JPH0312391A - 分子線結晶成長装置 - Google Patents
分子線結晶成長装置Info
- Publication number
- JPH0312391A JPH0312391A JP14416889A JP14416889A JPH0312391A JP H0312391 A JPH0312391 A JP H0312391A JP 14416889 A JP14416889 A JP 14416889A JP 14416889 A JP14416889 A JP 14416889A JP H0312391 A JPH0312391 A JP H0312391A
- Authority
- JP
- Japan
- Prior art keywords
- liquid nitrogen
- shroud
- growth
- metallic foil
- nitrogen shroud
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 37
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 89
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 45
- 239000007788 liquid Substances 0.000 claims abstract description 44
- 239000011888 foil Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000007789 gas Substances 0.000 abstract description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 9
- 239000011248 coating agent Substances 0.000 abstract description 9
- 238000000576 coating method Methods 0.000 abstract description 9
- 229910002804 graphite Inorganic materials 0.000 abstract description 9
- 239000010439 graphite Substances 0.000 abstract description 9
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 6
- 239000010935 stainless steel Substances 0.000 abstract description 6
- 230000006866 deterioration Effects 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14416889A JPH0312391A (ja) | 1989-06-08 | 1989-06-08 | 分子線結晶成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14416889A JPH0312391A (ja) | 1989-06-08 | 1989-06-08 | 分子線結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0312391A true JPH0312391A (ja) | 1991-01-21 |
| JPH0517195B2 JPH0517195B2 (enrdf_load_stackoverflow) | 1993-03-08 |
Family
ID=15355783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14416889A Granted JPH0312391A (ja) | 1989-06-08 | 1989-06-08 | 分子線結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0312391A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03237085A (ja) * | 1990-02-14 | 1991-10-22 | Hitachi Ltd | 真空蒸着装置 |
-
1989
- 1989-06-08 JP JP14416889A patent/JPH0312391A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03237085A (ja) * | 1990-02-14 | 1991-10-22 | Hitachi Ltd | 真空蒸着装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0517195B2 (enrdf_load_stackoverflow) | 1993-03-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |