JPH0315852B2 - - Google Patents
Info
- Publication number
- JPH0315852B2 JPH0315852B2 JP57153617A JP15361782A JPH0315852B2 JP H0315852 B2 JPH0315852 B2 JP H0315852B2 JP 57153617 A JP57153617 A JP 57153617A JP 15361782 A JP15361782 A JP 15361782A JP H0315852 B2 JPH0315852 B2 JP H0315852B2
- Authority
- JP
- Japan
- Prior art keywords
- photothyristor
- triax
- emitting diode
- light emitting
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007787 solid Substances 0.000 claims description 10
- 230000017525 heat dissipation Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
- Thyristor Switches And Gates (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57153617A JPS5943630A (ja) | 1982-09-02 | 1982-09-02 | ソリツドステ−トリレ− |
US06/814,160 US4658145A (en) | 1982-09-02 | 1985-12-23 | Solid state relay |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57153617A JPS5943630A (ja) | 1982-09-02 | 1982-09-02 | ソリツドステ−トリレ− |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5943630A JPS5943630A (ja) | 1984-03-10 |
JPH0315852B2 true JPH0315852B2 (US06589383-20030708-C00041.png) | 1991-03-04 |
Family
ID=15566401
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57153617A Granted JPS5943630A (ja) | 1982-09-02 | 1982-09-02 | ソリツドステ−トリレ− |
Country Status (2)
Country | Link |
---|---|
US (1) | US4658145A (US06589383-20030708-C00041.png) |
JP (1) | JPS5943630A (US06589383-20030708-C00041.png) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62110317A (ja) * | 1985-11-08 | 1987-05-21 | Toshiba Corp | 固体継電器 |
JPS62179601U (US06589383-20030708-C00041.png) * | 1986-04-30 | 1987-11-14 | ||
JPS6327677A (ja) * | 1986-07-22 | 1988-02-05 | 川重工事株式会社 | 立体駐輪場構造 |
JPS63107223A (ja) * | 1986-10-23 | 1988-05-12 | Mitsubishi Electric Corp | トライアツクトリガ用光結合半導体素子 |
JPS6437136U (US06589383-20030708-C00041.png) * | 1987-08-28 | 1989-03-06 | ||
US4906858A (en) * | 1987-11-13 | 1990-03-06 | Honeywell Inc. | Controlled switching circuit |
US5136213A (en) * | 1989-06-26 | 1992-08-04 | C&K Components, Inc. | Motion detecting light controller system |
US5338991A (en) * | 1992-12-28 | 1994-08-16 | Lu Chao Cheng | High power solid state relay with input presence and polarity indication |
US20050179271A1 (en) * | 2004-02-13 | 2005-08-18 | Gerry Kerr | Golf ball retriever |
CN103346759B (zh) * | 2013-07-23 | 2016-01-13 | 郁百超 | 微功耗工频脉宽调制开关电源 |
JP6253439B2 (ja) * | 2014-02-17 | 2017-12-27 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4931593A (US06589383-20030708-C00041.png) * | 1972-07-24 | 1974-03-22 | ||
JPS5723266A (en) * | 1980-07-18 | 1982-02-06 | Nec Corp | Photocontrol semiconductor switch |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4309605A (en) * | 1979-10-02 | 1982-01-05 | New Japan Radio Co., Ltd. | Photo-reflective sensor |
JPS57193964A (en) * | 1981-05-20 | 1982-11-29 | Toshiba Corp | Switching device |
-
1982
- 1982-09-02 JP JP57153617A patent/JPS5943630A/ja active Granted
-
1985
- 1985-12-23 US US06/814,160 patent/US4658145A/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4931593A (US06589383-20030708-C00041.png) * | 1972-07-24 | 1974-03-22 | ||
JPS5723266A (en) * | 1980-07-18 | 1982-02-06 | Nec Corp | Photocontrol semiconductor switch |
Also Published As
Publication number | Publication date |
---|---|
US4658145A (en) | 1987-04-14 |
JPS5943630A (ja) | 1984-03-10 |
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