JPH03252988A - ダイナミック型半導体メモリ - Google Patents
ダイナミック型半導体メモリInfo
- Publication number
- JPH03252988A JPH03252988A JP2050892A JP5089290A JPH03252988A JP H03252988 A JPH03252988 A JP H03252988A JP 2050892 A JP2050892 A JP 2050892A JP 5089290 A JP5089290 A JP 5089290A JP H03252988 A JPH03252988 A JP H03252988A
- Authority
- JP
- Japan
- Prior art keywords
- input
- potential
- output
- output line
- line pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 230000006378 damage Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 13
- 230000004913 activation Effects 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 241000282887 Suidae Species 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
Landscapes
- Engineering & Computer Science (AREA)
- Databases & Information Systems (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2050892A JPH03252988A (ja) | 1990-03-02 | 1990-03-02 | ダイナミック型半導体メモリ |
| KR1019910003179A KR960001108B1 (ko) | 1990-03-02 | 1991-02-27 | 리미터를 구비한 다이나믹 랜덤 억세스 메모리 장치 |
| EP91103133A EP0444707B1 (en) | 1990-03-02 | 1991-03-01 | Dynamic random access memory device having static column mode of operation without destruction of data bit |
| DE69112668T DE69112668T2 (de) | 1990-03-02 | 1991-03-01 | Dynamische Direktzugriffsspeicheranordnung mit statischem Spaltenoperationsmodus ohne Informationsbitvernichtung. |
| US07/957,057 US5295099A (en) | 1990-03-02 | 1992-10-06 | Dynamic random access memory device having static column mode of operation without destruction of data bit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2050892A JPH03252988A (ja) | 1990-03-02 | 1990-03-02 | ダイナミック型半導体メモリ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03252988A true JPH03252988A (ja) | 1991-11-12 |
Family
ID=12871385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2050892A Pending JPH03252988A (ja) | 1990-03-02 | 1990-03-02 | ダイナミック型半導体メモリ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5295099A (enExample) |
| EP (1) | EP0444707B1 (enExample) |
| JP (1) | JPH03252988A (enExample) |
| KR (1) | KR960001108B1 (enExample) |
| DE (1) | DE69112668T2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5500829A (en) * | 1990-10-15 | 1996-03-19 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2812097B2 (ja) * | 1992-09-30 | 1998-10-15 | 日本電気株式会社 | 半導体記憶装置 |
| JP2870328B2 (ja) * | 1992-11-12 | 1999-03-17 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
| JP3359209B2 (ja) * | 1995-11-29 | 2002-12-24 | シャープ株式会社 | 半導体記憶装置及びメモリアクセス方法 |
| JP4580784B2 (ja) * | 2005-03-09 | 2010-11-17 | 株式会社東芝 | 半導体記憶装置及びそのデータ読み出し方法 |
| US7796446B2 (en) * | 2008-09-19 | 2010-09-14 | Qimonda Ag | Memory dies for flexible use and method for configuring memory dies |
| CN111912884B (zh) * | 2020-08-13 | 2023-09-08 | 南京智行信息科技有限公司 | 桥梁加固复合材料损伤识别系统 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6423490A (en) * | 1987-07-17 | 1989-01-26 | Sony Corp | Memory |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS592996B2 (ja) * | 1976-05-24 | 1984-01-21 | 株式会社日立製作所 | 半導体記憶回路 |
| JPH0793009B2 (ja) * | 1984-12-13 | 1995-10-09 | 株式会社東芝 | 半導体記憶装置 |
| JP2609211B2 (ja) * | 1987-03-16 | 1997-05-14 | シーメンス・アクチエンゲゼルシヤフト | メモリセルの検査回路装置および方法 |
| JP2644261B2 (ja) * | 1988-03-15 | 1997-08-25 | 株式会社東芝 | ダイナミック型半導体記憶装置 |
-
1990
- 1990-03-02 JP JP2050892A patent/JPH03252988A/ja active Pending
-
1991
- 1991-02-27 KR KR1019910003179A patent/KR960001108B1/ko not_active Expired - Fee Related
- 1991-03-01 EP EP91103133A patent/EP0444707B1/en not_active Expired - Lifetime
- 1991-03-01 DE DE69112668T patent/DE69112668T2/de not_active Expired - Fee Related
-
1992
- 1992-10-06 US US07/957,057 patent/US5295099A/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6423490A (en) * | 1987-07-17 | 1989-01-26 | Sony Corp | Memory |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5500829A (en) * | 1990-10-15 | 1996-03-19 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE69112668D1 (de) | 1995-10-12 |
| EP0444707A3 (enExample) | 1994-03-30 |
| KR960001108B1 (ko) | 1996-01-18 |
| EP0444707B1 (en) | 1995-09-06 |
| DE69112668T2 (de) | 1996-05-02 |
| EP0444707A2 (en) | 1991-09-04 |
| US5295099A (en) | 1994-03-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4973864A (en) | Sense circuit for use in semiconductor memory | |
| US3967252A (en) | Sense AMP for random access memory | |
| US5243573A (en) | Sense amplifier for nonvolatile semiconductor storage devices | |
| US5777935A (en) | Memory device with fast write recovery and related write recovery method | |
| US6438049B1 (en) | Variable equilibrate voltage circuit for paired digit lines | |
| JP2011129237A (ja) | 半導体装置及び半導体記憶装置 | |
| KR940006994B1 (ko) | 다이나믹 랜덤액세스메모리와 그 데이터 기록방법 | |
| US4622655A (en) | Semiconductor memory | |
| US5883846A (en) | Latch type sense amplifier having a negative feedback device | |
| JPH04214294A (ja) | Cmosプリチャージおよび等化回路 | |
| JPS63304491A (ja) | 半導体メモリ | |
| JPH03252988A (ja) | ダイナミック型半導体メモリ | |
| CN113728389A (zh) | 低功率存储器 | |
| US6859409B2 (en) | Semiconductor memory having sense amplifier architecture | |
| JPS6383991A (ja) | スタテイツク型メモリ | |
| KR960011201B1 (ko) | 다이내믹 ram | |
| US6188601B1 (en) | Ferroelectric memory device having single bit line coupled to at least one memory cell | |
| JPS61267992A (ja) | ランダムアクセスメモリ | |
| US6115308A (en) | Sense amplifier and method of using the same with pipelined read, restore and write operations | |
| US7142465B2 (en) | Semiconductor memory | |
| JPS5870485A (ja) | メモリ装置 | |
| JP2892552B2 (ja) | 半導体記憶装置 | |
| JPS6236798A (ja) | ダイナミツクランダムアクセスメモリ | |
| JPH0428096A (ja) | 不揮発性半導体記憶装置 | |
| JPH0136200B2 (enExample) |