JPH0261150B2 - - Google Patents

Info

Publication number
JPH0261150B2
JPH0261150B2 JP58112876A JP11287683A JPH0261150B2 JP H0261150 B2 JPH0261150 B2 JP H0261150B2 JP 58112876 A JP58112876 A JP 58112876A JP 11287683 A JP11287683 A JP 11287683A JP H0261150 B2 JPH0261150 B2 JP H0261150B2
Authority
JP
Japan
Prior art keywords
layer
inas
gasb
alsb
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58112876A
Other languages
English (en)
Japanese (ja)
Other versions
JPS605572A (ja
Inventor
Hideki Hayashi
Juichi Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58112876A priority Critical patent/JPS605572A/ja
Publication of JPS605572A publication Critical patent/JPS605572A/ja
Publication of JPH0261150B2 publication Critical patent/JPH0261150B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP58112876A 1983-06-24 1983-06-24 高速半導体デバイスの製造方法 Granted JPS605572A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58112876A JPS605572A (ja) 1983-06-24 1983-06-24 高速半導体デバイスの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58112876A JPS605572A (ja) 1983-06-24 1983-06-24 高速半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
JPS605572A JPS605572A (ja) 1985-01-12
JPH0261150B2 true JPH0261150B2 (enrdf_load_stackoverflow) 1990-12-19

Family

ID=14597740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58112876A Granted JPS605572A (ja) 1983-06-24 1983-06-24 高速半導体デバイスの製造方法

Country Status (1)

Country Link
JP (1) JPS605572A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2796113B2 (ja) * 1989-03-20 1998-09-10 富士通株式会社 半導体装置
DE69223706T2 (de) * 1991-03-28 1998-08-20 Asahi Chemical Ind Feldeffekttransistor

Also Published As

Publication number Publication date
JPS605572A (ja) 1985-01-12

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