JPH0314232B2 - - Google Patents
Info
- Publication number
- JPH0314232B2 JPH0314232B2 JP60049359A JP4935985A JPH0314232B2 JP H0314232 B2 JPH0314232 B2 JP H0314232B2 JP 60049359 A JP60049359 A JP 60049359A JP 4935985 A JP4935985 A JP 4935985A JP H0314232 B2 JPH0314232 B2 JP H0314232B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- substrate
- well
- conductivity type
- parasitic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60049359A JPS61208863A (ja) | 1985-03-14 | 1985-03-14 | Cmos半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60049359A JPS61208863A (ja) | 1985-03-14 | 1985-03-14 | Cmos半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61208863A JPS61208863A (ja) | 1986-09-17 |
| JPH0314232B2 true JPH0314232B2 (OSRAM) | 1991-02-26 |
Family
ID=12828821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60049359A Granted JPS61208863A (ja) | 1985-03-14 | 1985-03-14 | Cmos半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61208863A (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0131373B1 (ko) * | 1994-06-15 | 1998-04-15 | 김주용 | 반도체 소자의 데이터 출력버퍼 |
| JPH08330431A (ja) * | 1995-05-31 | 1996-12-13 | Nec Corp | 半導体集積回路 |
-
1985
- 1985-03-14 JP JP60049359A patent/JPS61208863A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61208863A (ja) | 1986-09-17 |
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