JPH0312770B2 - - Google Patents
Info
- Publication number
- JPH0312770B2 JPH0312770B2 JP61254181A JP25418186A JPH0312770B2 JP H0312770 B2 JPH0312770 B2 JP H0312770B2 JP 61254181 A JP61254181 A JP 61254181A JP 25418186 A JP25418186 A JP 25418186A JP H0312770 B2 JPH0312770 B2 JP H0312770B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- alinas
- type
- impurities
- gainas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/602—Heterojunction gate electrodes for FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
- H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
Landscapes
- Junction Field-Effect Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61254181A JPS63107173A (ja) | 1986-10-24 | 1986-10-24 | 電界効果トランジスタ |
EP87115444A EP0264932A1 (en) | 1986-10-24 | 1987-10-21 | Field effect transistor |
CA000550121A CA1261977A (en) | 1986-10-24 | 1987-10-23 | Field effect transistor |
KR1019870011772A KR900008154B1 (ko) | 1986-10-24 | 1987-10-23 | 전계효과 트랜지스터 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61254181A JPS63107173A (ja) | 1986-10-24 | 1986-10-24 | 電界効果トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63107173A JPS63107173A (ja) | 1988-05-12 |
JPH0312770B2 true JPH0312770B2 (enrdf_load_html_response) | 1991-02-21 |
Family
ID=17261356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61254181A Granted JPS63107173A (ja) | 1986-10-24 | 1986-10-24 | 電界効果トランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63107173A (enrdf_load_html_response) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0230149A (ja) * | 1988-07-20 | 1990-01-31 | Sanyo Electric Co Ltd | ヘテロ接合電界効果トランジスタ |
JP2529109Y2 (ja) * | 1989-12-13 | 1997-03-19 | 株式会社シマノ | 両軸受リール |
-
1986
- 1986-10-24 JP JP61254181A patent/JPS63107173A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS63107173A (ja) | 1988-05-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0324782B2 (enrdf_load_html_response) | ||
KR920010671B1 (ko) | 반도체장치 | |
US5381027A (en) | Semiconductor device having a heterojunction and a two dimensional gas as an active layer | |
JPS6356710B2 (enrdf_load_html_response) | ||
JP2758803B2 (ja) | 電界効果トランジスタ | |
US5258631A (en) | Semiconductor device having a two-dimensional electron gas as an active layer | |
JPH0312770B2 (enrdf_load_html_response) | ||
JPS61147577A (ja) | 相補型半導体装置 | |
JPS6242569A (ja) | 電界効果型トランジスタ | |
JP2800770B2 (ja) | 電界効果トランジスタ及びその製造方法 | |
JPH0260224B2 (enrdf_load_html_response) | ||
JP3119207B2 (ja) | 共鳴トンネルトランジスタおよびその製造方法 | |
JPH09237889A (ja) | 半導体結晶積層体及びそれを用いた半導体装置 | |
JP2980630B2 (ja) | 化合物半導体装置 | |
KR900008154B1 (ko) | 전계효과 트랜지스터 | |
KR900007049B1 (ko) | 전계효과트랜지스터 | |
JPH0793323B2 (ja) | 電界効果トランジスタ | |
JP2695832B2 (ja) | ヘテロ接合型電界効果トランジスタ | |
JPS62298181A (ja) | 半導体装置 | |
JPH10107274A (ja) | トンネルトランジスタ及びその製造方法 | |
JP3210533B2 (ja) | 電界効果トランジスタの製造方法 | |
JP2890885B2 (ja) | 半導体装置およびその製造方法 | |
JPS60136380A (ja) | 半導体装置 | |
JPH04246836A (ja) | 電界効果トランジスタの製造方法および結晶成長用保護膜の形成方法 | |
JP2834172B2 (ja) | 電界効果トランジスタ |