JPH0313680B2 - - Google Patents
Info
- Publication number
- JPH0313680B2 JPH0313680B2 JP16868983A JP16868983A JPH0313680B2 JP H0313680 B2 JPH0313680 B2 JP H0313680B2 JP 16868983 A JP16868983 A JP 16868983A JP 16868983 A JP16868983 A JP 16868983A JP H0313680 B2 JPH0313680 B2 JP H0313680B2
- Authority
- JP
- Japan
- Prior art keywords
- dummy
- column
- row
- decoder
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011159 matrix material Substances 0.000 claims description 36
- 238000012360 testing method Methods 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 2
- 230000004044 response Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 14
- 230000006870 function Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58168689A JPS6059599A (ja) | 1983-09-13 | 1983-09-13 | 不揮発性半導体メモリ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58168689A JPS6059599A (ja) | 1983-09-13 | 1983-09-13 | 不揮発性半導体メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6059599A JPS6059599A (ja) | 1985-04-05 |
JPH0313680B2 true JPH0313680B2 (ko) | 1991-02-25 |
Family
ID=15872637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58168689A Granted JPS6059599A (ja) | 1983-09-13 | 1983-09-13 | 不揮発性半導体メモリ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6059599A (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2587531B1 (fr) * | 1985-04-26 | 1991-04-26 | Eurotechnique Sa | Memoire morte programmable electriquement une seule fois |
EP0213224B1 (en) * | 1985-08-28 | 1990-04-11 | International Business Machines Corporation | Method for rapid gain acquisition in a modem receiver |
JPS62177799A (ja) * | 1986-01-30 | 1987-08-04 | Toshiba Corp | 半導体記憶装置 |
US4749947A (en) * | 1986-03-10 | 1988-06-07 | Cross-Check Systems, Inc. | Grid-based, "cross-check" test structure for testing integrated circuits |
JPS62229600A (ja) * | 1986-03-31 | 1987-10-08 | Toshiba Corp | 不揮発性半導体記憶装置 |
JPS6334800A (ja) * | 1986-07-28 | 1988-02-15 | Nec Ic Microcomput Syst Ltd | 半導体メモリ |
JPH07105147B2 (ja) * | 1987-09-09 | 1995-11-13 | 株式会社東芝 | 半導体記憶装置 |
US5065090A (en) * | 1988-07-13 | 1991-11-12 | Cross-Check Technology, Inc. | Method for testing integrated circuits having a grid-based, "cross-check" te |
KR100704025B1 (ko) * | 2005-09-09 | 2007-04-04 | 삼성전자주식회사 | 셀스트링에 배치되는 더미셀을 가지는 불휘발성 반도체메모리 장치 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5585957A (en) * | 1978-11-25 | 1980-06-28 | Fujitsu Ltd | Logic circuit for test bit selection |
-
1983
- 1983-09-13 JP JP58168689A patent/JPS6059599A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5585957A (en) * | 1978-11-25 | 1980-06-28 | Fujitsu Ltd | Logic circuit for test bit selection |
Also Published As
Publication number | Publication date |
---|---|
JPS6059599A (ja) | 1985-04-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5233566A (en) | Address detector of a redundancy memory cell | |
EP0293339B1 (en) | Nonvolatile memory device with a high number of cycle programming endurance | |
US5200922A (en) | Redundancy circuit for high speed EPROM and flash memory devices | |
KR100264224B1 (ko) | 비휘발성 집적회로용 리던던시 방법 및 장치 | |
US6044020A (en) | Nonvolatile semiconductor memory device with a row decoder circuit | |
JP2000235797A (ja) | 半導体記憶装置 | |
US7123528B2 (en) | Flash memory device having column predecoder capable of selecting all column selection transistors and stress test method thereof | |
JP3743780B2 (ja) | フラッシュメモリ装置のロ―デコ―ダ | |
JPH0313680B2 (ko) | ||
JPH0679440B2 (ja) | 不揮発性半導体記憶装置 | |
JPH1166874A (ja) | 不揮発性半導体記憶装置 | |
US10127990B1 (en) | Non-volatile memory (NVM) with dummy rows supporting memory operations | |
KR910006997A (ko) | 기생용량에 의해 야기된 오동작을 방지하기 위한 eprom의 디코더 회로 | |
US20030095438A1 (en) | Nonvolatile semiconductor memory device having function of determining good sector | |
JPH0766675B2 (ja) | プログラマブルrom | |
US7035162B2 (en) | Memory devices including global row decoders and operating methods thereof | |
KR100313555B1 (ko) | 소거기능의테스트용테스트회로를가진비휘발성반도체메모리 | |
JPS62128099A (ja) | ワンタイムromの試験回路 | |
JPH0554684A (ja) | 半導体記憶装置 | |
JPH01155595A (ja) | 不揮発性半導体記憶装置 | |
JPH023188A (ja) | 不揮発性半導体記憶装置 | |
JPH03105794A (ja) | Epromの書き込み回路 | |
JP3868409B2 (ja) | 半導体記憶装置 | |
JPS6221200B2 (ko) | ||
JPS59135699A (ja) | 半導体記憶装置 |