JPH0325946B2 - - Google Patents
Info
- Publication number
- JPH0325946B2 JPH0325946B2 JP57032006A JP3200682A JPH0325946B2 JP H0325946 B2 JPH0325946 B2 JP H0325946B2 JP 57032006 A JP57032006 A JP 57032006A JP 3200682 A JP3200682 A JP 3200682A JP H0325946 B2 JPH0325946 B2 JP H0325946B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- potential
- drain
- capacitance
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 230000005855 radiation Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
Landscapes
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57032006A JPS58148450A (ja) | 1982-02-26 | 1982-02-26 | 半導体集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57032006A JPS58148450A (ja) | 1982-02-26 | 1982-02-26 | 半導体集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58148450A JPS58148450A (ja) | 1983-09-03 |
| JPH0325946B2 true JPH0325946B2 (de) | 1991-04-09 |
Family
ID=12346791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57032006A Granted JPS58148450A (ja) | 1982-02-26 | 1982-02-26 | 半導体集積回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58148450A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0644575B2 (ja) * | 1984-07-11 | 1994-06-08 | 三菱電機株式会社 | 電界効果トランジスタ |
| JPS6249671A (ja) * | 1985-06-17 | 1987-03-04 | テキサス インスツルメンツ インコーポレイテツド | ガリウムひ素電界効果トランジスタおよびその製作方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55156461U (de) * | 1979-04-27 | 1980-11-11 | ||
| JPS55156358A (en) * | 1979-05-25 | 1980-12-05 | Hitachi Ltd | Semiconductor memory device |
| JPS5698855A (en) * | 1980-01-09 | 1981-08-08 | Nec Corp | Semiconductor memory device |
-
1982
- 1982-02-26 JP JP57032006A patent/JPS58148450A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58148450A (ja) | 1983-09-03 |
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