JPH0311003B2 - - Google Patents
Info
- Publication number
- JPH0311003B2 JPH0311003B2 JP14621481A JP14621481A JPH0311003B2 JP H0311003 B2 JPH0311003 B2 JP H0311003B2 JP 14621481 A JP14621481 A JP 14621481A JP 14621481 A JP14621481 A JP 14621481A JP H0311003 B2 JPH0311003 B2 JP H0311003B2
- Authority
- JP
- Japan
- Prior art keywords
- polyimide
- weight
- polyimide precursor
- thin film
- magnetic head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920001721 polyimide Polymers 0.000 claims description 57
- 239000004642 Polyimide Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 20
- 239000002243 precursor Substances 0.000 claims description 16
- -1 amine compound Chemical class 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 12
- 229920000642 polymer Polymers 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 10
- 239000000696 magnetic material Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 125000000962 organic group Chemical group 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical group [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 20
- 229920005575 poly(amic acid) Polymers 0.000 description 12
- 239000002966 varnish Substances 0.000 description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000002904 solvent Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910000889 permalloy Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000002798 polar solvent Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- VVJKKWFAADXIJK-UHFFFAOYSA-N Allylamine Chemical compound NCC=C VVJKKWFAADXIJK-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- QISSLHPKTCLLDL-UHFFFAOYSA-N N-Acetylcaprolactam Chemical compound CC(=O)N1CCCCCC1=O QISSLHPKTCLLDL-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 description 1
- FSAONUPVUVBQHL-UHFFFAOYSA-N 1,3-bis(4-azidophenyl)prop-2-en-1-one Chemical compound C1=CC(N=[N+]=[N-])=CC=C1C=CC(=O)C1=CC=C(N=[N+]=[N-])C=C1 FSAONUPVUVBQHL-UHFFFAOYSA-N 0.000 description 1
- BLYXNIHKOMELAP-UHFFFAOYSA-N 1,8-Dinitropyrene Chemical compound C1=C2C([N+](=O)[O-])=CC=C(C=C3)C2=C2C3=CC=C([N+]([O-])=O)C2=C1 BLYXNIHKOMELAP-UHFFFAOYSA-N 0.000 description 1
- HWEONUWVYWIJPF-OWOJBTEDSA-N 1-azido-4-[(e)-2-(4-azidophenyl)ethenyl]benzene Chemical compound C1=CC(N=[N+]=[N-])=CC=C1\C=C\C1=CC=C(N=[N+]=[N-])C=C1 HWEONUWVYWIJPF-OWOJBTEDSA-N 0.000 description 1
- KSURUOCVQMGISN-UHFFFAOYSA-N 1-chloropleiadene-7,12-dione Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C(=O)C3=C2C1=CC=C3Cl KSURUOCVQMGISN-UHFFFAOYSA-N 0.000 description 1
- ALRLPDGCPYIVHP-UHFFFAOYSA-N 1-nitropyrene Chemical compound C1=C2C([N+](=O)[O-])=CC=C(C=C3)C2=C2C3=CC=CC2=C1 ALRLPDGCPYIVHP-UHFFFAOYSA-N 0.000 description 1
- OTXMSABUQSQAOY-UHFFFAOYSA-N 2,6-bis[(4-azidophenyl)methylidene]-4-(hydroxymethyl)cyclohexan-1-one Chemical compound O=C1C(=CC=2C=CC(=CC=2)N=[N+]=[N-])CC(CO)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 OTXMSABUQSQAOY-UHFFFAOYSA-N 0.000 description 1
- QUVZIPHUYYZGMW-UHFFFAOYSA-N 2,6-bis[(4-azidophenyl)methylidene]-4-hydroxycyclohexan-1-one Chemical compound O=C1C(=CC=2C=CC(=CC=2)N=[N+]=[N-])CC(O)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 QUVZIPHUYYZGMW-UHFFFAOYSA-N 0.000 description 1
- MLIWQXBKMZNZNF-UHFFFAOYSA-N 2,6-bis[(4-azidophenyl)methylidene]-4-methylcyclohexan-1-one Chemical compound O=C1C(=CC=2C=CC(=CC=2)N=[N+]=[N-])CC(C)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 MLIWQXBKMZNZNF-UHFFFAOYSA-N 0.000 description 1
- UZNOMHUYXSAUPB-UHFFFAOYSA-N 2,6-bis[(4-azidophenyl)methylidene]cyclohexan-1-one Chemical compound C1=CC(N=[N+]=[N-])=CC=C1C=C(CCC1)C(=O)C1=CC1=CC=C(N=[N+]=[N-])C=C1 UZNOMHUYXSAUPB-UHFFFAOYSA-N 0.000 description 1
- VIOJQIODAWEIFL-UHFFFAOYSA-N 2,6-bis[3-(4-azidophenyl)prop-2-enylidene]-4-(hydroxymethyl)cyclohexan-1-one Chemical compound O=C1C(=CC=CC=2C=CC(=CC=2)N=[N+]=[N-])CC(CO)CC1=CC=CC1=CC=C(N=[N+]=[N-])C=C1 VIOJQIODAWEIFL-UHFFFAOYSA-N 0.000 description 1
- BWJAQVSVFPHGSU-UHFFFAOYSA-N 2-(dimethylamino)ethyl 3-phenylprop-2-enoate Chemical compound CN(C)CCOC(=O)C=CC1=CC=CC=C1 BWJAQVSVFPHGSU-UHFFFAOYSA-N 0.000 description 1
- XEEQBBXEZSNIQV-UHFFFAOYSA-N 2-chloro-4-iodo-5-(trifluoromethyl)pyridine Chemical compound FC(F)(F)C1=CN=C(Cl)C=C1I XEEQBBXEZSNIQV-UHFFFAOYSA-N 0.000 description 1
- YQUDMNIUBTXLSX-UHFFFAOYSA-N 2-ethenyl-5-ethylpyridine Chemical compound CCC1=CC=C(C=C)N=C1 YQUDMNIUBTXLSX-UHFFFAOYSA-N 0.000 description 1
- VMWGBWNAHAUQIO-UHFFFAOYSA-N 2-ethenyl-6-methylpyridine Chemical compound CC1=CC=CC(C=C)=N1 VMWGBWNAHAUQIO-UHFFFAOYSA-N 0.000 description 1
- LDCWGVLBCJEQMT-UHFFFAOYSA-N 2-methyl-n-(2-methylprop-2-enyl)prop-2-en-1-amine Chemical compound CC(=C)CNCC(C)=C LDCWGVLBCJEQMT-UHFFFAOYSA-N 0.000 description 1
- PDLOGTOXFRBJKR-UHFFFAOYSA-N 2-methylbut-2-en-1-amine Chemical compound CC=C(C)CN PDLOGTOXFRBJKR-UHFFFAOYSA-N 0.000 description 1
- XFOHWECQTFIEIX-UHFFFAOYSA-N 2-nitrofluorene Chemical compound C1=CC=C2C3=CC=C([N+](=O)[O-])C=C3CC2=C1 XFOHWECQTFIEIX-UHFFFAOYSA-N 0.000 description 1
- KRQAKTLJNCKGLB-UHFFFAOYSA-N 2-pyridin-4-ylprop-2-en-1-ol Chemical compound OCC(=C)C1=CC=NC=C1 KRQAKTLJNCKGLB-UHFFFAOYSA-N 0.000 description 1
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 1
- UFQHFMGRRVQFNA-UHFFFAOYSA-N 3-(dimethylamino)propyl prop-2-enoate Chemical compound CN(C)CCCOC(=O)C=C UFQHFMGRRVQFNA-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- AKDJZAVMDJYMIT-UHFFFAOYSA-N 4-but-3-enylpyridine Chemical compound C=CCCC1=CC=NC=C1 AKDJZAVMDJYMIT-UHFFFAOYSA-N 0.000 description 1
- HACPSRQILQUBMY-UHFFFAOYSA-N 4-nona-3,5-dien-5-ylpyridine Chemical compound CCCC=C(C=CCC)C1=CC=NC=C1 HACPSRQILQUBMY-UHFFFAOYSA-N 0.000 description 1
- HXUCXSUBYFYBSX-UHFFFAOYSA-N 6-azido-2-[2-(4-azidophenyl)ethenyl]-1,3-benzothiazole Chemical compound C1=CC(N=[N+]=[N-])=CC=C1C=CC1=NC2=CC=C(N=[N+]=[N-])C=C2S1 HXUCXSUBYFYBSX-UHFFFAOYSA-N 0.000 description 1
- OXLFRTRHKMUIHO-UHFFFAOYSA-N 6-azido-2-[2-(4-azidophenyl)ethenyl]-1h-benzimidazole Chemical compound C1=CC(N=[N+]=[N-])=CC=C1C=CC1=NC2=CC=C(N=[N+]=[N-])C=C2N1 OXLFRTRHKMUIHO-UHFFFAOYSA-N 0.000 description 1
- HUKPVYBUJRAUAG-UHFFFAOYSA-N 7-benzo[a]phenalenone Chemical compound C1=CC(C(=O)C=2C3=CC=CC=2)=C2C3=CC=CC2=C1 HUKPVYBUJRAUAG-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- QSQQPMHPCBLLGX-UHFFFAOYSA-N N-methyl-4-[2-(phenylmethyl)phenoxy]-1-butanamine Chemical compound CNCCCCOC1=CC=CC=C1CC1=CC=CC=C1 QSQQPMHPCBLLGX-UHFFFAOYSA-N 0.000 description 1
- YFPSDOXLHBDCOR-UHFFFAOYSA-N Pyrene-1,6-dione Chemical compound C1=CC(C(=O)C=C2)=C3C2=CC=C2C(=O)C=CC1=C32 YFPSDOXLHBDCOR-UHFFFAOYSA-N 0.000 description 1
- XUGUHTGSMPZQIW-UHFFFAOYSA-N [[4-(4-diazonioiminocyclohexa-2,5-dien-1-ylidene)cyclohexa-2,5-dien-1-ylidene]hydrazinylidene]azanide Chemical group C1=CC(N=[N+]=[N-])=CC=C1C1=CC=C(N=[N+]=[N-])C=C1 XUGUHTGSMPZQIW-UHFFFAOYSA-N 0.000 description 1
- XDIFOIHGJGSGQB-UHFFFAOYSA-N acridine-1-carbonitrile Chemical compound C1=CC=C2C=C3C(C#N)=CC=CC3=NC2=C1 XDIFOIHGJGSGQB-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- LHMRXAIRPKSGDE-UHFFFAOYSA-N benzo[a]anthracene-7,12-dione Chemical compound C1=CC2=CC=CC=C2C2=C1C(=O)C1=CC=CC=C1C2=O LHMRXAIRPKSGDE-UHFFFAOYSA-N 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 1
- 150000003949 imides Chemical group 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- XKOXLTJTIGHINE-UHFFFAOYSA-N n,n-bis(but-2-enyl)but-2-en-1-amine Chemical compound CC=CCN(CC=CC)CC=CC XKOXLTJTIGHINE-UHFFFAOYSA-N 0.000 description 1
- WGESLFUSXZBFQF-UHFFFAOYSA-N n-methyl-n-prop-2-enylprop-2-en-1-amine Chemical compound C=CCN(C)CC=C WGESLFUSXZBFQF-UHFFFAOYSA-N 0.000 description 1
- DYUWTXWIYMHBQS-UHFFFAOYSA-N n-prop-2-enylprop-2-en-1-amine Chemical compound C=CCNCC=C DYUWTXWIYMHBQS-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000006864 oxidative decomposition reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- FFYDECGONJKNQH-UHFFFAOYSA-N pent-2-en-2-amine Chemical compound CCC=C(C)N FFYDECGONJKNQH-UHFFFAOYSA-N 0.000 description 1
- HSFHMJJDUVEWRQ-UHFFFAOYSA-N penta-2,4-dien-1-amine Chemical compound NCC=CC=C HSFHMJJDUVEWRQ-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000001572 propyl (E)-3-phenylprop-2-enoate Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- VPYJNCGUESNPMV-UHFFFAOYSA-N triallylamine Chemical compound C=CCN(CC=C)CC=C VPYJNCGUESNPMV-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14621481A JPS5850617A (ja) | 1981-09-18 | 1981-09-18 | 薄膜磁気ヘツドの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14621481A JPS5850617A (ja) | 1981-09-18 | 1981-09-18 | 薄膜磁気ヘツドの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5850617A JPS5850617A (ja) | 1983-03-25 |
JPH0311003B2 true JPH0311003B2 (enrdf_load_stackoverflow) | 1991-02-15 |
Family
ID=15402685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14621481A Granted JPS5850617A (ja) | 1981-09-18 | 1981-09-18 | 薄膜磁気ヘツドの製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5850617A (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0695370B2 (ja) * | 1984-03-08 | 1994-11-24 | 株式会社ケンウッド | 薄膜磁気ヘッドのパターン形成法 |
US4598868A (en) * | 1984-10-12 | 1986-07-08 | Sasaki Nouki Kabushiki Kaisha | Fertilizer spreader having dispersing space formed between front end outlet and a clash part |
JPH07101484B2 (ja) * | 1985-02-18 | 1995-11-01 | 株式会社日立製作所 | 磁気ヘツド |
JPH07101485B2 (ja) * | 1986-05-21 | 1995-11-01 | 株式会社日立製作所 | 薄膜磁気ヘツド |
JPH0827913B2 (ja) * | 1987-02-02 | 1996-03-21 | 株式会社日立製作所 | 薄膜磁気ヘツドの製造方法 |
-
1981
- 1981-09-18 JP JP14621481A patent/JPS5850617A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5850617A (ja) | 1983-03-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3995253B2 (ja) | 感光性ポリイミドパターンの形成方法及び該パターンを有する電子素子 | |
JP2020056934A (ja) | パターン硬化膜の製造方法、感光性樹脂組成物、硬化膜、層間絶縁膜、カバーコート層、表面保護膜及び電子部品 | |
JPH0311003B2 (enrdf_load_stackoverflow) | ||
JPH08250400A (ja) | シリコーン樹脂の除去法 | |
JP2022133300A (ja) | ポリイミド前駆体の製造方法、感光性樹脂組成物の製造方法、パターン硬化物の製造方法、層間絶縁膜、カバーコート層又は表面保護膜の製造方法、及び電子部品の製造方法 | |
JPS6243544B2 (enrdf_load_stackoverflow) | ||
JPH1039510A (ja) | ネガ型フォトレジスト組成物及びその利用 | |
JP2949813B2 (ja) | 化学線感応性重合体組成物 | |
JP5099979B2 (ja) | ネガ型感光性樹脂組成物、パターンの製造方法及び電子部品 | |
JPS60121740A (ja) | 多層配線構造体 | |
JPH0658534B2 (ja) | 化学線感応性重合体組成物 | |
JPH03133132A (ja) | 導電体パターン形成方法 | |
JP3279005B2 (ja) | 化学線感応性重合体組成物 | |
JPS6389846A (ja) | 熱安定性構造化層の製造方法 | |
JPH06295063A (ja) | 化学線感応性重合体組成物 | |
US20130143011A1 (en) | Photosensitive resin composition | |
WO2007148384A1 (ja) | ネガ型感光性樹脂組成物、パターンの製造方法及び電子部品 | |
JP2001022063A (ja) | 感光性樹脂組成物及び回路基板 | |
JP7035632B2 (ja) | 感光性樹脂組成物、パターン硬化膜の製造方法、硬化膜、層間絶縁膜、カバーコート層、表面保護膜及び電子部品 | |
JPH10175265A (ja) | 絶縁膜及びその製造方法 | |
JPH06181264A (ja) | 配線構造体及びその製造方法 | |
JPS6337823B2 (enrdf_load_stackoverflow) | ||
JPH08137105A (ja) | 感光性樹脂組成物およびパターンの製造法 | |
JPH05214046A (ja) | 配線構造体 | |
JPH0844060A (ja) | 感光性樹脂組成物およびパターンの製造法 |