate angle intersection angle between bump each of at least two lines of bump electrodes arranged in at least two straight lines and the pad electrodes.
- FIG. 1 is a side cross-section view showing a semiconductor device according to the present invention.
- FIG. 2 is a plan view of a semiconductor pellet used in the semiconductor of FIG. 1 .
- FIG. 3 is a partial plan view of an interconnection board used in the semiconductor device of FIG. 1 .
- FIG. 4 is a side cross-section view showing a method for manufacturing the semiconductor device of FIG. 1 .
- FIG. 5 is a side cross-section view showing the processes subsequent to those of FIG. 4 .
- FIG. 6 is a partial plan view showing the interconnection board and the direction of ultrasonic vibration in the process of FIG. 5 .
- FIG. 7 is a partial cross-section view showing the condition of ultrasonic vibration applied to the superposed electrode part.
- FIG. 8 is a partial cross-section view showing the condition of ultrasonic vibration applied to the superposed electrode part.
- FIG. 9 is a partial plan view showing the angle made between the electrode arrangement group and the pad electrodes.
- FIG. 10 is a side cross-section view showing an example of a semiconductor device.
- FIG. 11 is a plan view of a semiconductor pellet used in the semiconductor of FIG. 10 .
- FIG. 12 is a partial plan view showing an example of an interconnection board used in the semiconductor device of FIG. 10 .
- the reference numeral 9 denotes a semiconductor pellet, on a main surface of semiconductor substrate 10 of which, measuring 3.4 ⁇ 5.1 (shape) ⁇ 0.3 (thick) mm and having semiconductor elements (not shown in the drawing) formed on it, are arranged a large number of bump electrodes 11 .
- the bump electrodes 11 are formed, as shown in FIG. 2, in straight lines around the sides of a square or rectangular semiconductor substrate 10 in groups of electrodes A, B, C, and D, by the method of forming windows in certain parts of a protective film (not shown in the drawing) covering the semiconductor substrate 10 and plating over a barrier film (not shown in the drawing) or by the ball bonding method, the extension parts of the parallel electrode arrangement groups A & C or B & D being perpendicularly intersecting with neighboring electrode arrangement groups.
- the bump electrodes 11 of each of the electrode arrangement groups A, B, C, and D are arranged in a single circular arrangement, in order to form a larger number of electrodes, it is also possible to arrange them in staggered lines.
- the reference numeral 12 denotes an interconnection board, which is made by forming a conductive pattern 14 onto a resilient resin substrate 13 , such as one made of fiberglass reinforced epoxy, with pad electrodes 15 being formed on the conductive pattern 14 at locations corresponding to the bump electrodes 11 of the semiconductor pellet 9 .
- pad electrodes 15 are provided so as to suit the electrode material, shape, and dimensions of the bump electrodes 11 .
- bump electrodes 11 that measure 80 ⁇ m on a side and are 25 ⁇ m high
- semiconductor pellet 9 formed using gold plating on which a copper foil of thickness 12 ⁇ m is etched so as to form a conductive pattern 14
- a nickel layer having a thickness of 3 to 5 ⁇ m is formed on locations intended for use as pad electrodes 15 , these being covered to a thickness of 0.3 ⁇ m with gold to form the pad electrodes 15 on the interconnection board 12 .
- the pad electrodes 15 are in opposition with bump electrodes 11 of the semiconductor pellet 9 indicated by the broken line. Neighboring areas that include the part that is superposed with the bump electrodes 11 (hatched area in the drawing) intersect with the arrangement directions of the electrode arrangement groups A, B, C, and D at an angle of 45°, and extend in one and the same direction.
- a method for manufacturing a semiconductor device is as follows. First, an interconnection board 12 such as shown in FIG. 3 is placed on a heating table 16 such as shown in FIG. 4, positioned, and heated. In order to achieve a good ultrasonic connection between the bump electrodes 11 and the pad electrodes 15 , this interconnection board 12 is heated. In the case of a fiberglass epoxy board, which exhibits softening in the presence of heated, the heating temperature is set to 80° C.
- a vacuum holding head 17 such as shown in FIG. 5 is used to vacuum pick the semiconductor pellet 9 , and place it on the interconnection board 12 .
- the vacuum holding head 17 has a vacuum port 17 b on a flat lower end surface 17 a , and is linked to a horn which applies ultrasonic vibration, the horn moving both horizontally and up and down, so as to impart ultrasonic vibration to the semiconductor pellet 9 on the interconnection board 12 .
- the horn linked to the above-noted vacuum holding head 17 is arranged as shown in FIG. 6, this being the ultrasonic vibration direction, substantially coincides with the extension direction of the pad electrodes 15 .
- the vacuum holding head 17 is lowered over the interconnection board 12 , the bump electrodes 11 and the pad electrodes 15 being superposed, and a pressure of 30 gf per bump electrode is applied for 0.3 to 3 seconds to the semiconductor pellet 9 . Because the interconnection board 12 is heated and softened, the pad electrodes 15 are locally pressed and form a concave curvature.
- the pad electrodes 15 corresponding to all the bump electrodes 11 extend in the same direction, which is the direction of the ultrasonic vibration.
- the ultrasonic vibration applied to the bump electrodes 11 is applied in the extension direction of the pad electrodes 15 , the ultrasonic vibration applied in a direction that is perpendicular with respect to the drawing plane of FIG. 7 is not applied to the pad electrodes 15 in the width direction.
- regions neighboring the pad electrodes 15 extend to a region that is not deformed by the application of pressure to the superposed parts, the adhered length with respect to the insulating substrate 13 is sufficiently long, and even if interconnection board 12 softens by heating so that the electrode superposed parts sinks, ultrasonic vibration applied in a direction parallel to the drawing plane, this being in the extension direction of the pad electrodes 15 , is concentrated on the electrode superposed part, enabling a good electrical connection.
- all of the pad electrodes 15 in a semiconductor device according to the present invention are caused to extend in the same direction, not only can the joining strength between electrodes be made large and the electrical resistance be made small, there variations thereof can be made small, so that even without using a hard material such as a ceramic substrate or a glass substrate, it is possible even when the number of bump electrodes greatly exceeds 10, for example, in the case of a 100-electrode semiconductor pellet, to achieve a shear strength of 30 gf or greater for each bump electrode, and a low resistance connection of approximately 50 m ⁇ .
- the pad electrodes 15 were caused to extend at an angle of 45° with respect to the arrangement direction of the electrode arrangement groups A, B, C, and D, as long as the inclination angle, as shown in FIG. 9, is in the range from 30° to 60°, it is possible to achieve a good connection, with suppression of a lowering of the shear strength and an increase in electrical resistance.
- the direction of the ultrasonic vibration be made in an intermediate direction of the inclination direction, for example, if the maximum inclination angle is between 30° and 60°, the direction of the ultrasonic vibration can be made 45° with respect to the electrode arrangement groups A, B, C, and D.
- extension direction of all the pad electrodes 15 be the same, for pads such as those at the corners of the pellet, at which it is possible to achieve sufficient surface area in the superposed part, it is acceptable to have the extension direction be different from the other bump electrodes.
- bump electrodes 11 in addition to square bump electrodes 11 , it is possible to use bump electrodes that are rectangular, diamond-shaped, or parallelogram-shaped, and it is further possible to change the width and extension direction of the pad electrodes 15 to suit the inclination angle.
- the present invention enables a strong electrical and mechanical connection to a semiconductor pellet having more than 10 electrodes.
Abstract
Description
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15174499A JP3498634B2 (en) | 1999-05-31 | 1999-05-31 | Method for manufacturing semiconductor device |
JP11-151744 | 1999-05-31 | ||
JP151744/1999 | 1999-05-31 |
Publications (2)
Publication Number | Publication Date |
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US20020089057A1 US20020089057A1 (en) | 2002-07-11 |
US6670706B2 true US6670706B2 (en) | 2003-12-30 |
Family
ID=15525342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US09/536,148 Expired - Lifetime US6670706B2 (en) | 1999-05-31 | 2000-03-28 | Semiconductor device including a semiconductor pellet having bump electrodes connected to pad electrodes of an interconnect board and method for manufacturing same |
Country Status (5)
Country | Link |
---|---|
US (1) | US6670706B2 (en) |
JP (1) | JP3498634B2 (en) |
KR (1) | KR100368776B1 (en) |
CN (1) | CN1161835C (en) |
TW (1) | TW460997B (en) |
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US20030168733A1 (en) * | 2002-03-06 | 2003-09-11 | Seiko Epson Corporation | Integrated circuit chip, electronic device and method of manufacturing the same, and electronic instrument |
US20050146050A1 (en) * | 2003-11-14 | 2005-07-07 | Yu-Wen Chen | Flip chip package structure and chip structure thereof |
US20070224857A1 (en) * | 2004-12-21 | 2007-09-27 | Harper Donald K Jr | Cap for an electrical connector |
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JP4905621B2 (en) * | 2004-01-06 | 2012-03-28 | セイコーエプソン株式会社 | SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE |
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JP2007150370A (en) * | 2007-03-15 | 2007-06-14 | Seiko Epson Corp | Semiconductor module, electronic device, electronic apparatus, and process for fabricating semiconductor module |
CN104112684A (en) * | 2014-07-03 | 2014-10-22 | 上海交通大学 | Solid ultrasonic bonding method based on nickel micro cones |
CN104112681A (en) * | 2014-07-03 | 2014-10-22 | 上海交通大学 | Solid-state ultrasonic bonding method based on copper microneedle cone |
JP6451180B2 (en) * | 2014-09-26 | 2019-01-16 | 富士電機株式会社 | Semiconductor device manufacturing apparatus and semiconductor device |
KR102481381B1 (en) * | 2016-01-11 | 2022-12-27 | 삼성디스플레이 주식회사 | Flexible display device |
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Also Published As
Publication number | Publication date |
---|---|
JP2000340611A (en) | 2000-12-08 |
CN1161835C (en) | 2004-08-11 |
TW460997B (en) | 2001-10-21 |
JP3498634B2 (en) | 2004-02-16 |
KR20010006920A (en) | 2001-01-26 |
KR100368776B1 (en) | 2003-01-24 |
US20020089057A1 (en) | 2002-07-11 |
CN1275800A (en) | 2000-12-06 |
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