JPH029549Y2 - - Google Patents

Info

Publication number
JPH029549Y2
JPH029549Y2 JP1982094245U JP9424582U JPH029549Y2 JP H029549 Y2 JPH029549 Y2 JP H029549Y2 JP 1982094245 U JP1982094245 U JP 1982094245U JP 9424582 U JP9424582 U JP 9424582U JP H029549 Y2 JPH029549 Y2 JP H029549Y2
Authority
JP
Japan
Prior art keywords
electrode
film
convex curved
plasma cvd
curved surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1982094245U
Other languages
English (en)
Japanese (ja)
Other versions
JPS58196838U (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9424582U priority Critical patent/JPS58196838U/ja
Publication of JPS58196838U publication Critical patent/JPS58196838U/ja
Application granted granted Critical
Publication of JPH029549Y2 publication Critical patent/JPH029549Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP9424582U 1982-06-23 1982-06-23 プラズマｃｖｄ装置 Granted JPS58196838U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9424582U JPS58196838U (ja) 1982-06-23 1982-06-23 プラズマｃｖｄ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9424582U JPS58196838U (ja) 1982-06-23 1982-06-23 プラズマｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPS58196838U JPS58196838U (ja) 1983-12-27
JPH029549Y2 true JPH029549Y2 (cs) 1990-03-09

Family

ID=30225682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9424582U Granted JPS58196838U (ja) 1982-06-23 1982-06-23 プラズマｃｖｄ装置

Country Status (1)

Country Link
JP (1) JPS58196838U (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5817646B2 (ja) * 2012-05-29 2015-11-18 株式会社島津製作所 サンプルホルダ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55115336A (en) * 1979-02-26 1980-09-05 Anelva Corp Plasma cvd electrode

Also Published As

Publication number Publication date
JPS58196838U (ja) 1983-12-27

Similar Documents

Publication Publication Date Title
JPH0428791B2 (cs)
TW307027B (en) Process for reducing circuit damage during pecvd in single wafer pecvd system
JPH029549Y2 (cs)
JPS5772321A (en) Manufacture of seiconductor device
JPS62189725A (ja) プラズマｃｖｄ装置
JPH02268430A (ja) プラズマ処理装置
JPH02290984A (ja) プラズマ装置
JPS59172716A (ja) 半導体製造方法
JPS603128A (ja) プラズマ酸化装置
JPS58171822A (ja) ドライエツチング方法
JPH0529275A (ja) プラズマエツチング方法及び装置
JPH01238120A (ja) エッチング装置
JPS5856339A (ja) プラズマエツチング装置
JPS62224029A (ja) 半導体製造装置
JPH02122625A (ja) 半導体装置の製造方法とその製造装置
JPH0620156B2 (ja) 太陽電池製造装置
JPS5810830A (ja) ドライエツチング装置
JPS583635A (ja) プラズマ中化学気相成長装置
JPH0451473Y2 (cs)
JPH10242116A (ja) 平行平板型ｒｉｅ装置
JP2797351B2 (ja) 半導体集積回路の製造方法
JPH03129821A (ja) 半導体装置の製造方法
JPS6248022A (ja) 半導体基板エツチング装置
JPS62150829A (ja) 半導体装置の製造方法
JPS59161828A (ja) 反応装置