JPH0312769B2 - - Google Patents
Info
- Publication number
- JPH0312769B2 JPH0312769B2 JP59000523A JP52384A JPH0312769B2 JP H0312769 B2 JPH0312769 B2 JP H0312769B2 JP 59000523 A JP59000523 A JP 59000523A JP 52384 A JP52384 A JP 52384A JP H0312769 B2 JPH0312769 B2 JP H0312769B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- inas
- alxga
- asysb
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 59
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 59
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 12
- 230000005669 field effect Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 14
- 230000007704 transition Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000002784 hot electron Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59000523A JPS60144979A (ja) | 1984-01-07 | 1984-01-07 | 半導体デバイス |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59000523A JPS60144979A (ja) | 1984-01-07 | 1984-01-07 | 半導体デバイス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60144979A JPS60144979A (ja) | 1985-07-31 |
| JPH0312769B2 true JPH0312769B2 (ko) | 1991-02-21 |
Family
ID=11476125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59000523A Granted JPS60144979A (ja) | 1984-01-07 | 1984-01-07 | 半導体デバイス |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60144979A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022014530A1 (ja) | 2020-07-13 | 2022-01-20 | 日油株式会社 | 無線起爆システム及び無線起爆システム用中継装置及び無線起爆システムを用いた無線起爆方法 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4827320A (en) * | 1986-09-19 | 1989-05-02 | University Of Illinois | Semiconductor device with strained InGaAs layer |
| US4987462A (en) * | 1987-01-06 | 1991-01-22 | Texas Instruments Incorporated | Power MISFET |
| US5091759A (en) * | 1989-10-30 | 1992-02-25 | Texas Instruments Incorporated | Heterostructure field effect transistor |
| JP2539268B2 (ja) * | 1989-07-12 | 1996-10-02 | 富士通株式会社 | 半導体装置 |
| JP2822547B2 (ja) * | 1990-03-06 | 1998-11-11 | 富士通株式会社 | 高電子移動度トランジスタ |
| WO1992017908A1 (en) * | 1991-03-28 | 1992-10-15 | Asahi Kasei Kogyo Kabushiki Kaisha | Field effect transistor |
| JP3173080B2 (ja) * | 1991-12-05 | 2001-06-04 | 日本電気株式会社 | 電界効果トランジスタ |
| JP3224437B2 (ja) * | 1992-11-30 | 2001-10-29 | 富士通株式会社 | Ｉｉｉ−ｖ族化合物半導体装置 |
| CN103137477B (zh) * | 2013-02-27 | 2016-01-13 | 中国科学院半导体研究所 | 在Si基上制备InP基HEMT的方法 |
-
1984
- 1984-01-07 JP JP59000523A patent/JPS60144979A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022014530A1 (ja) | 2020-07-13 | 2022-01-20 | 日油株式会社 | 無線起爆システム及び無線起爆システム用中継装置及び無線起爆システムを用いた無線起爆方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60144979A (ja) | 1985-07-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |