JPH0311107B2 - - Google Patents

Info

Publication number
JPH0311107B2
JPH0311107B2 JP56086586A JP8658681A JPH0311107B2 JP H0311107 B2 JPH0311107 B2 JP H0311107B2 JP 56086586 A JP56086586 A JP 56086586A JP 8658681 A JP8658681 A JP 8658681A JP H0311107 B2 JPH0311107 B2 JP H0311107B2
Authority
JP
Japan
Prior art keywords
region
resistance
conductivity type
resistance region
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56086586A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57201062A (en
Inventor
Mamoru Fuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56086586A priority Critical patent/JPS57201062A/ja
Priority to EP82104963A priority patent/EP0067393B1/en
Priority to DE8282104963T priority patent/DE3271344D1/de
Publication of JPS57201062A publication Critical patent/JPS57201062A/ja
Priority to US06/727,623 priority patent/US4562451A/en
Publication of JPH0311107B2 publication Critical patent/JPH0311107B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/918—Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
JP56086586A 1981-06-05 1981-06-05 Semiconductor device Granted JPS57201062A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56086586A JPS57201062A (en) 1981-06-05 1981-06-05 Semiconductor device
EP82104963A EP0067393B1 (en) 1981-06-05 1982-06-07 Semiconductor device having a resistor region with an enhanced breakdown voltage
DE8282104963T DE3271344D1 (en) 1981-06-05 1982-06-07 Semiconductor device having a resistor region with an enhanced breakdown voltage
US06/727,623 US4562451A (en) 1981-06-05 1985-04-30 Semiconductor device having a resistor region with an enhanced breakdown voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56086586A JPS57201062A (en) 1981-06-05 1981-06-05 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57201062A JPS57201062A (en) 1982-12-09
JPH0311107B2 true JPH0311107B2 (en, 2012) 1991-02-15

Family

ID=13891109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56086586A Granted JPS57201062A (en) 1981-06-05 1981-06-05 Semiconductor device

Country Status (4)

Country Link
US (1) US4562451A (en, 2012)
EP (1) EP0067393B1 (en, 2012)
JP (1) JPS57201062A (en, 2012)
DE (1) DE3271344D1 (en, 2012)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8401983A (nl) * 1984-06-22 1986-01-16 Philips Nv Halfgeleiderinrichting met verhoogde doorslagspanning.
JPS62257747A (ja) * 1986-04-30 1987-11-10 Fujitsu Ltd 半導体集積回路のシユミツト回路
US4713680A (en) * 1986-06-30 1987-12-15 Motorola, Inc. Series resistive network
JPS63253664A (ja) * 1987-04-10 1988-10-20 Sony Corp バイポ−ラトランジスタ
JP4797484B2 (ja) * 2005-07-21 2011-10-19 サンケン電気株式会社 Ｆｌｒ領域を有する半導体素子
US11152454B2 (en) * 2019-02-19 2021-10-19 Semiconductor Components Industries, Llc Method of forming a semiconductor device having a resistor and structure therefor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1140822A (en) * 1967-01-26 1969-01-22 Westinghouse Brake & Signal Semi-conductor elements
DE1953171C3 (de) * 1969-10-22 1975-09-18 Deutsche Itt Industries Gmbh, 7800 Freiburg Hochohmiger Widerstand für eine monolithisch integrierte Halbleiterschaltung
GB1358275A (en) * 1972-04-25 1974-07-03 Ferranti Ltd Semiconductor devices
US3959812A (en) * 1973-02-26 1976-05-25 Hitachi, Ltd. High-voltage semiconductor integrated circuit
JPS5023275A (en, 2012) * 1973-06-29 1975-03-12
GB1434441A (en) * 1974-06-18 1976-05-05 Signetics Corp Ion implanted resistor having controlled temperature coefficient and method
JPS5437593A (en) * 1977-08-29 1979-03-20 Nec Corp Semiconductor integrated-circuit device
JPS5478092A (en) * 1977-12-05 1979-06-21 Hitachi Ltd Lateral semiconductor device
JPS551103A (en) * 1978-06-06 1980-01-07 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor resistor
FR2445617A1 (fr) * 1978-12-28 1980-07-25 Ibm France Resistance a tension de claquage amelioree obtenue par une double implantation ionique dans un substrat semi-conducteur et son procede de fabrication
JPS55113366A (en) * 1979-02-21 1980-09-01 Shindengen Electric Mfg Co Ltd High dielectric breakdown voltage semiconductor device

Also Published As

Publication number Publication date
JPS57201062A (en) 1982-12-09
US4562451A (en) 1985-12-31
EP0067393A1 (en) 1982-12-22
DE3271344D1 (en) 1986-07-03
EP0067393B1 (en) 1986-05-28

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