JPH0371775B2 - - Google Patents

Info

Publication number
JPH0371775B2
JPH0371775B2 JP57141047A JP14104782A JPH0371775B2 JP H0371775 B2 JPH0371775 B2 JP H0371775B2 JP 57141047 A JP57141047 A JP 57141047A JP 14104782 A JP14104782 A JP 14104782A JP H0371775 B2 JPH0371775 B2 JP H0371775B2
Authority
JP
Japan
Prior art keywords
semiconductor
semiconductor layer
doped
region
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57141047A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5931072A (ja
Inventor
Takayuki Sugata
Yoshifumi Takanashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57141047A priority Critical patent/JPS5931072A/ja
Publication of JPS5931072A publication Critical patent/JPS5931072A/ja
Publication of JPH0371775B2 publication Critical patent/JPH0371775B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57141047A 1982-08-16 1982-08-16 高移動度電界効果トランジスタ Granted JPS5931072A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57141047A JPS5931072A (ja) 1982-08-16 1982-08-16 高移動度電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57141047A JPS5931072A (ja) 1982-08-16 1982-08-16 高移動度電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS5931072A JPS5931072A (ja) 1984-02-18
JPH0371775B2 true JPH0371775B2 (enrdf_load_stackoverflow) 1991-11-14

Family

ID=15283010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57141047A Granted JPS5931072A (ja) 1982-08-16 1982-08-16 高移動度電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS5931072A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61280674A (ja) * 1985-06-06 1986-12-11 Nec Corp 半導体装置
JPH0763051B2 (ja) * 1986-02-27 1995-07-05 株式会社日立製作所 半導体装置
US4908325A (en) * 1985-09-15 1990-03-13 Trw Inc. Method of making heterojunction transistors with wide band-gap stop etch layer
US4987462A (en) * 1987-01-06 1991-01-22 Texas Instruments Incorporated Power MISFET
US5091759A (en) * 1989-10-30 1992-02-25 Texas Instruments Incorporated Heterostructure field effect transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2913068A1 (de) * 1979-04-02 1980-10-23 Max Planck Gesellschaft Heterostruktur-halbleiterkoerper und verwendung hierfuer

Also Published As

Publication number Publication date
JPS5931072A (ja) 1984-02-18

Similar Documents

Publication Publication Date Title
US4484207A (en) Static induction transistor and semiconductor integrated circuit using hetero-junction
US4712122A (en) Heterojunction gate ballistic JFET with channel thinner than Debye length
JPH024140B2 (enrdf_load_stackoverflow)
US4903091A (en) Heterojunction transistor having bipolar characteristics
US4870469A (en) Tunnel injection type static transistor and its integrated circuit
JPH0371775B2 (enrdf_load_stackoverflow)
JPH0665217B2 (ja) トランジスタ
US5293084A (en) High speed logic circuit
JPS59184573A (ja) 電界効果トランジスタ
Luryi Induced base transistor
JP3107325B2 (ja) 半導体結合超伝導素子
JP2587722B2 (ja) トンネル注入型静電誘導トランジスタ
JPH0459785B2 (enrdf_load_stackoverflow)
JPS6230380A (ja) 電界効果型トランジスタ
US5895931A (en) Semiconductor device
JP2655594B2 (ja) 集積型半導体装置
JPH023547B2 (enrdf_load_stackoverflow)
JP3245657B2 (ja) ヘテロ接合型電界効果トランジスタ
KR960015325B1 (ko) 쌍극자 전위 장벽을 갖는 전계효과 트랜지스터
JP2827595B2 (ja) 半導体装置
JPH0695531B2 (ja) 電界効果型トランジスタ
JP3583793B2 (ja) 半導体素子
JPS62209866A (ja) 半導体装置
JPS6159877A (ja) 半導体集積回路
JPH03116738A (ja) 電界効果トランジスタ