JPH032340B2 - - Google Patents

Info

Publication number
JPH032340B2
JPH032340B2 JP56178193A JP17819381A JPH032340B2 JP H032340 B2 JPH032340 B2 JP H032340B2 JP 56178193 A JP56178193 A JP 56178193A JP 17819381 A JP17819381 A JP 17819381A JP H032340 B2 JPH032340 B2 JP H032340B2
Authority
JP
Japan
Prior art keywords
active layer
gate
gate electrode
electrode
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56178193A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5879768A (ja
Inventor
Toshiki Ehata
Michitomo Iiyama
Kenichi Kikuchi
Hideki Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP56178193A priority Critical patent/JPS5879768A/ja
Priority to DE8282300499T priority patent/DE3273695D1/de
Priority to EP82300499A priority patent/EP0057605B1/en
Priority to US06/361,070 priority patent/US4601095A/en
Priority to CA000401059A priority patent/CA1184320A/en
Publication of JPS5879768A publication Critical patent/JPS5879768A/ja
Publication of JPH032340B2 publication Critical patent/JPH032340B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H10D30/0614—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made after the completion of the source and drain regions, e.g. gate-last processes using dummy gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H10D30/0616—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made before the completion of the source and drain regions, e.g. gate-first processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP56178193A 1981-01-29 1981-11-05 ショットキゲート電界効果トランジスタの製造方法 Granted JPS5879768A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56178193A JPS5879768A (ja) 1981-11-05 1981-11-05 ショットキゲート電界効果トランジスタの製造方法
DE8282300499T DE3273695D1 (en) 1981-01-29 1982-01-29 A schottky-barrier gate field effect transistor and a process for the production of the same
EP82300499A EP0057605B1 (en) 1981-01-29 1982-01-29 A schottky-barrier gate field effect transistor and a process for the production of the same
US06/361,070 US4601095A (en) 1981-10-27 1982-03-23 Process for fabricating a Schottky-barrier gate field effect transistor
CA000401059A CA1184320A (en) 1981-10-27 1982-04-15 Schottky-barrier gate field effect transistor and a process for the production of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56178193A JPS5879768A (ja) 1981-11-05 1981-11-05 ショットキゲート電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS5879768A JPS5879768A (ja) 1983-05-13
JPH032340B2 true JPH032340B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-01-14

Family

ID=16044212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56178193A Granted JPS5879768A (ja) 1981-01-29 1981-11-05 ショットキゲート電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS5879768A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643768A (en) * 1979-09-17 1981-04-22 Matsushita Electric Ind Co Ltd Fet transistor and method of producing the same

Also Published As

Publication number Publication date
JPS5879768A (ja) 1983-05-13

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