JPH0322062B2 - - Google Patents

Info

Publication number
JPH0322062B2
JPH0322062B2 JP55181320A JP18132080A JPH0322062B2 JP H0322062 B2 JPH0322062 B2 JP H0322062B2 JP 55181320 A JP55181320 A JP 55181320A JP 18132080 A JP18132080 A JP 18132080A JP H0322062 B2 JPH0322062 B2 JP H0322062B2
Authority
JP
Japan
Prior art keywords
layer
resistor
semiconductor
alloy
trimming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55181320A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57106006A (en
Inventor
Shigeru Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55181320A priority Critical patent/JPS57106006A/ja
Priority to EP81110017A priority patent/EP0054764B1/en
Priority to DE8181110017T priority patent/DE3176458D1/de
Publication of JPS57106006A publication Critical patent/JPS57106006A/ja
Publication of JPH0322062B2 publication Critical patent/JPH0322062B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
JP55181320A 1980-12-23 1980-12-23 Method of forming resistor Granted JPS57106006A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP55181320A JPS57106006A (en) 1980-12-23 1980-12-23 Method of forming resistor
EP81110017A EP0054764B1 (en) 1980-12-23 1981-11-30 A method of trimming the resistance of a semiconductor resistor device
DE8181110017T DE3176458D1 (en) 1980-12-23 1981-11-30 A method of trimming the resistance of a semiconductor resistor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55181320A JPS57106006A (en) 1980-12-23 1980-12-23 Method of forming resistor

Publications (2)

Publication Number Publication Date
JPS57106006A JPS57106006A (en) 1982-07-01
JPH0322062B2 true JPH0322062B2 (en:Method) 1991-03-26

Family

ID=16098611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55181320A Granted JPS57106006A (en) 1980-12-23 1980-12-23 Method of forming resistor

Country Status (3)

Country Link
EP (1) EP0054764B1 (en:Method)
JP (1) JPS57106006A (en:Method)
DE (1) DE3176458D1 (en:Method)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4713680A (en) * 1986-06-30 1987-12-15 Motorola, Inc. Series resistive network
JPS63161657A (ja) * 1986-12-25 1988-07-05 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4172741A (en) * 1977-09-06 1979-10-30 National Semiconductor Corporation Method for laser trimming of bi-FET circuits
US4179310A (en) * 1978-07-03 1979-12-18 National Semiconductor Corporation Laser trim protection process
CH645208A5 (de) * 1978-10-31 1984-09-14 Bbc Brown Boveri & Cie Verfahren zur herstellung von elektrischen kontakten an halbleiterbauelementen.

Also Published As

Publication number Publication date
JPS57106006A (en) 1982-07-01
DE3176458D1 (en) 1987-10-22
EP0054764A2 (en) 1982-06-30
EP0054764B1 (en) 1987-09-16
EP0054764A3 (en) 1983-06-29

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