JPH0260221B2 - - Google Patents
Info
- Publication number
- JPH0260221B2 JPH0260221B2 JP61069633A JP6963386A JPH0260221B2 JP H0260221 B2 JPH0260221 B2 JP H0260221B2 JP 61069633 A JP61069633 A JP 61069633A JP 6963386 A JP6963386 A JP 6963386A JP H0260221 B2 JPH0260221 B2 JP H0260221B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- channel forming
- gate layer
- forming region
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/602—Heterojunction gate electrodes for FETs
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61069633A JPS62224978A (ja) | 1986-03-27 | 1986-03-27 | 電界効果トランジスタおよびそれを用いた集積回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61069633A JPS62224978A (ja) | 1986-03-27 | 1986-03-27 | 電界効果トランジスタおよびそれを用いた集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62224978A JPS62224978A (ja) | 1987-10-02 |
JPH0260221B2 true JPH0260221B2 (enrdf_load_stackoverflow) | 1990-12-14 |
Family
ID=13408457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61069633A Granted JPS62224978A (ja) | 1986-03-27 | 1986-03-27 | 電界効果トランジスタおよびそれを用いた集積回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62224978A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013239735A (ja) * | 2013-07-29 | 2013-11-28 | Panasonic Corp | 電界効果トランジスタ |
-
1986
- 1986-03-27 JP JP61069633A patent/JPS62224978A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS62224978A (ja) | 1987-10-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3135939B2 (ja) | Hemt型半導体装置 | |
US10211328B2 (en) | Normally-off cubic phase GaN (c-GaN) HEMT having a gate electrode dielectrically insulated from a c-AlGaN capping layer | |
US12205951B2 (en) | Complementary metal oxide semiconductor device | |
JPH0554270B2 (enrdf_load_stackoverflow) | ||
US9768289B2 (en) | Field effect transistor with conduction band electron channel and uni-terminal response | |
JPH025302B2 (enrdf_load_stackoverflow) | ||
JPH0260221B2 (enrdf_load_stackoverflow) | ||
KR102767182B1 (ko) | 산화물 반도체를 포함하는 cmos 로직 소자 | |
US20230006054A1 (en) | Tunnel field effect transistor and ternary inverter including the same | |
KR100540404B1 (ko) | 반도체 장치 | |
JPH0371775B2 (enrdf_load_stackoverflow) | ||
JP2655594B2 (ja) | 集積型半導体装置 | |
US20250107226A1 (en) | Ternary cmos device | |
US4639752A (en) | Fast ternary (GaInAs) logic gate device | |
EP0093557A2 (en) | High-speed complementary semiconductor integrated circuit | |
US20250126808A1 (en) | Cmos device with multiple channels vertically stacked | |
KR102853651B1 (ko) | 2차원 물질을 이용한 수직 적층된 3진법 cmos 소자 및 이의 제조 방법 | |
JP4595128B2 (ja) | 4端子型ダブルゲート電界効果トランジスタ | |
KR20250075493A (ko) | 2차원 물질을 이용한 수직 적층된 3진법 cmos 소자 및 이의 제조 방법 | |
JPH0695532B2 (ja) | 半導体装置 | |
JPH0695531B2 (ja) | 電界効果型トランジスタ | |
KR0127269B1 (ko) | 밴드갭 차이를 이용한 상보형 모스트랜지스터 | |
JPH04370977A (ja) | 量子化電界効果トランジスタ | |
JP2768794B2 (ja) | 半導体装置 | |
KR20250034372A (ko) | 논리 게이트 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |