JPH0313737B2 - - Google Patents

Info

Publication number
JPH0313737B2
JPH0313737B2 JP55147304A JP14730480A JPH0313737B2 JP H0313737 B2 JPH0313737 B2 JP H0313737B2 JP 55147304 A JP55147304 A JP 55147304A JP 14730480 A JP14730480 A JP 14730480A JP H0313737 B2 JPH0313737 B2 JP H0313737B2
Authority
JP
Japan
Prior art keywords
electric field
semiconductor
film
reactive gas
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55147304A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5771127A (en
Inventor
Shunpei Yamazaki
Jujiro Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP55147304A priority Critical patent/JPS5771127A/ja
Publication of JPS5771127A publication Critical patent/JPS5771127A/ja
Publication of JPH0313737B2 publication Critical patent/JPH0313737B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H10P14/24—
    • H10P14/2905—
    • H10P14/3411—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP55147304A 1980-10-21 1980-10-21 Manufacture of semiamorphous semiconductor Granted JPS5771127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55147304A JPS5771127A (en) 1980-10-21 1980-10-21 Manufacture of semiamorphous semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55147304A JPS5771127A (en) 1980-10-21 1980-10-21 Manufacture of semiamorphous semiconductor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58052264A Division JPS58175824A (ja) 1983-03-28 1983-03-28 プラズマ気相反応用装置

Publications (2)

Publication Number Publication Date
JPS5771127A JPS5771127A (en) 1982-05-01
JPH0313737B2 true JPH0313737B2 (cg-RX-API-DMAC10.html) 1991-02-25

Family

ID=15427163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55147304A Granted JPS5771127A (en) 1980-10-21 1980-10-21 Manufacture of semiamorphous semiconductor

Country Status (1)

Country Link
JP (1) JPS5771127A (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041453B2 (ja) * 1981-05-15 1985-09-17 工業技術院長 微結晶化非晶質シリコン膜の生成方法
JPS58175824A (ja) * 1983-03-28 1983-10-15 Semiconductor Energy Lab Co Ltd プラズマ気相反応用装置
JPH0644552B2 (ja) * 1983-03-30 1994-06-08 三井東圧化学株式会社 非晶質薄膜の製法
JP2008179466A (ja) * 2007-01-26 2008-08-07 Ss Pharmaceut Co Ltd 錠剤搬送装置

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT=1980 *
J.NON-CRYST.SOLIDS=1979 *
JAPAN.J.APPL.PHYS=1980 *

Also Published As

Publication number Publication date
JPS5771127A (en) 1982-05-01

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