JPH023547B2 - - Google Patents

Info

Publication number
JPH023547B2
JPH023547B2 JP55038471A JP3847180A JPH023547B2 JP H023547 B2 JPH023547 B2 JP H023547B2 JP 55038471 A JP55038471 A JP 55038471A JP 3847180 A JP3847180 A JP 3847180A JP H023547 B2 JPH023547 B2 JP H023547B2
Authority
JP
Japan
Prior art keywords
region
gate
drain
channel
impurity density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55038471A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56134779A (en
Inventor
Junichi Nishizawa
Tadahiro Oomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP3847180A priority Critical patent/JPS56134779A/ja
Publication of JPS56134779A publication Critical patent/JPS56134779A/ja
Publication of JPH023547B2 publication Critical patent/JPH023547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP3847180A 1980-03-25 1980-03-25 Semiconductor integrated circuit Granted JPS56134779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3847180A JPS56134779A (en) 1980-03-25 1980-03-25 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3847180A JPS56134779A (en) 1980-03-25 1980-03-25 Semiconductor integrated circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62313800A Division JPS63296263A (ja) 1987-12-10 1987-12-10 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS56134779A JPS56134779A (en) 1981-10-21
JPH023547B2 true JPH023547B2 (enrdf_load_stackoverflow) 1990-01-24

Family

ID=12526151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3847180A Granted JPS56134779A (en) 1980-03-25 1980-03-25 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS56134779A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63296263A (ja) * 1987-12-10 1988-12-02 Semiconductor Res Found 半導体集積回路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108290A (en) * 1977-03-03 1978-09-20 Seiko Instr & Electronics Ltd Static induction transistor logic
JPS54145486A (en) * 1978-05-08 1979-11-13 Handotai Kenkyu Shinkokai Gaas semiconductor device

Also Published As

Publication number Publication date
JPS56134779A (en) 1981-10-21

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