JPS62224978A - 電界効果トランジスタおよびそれを用いた集積回路 - Google Patents

電界効果トランジスタおよびそれを用いた集積回路

Info

Publication number
JPS62224978A
JPS62224978A JP61069633A JP6963386A JPS62224978A JP S62224978 A JPS62224978 A JP S62224978A JP 61069633 A JP61069633 A JP 61069633A JP 6963386 A JP6963386 A JP 6963386A JP S62224978 A JPS62224978 A JP S62224978A
Authority
JP
Japan
Prior art keywords
semiconductor
gate layer
channel forming
region
forming region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61069633A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0260221B2 (enrdf_load_stackoverflow
Inventor
Kazuhiko Matsumoto
和彦 松本
Noburo Hashizume
橋爪　信郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP61069633A priority Critical patent/JPS62224978A/ja
Publication of JPS62224978A publication Critical patent/JPS62224978A/ja
Publication of JPH0260221B2 publication Critical patent/JPH0260221B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/602—Heterojunction gate electrodes for FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP61069633A 1986-03-27 1986-03-27 電界効果トランジスタおよびそれを用いた集積回路 Granted JPS62224978A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61069633A JPS62224978A (ja) 1986-03-27 1986-03-27 電界効果トランジスタおよびそれを用いた集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61069633A JPS62224978A (ja) 1986-03-27 1986-03-27 電界効果トランジスタおよびそれを用いた集積回路

Publications (2)

Publication Number Publication Date
JPS62224978A true JPS62224978A (ja) 1987-10-02
JPH0260221B2 JPH0260221B2 (enrdf_load_stackoverflow) 1990-12-14

Family

ID=13408457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61069633A Granted JPS62224978A (ja) 1986-03-27 1986-03-27 電界効果トランジスタおよびそれを用いた集積回路

Country Status (1)

Country Link
JP (1) JPS62224978A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013239735A (ja) * 2013-07-29 2013-11-28 Panasonic Corp 電界効果トランジスタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013239735A (ja) * 2013-07-29 2013-11-28 Panasonic Corp 電界効果トランジスタ

Also Published As

Publication number Publication date
JPH0260221B2 (enrdf_load_stackoverflow) 1990-12-14

Similar Documents

Publication Publication Date Title
CN104934478B (zh) 高性能的鳍式场效应晶体管
US12205951B2 (en) Complementary metal oxide semiconductor device
JPS6068654A (ja) 半導体集積回路
JPH0554270B2 (enrdf_load_stackoverflow)
JPH0260064B2 (enrdf_load_stackoverflow)
JPS58119671A (ja) 電界効果トランジスタ
Satyanarayana et al. Device and circuit level design, characterization and implementation of low power 7T SRAM cell using heterojunction tunneling transistors with oxide overlap
JPS62224978A (ja) 電界効果トランジスタおよびそれを用いた集積回路
JPS6134266B2 (enrdf_load_stackoverflow)
Cheng et al. High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs
KR102353506B1 (ko) 양자 와이어 공진 터널링 트랜지스터
CN118335797B (zh) 半导体结构和半导体器件
JP2655594B2 (ja) 集積型半導体装置
US20250254905A1 (en) Trench-shaped ternary cmos device
TWI392234B (zh) 僅包括ｎｍｏｓ電晶體之邏輯閘
JPS6238864B2 (enrdf_load_stackoverflow)
JPH04320063A (ja) 薄膜トランジスタ
JPS62209864A (ja) 半導体装置
JPH04370977A (ja) 量子化電界効果トランジスタ
WO2023159390A1 (zh) 半导体器件及其制造方法
KR950003238B1 (ko) 다중-전극을 이용한 논리소자의 구조
JP2852046B2 (ja) 半導体装置
JPS62136080A (ja) 相補型高速半導体装置
JPS60136380A (ja) 半導体装置
JPH0695531B2 (ja) 電界効果型トランジスタ

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term