JPS605572A - 高速半導体デバイスの製造方法 - Google Patents

高速半導体デバイスの製造方法

Info

Publication number
JPS605572A
JPS605572A JP58112876A JP11287683A JPS605572A JP S605572 A JPS605572 A JP S605572A JP 58112876 A JP58112876 A JP 58112876A JP 11287683 A JP11287683 A JP 11287683A JP S605572 A JPS605572 A JP S605572A
Authority
JP
Japan
Prior art keywords
layer
grown
gasb
inas
alsb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58112876A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0261150B2 (enrdf_load_stackoverflow
Inventor
Hideki Hayashi
秀樹 林
Yuichi Matsui
松居　裕一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58112876A priority Critical patent/JPS605572A/ja
Publication of JPS605572A publication Critical patent/JPS605572A/ja
Publication of JPH0261150B2 publication Critical patent/JPH0261150B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP58112876A 1983-06-24 1983-06-24 高速半導体デバイスの製造方法 Granted JPS605572A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58112876A JPS605572A (ja) 1983-06-24 1983-06-24 高速半導体デバイスの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58112876A JPS605572A (ja) 1983-06-24 1983-06-24 高速半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
JPS605572A true JPS605572A (ja) 1985-01-12
JPH0261150B2 JPH0261150B2 (enrdf_load_stackoverflow) 1990-12-19

Family

ID=14597740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58112876A Granted JPS605572A (ja) 1983-06-24 1983-06-24 高速半導体デバイスの製造方法

Country Status (1)

Country Link
JP (1) JPS605572A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246342A (ja) * 1989-03-20 1990-10-02 Fujitsu Ltd 半導体装置
US5430310A (en) * 1991-03-28 1995-07-04 Asahi Kasei Kogyo Kabushiki Kaisha Field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246342A (ja) * 1989-03-20 1990-10-02 Fujitsu Ltd 半導体装置
US5430310A (en) * 1991-03-28 1995-07-04 Asahi Kasei Kogyo Kabushiki Kaisha Field effect transistor

Also Published As

Publication number Publication date
JPH0261150B2 (enrdf_load_stackoverflow) 1990-12-19

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